5 Summary

This study has presented the results of an investigation in the domain of the physics and the analytical and numerical modeling of several physical effects in MOS devices. We have considered

• The redistribution and activation of dopants in gates. The physics of the gate-depletion effect and the modeling of MOS devices with a nondegenerate gate.
• The transient generation-recombination in MOSFETs. In particular, we have studied both, analytically and numerically the charge-pumping effect and the charge-pumping characteristics. The charge-pumping measurement techniques have been critically examined.
  The hot-carrier degradation in MOSFETs has been studied.
• The interband tunneling in thin-oxide MOSFETs has been modeled.

• Contributions