Own Publications



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Own Publications

P1
P.HABAS: Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs, In Proc: Conf. MIOPEL, Nis (YU), 1993 (invited).

P2
P.HABAS, O.HEINREICHSBERGER AND S.SELBERHERR: Analysis of the Degradation of n-Channel LDD MOSFET's by Numerical Simulation of the Charge-Pumping Current, In Proc: ICSICT, pp.691-693, Beijing (China), 1992.

P3
P.HABAS AND J.FARICELLI: Investigation of the Physical Modeling of the Gate-Depletion Effect, IEEE Trans. Electron Devices, vol.39, pp.1496-1500, 1992.

P4
P.GRUBMAIR, #TEX2HTML_WRAP31230#, O.HEINREICHSBERGER, H.KOSINA, C.SALA AND S.SELBERHERR: Recent Advances in Device Simulation at the TU-Vienna, In Proc: CAS, pp.347-358, Sinaia (Romania), 1992 (invited).

P5
P.HABAS, O.HEINREICHSBERGER AND S.SELBERHERR: Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment, In Proc: ESSDERC, pp.687-690, Leuven (Belgium), 1992.

P6
O.HEINREICHSBERGER, P.HABAS AND S.SELBERHERR: Analysis of Geometric-Charge-Pumping Components in a Thin-Film SOI Device, In Proc: ESSDERC, pp.819-822, Leuven (Belgium), 1992.

P7
P.HABAS AND S.SELBERHERR: A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment, In Proc: SSDM, pp.170-172, Tsukuba (Japan), 1992.

P8
P.HABAS, A.LUGBAUER AND S.SELBERHERR: Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field, In Proc: NUPAD Conf., pp.135-140, Seattle (WA), 1992.

P9
P.HABAS AND S.SELBERHERR: On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices - Analytical Modeling, Solid-State Electronics, vol.33, no.12, pp.1539-1544, 1990.

P10
P.HABAS AND S.SELBERHERR: Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices, Journal of MIDEM, no.4, pp.185-188, 1990.

P11
P.HABAS: A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility, Solid-State Electronics, vol.33, no.7, pp.923-933, 1990.

P12
P.HABAS AND S.SELBERHERR: Numerical simulation of MOS-devices with non-degenerate gate, In Proc: ESSDERC, pp.161-164, Nottingham (U.K.), 1990.

P13
P.HABAS: A Physics Based MOS Transistor's Model in the Triode Regime with Field-Dependent Mobility, In Proc: ETAN Conf., Novi Sad (YU), 1989 (Best paper award in the Electron Devices and Materials Section).

P14
P.HABAS: A SWS for industrial controller, In Proc: Power Electronics Conf. EE-88, Belgrade (YU), 1988.

P15
P.HABAS AND V.CVEKIC: A Simple Interpretation of the Effect of High Drain Field in Short-Channel MOSFET, In Proc: SD-88, Nova Gorica (YU), 1988.

P16
P.HABAS, D.STOJANOVIC, R.RAMOVIC, D.STOJANOVIC AND D.TJAPKIN: Numerical simulation of power VDMOS transistor, In Proc: ETAN Conf., Bled (YU), 1987.

P17
P.HABAS AND V.CVEKIC: A model for the high-voltage MOS transistor in the saturation regime, In Proc: MIEL-87 , Banjaluka (YU), 1987.

P18
P.HABAS: Analysis and Design of a High-Frequency Switching Power Supply with Power MOS Transistors, In report for SIZNR APV, Suppl.7, pp.1-60, IEE - Faculty of Technical Sciences, University of Novi Sad, 1986.

P19
P.HABAS: The Buck Converter with Power MOS Transistor and Output Capacitor Current Control, In Proc: Power Electronics Conf. EE-86, pp.44-52, Subotica (YU), 1986.



next up previous contents
Next: Curriculum Vitae Up: PhD Thesis Predrag Habas Previous: References



Martin Stiftinger
Sat Oct 15 22:05:10 MET 1994