7.1 Raw Measurement Results

Though only the very last relaxation curves of the MSM-sequence are depicted for various oxide electric fields Eox   in Fig. 7.3, with the corresponding VG,str   values obtained from Fig. 7.2, the following similarities of NBTI and PBTI can be summarized: (i) The V
  TH   -shift is always negative, apparently due to positive charge build-up during stress. (ii) Up to medium stresses the degradation also recovers in a similar fashion. (iii) Both NBTI and PBTI show nearly perfect logarithmic relaxation when stressed up to ± 6.5MV ∕cm  for 100ks  , yielding a constant recovery rate per decade.


PIC


Figure 7.3: Samples with an oxide thickness of 2.2nm  stressed using various NBTI/PBTI-conditions from 100s  up to 10ks  . Depending on the type of stress, there is either no deviation from a logarithmic recovery behavior, a deviation downwards (PBTI) or upwards (NBTI). While for weak NBTI/PBTI-conditions (Eox =  ±6MV  ∕cm  and tstr = 100s  ) a logarithmic fit of the relaxation is possible, this is not the case for the other heavier stress conditions.


However, there are two main differences between NBTI and PBTI stress and recovery: (i) The degradation during PBTI stress is about a factor two smaller than that built up during NBTI. (ii) Deviations are found when comparing the two cases of low field (Eox = ±6MV  ∕cm  ) versus high field (E   = ±8MV  ∕cm
  ox  ), which is emphasized in Fig. 7.3. For NBTI it appears that the strong relaxation in the initial phase ranging from 1μs  to about 100ms  slows down to finally saturate. The saturation level was already defined as permanent component (in contrast to the recoverable component) [3029]. After [110] this permanent component follows a power-law. In contrast, for high-field PBTI stress the recovery is first delayed and then pronounced. The relaxation curve here has an S-shape, which is observed for the first time, because it is obviously only visible for long relaxation times.