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11.4 Summary
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III. Applications
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12.1 Introduction
12
. Simulation of Surface Evolution
Subsections
12
.
1
Introduction
12
.
2
Overview of Topography Simulation
12
.
3
The Transport of Particles above the Wafer
12
.
4
A Radiosity Formulation for Luminescent Reflection
12
.
5
The Mechanism of Deposition of Silicon Dioxide from TEOS
12
.
5
.
1
The Heterogeneous Deposition Model
12
.
5
.
2
The Homogeneous Intermediate-Mediated Deposition Model
12
.
5
.
3
The Heterogeneous Deposition with Byproduct Inhibition Model
12
.
5
.
4
Deposition Rate
12
.
6
The Mechanism of Deposition of Silicon Nitride
12
.
7
Simulation of Silicon Dioxide from TEOS for Power MOSFETs
12
.
8
Simulation of Void Formation during Backend Processes
12
.
9
Simulation of Deposition after Transport in the Diffusion Regime
12
.
10
Summary
Previous:
11.4 Summary
Up:
III. Applications
Next:
12.1 Introduction
Clemens Heitzinger 2003-05-08
