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List of Publications

[A1]
A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, and S. Selberherr, ``A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation,'' In Simulation of Semiconductor Processes and Devices, pp. 55-58, Kyoto, Japan, 1999.

[A2]
T. Fahringer, P. Blaha, A. Höessinger, J.Luitz, E. Mehofer, H. Moritsch, and B. Scholz, ``Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures,'' to be published in Concurrency Practice and Experience, 1999.

[A3]
A. Höessinger, E. Langer, and S.Selberherr, ``Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator,'' In European Simulation Symposium, pp. 649 - 651, Erlangen, Germany, 1999.

[A4]
A. Hössinger, E. Langer, and S. Selberherr, ``Parallelization of a Monte-Carlo Ion Implantation Simulator.,'' IEEE Trans.Computer-Aided Design, vol. 19, no. 5, pp. 560 - 567, 2000.

[A5]
A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, and S. Selberherr, ``Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures,'' In Simulation of Semiconductor Processes and Devices, pp. 103-106, Kyoto, Japan, 1999.

[A6]
A. Hössinger and S. Selberherr, ``Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation,'' In Proc. 2nd Int. Conf. on Modeling and Simulation of Microsystems, pp. 363-366, San Juan, Puerto Rico, USA, April 1999.

[A7]
A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, and S. Kusanagi, ``Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions,'' In Electrochemical Society Proceedings, vol. 99-2, pp. 18-25, Seatle, Washington, USA, 1999.

previous up next contents Previous: Bibliography Up: Dissertation A. Hoessinger Next: Curriculum Vitae


A. Hoessiger: Simulation of Ion Implantation for ULSI Technology