5.2.2 Results



next up previous contents index
Next: 5.3 Implant Model Calibration Up: 5.2 Avalanche Model Calibration Previous: 5.2.1 Modeling Equations

5.2.2 Results

Fig. 5.6 shows measured and simulated substrate current data for a MOSFET with an effective channel length of as a function of gate voltage for three drain voltages around the supply voltage of 3.3 Volts. As shown the agreement is reasonably good given the empirical nature of the model. Similar agreement is also achieved for different device lengths as illustrated in Fig. 5.7 which compares measured and simulated peak as a function of gate lengths. Fig. 5.7 also shows the MINIMOS simulated without calibration to highlight the fit improvement.


Martin Stiftinger
Tue Aug 1 19:07:20 MET DST 1995