[9] D. Boning, G. Chin, W. Dietrich, S. Duvall, M. Giles, R. Harris,
M. Karasick, N. Khalil, M. Law, M. J. McLennan, P.K. Mozundar,
L. Nackman, S. Nassif, V.T. Rajan, D. Shroeder, R. Tremain,
D.M.H. Walker, R. Wang, and A. Wong,
``Developing and Integrating TCAD Applications with the Semiconductor
Wafer Representation", In Proc. NUPAD IV, 1992.
[10] M. Seavey, J. Faricelli, N. Khalil, G. Nanz, L. Richardson,
C. Schiebl, H. Soleimani, and M. Thurner,
``Numerical Device and Process Simulation Tools in Transistor Design",
Digital Technical Journal, vol 4(2), pages 25-38, Spring,1992.
[11] C.-L. Huang, N. Khalil, N.D. Arora, B. Zetterlund, and L.A. Bair,
``Effects of Source/Drain Implants on Short-Channel MOSFET I-V and
C-V Characteristics", IEEE Transactions on Electron Devices,
vol. 42-(7), July 1995.
[12] C. Pichler, N. Khalil, G. Schrom and S. Selberherr,
``TCAD Optimization based on Task-Level Framework Services",
Accepted for publication in SISDEP-95, 1995.
[13] C.-L. Huang, J. Faricelli, D. A. Antoniadis, N. Khalil,
and R. Rios,
``An Accurate Gate Length Extraction Method for Sub-Quarter Micron
MOSFET's",
Submitted to IEEE Transactions on Electron Devices,1995.