Literatur

1

G. Adam.
Wärmetheorie.
Vieweg, Braunschweig, 1992.

2

V.M. Agostinelli, T.J. Bordelon, X. Wang, K. Hasnat, C.-F. Yeap, D.B. Lemersal, A.F. Tasch, and C.M. Maziar.
Two-Dimensional Energy-Dependent Models for the Simulation of Substrate Current in Submicron MOSFET's.
IEEE Trans.Electron Devices, 41(10):1784-1795, 1994.

3

V.M. Agostinelli, T.J. Bordelon, X.L. Wang, C.F. Yeap, C.M. Maziar, and A.F. Tasch.
An Energy-Dependent Two-Dimensional Substrate Current Model for the Simulation of Submicrometer MOSFETs.
IEEE Electron Device Lett., 13(11):554-556, 1992.

4

J.-G. Ahn, C.-S. Yao, Y.-J. Park, H.-S. Min, and R.W. Dutton.
Impact Ionization Modeling Using Simulation of High Energy Tail Distributions.
IEEE Electron Device Lett., 15(9):348-350, 1994.

5

B. Antov and A. Asenov.
Substrate Current in Short N-Channel MOS Transistors.
Int.J.ELectron., 55(4):567-578, 1983.

6

G. Baccarani, editor.
Process and Device Modeling for Microelectronics.
Elsevier, Amsterdam, London, New York,Tokyo, 1993.

7

G. Baccarani, M. Rudan, R. Guerrieri, and P. Ciampolini.
Physical Models for Numerical Device Simulation.
In W.L. Engl, editor, Process and Device Modeling, volume 1 of Advances in CAD for VLSI, pages 107-158. North-Holland, 1986.

8

H. Brand.
Thermoelektrizität und Hydrodynamik.
Dissertation, Technische Universität Wien, 1994.

9

I.N. Bronstein and K.A. Semendjajew.
Taschenbuch der Mathematik.
Teubner, 1983.

10

M. Brox and W. Weber.
Dynamic Degradation in MOSFET's-Part I: The Physical Effects.
IEEE Trans.Electron Devices, 38(8):1852-1858, 1991.

11

R. Chatterjee.
Elements of Microwave Engineering.
Halsted Press, 1986.

12

S.L. Chuang and K. Hess.
Impact Ionization Across the Conduction-Band-Edge Discontinuity of Quantum-Well Heterostructures.
J.Appl.Phys., 59(8):2885-2894, 1986.

13

A.G. Chynoweth.
Ionization Rates for Electrons and Holes in Silicon.
Physical Review, 109:1537-1540, 1958.

14

D.C. D'Avanzo, M. Vanzi, and R.W. Dutton.
One-Dimensional Semiconductor Device Analysis (SEDAN).
Technical Report G-201-5, Stanford University, 1979.

15

D.R. Decker and C.N. Dunn.
Temperature Dependence of Carrier Ionization Rates and Saturated Velocities in Silicon.
J.Electr.Materials, 4(3):527-547, 1975.

16

S.R. Dhariwal, L.S. Kothari, and S.C. Jain.
On the Recombination of Electrons and Holes at Traps with Finite Relaxation Time.
Solid-State Electron., 24(8):749-752, 1981.

17

L. Esaki.
New Phenomenon in Narrow Germanium p-n Junctions.
Physical Review, 109:603-604, 1958.

18

C. Fischer.
Bauelementsimulation in einer computergestützten Entwurfsumgebung.
Dissertation, Technische Universität Wien, 1994.

19

C. Fischer, P. Habas, O. Heinreichsberger, H. Kosina, Ph. Lindorfer, P. Pichler, H. Pötzl, C. Sala, A. Schütz, S. Selberherr, M. Stiftinger, and M. Thurner.
MINIMOS 6 User's Guide.
Institut für Mikroelektronik, Technische Universität Wien, Austria, 1994.

20

M. V. Fischetti, S. E. Laux, and E. Crabbe.
Understanding Hot-Electron Transport in Silicon Devices: Is There a Shortcut?
J.Appl.Phys., 78(2):1058-1085, 1995.

21

J.G. Fossum.
Computer-Aided Numerical Analysis of Silicon Solar Cells.
Solid-State Electron., 19:269-277, 1976.

22

J.G. Fossum and D.S. Lee.
A Physical Model for the Dependence of Carrier Lifetime on Doping Density in Nondegenerate Silicon.
Solid-State Electron., 25(8):741-747, 1982.

23

T.H. Geballe and G.W. Hull.
Seebeck Effect in Silicon.
Physical Review, 98(4):940-947, May 1955.

24

M.A. Green.
Intrinsic Concentration, Effective Densities of States, and Effective Mass in Silicon.
J.Appl.Phys., 67(6):2944-2954, 1990.

25

P. Habas.
Analysis of Physical Effects in Small Silicon MOS Devices.
Dissertation, Technische Universität Wien, 1993.

26

P. Habas.
Modeling Approaches in Studying the Hot-Carrier Aging of MOSFETs.
Microel.and Rel., 34(11), 1994.

27

W. Heywang and H.W. Pötzl.
Bänderstruktur und Stromtransport, volume 3 of Halbleiter-Elektronik.
Springer, 1976.

28

J.M. Higman, I.C. Kizilyalli, and K. Hess.
Nonlocality of the Electron Ionization Coefficient in n-MOSFET's: An Analytic Approach.
IEEE Electron Device Lett., 9(8):399-401, 1988.

29

K.R. Hofmann, C.W. Werner, W. Weber, and G.Dorda.
Hot-Electron and Hole-Emission Effects in Short-Channel MOSFET's.
IEEE Trans.Electron Devices, ED-32(3):691-699, 1985.

30

W. M. Huang, K. Papworth, M. Racanelli, J. P. John, J. Foerstner, H. C. Shin, B. Y. Hwang H. Park, T. Wetteroth, S. Hong, H. Shin, S. Wilson, and S. Cheng.
TFSOI CMOS Technology for Sub-1V Microcontroller Circuits.
In Int.Electron Devices Meeting, pages 59-62, 1995.

31

G.A.M. Hurkx, D.B.M. Klaassen, and M.P.G. Knuvers.
A New Recombination Model for Device Simulation Including Tunneling.
IEEE Trans.Electron Devices, 39(2):331-338, 1992.

32

G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, and F.G. O'Hara.
A New Recombination Model Describing Heavy-Doping Effects and Low-Temperature Behaviour.
In Int.Electron Devices Meeting, pages 307-310, 1989.

33

ISE Integrated Systems Engineering AG, CH-8005 Zürich/Switzerland.
ISE TCAD Manuals, Volume 5, DESSIS Two-Dimensional Device Simulator, 1995.

34

C. Jungemann, B. Meinerzhagen, S. Decker, S. Keith, S. Yamaguchi, and H. Goto.
Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible?
Solid-State Electron., 42(4):647-655, 1998.

35

C. Jungemann, S. Yamaguchi, and H. Goto.
On the Accuracy and Efficiency of Substrate Current Calculations for Sub-$\mu$m n-MOSFET's.
IEEE Electron Device Lett., 17(10):464-466, 1996.

36

Chr. Jungemann, S. Yamaguchi, and H. Goto.
Is There Experimental Evidence for a Difference Between Surface and Bulk Impact Ionization in Silicon?
In Int.Electron Devices Meeting, pages 383-386, 1996.

37

Y. Kado, H. Inokawa, Y. Okazaki, T. Tsuchiya, Y. Kawai, M. Sato, Y. Sakakibara, S. Nakayama, H. Yamada, M. Kitamura, S. Nakashima, K. Nishimura, S. Date, M. Ino, K. Takeya, and T. Sakai.
Substantial Advantages of Fully-depleted CMOS/SIMOX Devices as Low-Power High-Performance VLSI Components Compared with its Bulk-CMOS Counterpart.
In Int.Electron Devices Meeting, pages 635-638, 1995.

38

K. Kells.
General Electrothermal Semiconductor Device Simulation.
Hartung-Gorre, Konstanz, 1994.

39

H. Kosina.
Simulation des Ladungstransportes in elektronischen Bauelementen mit Hilfe der Monte-Carlo-Methode.
Dissertation, Technische Universität Wien, 1992.

40

H. Kosina.
Current Transport in Silicon Devices.
Habilitationsschrift, Technische Universität Wien, 1997.

41

G.-Y. Lee.
Characterization of SOI-MOSFET with a New Measurement Technique; Channel Conductance Transient Spectroscopy (CCTS).
In Proc.Int.Conf.on VLSI and CAD, pages 260-263, Seoul, 1991.

42

O.K.B. Lui and P. Migliorato.
A New Generation-Recombination Model for Device Simulation Including the Poole-Frenkel Effect and Phonon-Assisted Tunnelling.
Solid-State Electron., 41(4):575-583, 1997.

43

M. Lundstrom.
Fundamentals of Carrier Transport, volume X of Modular Series on Solid State Device.
Addison-Wesley, 1990.

44

P.A. Markowich.
The Stationary Semiconductor Device Equations.
Springer, 1986.

45

K. Mehlhorn.
Datenstrukturen und effiziente Algorithmen, volume 1.
Teubner, 2. edition, 1988.

46

Y. Okuto and C.R. Crowell.
Ionization Coefficients in Semiconductors: A Nonlocalized Property.
Physical Review B, 10:4284-4296, 1974.

47

R. Paul.
Elektronische Halbleiterbauelemente.
Teubner, Stuttgart, 1989.

48

W. Quade, M. Rudan, and E. Schöll.
Hydrodynamic Simulation of Impact-Ionization Effects in P-N Junctions.
IEEE Trans.Computer-Aided Design, 10(10):1287-1294, 1991.

49

W. Quade, E. Schöll, and M. Rudan.
Impact Ionization within the Hydrodynamic Approach to Semiconductor Transport.
Solid-State Electron., 36(10):1493-1505, 1993.

50

R. Radojcic.
Hot-Electron Aging in p-Channel MOSFET's for VLSI CMOS.
IEEE Trans.Electron Devices, 31(12):1896-1898, 1984.

51

R. Radojcic.
Some Aspects of Hot-Electron Aging in MOSFET's.
IEEE Trans.Electron Devices, 31(10):1381-1386, 1984.

52

E.H. Rhoderick and R.H. Williams.
Metal-Semiconductor Contacts.
Oxford Press, 1988.

53

M. Rudan and A. Gnudi.
The Hydrodynamic Model of Current Transport in Semiconductors.
In European School on Device Modeling, 1991.

54

S. Saha, C.-S. Yeh, and B. Gadepally.
Impact Ionization Rate of Electrons for Accurate Simulation of Substrate Current in Submicron Devices.
Solid-State Electron., 36(10):1429-1432, 1993.

55

A. Schenk.
A Model for the Field and Temperature Dependence of Shockley-Read-Hall Lifetimes in Silicon.
Solid-State Electron., 35(11):1585-1596, 1992.

56

A. Schenk.
Rigorous Theory and Simplified Model of the Band-to-Band Tunneling in Silicon.
Technical Report 92/10, Integrated Systems Laboratory, ETH Zürich, 1992.

57

A. Schenk.
Advanced Physical Models for Silicon Device Simulation.
Computational Microelectronics. Springer, Wien, New York, 1998.

58

D.K. Schroder.
Carrier Lifetimes in Silicon.
IEEE Trans.Electron Devices, 44(1):160-170, 1997.

59

S. Selberherr.
Analysis and Simulation of Semiconductor Devices.
Springer, 1984.

60

N. Shigyo, T. Shimane, M. Suda, T. Enda, and S. Fukuda.
Verification of Saturation Velocity Lowering in MOSFET's Inversion Layer.
IEEE Trans.Electron Devices, 45(2):460-464, 1998.

61

T. Simlinger.
Simulation von Heterostruktur-Feldeffekttransistoren.
Dissertation, Technische Universität Wien, 1996.

62

J.W. Slotboom, G. Streutker, G.J.T. Davids, and P.B. Hartog.
Surface Impact Ionization in Silicon Devices.
In Int.Electron Devices Meeting, pages 494-497, 1987.

63

J.W. Slotboom, G. Streutker, M.J. v. Dort, P.H. Woerlee, A. Pruijmboom, and D.J. Gravesteijn.
Non-Local Impact Ionization in Silicon Devices.
In Int.Electron Devices Meeting, pages 127-130, 1991.

64

Ch.M. Snowden.
Large-Signal Microwave Characterization of AlGaAs/GaAs HBT's Based on a Physics-Based Electrothermal Model.
IEEE Trans.Microwave Theory and Techniques, 45(1):58-71, 1997.

65

M. Stiftinger.
Simulation und Modellierung von Hochvolt-DMOS-Transistoren.
Dissertation, Technische Universität Wien, 1994.

66

S. Tam, P.-K. Ko, C. Hu, and R.S. Muller.
Correlation Between Substrate and Gate Currents in MOSFET's.
IEEE Trans.Electron Devices, 29(11):1740-1744, 1982.

67

S. Tam, P.K. Ko, and C. Hu.
Lucky-Electron Model of Channel Hot-Electron Injection in MOSFET's.
IEEE Trans.Electron Devices, 31(9):1116-1125, 1984.

68

J.Y. Tang and Karl Hess.
Impact Ionization of Electrons in Silicon (Steady State).
J.Appl.Phys., 54(9):5139-5144, 1983.

69

Ting-Wei Tang and Joonwoo Nam.
A Simplified Impact Ionization Model Based on the Average Energy of Hot-Electron Subpopulation.
IEEE Electron Device Lett., 19(6):201-203, 1998.

70

Technology Modeling Associates, Inc., Sunnyvale, California.
TMA Medici, Two-Dimensional Device Simulation Program, Version 4.0 User's Manual, 1997.

71

O. Tornblad, U. Lindefelt, and B. Breitholtz.
Heat Generation In Si Bipolar Power Devices: The Relative Importance of Varios Contributions.
Solid-State Electron., 39(10):1463-1471, 1996.

72

C. Ueberhuber.
Computer-Numerik 2.
Springer, 1995.

73

M.J. van Dort, J.W. Slotboom, G. Streutker, and P.H. Woerlee.
Lifetime Calculations of MOSFET's Using Depth-Dependent Non-Local Impact Ionization.
In S. Selberherr, H. Stippel, and E. Strasser, editors, Simulation of Semiconductor Devices and Processes, volume 5, pages 469-472, Wien, 1993. Springer.

74

Q. Wang, M. Brox, W.H. Krautschneider, and W. Weber.
Explanation and Model for the Logarithmic Time Dependence of p-MOSFET Degradation.
IEEE Electron Device Lett., 12(5):218-220, 1991.

75

C. Wasshuber.
About Single-Electron Devices and Circuits.
Dissertation, Technische Universität Wien, 1997.

76

P.B.M. Wolbert, G.K.M. Wachutka, B.H. Krabbenborg, and T.J. Mouthaan.
Nonisothermal Device Simulation Using the 2-D Numerical Process/Device Simulator TRENDY and Application to SOI-Devices.
IEEE Trans.Computer-Aided Design, 13(3):293-302, 1994.

77

K. Yamaguchi.
Mathematical Modeling of Semiconductor-On-Insulator (SOI) Device Operation.
IEEE Trans.Electron Devices, 31(7):977-982, 1984.