Eigene Publikationen

P1

R. Deutschmann, C. Fischer, T. Simlinger, C. Köpf, and S. Selberherr. Two-Dimensional Hydrodynamic Simulation of Heterostructure Devices. In Proc. 8th GaAs Simulation Workshop, Duisburg, 1994.

P2

Ch. Köpf, H. Kosina, and S. Selberherr. Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation. In J.-C. Woo and Y.S. Park, editors, Compound Semiconductors 1995, Number 145 in Institute of Physics Conference Series, pages 1255-1260, 1996. Proc. 22nd Int. Symp. Compound Semiconductors, Cheju Island, Korea.

P3

Ch. Köpf, H. Kosina, and S. Selberherr. Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System. In M.S. Shur and R.A. Suris, editors, Compound Semiconductors 1996, Number 155 in Institute of Physics Conference Series, pages 675-678, 1997. Proc. 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia.

P4

Ch. Köpf, H. Kosina, and S. Selberherr. Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys. In Proc. 21. Condensed Matter Physics Meeting, page TP21, Pakatoa Island, New Zealand, 1997. Australian and New Zealand Institutes of Physics.

P5

Ch. Köpf, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr. Influence of Dopant Species on Electron Mobility in InP. In Proc. 1997 Int. Conf. on Indium Phosphide and Related Materials, pages 280-283, Hyannis, Massachusetts, USA, 1997. IEEE.

P6

G. Kaiblinger-Grujin, H. Kosina, Ch. Köpf, and S. Selberherr. Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors. Proc. Int. Conf. Defects in Semiconductors, Aveiro, Portugal, 1997. in press.

P7

Ch. Köpf, H. Kosina, and S. Selberherr. Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport. Solid-St. Electron., volume 41(8), pages 1139-1152, 1997.

P8

Ch. Köpf, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr. Reexamination of Electron Mobility Dependence on Dopants in GaAs. In H. Grünbacher, editor, ESSDERC'97 - Proc. 27th European Solid-State Device Research Conference, pages 304-307, Stuttgart, Germany, 1997. Editions Frontieres.

P9

G. Kaiblinger-Grujin, Ch. Köpf, H. Kosina, and S. Selberherr. Dependence of Electron Mobility on Impurities in Compound Semiconductors. In Proc. 10th III-V Semiconductor Device Simulation Workshop, Torino, Italy, 1997.