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3.3 Band-Structure

In this section the models for the effective masses of electrons and holes, bandgap energy and effective density of states in Si, Ge, SiGe, and III-V materials are presented.

Subsections

3.3.1 Bandgap Energy
- 3.3.1.1 Temperature dependence of the bandgap
- 3.3.1.2 Semiconductor Alloys
3.3.2 Bandgap Offsets
3.3.3 Bandgap Narrowing
3.3.4 Effective Carrier Mass
3.3.5 Effective Density of States

Vassil Palankovski
2001-02-28