4.3 SJ Lateral Trench Gate SOI-LDMOSFETs

Recently the super-junction concept was suggested to improve the trade-off between $ R_\mathrm{sp}$ and BV of vertical DMOSFETs. In this section we suggest and study SOI-LDMOSFETs which have a SJ structure together with a lateral trench gate. Furthermore, we propose the unbalanced structure which has a larger $ n$-column width than that of the $ p$-column.



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Jong-Mun Park 2004-10-28