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3.2.2 Permittivity

The parameters for the permittivity model at $ {\it T}_\mathrm{L}$= 300 K of MINIMOS-NT are summarized in Table 3.3. As for most of the parameters, there is a range of values indicated in the data compilations to allow the evaluation of the stability of the default value. For ternary alloys the permittivity is modeled as a function of the material composition:
    $\displaystyle \varepsilon_{r}^{AB} = x \cdot \varepsilon_r^{A} + (1-x) \cdot \varepsilon_r^{B}+(1-x)\cdot x \cdot C_{\varepsilon}$ (3.20)

For ternary semiconductors typical values are also found in Table 3.4. For the quaternary material In$ _x$Al$ _{y}$Ga$ _{1-y}$As is composed from the ternary constituents from values obtained for the ternary materials in Table 3.3.

Table 3.3: Relative static permittivity parameter values for binary semiconductors and insulators.
Material $ \varepsilon_{r}$ Reported Range References
GaAs 13.1 12.5-13.18 [4,42,194]
AlAs 10.1 10.0-10.06 [4,265]
InAs 14.60 14.55-15.5 [3,52,91]
InP 12.4 12.3-12.61 [3,85]
In$ _{0.52}$Al$ _{0.48}$As 12.46 - [118,163]
Al$ _{0.51}$Ga$ _{0.49}$As 11.63 - [118]
GaN 9.7 10.4 $ \parallel$ c-axis, 9.5 $ \perp$ c-axis, 8.9 [89,294]
AlN 8.5 - [89]
InN 13.52 13.52-15.3 [89,203]
Si 11.9 11.8 [194,284]
SiN$ _x$ 7.0 6.2-7.5 [194,284]
SiO$ _2$ 3.9 - [194]
Al$ _{2}$O$ _3$ (sapphire) 9.8 9.3-9.8 [173]
BCB 2.6 2.65 [61]
BeO (Berryllia) 6.5 - [173]
SiC 6H 9.66 $ \parallel$ c, 10.3 $ \perp$ c - [114]
Diamond 5.7 - [73]



Table 3.4: Relative static permittivity parameters for ternary alloys.
Material C $ _{\varepsilon}$ $ \varepsilon_{r}^{AB}$ Reported Range References
Al$ _{x}$Ga$ _{1-x}$As 0 - - [4]
In$ _{x}$Ga$ _{1-x}$As -1 13.1 ( $ x$=0.53) 13.94 [3,163]
In$ _{x}$Al$ _{1-x}$As -1 12.46 ($ x$=0.52) - [163]
Al$ _{x}$Ga$ _{1-x}$N 0 - - [89]
In$ _{x}$Ga$ _{1-x}$N 0 - - [89]
In$ _{0.52}$Al$ _{x}$Ga$ _{1-x}$As 0 - - [119]



next up previous
Next: 3.2.3 Band Structure Parameters Up: 3.2 Material Models Previous: 3.2.1 Mass Density
Quay
2001-12-21