List of Figures

Acronyms

BFOM Baliga figure of merit.

BTI bias temperature instability.

C carbon.

CDF cumulative distribution function.

CP charge pumping.

CV capacitance-voltage.

CVD chemical vapor deposition.

DFT density functional theory.

EDMR electrically detected magnetic resonance.

erfc complimentary error function.

H hydrogen.

ID -VG transfer characteristic.

MOSCAP metal oxide semiconductor capacitor.

MOSFET metal oxide semiconductor field effect transistor.

N₂ dinitrogen.

N₂O nitrous oxide.

NBTI negative bias temperature instability.

NH₃ ammonia.

NMP non-radiative multiphonon.

NO nitric oxide.

O oxygen.

P_bC carbon dangling bond.

PBS positive bias stress.

PBTS positive bias temperature stress.

PDF probability density function.

PES adiabatic potential energy surface.

POA post oxidation anneal.

Si silicon.

SiC silicon carbide.

SiH₄ silane.

SIMS secondary ion mass spectrometry.

SiO₂ silicon dioxide.

SMU source-measurement unit.

SRH Shockley-Read-Hall.

TEOS Tetraethylorthosilicat.

V_O oxygen vacancy.

V_Si silicon vacancy.

WBG wide band gap.

Symbols

vacuum permittivity (8.854 187 817 × 10⁻¹⁴).

time constant for electron capture in SRH theory.

time constant for electron emission in SRH theory.

time constant for hole emission in SRH theory.

transition time constant for each H hopping event.

parameter of the log-normal distribution.

capture cross section of electrons.

standard deviation of the normal distribution.

capture cross section of holes.

relative permittivity of SiC (≈ 10).

relative permittivity of SiO₂ (3.9).

thermal drift velocity of electrons.

thermal drift velocity of holes.

effective area.

effective gate area.

oxide capacitance.

density of interface traps.

activation energy.

breakdown field.

energy at the bottom of the conduction band.

active charge pumping energy window.

upper emission boundary of the active energy window.

lower emission boundary of the active energy window.

Fermi energy.

band gap energy.

intrinsic Fermi energy.

oxide field.

trap energy.

energy at the top of the valence band.

frequency.

transconductance.

charge pumping current.

maximum charge pumping current.

drain current.

gate-drain current in gated diode mode.

readout current.

Bolzmann constant (8.617 332 478 × 10⁻⁵).

mobility.

effective density of states in the conduction band.

intrinsic carrier density.

carrier density in the inversion channel.

number of oxide traps.

effective density of states in the valence band.

number of pumped charges.

number of interface states.

number of trapped charges.

elementary charge (1.602 176 565 35 × 10⁻¹⁹).

total trapped interface charge.

reference readout for voltage shift calculation.

channel resistance.

readout for voltage shift calculation.

on-resistance.

capture cross section.

temperature.

fall time of the gate pulse.

time the sample is subjected to a high thermal budget.

oxide thickness.

accumulation preconditioning time.

rise time of the gate pulse.

time extraction point for voltage shift calculation.

recovery time.

stress time.

transition time constant.

voltage shift.

voltage shift.

initial voltage shift between varying measurements.

capacitance voltage shift.

drain voltage.

flat band voltage shift.

charge pumping flat band voltage.

maximum flat band voltage shift.

gate voltage.

high level of the gate pulse.

low level of the gate pulse.

operation gate voltage.

recovery or readout voltage.

stress voltage.

voltage level at the end a voltage sweep.

threshold voltage.

charge pumping threshold voltage.

threshold voltage extracted by the method of Ghibaudo.

threshold voltage in gated diode mode.

subthreshold voltage: gate voltage at which the drain current reaches 1 nA at a drain voltage of 100 mV.