Next: 6.2 The Compact Model
Up: 6. Extraction of Compact
Previous: 6. Extraction of Compact
The device for which the parameters are extracted is a
SiGe npn
bipolar junction transistor (BJT) with a base width of
20 nm.
The
Ge fraction in the base region is
0.2.
Fig. 6.1 shows the geometry of the simulated device.
Figure 6.1:
Geometry of the simulated BJT.
![\begin{figure}
\begin{center}
\includegraphics[width=10cm]{eps/hbtgeometry.eps}\end{center}\end{figure}](img435.gif) |
Martin Rottinger
1999-05-31