9.3.2 Modeling the Doping Profile

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9.3.2 Modeling the Doping Profile

Although we could produce the electrical device by means of a full process simulation, we are for simplicity using MAKEDEVICE [5] to create a synthetic NMOS device. Figure 9.4 shows a schematic view of a semiconductor device produced with MAKEDEVICE. It contains several elements which build up the doping profile. They are either profiles of Gaussian, Pearson, or constant shape. There are doping elements for the source and drain regions, for the lightly doped drain, for the threshold implant, and for the punch trough implant.
$\begin{Figure} % latex2html id marker 9174\centering \includegraphics[width=0.... ... which is generated by the \textbf{simu\-la\-ti\-on-flow-model}{}.} \end{Figure}$

MAKEDEVICE allows the user to control these doping elements by means of parameters of its input deck. Example 9.1 shows a simulation-flow-model which encapsulates MAKEDEVICE. Example 9.2 lists the input deck which is used to describe the doping profiles of the NMOS device. This input deck contains template symbols which refer to ports of the simulation-flow-model. Thus, one is able to specify the parameters of the doping profile at the model's ports. A sample device produced by this model is depicted in Figure 9.5.

$\begin{Example} % latex2html id marker 9187\centering\small \begin{minipage}{\... ...rates a synthetic NMOS device at its output port \textit{device}.} \end{Example}$

$\begin{Example} % latex2html id marker 9231\centering\scriptsize \begin{minipa... ...are customized in the input deck of \mbox{\textsf{MAKEDEVICE}}{}.} \end{Example}$

$\begin{Figure} % latex2html id marker 9240\centering \includegraphics[width=0.... ...device} \textbf{model}{} of Example \ref{exa::invmod-mkdev-model}.} \end{Figure}$

Next: 9.3.3 Deriving a Metric Up: 9.3 Inverse Modeling of Previous: 9.3.1 The Inverse Modeling

Rudi Strasser
1999-05-27