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2

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3

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BHATTACHARYA, P., Ed. Properties of Lattice-Matched and Strained Indium Gallium Arsenide. No. 8 in EMIS Datareviews Series. IEE INSPEC, 1993.

5

BOHMAYR, W., FASCHING, F., FISCHER, C., GABARA, A., HALAMA, S., HEINREICHSBERGER, O., KOSINA, H., PICHLER, C., PIMINGSTORFER, H., READ, H., RIEGER, G., SALA, C., SCHROM, G., SELBERHERR, S., , SIMLINGER, T., STIPPEL, H., STRASSER, E., TUPPA, W., AND WIMMER, K. VISTA Reference Manual, Volume L2/R, PIF Application Interface, Attribute Support. Institute for Microelectronics, Technical University Vienna, Dec. 1995.

6

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8

CHOI, W.-S., AHN, J.-G., PARK, Y.-J., MIN, H.-S., AND HWANG, C.-G. A Time Dependent Hydrodynamic Device Simulator SNU-2D With New Discretization Scheme and Algorithm. IEEE Trans.Computer-Aided Design 13, 7 (1994), 899-908.

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DEUTSCHMANN, R. Entwicklung eines physikalischen HFET-Modells: Parameterextraktion und Verifikation. Dissertation, Technische Universität Wien, 1995.

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FASCHING, F., TUPPA, W., AND SELBERHERR, S. VISTA-The Data Level. IEEE Trans.Computer-Aided Design 13, 1 (1994), 72-81.

11

FISCHER, C. Bauelementsimulation in einer computergestützten Entwurfsumgebung. Dissertation, Technische Universität Wien, 1994.

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FISCHER, C., HABA\VS, P., HEINREICHSBERGER, O., KOSINA, H., LINDORFER, PH., PICHLER, P., PöTZL, H., SALA, C., SCHüTZ, A., SELBERHERR, S., STIFTINGER, M., AND THURNER, M. MINIMOS 6.0 User's Guide. Institute for Microelectronics, Technical University Vienna, Mar. 1994.

13

FISCHER, C., AND SELBERHERR, S. Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners. In Proc: Int. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD V (Honolulu, 1994), pp. 123-126.

14

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Eigene Publikationen:

1

SIMLINGER, T., FISCHER, C., DEUTSCHMANN, R., AND SELBERHERR, S. MINIMOS NT - A Hydrodynamic Simulator for High Electron Mobility Transistors. In Proc: 8th GaAs Simulation Workshop (Duisburg, 1994).

2

SIMLINGER, T., DEUTSCHMANN, R., FISCHER, C., KOSINA, H., AND Selberherr, S. Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method. In Proc: Fourth Int. Conf. on Solid-State and Integrated-Circuit Technology (Beijing, China, 1995), G. Baldwin, Z. Li, C. Tsai, and J. Zhang, Eds., pp. 589-591.

3

SIMLINGER, T., KOSINA, H., ROTTINGER, M., AND SELBERHERR, S. MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices. In Proc: 25th European Solid State Device Research Conference (Gif-sur-Yvette Cedex, France, 1995), H. de Graaff and H. van Kranenburg, Eds., Editions Frontieres, pp. 83-86.

4

SIMLINGER, T., BRECH, H., GRAVE, T., AND SELBERHERR, S. Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT. to appear in IEEE Trans.Electron Devices, 1996.

5

DEUTSCHMANN, R., FISCHER, C., SIMLINGER, T., KöPF, C., AND SELBERHERR, S. Two-Dimensional Hydrodynamic Simulation of Heterostructure Devices. In Proc: 8th GaAs Simulation Workshop (Duisburg, 1994).

6

HALAMA, S., FASCHING, F., FISCHER, C., KOSINA, H., LEITNER, E., PICHLER, CH., PIMINGSTORFER, H., PUCHNER, H., RIEGER, G., SCHROM, G., SIMLINGER, T., STIFTINGER, M., STIPPEL, H., STRASSER, E., TUPPA, W., WIMMER, K., AND SELBERHERR, S. The Viennese Integrated System for Technology CAD Applications. In Proc: Technology CAD Systems (1993), F. Fasching, S. Halama, and S. Selberherr, Eds., Springer, pp. 197-236.

7

HALAMA, S., FASCHING, F., FISCHER, C., KOSINA, H., LEITNER, E., LINDORFER, P., PICHLER, CH., PIMINGSTORFER, H., PUCHNER, H., RIEGER, G., SCHROM, G., SIMLINGER, T., STIFTINGER, M., STIPPEL, H., STRASSER, E., TUPPA, W., WIMMER, K., AND SELBERHERR, S. The Viennese Integrated System for Technology CAD Applications. Microelectronics Journal 26, 2/3 (1995), 137-158.

8

HALAMA, S., PICHLER, CH., RIEGER, G., SCHROM, G., SIMLINGER, T., AND SELBERHERR, S. VISTA--User Interface, Task Level, and Tool Integration. IEEE Trans.Computer-Aided Design 14, 10 (1995), 1208-1222.

9

KOSINA, H., AND SIMLINGER, TH. Modeling Concepts for Modern Semiconductor Devices. In Proc: Int.Semiconductor Conference (Sinaia, Romania, 1995), pp. 27-36.

10

ROTTINGER, M., SIMLINGER, T., AND SELBERHERR, S. Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT. In Proc: Simulation of Semiconductor Devices and Processes (1995), H. Ryssel and P. Pichler, Eds., vol. 6, Springer, pp. 440-443.

11

SCHROM, G., PICHLER, CH., SIMLINGER, T., AND SELBERHERR, S. On the Lower Bounds of CMOS Supply Voltage. Solid-State Electron. 39, 4 (1996), 425-430.

12

SELBERHERR, S., FISCHER, C., HALAMA, S., PICHLER, C., RIEGER, G., SCHROM, G., AND SIMLINGER, T. The IC Processes of the Future. In Proc: IV Brazilian Microelectronics School (Recife, Jan. 1995), E. Santos and G. Machado, Eds., vol. I, pp. 87-114.