Contents

• List of Figures
• List of Tables
• 1. Introduction
• 2. The Semiclassical Transport Model
  • 2.1 Equations of Motion
    • 2.1.1 Real Space Equation of Motion
    • 2.1.2 Time Evolution of the Quasi-Momentum
    • 2.1.3 General Properties of Semiclassical Dynamics
  • 2.2 Distribution Function
    • 2.2.1 Equilibrium Distribution
    • 2.2.2 Non-Equilibrium Distribution
  • 2.3 Boltzmann's Transport Equation
    • 2.3.1 Liouville's Theorem
    • 2.3.2 Collision Integral
    • 2.3.3 Principle of Detailed Balance
  • 2.4 Band Structure
    • 2.4.1 Electron in a Periodic Potential
    • 2.4.2 Analytical Band Structure
  • 2.5 Scattering Mechanisms
    • 2.5.1 Perturbation Theory
    • 2.5.2 Scattering on Phonons
    • 2.5.3 Plasmon Scattering
    • 2.5.4 Alloy Scattering
    • 2.5.5 Ionized Impurity Scattering
  
  
• 3. Strain Effects in Grown on a Substrate
  • 3.1 SiGe Strained Layers
    • 3.1.1 Critical Thickness and Dislocations
    • 3.1.2 Applications of Strain
    • 3.1.3 Strained Layers in Semiconductor Devices
  • 3.2 Linear Deformation-Potential Theory
    • 3.2.1 General Description of the Conduction Band Splitting in Strained SiGe
    • 3.2.2 Strain Tensor
    • 3.2.3 Stress Tensor
    • 3.2.4 Energy Shift
  • 3.3 Substrate Orientation and Strain Tensor
    • 3.3.1 Strain Tensor in the Interface Coordinate System
    • 3.3.2 Coordinate System Transformation
    • 3.3.3 Strain Tensor Elements in the Principle Coordinate System
  • 3.4 Band Structure of Strained SiGe layers
    • 3.4.1 Hydrostatic Strain
    • 3.4.2 Uniaxial Strain
    • 3.4.3 Effective Masses in Strained SiGe
  • 3.5 Scattering Mechanisms in Strained SiGe
    • 3.5.1 Electron-Phonon Scattering
    • 3.5.2 Ionized Impurity Scattering
    • 3.5.3 Plasmon Scattering
  
  
• 4. Monte Carlo Methods for the Solution of the Boltzmann Equation
  • 4.1 Perturbation Approach to the Boltzmann Equation Including the Pauli Principle
    • 4.1.1 The Zeroth Order Equation
    • 4.1.2 The First Order Equation
  • 4.2 Integral Form of the First Order Equation
    • 4.2.1 New Differential and Total Scattering Rates
    • 4.2.2 Integral Form for the Distribution Function Perturbation
    • 4.2.3 Free Term and Initial Distribution
    • 4.2.4 The Resolvent Series
    • 4.2.5 The Second Iteration of the Forward Resolvent Series
  • 4.3 Zero Field Monte Carlo Algorithm Including the Pauli Principle
    • 4.3.1 Low Field Carrier Mobility and Monte Carlo Techniques
    • 4.3.2 Specific of the Equilibrium Distribution
    • 4.3.3 Total Scattering Rate
    • 4.3.4 Expression for the Initial Distribution
    • 4.3.5 Monte Carlo Algorithm for the Mobility Tensor
  • 4.4 The High Field Small Signal Monte Carlo Algorithm
    • 4.4.1 Solution of the Zeroth Order Equation
    • 4.4.2 Solution of the First Order Equation
    • 4.4.3 Monte Carlo Algorithm for the Impulse Response
  
  
• 5. Modeling of Strained on Substrates
  • 5.1 Low Field Electron Mobility in Undoped Layers
    • 5.1.1 Si layers on substrates
    • 5.1.2 layers on substrates
  • 5.2 Low Field Electron Mobility in Doped Layers
  • 5.3 Small Signal Response
  
  
• 6. Summary
• A. Second Quantization
  • A.1 Many-Body Operators
  • A.2 Creation and Annihilation Operators
  
  
• B. Random Phase Approximation and Plasmons
• Bibliography
• Own Publications

S. Smirnov: