Compared to the drive current optimizations of Chapter 4, now the number of optimization parameters has doubled, from 62 to 124 in the case of the two-dimensional approach, because the doping profiles of the NMOS and PMOS transistors are optimized at the same time. Transient two-dimensional device simulations using MINIMOS-NT are performed with a couple of time-steps instead of single DC-operating point calculations as in the case of drive current optimizations. This means a much higher computational effort and, therefore, much longer optimization times.