« Previous Up Next »Contents
Previous: A List of Symbols Top: A List of Symbols Next: A.3 Acronyms

A.2 Physical Quantities

$T$ temperature
$T_\mathrm {chuck}$ thermo chuck temperature
$T_\mathrm {dev}$ device temperature
$T_\mathrm {min}$ temperature minimum
$T_\mathrm {PH}$ poly-heater temperature
$P_\mathrm {PH}$ power dissipated in the poly-heater
$I_\mathrm {PH}$ current flow through the poly-heater
$V_\mathrm {PH}$ voltage applied to poly-heater
$R_\mathrm {PH}$ poly-heater resistance
$R^\mathrm {th}$ thermal resistivity
$V_{\mathrm {th}}$ threshold voltage
$V_{\mathrm {th,0}}$ threshold voltage before stress
$A$ channel area
$A_\mathrm {G,eff}$ effective channel area
$I_\mathrm {D}$ drain current
$R_\mathrm {on}$ on-resistance
$I_\mathrm {B}$ bulk current
$I_\mathrm {G}$ gate current
$V_\mathrm {G}$ gate voltage
$V_\mathrm {D}$ drain voltage
$V_\mathrm {B}$ bulk voltage
$V_\mathrm {D}^\mathrm {meas}$ drain measurement voltage
$I_\mathrm {D,lin}$ linear drain current
$\Delta I_\mathrm {D,lin}$ linear drain current shift
$I_\mathrm {D,sat}$ saturation drain current
$\Delta I_\mathrm {D,sat}$ saturation drain current shift
$I_\mathrm {CP}$ charge pumping current
$V_\mathrm {GL}$ low level of the gate voltage
$V_\mathrm {GH}$ high level of the gate voltage
$\Delta V_\mathrm {G}$ pulse amplitude
$\Delta V_\mathrm {G}^\mathrm {str}/2$ modulation amplitude
$t_\mathrm {r}$ rise time
$t_\mathrm {f}$ fall time
$t_\mathrm {str}$ stress time
$t_\mathrm {str,min}$ lower limit of the experimental window during stress
$t_\mathrm {str,max}$ upper limit of the experimental window during stress
$t_\mathrm {rec}$ recovery time
$t_\mathrm {rec,min}$ lower limit of the experimental window during recovery
$t_\mathrm {rec,max}$ upper limit of the experimental window during revery
$V_\mathrm {FB}$ flatband voltage
$D_\mathrm {it}(E)$ interface-state density at energy level E
$N_\mathrm {it}$ interface-charge density
$N_\mathrm {ot}$ bulk-oxide-charge density
$g_\mathrm {m}$ transconductance
$g_\mathrm {m,max}$ maximum transconductance
$\Delta g_\mathrm {m,max}$ maximum transconductance shift
$\Delta V_{\mathrm {th}}$ threshold voltage shift
$\Delta V_{\mathrm {th}}^\mathrm {AS}$ threshold voltage shift directly after stress
$V_{\mathrm {G}}^\mathrm {str}$ gate voltage at stress conditions
$V_{\mathrm {G}}^\mathrm {rec}$ gate voltage at recovery conditions
$V_\mathrm {G}^\mathrm {cv}$ gate voltage at recovery conditions using the cv method
$I_\mathrm {D}^\mathrm {cc}$ drain current at recovery conditions using the cc method
$V_{\mathrm {DD}}$ supply voltage
$V_{\mathrm {D}}^\mathrm {str}$ drain voltage at stress conditions
$I_{\mathrm {D}}^\mathrm {str}$ drain current during stress
$V_{\mathrm {D}}^\mathrm {rec}$ drain voltage at recovery conditions
$\tau _{\mathrm {e}}$ emission time
$\tau _{\mathrm {c}}$ capture time
$t$ time
$d$ step height
$R$ threshold voltage shift during recovery
$I_\mathrm {D}$ - $V_\mathrm {G}$ transfer characteristics
$L$ gate length
$W$ gate width
$N_\mathrm {e}$ number of emission events
$N_\mathrm {t}$ number of recovery traces
$E_\mathrm {C}$ conduction band
$E_\mathrm {F}$ Fermi level
$E_\mathrm {i}$ intrinsic energy
$E_\mathrm {OX}$ oxide electric field
$t_\mathrm {OX}$ oxide thickness
$C_\mathrm {OX}$ oxide capacitance
$S$ sub-threshold slope
$SS$ sub-threshold swing
$\Delta SS$ sub-threshold swing shift
$\delta$ relative difference between $\Delta V_\mathrm {th}$ extracted from the cv method and extrated from the cc method
$\kappa$ relative permittivity
$\mu _\mathrm {eff}$ channel mobility
$X_{i}$ defect occupancy of the state $i$
$V_\mathrm {ch}$ channel potential
$X_\mathrm {T}$ lateral defect position

« Previous Up Next »Contents
Previous: A List of Symbols Top: A List of Symbols Next: A.3 Acronyms