2.2.4 Stress from Shallow Trench Isolation

In sub-micron technologies with small active area, the mechanical stress induced from shallow trench isolation (STI) cannot be neglected [Wang03]. STI can induce lateral (parallel to the channel) and transversal mechanical stress (in the width direction of transistor). A reduction of the transistor width amplifies the compressive stress in the channel induced by STI, which was shown to yield an increase of the hole mobility [Chan03].

Figure 2.3: Combination of epitaxial source/drain regions and stress liner to induce compressive uniaxial stress for the p-channel MOSFET and tensile uniaxial stress for the n-channel MOSFET.

E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology