4.2.2 Substrate Orientation (110)

On (110) substrate the energy difference between the two subband ladders formed in the unstrained case (compare Table 4.1) can be increased by applying tensile stress along [001]. Compressive stress along [$\bar{1}$10] or biaxial in-plane tensile stress will also increase the intrinsic splitting between the fourfold, unprimed and the twofold, primed subband ladder.

E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology