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Bibliography

1
ABAQUS, Inc., Providence, RI.
ABAQUS, January 2005.
http://www.hks.com/.

2
Advanced Computing Technology Center, IBM.
Engineering and Scientific Subroutine Library (ESSL), January 2005.
http://www.research.ibm.com/actc/Optimized_Math_Libraries.html.

3
Advanced Micro Devices.
AMD Core Math Library, January 2005.
http://www.amd.com/us-en/Processors/DevelopWithAMD/0,,30_2252_2282,00.html.

4
Agilent Technologies, Inc., Palo Alto, CA.
Advanced Design System ADS, 2003.

5
Agilent Technologies, Inc., Palo Alto, CA.
Guide to Harmonic Balance Simulation in ADS, 2003.

6
Agilent Technologies, Inc., Palo Alto, CA.
E8882A Harmonic Balance Simulator, 2004.
http://eesof.tm.agilent.com/products/e8882a-a.html.

7
ANSYS, Inc., Canonsburg, PA.
ANSYS, January 2005.
http://www.ansys.com/.

8
Applied Wave Research, Inc., El Segundo, CA.
Microwave Office 2004, 2004.
http://www.mwoffice.com/products/mwoffice/.

9
N. Arora.
MOSFET Models for VLSI Circuit Simulation.
Springer, 1993.

10
U. Ascher, P.A. Markowich, C. Schmeiser, H. Steinrück, and R. Weiss.
Conditioning of the Steady State Semiconductor Device Problem.
Technical Report 86-18, University of British Columbia, 1986.

11
T. Ayalew.
SiC Semiconductor Devices Technology, Modeling, and Simulation.
Dissertation, TU Vienna, 2004.
http://www.iue.tuwien.ac.at/phd/ayalew/.

12
T. Ayalew, S. Wagner, T. Grasser, and S. Selberherr.
Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates.
In Proc. 5th European Conference on Silicon Carbide and Related Materials, pages 76-77, Bologna, Italy, September 2004.

13
E. Anderson Z. Bai, C. Bischof, S. Blackford, J. Demmel, J. Dongarra, J. Du Croz, A. Greenbaum, S. Hammarling, A. McKenney, and D. Sorensen.
LAPACK Users' Guide.
SIAM, third edition, 1999.

14
Z. Bai, D. Day, J. Demmel, and J. Dongarra.
A Test Matrix Collection for Non-Hermitian Eigenvalue Problems (Release 1.0), October 1996.

15
R.E. Bank and D.J. Rose.
Global Approximate Newton Methods.
Numer.Math., 37:279-295, 1981.

16
R.E. Bank, D.J. Rose, and W. Fichtner.
Numerical Methods for Semiconductor Device Simulation.
IEEE Trans.Electron Devices, ED-30(9):1031-1041, 1983.

17
R. Barrett, M. Berry T.F. Chan, J. Demmel, J. Donato, J. Dongarra, V. Eijkhout, R. Pozo, C. Romine, and H. Van der Vorst.
Templates for the Solution of Linear Systems: Building Blocks of Iterative Methods.
SIAM, Philadelphia, PA, 1994.

18
Basic Linear Algebra Subprograms.
Basic Linear Algebra Subprograms (BLAS), January 2005.
http://www.netlib.org/blas/.

19
M. Benzi, C.D. Meyer, and M. TUMA.
A Sparse Approximate Inverse Preconditioner.
SIAM J.Sci.Comput., 17(5):1135-1149, 1996.

20
BIPSIM, Inc., London, Ontario.
BIPOLE3, September 2004.
http://www.bipsim.com/mainframe.html.

21
L.S. Blackford, J. Choi, A. Cleary, E. D'Azevedo, J. Demmel, I. Dhillon, J. Dongarra, S. Hammerling, G. Henry, A. Petitet, K. Stanley, D. Walker, and R.C. Whaley.
ScaLAPACK Users' Guide.
Siam, Philadelphia, 1997.

22
K. Bløtekjær.
Transport Equations for Electrons in Two-Valley Semiconductors.
IEEE Trans.Electron Devices, ED-17(1):38-47, 1970.

23
Boeing Math Group.
BCSLIB-EXT Iterative Solver, January 2005.
http://www.boeing.com/phantom/iiss/beamsit.html.

24
Boeing Math Group.
Intelligent Iterative Solver Service (IISS), January 2005.
http://www.boeing.com/phantom/iiss/.

25
R. Boisvert, R. Pozo, K. Remington, R. Barrett, and J. Dongarra.
Matrix Market: A Web Resource for Test Matrix Collections.
The Quality of Numerical Software: Assessment and Enhancement, pages 125-137, 1997.

26
Boost.
Basic Linear Algebra: uBLAS, November 2004.
http://www.boost.org/libs/numeric/ublas/.

27
Boost.
The Boost C++ Libraries, November 2004.
http://www.boost.org/.

28
T.J. Bordelon, X.-L. Wang, C.M. Maziar, and A.F. Tasch.
Accounting for Bandstructure Effects in the Hydrodynamic Model: A First-Order Approach for Silicon Device Simulation.
Solid-State Electron., 35(2):131-139, 1992.

29
I.N Bronstein, K.A. Semendjajew, G. Musiol, and H. Mühlig.
Taschenbuch der Mathematik, 3. überarbeitete und erweiterte Auflage.
Verlag Harri Deutsch, Frankfurt am Main, Thun, 19997.

30
E. Buturla, P. Cottrell, B. Grossman, and K. Salsburg.
Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program.
IBM J.Res.Dev., 44(1-2):142-156, 2000.

31
D.M. Caughey and R.E. Thomas.
Carrier Mobilities in Silicon Empirically Related to Doping and Field.
Proc.IEEE, 52:2192-2193, 1967.

32
H. Ceric, A. Hoessinger, T. Binder, and S. Selberherr.
Modeling of Segregation on Material Interfaces by Means of the Finite Element Method.
In Proc. 4th IMACS Symposium on Mathematical Modeling, pages 445-452, Vienna, Austria, February 2003.

33
J. Cervenka.
Three-Dimensional Mesh Generation for Device and Process Simulation.
Dissertation, Technische Universität Wien, 2004.

34
R. Chandra, L. Dagum, D. Korh, D. Maydan, J. McDonald, and R. Menon.
Parallel Programming in OpenMP.
Academic Press, San Diego, London, San Francisco, 2001.

35
R. C. Clarke and J. W. Palmour.
SiC Microwave Power Technologies.
Proc.IEEE, 90(6):987-992, 2002.

36
T. Clees and K. Stüben.
Algebraic Multigrid for Industrial Semiconductor Device Simulation.
In Proc. Challenges in Scientific Computing, pages 110-130. Springer, Berlin, 2002.

37
T. Clees, K. Stüben, and S. Mijalkovic.
Application of an Algebraic Multigrid Solver to Process Simulation Problems.
In Proceedings 2000 International Conference on Simulation of Semiconductor Processes and Devices, pages 225-228. IEEE, 2000.

38
Computational Electronics Research Group, University of Purdue.
Nanomos, 2002.
http://www.nanohub.org/simulation_tools/nanomos_tool_information.

39
Computer Science Department, University of Basel, Switzerland.
Parallel Sparse Direct Linear Solver PARDISO - User Guide Version 1.0, 2003.

40
Comsol, Inc., Burlington, MA.
FEMLAB, January 2005.
http://www.comsol.com/.

41
Cree.
Cree's Silicon Carbide RF Products, 2003.
http://www.cree.com/Products/rf_sicproducts.asp.

42
Crosslight, Inc.
APSYS, 2005.
http://www.crosslight.com/downloads/downloads.html.

43
E. Cuthill and J. McKee.
Reducing the Bandwidth of Sparse Symmetric Matrices.
In ACM Conf., pages 157-172, 1969.

44
T.A. Davis, J.R. Gilbert, S.I. Larimore, and E.G. Ng.
A Column Approximate Minimum Degree Ordering Algorithm.
ACM Trans.Mathematical Software, 30(3):353-376, 2004.

45
M.J. Deen and T.A. Fjeldly.
CMOS RF Modeling, Characterization and Applications.
World Scientific, 2002.

46
J. Demel.
JANAP - Ein Programm zur Simulation von elektrischen Netzwerken.
Dissertation, Technische Universität Wien, 1989.

47
Department of Computer and Science and Engineering, University of Florida.
Unsymmetric Multi-Frontal Package (UMFPACK), January 2005.
http://www.cise.ufl.edu/research/sparse/umfpack/.

48
Department of Electrical Engineering and Computer Sciences, University of Berkeley, Berkeley, CA.
BSIM4.4.0 MOSFET Model, March 2004.

49
H.A. Van der Vorst.
BI-CGSTAB: A Fast and Smoothly Converging Variant of BI-CG for the Solution of Nonsymmetric Linear Systems.
SIAM J.Sci.Stat.Comput. 13(2), pages 631-644, 1992.

50
P. Deuflhard.
A Modified Newton Method for the Solution of Ill-Conditioned Systems of Nonlinear Equations with Application to Multiple Shooting.
Numer.Math., 22:289-315, 1974.

51
H.J. Dirschmid.
Mathematische Grundlagen der Elektrotechnik.
Vieweg, 1986.

52
H.J. Dirschmid.
Matrizen und Lineare Gleichungen.
Manz, 1998.

53
J.J. Dongarra and J.R. Bunch.
LINPACK User's Guide.
SIAM, Philadelphia, 1990.

54
J.J. Dongarra, I.S. Duff, D.C. Sorensen, and H.A. Van der Vorst.
Numerical Linear Algebra for High-Performance Computers.
SIAM, Philadelphia, 1998.

55
I. Duff, R. Grimes, and J. Lewis.
User's Guide for the Harwell-Boeing Sparse Matrix Collection, October 1992.

56
I.S. Duff and J.A. Scott.
A Parallel Direct Solver for Large Sparse Highly Unsymmetric Linear Systems.
ACM Trans.Mathematical Software, 30(2):95-117, 2004.

57
M. Enciso-Aguilar, F. Aniel, P. Crozat, R. Adde, H.-J. Herzog, T. Hackbarth, U. König, and H. v. Känel.
DC and High Frequency Performance of 0.1$ \,\mu$m n-type Si/Si$ _{0.6}$Ge$ _{0.4}$ MODFET with $ \ensuremath{f_\mathrm{max}}= 188\,$GHz at 300$ \,$K and $ \ensuremath{f_\mathrm{max}}
= 230\,$GHz at 50$ \,$K.
Electron.Lett., 39(1):149-151, 2003.

58
W.L. Engl and H. Dirks.
Numerical Device Simulation Guided by Physical Approaches.
In B.T. Browne and J.J. Miller, editors, Numerical Analysis of Semiconductor Devices and Integrated Circuits, volume I, pages 65-93, Dublin, 1979. Boole Press.

59
W.L. Engl and H. Dirks.
Functional Device Simulation by Merging Numerical Building Blocks.
In B.T. Browne and J.J. Miller, editors, Numerical Analysis of Semiconductor Devices and Integrated Circuits, volume II, pages 34-62, Dublin, 1981. Boole Press.

60
M. Galassi et al.
GNU Scientific Library Reference Manual.
Network Theory Limited, 2002.

61
M.A. Heroux et al.
An Overview of the Trilinos Package Architecture.
Sandia National Laboratories, 2003.

62
Fachbereich Elektrotechnik, Hochschule für Technik und Wirtschaft Dresden (FH).
SIMBA - Dreidimensionale numerische Simulation elektronischer Bauelemente, 2005.
http://www.htw-dresden.de/~klix/simba/welcome.html.

63
R.D. Falgout, J.E. Jones, and U.M. Yang.
The Design and Implementation of Hypre, a Library of Parallel High Performance Preconditioners.
In Numerical Solution of Partial Differential Equations on Parallel Computers. Springer, 2004.
(to appear).

64
S. Filippone and M. Colajanni.
PSBLAS: A Library for Parallel Linear Algebra Computation on Sparse Matrices.
ACM Trans.Mathematical Software, 26(4):527-550, 2000.

65
C. Fischer.
Bauelementsimulation in einer Computergestützten Entwurfsumgebung.
Dissertation, Technische Universität Wien, 1994.
http://www.iue.tuwien.ac.at.

66
C. Fischer and S. Selberherr.
Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners.
In Intl. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD V, pages 123-126, Honolulu, 1994.

67
International Technology Roadmap for Semiconductors.
International Technology Roadmap for Semiconductors - 2001 Edition, 2001.
http://public.itrs.net.

68
G. Freeman, B. Jgannathan, S.J. Jeng, J.-S. Rieh, A.D. Stricker, D.C. Ahlgren, and S. Subbanna.
Transistor Design and Application Considerations for $ >$200-GHz SiGe HBTs.
IEEE Trans.Electron Devices, 50(3):645-655, 2003.

69
G. Freeman, J.-S. Rieh, B. Jagannathan, Z. Yang, F. Guarin, A. Joseph, and D. Ahlren.
SiGe HBT Performance and Reliability Trends Through $ f_\textrm {T}$ of 350 GHz.
In Proc. International Reliability Physics Symposium, pages 332-338, Dallas, TX, 2003.

70
A. Gehring and H. Kosina.
Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method.
In International Workshop on Computational Electronics, Purdue, 2004.

71
A. George and J.W.H. Liu.
An Automatic Nested Dissection Algorithm for Irregular Finite Element Problems.
SIAM J.Numer.Anal., 15(5):1053-1069, 1978.

72
A. George and D.R. McIntyre.
On the Application of the Minimum Degree Algorithm to Finite Element Systems.
SIAM J.Numer.Anal., 15(1):90-112, 1978.

73
Gesellschaft für Computer Simulationstechnik GmbH, Darmstadt.
Maxwell's Equations by Finite Integration Algorithms (MAFIA), January 2005.
http://www.cst.de/.

74
I. Getreu.
Modeling the Bipolar Transistor.
Elsevier, Amsterdam, 1978.

75
N.E. Gibbs, W.G. Poole, and P.K. Stockmeyer.
An Algorithm for Reducing the Bandwidth and Profile of a Sparse Matrix.
SIAM J.Numer.Anal., 13(2):236-250, 1976.

76
R. Girvan.
Partial Differential Equations - Differential Approaches, December 2001.
http://www.scientific-computing.com/review4.html.

77
B.V. Gokhale.
Numerical Solutions for a One-Dimensional Silicon n-p-n Transistor.
IEEE Trans.Electron Devices, 17(8):594-602, 1970.

78
G.H. Golub and C.F. Van Loan.
Matrix Computations.
John Hopkins University Press, second edition, 1989.

79
N.I.M. Gould and J.A. Scott.
A Numerical Evaluation of HSL Packages for the Direct Solution of Large Sparse Symmetric Linear Systems of Equations.
ACM Trans.Mathematical Software, 30(3):300-325, 2004.

80
H. Grad.
On the Kinetic Theory of Rarified Gases.
Comm. Pure and Appl.Math., 2:311-407, 1949.

81
T. Grasser.
Mixed-Mode Device Simulation.
Dissertation, Technische Universität Wien, 1999.
http://www.iue.tuwien.ac.at.

82
T. Grasser.
Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation.
Physica A, 349(1/2):221-258, 2005.

83
T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, and S. Selberherr.
Advanced Transport Models for Sub-Micrometer Devices.
In Proc. Simulation of Semiconductor Processes and Devices, Munich, Germany, September 2004.

84
T. Grasser, R. Kosik, C. Jungemann, H. Kosina, and S. Selberherr.
Non-Parabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data.
J.Appl.Phys., pages 1-10, 2005.
(in print).

85
T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr.
Using Six Moments of Boltzmann's Transport Equation for Device Simulation.
J.Appl.Phys., 90(5):2389-2396, 2001.

86
T. Grasser, H. Kosina, C. Heitzinger, and S. Selberherr.
Characterization of the Hot Electron Distribution Function Using Six Moments.
J.Appl.Phys., 91(6):3869-3879, 2002.

87
T. Grasser, H. Kosina, and S. Selberherr.
On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models.
In Proc. Simulation of Semiconductor Processes and Devices, Munich, Germany, September 2004.

88
T. Grasser and S. Selberherr.
Fully-Coupled Electro-Thermal Mixed-Mode Device Simulation of SiGe HBT Circuits.
IEEE Trans.Electron Devices, 48(7):1421-1427, 2001.

89
T. Grasser, T.-w. Tang, H. Kosina, and S. Selberherr.
A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation.
Proc.IEEE, 91(2):251-274, 2003.

90
M.A. Green and J. Shewchun.
Application of the Small-Signal Transmission Line Equivalent Circuit Model to the A.C., D.C. and Transient Analysis of Semiconductor Devices.
Solid-State Electron., 17(9):941-949, 1984.

91
M. Gritsch.
Numerical Modeling of Silicon-on-Insulator MOSFETs.
Dissertation, Technische Universität Wien, 2002.
http://www.iue.tuwien.ac.at/phd/gritsch.

92
M.J. Grote and T. Huckle.
Parallel Preconditioning with Sparse Approximate Inverses.
SIAM J.Sci.Comput., 18(3):838-853, 1997.

93
A. Gupta.
Recent Advances in Direct Methods for Solving Unsymmetric Sparse Systems of Linear Equations.
ACM Trans.Mathematical Software, 28(3):310-324, 2002.

94
M.S. Gupta.
Power Gain in Feedback Amplifiers, a Classic Revisited.
IEEE Trans.Microwave Theory and Techniques, 40(5):864-879, 1992.

95
M.S. Gupta.
What Is RF?
IEEE Microwave Magazine, pages 12-16, December 2001.

96
O. Heinreichsberger.
Transiente Simulation von Silizium-MOSFETs.
Dissertation, Technische Universität Wien, 1992.

97
K.A. Hennacy, Y.-J. Wu, N. Goldsman, and I. Mayergoyz.
Deterministic MOSFET Simulation Using a Generalized Spherical Harmonic Expansion of the Boltzmann Equation.
Solid-State Electron., 38(8):1489-1495, 1995.

98
Hewlett Packard.
Test and Measurement Application Note 95-1, S-Parameter Techniques, 1995.

99
C.W. Ho, A.E. Ruehli, and P.A. Brennan.
The Modified Nodal Approach to Network Analysis.
IEEE Trans.Circuits and Systems, CAS-22(6):504-509, 1975.

100
H. Hofmann.
Das elektromagnetische Feld.
Springer, 1986.

101
P. Huguet, P. Auxemery, G. Pataut, P. Fellon, D. Geiger, and H. Jung.
Space Evaluation of P-HEMT MMIC Process PH15.
In Proc. European Space Components Conf., pages 199-204, Noordwijk, 2000.

102
M. Ida, K. Kurishima, N. Watanabe, and T. Enoki.
InP/InGaAs DHBTs with 341-GHz f $ _\mathrm{T}$ at High Current Density of over 800 kA/cm$ ^2$.
In IEDM Tech.Dig., pages 776-779, Washington, D.C., 2001.

103
L. Ingber.
Very Fast Simulated Re-Annealing.
Mathematical Computer Modelling, 12:967-973, 1989.
http://www.ingber.com/asa89_vfsr.ps.gz.

104
Institut für Grundlagen der Elektrotechnik und Elektronik, Technische Universität Dresden.
DEVICE, 2000.
http://www.iee.et.tu-dresden.de/~schroter/Device/Doc/device_descr.

105
Institut für Mikroelektronik, Technische Universität Wien, Austria.
Minimos-NT 2.1 User's Guide.
http://www.iue.tuwien.ac.at/software/minimos-nt, 2004.

106
Institut National de Recherche en Informatique et en Automatique, Rocquencourt.
Scilab - A Scientific Software Package, January 2005.
http://scilabsoft.inria.fr/.

107
Intel.
Intel Math Kernel Library 7.2, January 2005.
http://www.intel.com/software/products/mkl/.

108
inuTech - Innovative Numerical Technologies, Nürnberg.
DIFFPACK, January 2005.
http://www.diffpack.com/.

109
B.M. Irons.
A Frontal Solution Program for Finite Element Analysis.
Int.J.Numer.Meth.Eng., 2:5-32, 1970.

110
ISE Integrated Systems Engineering AG, Zürich, Switzerland.
DIOS-ISE, ISE TCAD Release 8.0, July 2002.

111
ISE Integrated Systems Engineering AG, Zürich, Switzerland.
DESSIS-ISE, ISE TCAD Release 9.0, August 2003.

112
C. Jacoboni and P. Lugli.
The Monte Carlo Method for Semiconductor Device Simulation.
Springer, Wien-New York, 1989.

113
B. Jgannathan, M. Khater, F. Pagette, J.-S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, e. Mengistu, K.T. Schonenberg, C.M. Schnabel, P. Smith, D.C. Ahlgren, G. Freeman, K. Stein, and S. Subbanna.
Self-Aligned SiGe NPN Transistor With 285$ \,$GHz $ \ensuremath{f_\mathrm{max}}$ and 207$ \,$GHz $ \ensuremath{f_\textrm{T}}$ in a Manufacturable Technology.
IEEE Electron Device Lett., 23(5):258-260, 2002.

114
J.S. Rosen.
General ANSYS Overview, January 2005.
http://www.andrew.cmu.edu/user/jsrosen/ thermalFL/overview.htm.

115
C. Jungemann and B. Meinerzhagen.
Hierarchical Device Simulation: The Monte-Carlo Perspective.
Springer, Wien-New York, 2003.

116
C. Jungemann, B. Neinhüs, and B. Meinerzhagen.
Full-Band Monte Carlo Device Simulation of a SiGe/Si HBT with a Realistic Ge Profile.
IEICE Trans.Electron., E83-C(8):1228-1234, 2000.

117
G. Karypis and V. Kumar.
A Fast and High Quality Multilevel Scheme for Partitioning Irregular Graphs.
SIAM Journal on Scientific Computing, 20(1):359-392, 1998.

118
R. Klima, T. Grasser, and S. Selberherr.
The Control System of the Device Simulator Minimos-NT.
In Proc. 2nd WSEAS Intl. Conf. on Simulation, Modelling and Optimization, pages 281-284, Skiathos, Greece, September 2002.

119
C.H. Koelbel, G.L. Steel Jr., and M.E. Zosel.
The High Performance Fortran Handbook.
Scientific and Engineering Computational, MIT Press, Cambridge, MA, 1994.

120
S.J. Koester, K.L. Saenger, J.O. Chu, Q.C. Ouyang, J.A. Ott, K.A. Jenkins, D.F. Canaperi, J.A. Tornello, C.V. Jahnes, and S.E.Steen.
Laterally Scaled Si-Si$ _{0.7}$Ge$ _{0.3}$ n-MODFETs with $ f_\mathrm{max}$ $ >$ 200$ \,$GHz and Low Operating Bias.
IEEE Electron Device Lett., 26(3):178-180, 2005.

121
S.J. Koester, K.L. Saenger, J.O. Chu, Q.C. Ouyang, J.A. Ott, M.A. Rooks, D.F. Canaperi, J.A. Tornello, C.V. Jahnes, and S.E.Steen.
80 nm gate-length Si/Si$ _{0.7}$Ge$ _{0.3}$ n-MODFET with 194$ \,$GHz fmax.
Electron.Lett., 39(23):1684-1685, 2003.

122
H. Kosina, M. Nedjalkov, and S. Selberherr.
Theory of the Monte Carlo Method for Semiconductor Device Simulation.
IEEE Trans.Electron Devices, 47(10):1898-1908, 2000.

123
H. Kosina and S. Selberherr.
A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis.
IEEE Trans.Computer-Aided Design, 13(2):201-210, 1994.

124
H. Kosina and Ch. Troger.
SPIN -- A Schrödinger-Poisson Solver Including Nonparabolic Bands.
VLSI Design, 8(1-4):489-493, 1998.

125
K.S. Kundert.
Introduction to RF Simulation and Its Application.
IEEE J.Solid-State Circuits, 34(9):1298-1319, 1999.

126
H.P. Langtangen.
Computational Partial Differential Equations, Numerical Methods and Diffpack Programming, Lecture Notes in Computational Science and Engineering.
Springer Verlag, 1999.

127
S.E. Laux.
Techniques for Small-Signal Analysis of Semiconductor Devices.
IEEE Trans.Electron Devices, ED-32(10):2028-2037, 1985.

128
R.B. Lehoucq, D.C. Sorensen, and C. Yang.
ARPACK Users' Guide: Solution of Large Scale Eigenvalue Problems with Implicitly Restarted Arnoldi Methods., October 1997.

129
C.D. Levermore.
Moment Closure Hierarchies for Kinetic Theories.
J.Stat.Phys., 83(1):1021-1065, 1996.

130
B. Li, S. Prasas, L.-W. Yang, and S.C. Wang.
A Semianalytical Parameter-Extraction Procedure for HBT Equivalent Circuits.
IEEE Trans.Microwave Theory and Techniques, 46(10):1427-1435, 1998.

131
N. Li, Y. Saad, and E. Chow.
Crout Versions of ILU for General Sparse Matrices.
SIAM J.Sci.Comput., 25(2):716-728, 2003.

132
J.J. Liou and F. Schwierz.
RF MOSFET: Recent Advances, Current Status and Future Trends.
Solid-State Electron., 47(11):1881-1895, November 2003.

133
Livermore Software Technology Corporation Corp., Livermore, CA.
LS-DYNA, January 2005.
http://www.lstc.com/.

134
M. Lundstrom.
Fundamentals of Carrier Transport.
Cambridge University Press, 2000.

135
W. Ma, S. Kaya, and A. Asenov.
Scaling of RF Linearity in DG and SOI MOSFETs.
In Proc. Intl.Symp. on Electron Devices for Microwave and Optoelectronic Applications, pages 255-260, Orlando, Fl, 2003.

136
P.A. Markowich, C.A. Ringhofer, and C. Schmeiser.
Semiconductor Equations.
Springer Verlag, 1990.

137
A.H. Marshak and K.M. van Vliet.
Electrical Current in Solids with Position-Dependent Band Structure.
Solid-State Electron., 21:417-427, 1978.

138
A.H. Marshak and C.M. VanVliet.
Electrical Current and Carrier Density in Degenerate Materials with Nonuniform Band Structure.
Proc.IEEE, 72(2):148-164, 1984.

139
Mathematical and Computational Sciences Division, Information Technology Laboratory, National Institute of Standards and Technology.
The Matrix Market.
http://math.nist.gov/MatrixMarket/info.html.

140
Mathematics and Engineering Analysis Unit, Boeing Phantom Works.
SParse Object Oriented Linear Equations Solver (SPOOLES), January 1999.
http://www.netlib.org/linalg/spooles/spooles.2.2.html.

141
MathWorks, Natick, MA.
MATLAB and Simulink Products, February 2005.
http://www.mathworks.com/.

142
H. Mau.
Anpassung und Implementation des Energietransportmodells zur vergleichenden Simulation mit dem Drift-Diffusions-Modell an SiGe-Heterobipolartransistoren.
Dissertation, Technische Universität Ilmenau, 1997.

143
C.C. McAndrew, J.A. Seitchik, D.F. Bowers, M. Dunn, I. Getreu, M. McSwain, S. Moinian, J. Parker, D.J. Roulston, M. Schröter, P. van Wijnen, and L.F. Wagner.
VBIC95, The Vertical Bipolar Inter-Company Model.
IEEE J.Solid-State Circuits, SC-31(10):1476-1483, 1996.

144
J.R.F. McMacken and S.G. Chamberlain.
CHORD: A Modular Semiconductor Device Simulation Development Tool Incorporating External Network Models.
IEEE Trans.Computer-Aided Design, 8(8):826-836, 1989.

145
R. Menon and L. Dagum.
OpenMP: An Industry-Standard API for Shared-Memory Programming.
IEEE Computational Science & Engineering, pages 1:46-55, 1998.

146
M.S. Mock.
An Initial Value Problem from Semiconductor Device Theory.
SIAM J.Math.Anal., 5(4):597-612, 1974.

147
L.W. Nagel.
SPICE2: A Computer Program to Simulate Semiconductor Circuits.
Technical Report UCB/ERL M520, University of California, Berkeley, 1975.

148
Nanoelectronics Group at Raytheon TI Systems.
Nemo, 1999.
http://www.cfdrc.com/nemo/.

149
M. Nedjalkov, R. Kosik, H. Kosina, and S. Selberherr.
A Wigner Equation for Nanometer and Femtosecond Transport Regime.
In Proc. 1st IEEE Conference on Nanotechnology, pages 277-281, Maui, USA, October 2001. IEEE.

150
M. Nedjalkov, R. Kosik, H. Kosina, and S. Selberherr.
Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator.
In Proc. Simulation of Semiconductor Processes and Devices, pages 187-190, Kobe, Japan, September 2002.

151
M. Nedjalkov, H. Kosina, S. Selberherr, and I. Dimov.
A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors.
VLSI Design, 13(1-4):405-411, 2001.

152
netlib.
The Netlib Repository - Netlib, 2005.
http://www.netlib.org.

153
Network for Computational Nanotechnology.
nanoHub, 2005.
http://www.nanohub.org.

154
P. G. Neudeck.
SiC Technology.
In The VLSI Handbook, The Electrical Engineering Handbook Series, W.-K. Chen, Ed. Boca Raton, Florida: CRC Press and IEEE Press, pages 6.1-6.24, 2000.

155
Numerical Algorithms Groups.
Numerical Algorithms Group, September 2004.
http://www.nag.co.uk/main_engineering.asp.

156
A. Okabe, B. Boots, and K. Sugihara.
Spatial Tessellations.
Wiley, Chichester, 1992.

157
Open Systems Laboratory, Indiana University Bloomington.
Blitz++ - Object-Oriented Scientific Computing, November 2004.
http://www.oonumerics.org/blitz/.

158
T. Ottmann and P. Widmayer.
Algorithmen und Datenstrukturen.
Wissenschaftsverlag, Mannheim-Leipzig-Wien-Zürich, 1993.

159
P.S. Pacheco.
Parallel Programming with MPI.
Morgan Kaufman, San Francisco, 1997.

160
V. Palankovski and R. Quay.
Analysis and Simulation of Heterostructure Devices.
Springer, Wien, New York, 2004.

161
V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, and S. Selberherr.
Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation.
In Proc. International Symposium on Compound Semiconductors, pages 303-306, Lausanne, Switzerland, 2002.

162
V. Palankovski, S. Wagner, and S. Selberherr.
Numerical Analysis of Compound Semiconductor RF Devices.
In Proc. GaAs IC Symposium, pages 107-110, San Diego, CA, 2003.
(invited).

163
Parallel Algorithms and Optimization Group, Ecole Nationale Supérieure d'Electrotechnique, d'Electronique, d'Informatique, d'Hydraulique et des Télécommunications, Toulouse.
MUMPS: A Multifrontal Massively Parallel Sparse Direct Solver, July 2003.
http://www.enseeiht.fr/lima/apo/MUMPS/.

164
A. Prechtl.
Vorlesungen über die Grundlagen der Elektrotechnik, Band 2.
Springer, Wien-New York, 1995.

165
W. H. Press, S.A. Teukolsky, W.T. Vetterling, and B.P. Flannery.
Numerical Recipes in C.
Cambridge University Press, 1997.

166
W. L. Pribble, J. W. Palmour, S. T. Sheppard, R. P. Smith, S. T. Allen, T. J. Smith, Z. Ring, J. J. Sumarkeris, A. W. Saxler, and J. W. Milligan.
Applications of SiC MESFETs and GaN HEMTs in Power Amplifier Design.
IEEE MTT-S Digest, 3:1819-1822, 2002.

167
Python Software Foundation.
Python, January 2005.

168
T. Quarles, A.R. Newton, D.O. Pederson, and A. Sangiovanni-Vincentelli.
SPICE 3 Version 3F5 User's Manual.
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, March 1994.

169
R. Quay.
Analysis and Simulation of High Electron Mobility Transistors.
Dissertation, Technische Universität Wien, 2002.
http://www.iue.tuwien.ac.at/phd/quay.

170
R. Quay, R. Kiefer, F. van Raay, H. Massler, S. Ramberger, S. Muller, M. Dammann, M. Mikulla, M. Schlechtweg, and G. Weimann.
Integration of a 0.13-$ \ \mu $m CMOS and a High Performance Self-Aligned SiGe HBT Featuring Low Base Resistance.
In Intl.Electron Devices Meeting, pages 673-676, San Francisco, 2002.

171
B. Razavi.
CMOS Technology Characterisation for Analog and RF Design.
IEEE J.Solid-State Circuits, 34(3):268-276, 1999.

172
J.-S. Rieh, B. Jagannathan, H. Chen, K. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S.-J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D.C. Ahlgren, G. Freeman, K. Stein, and S. Subbanna.
SiGe HBTs with Cut-off Frequency of 350 GHz.
In Intl.Electron Devices Meeting, pages 771-774, San Francisco, 2002.

173
J.-S. Rieh, B. Jagannathan, H. Chen, K. Schonenberg, S.-J. Jeng, M. Khater, D.C. Ahlgren, G. Freeman, and S. Subbanna.
Performance and Design Considerations for High Speed SiGe HBTs of $ f_\textrm {T}$/ $ f_\mathrm{max}$=375GHz/210GHz.
In Proc. International Conference on Indium Phosphide and Related Materials, pages 374-377, Santa Barbara, CA, 2003.

174
C. Ringhofer, C. Schmeiser, and A. Zwirchmayer.
Moment Methods for the Semiconductor Boltzmann Equation in Bounded Position Domains.
SIAM J.Numer.Anal., 39(3):1078-1095, 2001.

175
J.G. Rollins and J. Choma.
Mixed-Mode PISCES-SPICE Coupled Circuit and Device Solver.
IEEE Trans.Computer-Aided Design, 7:862-867, 1988.

176
G.-C. Rota.
Twelve Problems in Probability no One Likes to Bring Up.
In Algebraic Combinatorics and Computer Science, pages 57-93. Springer Italia, Milan, 2001.

177
F.M. Rotella, G. Ma, Z. Yu, and R.W. Dutton.
Modeling, Analysis, and Design of RF LDMOS Devices Using Harmonic Balance Device Simulation.
IEEE Trans.Microwave Theory and Techniques, 48(6):991-999, 2002.

178
Y. Saad.
SPARSKIT: A Basic Tool Kit for Sparse Matrix Computations.
Technical report, RIACS, NASA Ames Research Center, Moffett Field, CA 94035, May 1990.

179
Y. Saad and M.H. Schultz.
GMRES: A Generalized Minimal Residual Algorithm for Solving Nonsymmetric Linear Systems.
SIAM J.Sci.Stat.Comput., 7(3):856-869, 1986.

180
Sandia National Laboratories.
The Trilinos Project, January 2005.
http://software.sandia.gov/Trilinos/.

181
O. Schenk and K. Gärtner.
Solving Unsymmetric Sparse Systems of Linear Equations with PARDISO.
Future Generation Computer Systems, 2003.
Accepted, in press.

182
O. Schenk, K. Gärtner, and W. Fichtner.
Efficient Sparse LU Factorization with Left-Right Looking Strategy on Shared Memory Multiprocessors.
BIT, 40(1):158-176, 2003.

183
O. Schenk, S. Röllin, and A. Gupta.
The Effects of Unsymmetric Matrix Permutations and Scalings in Semiconductor Device and Circuit Simulation.
IEEE Trans.Computer-Aided Design, 23(3):400-411, 2004.

184
I. Schnyder, M. Rohner, E. Gini, D. Huber, C. Bergamaschi, and H. Jackel.
A Laterally Etched Collector InP/InGaAs(P) DHBT Process for High Speed Power Applications.
In Indium Phosphide and Related Materials, pages 477-480, Williamsburg, VA, 2000.

185
D. Schroeder.
Modelling of Interface Carrier Transport for Device Simulation.
Springer, 1994.

186
W. Schroeder, K. Martin, and B. Lorensen.
The Visualization Toolkit.
Prentice Hall, 1996.

187
R. Schultheis, N. Bovolon, J.-E. Müller, and P. Zwicknagl.
Modelling of Heterojunction Bipolar Transistors (HBTs) Based on Gallium Arsenide (GaAs).
Intl.J. of RF and Microwave Computer-Aided Engineering, 10(1):33-42, 2000.

188
H.R. Schwarz.
Numerische Mathematik.
Teubner, Stuttgart, 1997.
4. Auflage.

189
F. Schwierz and J.J. Liou.
Modern Microwave Transistors: Theory, Design, and Performance.
Wiley, New Jersey, 2003.

190
J.A. Scott.
Parallel Frontal Solvers for Large Sparse Linear Systems.
ACM Trans.Mathematical Software, 29(4):395-417, 2003.

191
J.A. Scott.
MA57 - A Code for the Solution of Sparse Symmetric Definite and Indefinitie Systems.
ACM Trans.Mathematical Software, 30(2):118-144, 2004.

192
S. Seeger and K.H. Hoffmann.
The Cumulant Method for Computational Kinetic Theory.
Continuum Mech. Thermodyn., 12:403-421, 2000.

193
S. Selberherr.
Analysis and Simulation of Semiconductor Devices.
Springer, Wien-New York, 1984.

194
S. Selberherr.
Device Modeling and Physics.
Physica Scripta, T35:293-298, 1991.

195
S. Selberherr, A. Schütz, and H.W. Pötzl.
MINIMOS--A Two-Dimensional MOS Transistor Analyzer.
IEEE Trans.Electron Devices, ED-27(8):1540-1550, 1980.

196
G. Sewell.
TWODEPEP, a Small General-Purpose Finite Element Program.
Angewandte Informatik, 4:249-253, 1982.

197
G. Sewell.
PDE2D: Easy-to-Use Software for General Two-Dimensional Partial Differential Equations.
Advances in Engineering Software, 17(2):105-112, 1993.

198
K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu.
550 GHz $ f_\textrm {T}$ Pseudomorphic InP-HEMTs with Reduced Source-Drain Resistance.
In Proc. 61st Device Research Conference, pages 145-146, Salt Lake City, UT, 2003.

199
K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu.
547-GHz $ f_\textrm {T}$ In$ _{0.7}$Ga$ _{0.3}$As-In$ _{0.52}$Al$ _{0.48}$As HEMTs with Reduced Source and Drain Resistance.
IEEE Electron Device Lett., 25(5):241-243, 2004.

200
Silvaco, Santa Clara, California.
Atlas User's Manual - Device Simulation Software, December 2002.

201
T. Simlinger.
Simulation von Heterostruktur-Feldeffekttransistoren.
Dissertation, Technische Universität Wien, 1996.
http://www.iue.tuwien.ac.at.

202
B.T. Smith, J.M. Boyle, and J.J. Dongarra.
Matrix Eigensystem Routines - EISPACK Guide.
Springer, 1976.

203
Software & Analysis of Advanced Materials Processing Center, University of Florida.
FLOODS and FLOOPS, 2002.
http://www.swamp.tec.ufl.edu/~flooxs/.

204
A. Stach.
Simulation von MOSFET-Schaltungen.
Diplomarbeit, Technische Universität Wien, 1995.

205
Stanford TCAD Group.
PISCES-2ET.
Stanford University, Stanford, CA, 1994.
http://www-tcad.stanford.edu/tcad.html.

206
Stanford TCAD Group.
PISCES-2H-B.
Stanford University, Stanford, CA, June 1997.
http://www-tcad.stanford.edu/tcad.html.

207
Stanford TCAD Group.
Stanford TCAD Tools, 2004.
http://www-tcad.stanford.edu/tcad.html.

208
M.B. Steer, J.W. Brandler, and C.M. Snowden.
Computer-Aided Design of RF and Microwave Circuits and Systems.
IEEE Trans.Microwave Theory and Techniques, 50(3):996-1005, 2002.

209
R. Stratton.
Diffusion of Hot and Cold Electrons in Semiconductor Barriers.
Physical Review, 126(6):2002-2014, 1962.

210
D. Streit, R. Lai, A. Oki, and A. Gutierrez-Aitken.
InP HEMT and HBT Technology and Applications.
In Proc. Intl.Symp. on Electron Devices for Microwave and Optoelectronic Applications, pages 14-17, Manchester, UK, 2002.

211
A.D. Stricker, J.B. Johnson, G. Freeman, and J.-S. Rieh.
Design and Optimization of a 200 GHz Sige HBT Collector Profile by TCAD.
Applied Surface Science, 224/1-4:324-329, 2004.

212
B. Stroustrup.
C++ Programming Language.
Addison-Wesley, 1997.

213
K. Stüben and T. Clees.
SAMG User's Manual Release 21c.
Fraunhofer Institute for Algorithms and Scientific Computing, 2003.

214
Synopsis, Freemont, CA.
Davinci, Three-Dimensional Device Simulation Program, Version 2002.4, February 2003.

215
Synopsis, Freemont, CA.
HSpice Circuit Simulator, February 2003.

216
Synopsis, Freemont, CA.
Medici, Two-Dimensional Device Simulation Program, Version 2002.4, February 2003.

217
S.M. Sze.
Physics of Semiconductor Devices.
Wiley, New York, second edition, 1981.

218
V. Temple and J. Shewchun.
Exact Frequency Dependent Complex Admittance of the MOS Diode Including Surface States.
Solid-State Electron., 16(1):93-113, 1973.

219
R. Thoma, A. Emunds, B. Meinerzhagen, H.J. Peifer, and W.L. Engl.
Hydrodynamic Equations for Semiconductors with Nonparabolic Band Structure.
IEEE Trans.Electron Devices, 38(6):1343-1353, June 1991.

220
B. Troyanovsky.
Frequency Domain Algorithms for Simulating Large Signal Distortion in Semiconductor Devices.
Dissertation, Stanford University, 1997.

221
B. Troyanovsky, F. Rotella, Z. Yu, R. W. Dutton, and J. Sato-Iwanaga.
Large Signal Analysis of RF/Microwave Devices with Parasitics Using Harmonic Balance Device Simulation.
In Proc. SASIMI, Fukuaoka, Japan, pages 178-179, 1996.

222
R. S. Tuminaro, M. Heroux, S. A. Hutchinson, and J. N. Shadid.
Official Aztec User's Guide: Version 2.1.
Sandia National Laboratories, December 1999.

223
University of California Berkeley.
SuperLU - Sparse Gaussian Elimination on High Performance Computers, January 2005.
http://www.cs.berkeley.edu/ demmel/SuperLU.html.

224
University of Tennessee.
Automatically Tuned Linear Algebra Software, July 2004.
http://math-atlas.sourceforge.net/.

225
W.V. VanRoosbroeck.
Theory of Flow of Electrons and Holes in Germanium and Other Semiconductors.
Bell Syst.Techn.J., 29:560-607, 1950.

226
Visual Numerics.
IMSL Numerical Libraries Family of Products, January 2005.
http://www.vni.com/products/imsl/index.html.

227
G.K. Wachutka.
Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling.
IEEE Trans.Computer-Aided Design, 9(11):1141-1149, November 1990.

228
S. Wagner.
The Minimos-NT Linear Equation Solving Module.
Diplomarbeit, Technische Universität Wien, 2001.

229
S. Wagner, T. Grasser, C. Fischer, and S. Selberherr.
A Simulator Module for Advanced Equation Assembling.
In Proc. 15th European Simulation Symposium ESS, pages 55-64, Delft, The Netherlands, 2003.

230
S. Wagner, T. Grasser, and S. Selberherr.
Evaluation of Linear Solver Modules for Semiconductor Device Simulation.
In Proc. 5th Intl. Conference on Mathematical Problems in Engineering and Aerospace Sciences ICNPAA, Timisoara, Romania, June 2004.
(in print).

231
S. Wagner, T. Grasser, and S. Selberherr.
Mixed-Mode Device and Circuit Simulation.
In Proc. 11th Intl. Conference Mixed Design of Integrated Circuits and Systems, pages 36-41, Szczecin, Poland, June 2004.
(invited).

232
S. Wagner, S. Holzer, R. Strasser, R. Plasun, T. Grasser, and S. Selberherr.
SIESTA - The Simulation Environment for Semiconductor Technology Analysis.
Institut für Mikroelektronik, 2003.

233
S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, and S. Selberherr.
A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs.
Applied Surface Science, 224/1-4:365-369, 2004.

234
M. Wall.
GAlib A C++ Library of Genetic Algorithm Components.
Massachusetts Institute of Technology, 2000.
http://lancet.mit.edu/ga.

235
E.X. Wang, M. Stettler, S. Yu, and C. Maziar.
Application of Cumulant Expansion to the Modeling of Non-local Effects in Semiconductor Devices.
In Proc. Intl. Workshop on Computational Electronics, pages 234-237, Piscataway, NJ, USA, 1998.

236
K. Washio.
High-speed SiGe HBTs and Their Applications.
Applied Surface Science, 224/1-4:306-311, 2004.

237
Webplexity.
nextnano$ ^3$, 2004.
http://www.webplexity.de/nextnano3.php.

238
R.C. Whaley, Antoine Petitet, and Jack J. Dongarra.
Automated Empirical Optimization of Software and the ATLAS Project.
Parallel Computing, 27(1-2):3-35, 2001.

239
P.H. Woerlee, M.J. Knitel, R. van Langevelde, D.B.M. Klaassen, L.F. Tiemeijer, A.J. Scholten, and A.T.A. Zegers van Duijnhoven.
RF-CMOS Performance Trends.
IEEE Trans.Electron Devices, 48(8):1776-1782, August 2001.

240
D.L. Woolard, H. Tian, R.J. Trew, M.A. Littlejohn, and K.W. Kim.
Hydrodynamic Electron-Transport Model: Nonparabolic Corrections to the Streaming Terms.
Physical Review B, 44(20):11119-11132, 1991.

241
Z. Yu, R.W. Dutton, B. Troyanovsky, and J. Sato-Iwanaga.
Large Signal Analysis of RF Circuits in Device Simulation.
IEICE Trans.Electron., E82-C(6):908-916, 1999.

242
A. P. Zhang, L.B. Rowland, E. B. Kaminsky, J. W. Kretchmer, R. A. Beaupre, J. L. Garrett, J. B. Tucker, B. J. Edward, J. Foppes, and A. F. Allen.
Microwave Power SiC MESFETs and GaN HEMTs.
In Proceedings of the IEEE Lester Eastman Conference on High Performance Devices, pages 181-185, 2002.

243
O.C. Zienkiewicz.
The Finite Element Method.
McGraw-Hill, 1977.

244
O. Zinke and H. Brunswig.
Hochfrequenztechnik.
Springer, 1999.


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S. Wagner: Small-Signal Device and Circuit Simulation