Material Properties

 

Metals	Al	Au	Ag	Cu	Al $_{\text{2}}$O $_{\text{3}}$
lattice constant [Å]	4.05	4.08	4.09	3.61
carrier concentration
[ $10^{22}/\text{cm}^{3}$]	18.07	5.90	5.86	8.47
Fermi energy [eV]	11.65	5.52	5.50	7.03
work function [eV]	4.25	4.3	4.3	4.4
relative permittivity					9.4
Semiconductors	Si	Ge	GaAs	InP	SiO $_{\text{2}}$
lattice constant [Å]	5.43	5.66	5.65	5.87
intrinsic carrier
concentration [ $1/\text{cm}^{3}$]	$1.2\cdot 10^{10}$	$2.4\cdot 10^{13}$	$2\cdot 10^{6}$	$1.2\cdot 10^{8}$
degeneracy carrier
concentration [ $1/\text{cm}^{3}$]	$5\cdot 10^{19}$	1019	1017
energy gap [eV]	1.12	0.67	1.424	1.35	9
electron effective mass	0.32	0.12	0.067	0.077
relative permittivity	11.8	16	13.1	12.35	3.9

Values are for room temperature (300 K). Most of them are taken from [14] and [7].