Publications

P9

C. Wasshuber, H. Kosina, and S. Selberherr.
A Comparative Study about Single-electron Memories.
submitted to IEEE Transactions on Electron Devices.

P8

C. Wasshuber and H. Kosina.
Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge.
VLSI Design, in print.

P7

C. Wasshuber, H. Kosina, and S. Selberherr.
Single-Electron Memories.
VLSI Design, in print.

P6

C. Wasshuber, H. Kosina, and S. Selberherr.
Simulation of single-electron devices and circuits.
IEEE Transactions on TCAD, in print.

P5

C. Wasshuber and H. Kosina.
A single-electron device and circuit simulator.
Supperlattices and Microstructures, Vol. 21, No. 1, pages 37-42, January 1997.

P4

C. Wasshuber and H. Kosina.
A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling.
In SISPAD'96, International Conference on Simulation of Semiconductor Processes and Devices, pages 135-136, September 1996.

P3

C. Wasshuber and H. Kosina.
A multipurpose single electron device and circuit simulator.
In Abstracts Silicon Nanoelectronics Workshop, page 37, Honolulu, 1996.

P2

C. Wasshuber and H. Kosina.
A single electron device and circuit simulator.
In Proceedings Nanostructures and Mesoscopic Systems, page 43, Santa Fe, 19.-24. May 1996.

P1

C. Wasshuber and K. Asada.
Non-approximate evaluation of macroscopic quantum tunneling of charge for the two-junction case at arbitrary temperatures and bias voltages.
Jpn. J. Appl. Phys., 34(9B):L1230-L1233, September 1995.