3.7.3 Field Oxide Isolation



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3.7.3 Field Oxide Isolation

 

We have simulated a field oxide isolation established by a standard LOCOS process. Silicon with a Å pad oxide is partly masked by a nitride layer. Into the channel-stop region we implanted boron at . The implanted profile is shown in Figure 3.7-7. The thick field oxide is grown in pyrogenic steam ambient (wet oxidation) at for .

The oxide growth was simulated using an analytical approximation (Section 4.1). The oxidation enhanced diffusion was simulated with the models OEDS and OED. The results for both models are shown in Figure 3.7-8, additionally the interstitial concentration after oxidation time as calculated from model OED is shown in Figure 3.7-9. The interstitial concentration is two orders of magnitude above equilibrium at the oxidizing area (Width ) and decays moderately into the bulk and more quickly under the nitride mask (Width ) which is an effective sink for point defects.

 

  



Martin Stiftinger
Wed Oct 19 13:03:34 MET 1994