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Dissertation T. Windbacher
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Contents
List of Figures
List of Tables
1. Introduction
2. Gate Stack Overview
2.1 High-k Gate Stacks
2.1.1 Flash Memory
2.1.2 Comparison Between Floating Gate and SONOS
2.1.3 Scaling of Floating Gate and SONOS
2.2 Strained Interfaces
2.2.1 Global Strain
2.2.2 Local Strain
2.3 Ferroelectric Gate Stacks
2.3.1 Ferroelectric Materials
2.3.2 Applications
2.4 Electrolytic Interfaces
2.5 Working Principle of a BioFET
3. Physical Influence of Strain on the Semiconductor Properties
3.1 Strain
3.2 Stress
3.3 Stress-Strain Relation
3.4 Miller Index Notation
3.5 The Influence of Strain on the Bulk Band Structure
3.5.1 Deformation Potential Theory
3.5.2 The k.p Method
4. Quantum Confinement in UTB Films
4.1 Quantization in UTB Films for Unprimed Subbands
4.1.1 Scaled Energy Dispersion Relation
4.1.2 Small Strain Values
4.1.3 High Values of
4.2 Effective Mass of Unprimed Subbands
4.3 Quantization in UTB Films for Primed Subbands
4.4 Effective Mass of Primed Subbands
5. Modeling of Electrolytic Interfaces
5.1 Electrochemistry of Ionic Soultions
5.2 Charge Transport in Electrolytes
5.2.1 Bulk Transport
5.2.2 Interface Transport
5.3 Insulator Surface Charge: The Double Layer
5.4 Stern Modification
5.5 Ionic Activity
5.6 Insulator Surface Charge: Site-Binding Model
5.7 The Potential Diagram of an ISFET Gate Stack
5.8 The ISFET as a Sensor
5.8.1 Sensing pH with an ISFET
5.8.2 Sensing via Catalysts
5.8.3 Examples for ISFETs as pH Sensor
6. Generalization of the ISFET Concept
6.1 Sensing via the Long-Range Field-Effect
6.2 Modeling BioFETs
6.2.1 Poisson-Boltzmann Model
6.2.2 Poisson-Boltzmann Model with Sheet Charge
6.2.3 Poisson-Boltzmann Model with Homogenized Interface Conditions
6.2.4 Extended Poisson-Boltzmann Model
6.2.5 Debye-Hückel Model
6.2.6 Buffers and Ionic Strength
6.3 Analytical Comparison between the Poisson-Boltzmann, the Extended Poisson-Boltzmann, and the Debye-Hückel Model
6.4 BioFET Examples
6.4.1 DNAFET
6.4.2 DNA Hybridization Sensors
6.4.3 Protein-FET - Streptavidin-Biotin-FET
7. Summary and Outlook
5.1 Re-expressing
as a Function of
5.2 Expressing the Equations (4.18) and (4.19)
5.3 Estimating the Total Charge in the Diffusive Layer
5.4 Relation Between Charge Density and Potential Drop in the MOSFET Channel
5.5 Flatband Potential and MOSFET Properties
Bibliography
Own Publications
Curriculum Vitae
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Dissertation T. Windbacher
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T. Windbacher: Engineering Gate Stacks for Field-Effect Transistors
as a Function of 
