Own Publications

1

R. Wittmann and S. Selberherr, ``NBTI Reliability Analysis for a Low-Power SRAM Cell,'' in Microelectronics Reliability, 2007, submitted.

2

R. Wittmann and S. Selberherr, ``A Monte Carlo Simulation Study for Ion Implantation into Crystalline Germanium,'' in Solid-State Electronics, 2007, submitted.

3

R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, and S. Selberherr, ``A Study of Boron Implantation into High Ge Content SiGe Alloys,'' in ECS Transactions SiGe: Materials, Processing, and Devices, vol. 3, (Cancun, Mexico), pp. 667-676, Electrochemical Society, 2006.

4

R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, and S. Selberherr, ``A Study of Boron Implantation into High Ge Content SiGe Alloys,'' in SiGe: Materials, Processing, and Devices (ECS Meeting Abstracts on CD-ROM), (Cancun, Mexico), PAPER-ID 1469, 1 page, Electrochemical Society, 2006.

5

R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, and S. Selberherr, ``Monte Carlo Simulation of Boron Implantation into (100) Germanium,'' in Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 381-384, 2006.

6

R. Wittmann, H. Puchner, H. Ceric, and S. Selberherr, ``Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell,'' in Proc. Int. Symp. on Physics and Failure Analysis (IPFA), pp. 41-44, 2006.

7

R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, and S. Selberherr, ``Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET,'' in IEEE Int. Reliability Workshop Final Report (IIRW), pp. 99-102, 2005.

8

R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, and S. Selberherr, ``Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology,'' in Proc. Nanotechnology Conf., pp. 29-32, 2005.

9

R. Wittmann, A. Hössinger, and S. Selberherr, ``Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs,'' in Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 191-194, 2005.

10

R. Wittmann, A. Hössinger, and S. Selberherr, ``Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe,'' in ECS Transactions SiGe: Materials, Processing, and Devices, vol. 2004-07, (Honolulu, USA), pp. 181-192, Electrochemical Society, 2004.

11

R. Wittmann, A. Hössinger, and S. Selberherr, ``Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe,'' in SiGe: Materials, Processing, and Devices, (ECS Meeting Abstracts on CD-ROM), (Honolulu, USA), PAPER-ID 1301, 1 page, Electrochemical Society, 2004.

12

R. Wittmann, A. Hössinger, and S. Selberherr, ``Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys,'' in Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 169-172, 2004.

13

R. Wittmann, A. Hössinger, and S. Selberherr, ``Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation,'' in Proc. 15th European Simulation Symposium (ESS), pp. 35-40, 2003.

14

R. Wittmann, A. Hössinger, and S. Selberherr, ``Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation,'' in Proc. Industrial Simulation Conf. (ISC), pp. 159-163, 2003.