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Publications Tesfaye Ayalew

17 records

Publications in Scientific Journals

5.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum, 483-485 (2005), 845 - 848. https://doi.org/10.4028/www.scientific.net/MSF.483-485.845

4.  T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
"Numerical Analysis of SiC Merged PiN Schottky Diodes";
Materials Science Forum, 483-485 (2005), 949 - 952. https://doi.org/10.4028/www.scientific.net/MSF.483-485.949

3.  S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Materials Science Forum, 483-485 (2005), 793 - 796. https://doi.org/10.4028/www.scientific.net/MSF.483-485.793

2.  T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44 (2004), 9-11; 1473 - 1478. https://doi.org/10.1016/j.microrel.2004.07.042

1.  T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43 (2003), 9-11; 1889 - 1894. https://doi.org/10.1016/S0026-2714(03)00321-4

Talks and Poster Presentations (with Proceedings-Entry)

7.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

6.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 295 - 298. https://doi.org/10.1007/978-3-7091-0624-2_69

5.  S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493.

4.  T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
"Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77.

3.  T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
"SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477.

2.  T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; 552 - 556.

1.  T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 581 - 584.

Talks and Poster Presentations (without Proceedings-Entry)

2.  T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08.

1.  T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10.

Doctor's Theses (authored and supervised)

1.  T. Ayalew:
"SiC Semiconductor Devices Technology, Modeling and Simulation";
Supervisor, Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2004; oral examination: 2004-02-26. https://doi.org/10.34726/hss.2004.04281063

Diploma and Master Theses (authored and supervised)

1.  T. Ayalew:
"Design and Evaluation of Variable Gain Cross-Coupled Controller for Biaxial Positioning System";
Supervisor: A. Weinmann, W. Prechelmacher; E360, 2000.

Scientific Reports

1.  H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr:
"VISTA Status Report June 2004";
2004; 28 pages.