Publications Hajdin Ceric

187 records

Books and Editorships

1.   Ceric, H., Selberherr, S. (2009).
Editorial Preface to the Special Section on Electromigration Published in March 2009.
IEEE Transactions on Device and Materials Reliability, Vol.9 (p. 103). https://doi.org/10.1109/tdmr.2009.2020086 (reposiTUm)

Publications in Scientific Journals

33.   Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., Selberherr, S. (2023).
Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds.
Journal of Applied Physics, 133(10), Article 105101. https://doi.org/10.1063/5.0134692 (reposiTUm)

32.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023).
Microstructural Impact on Electromigration Reliability of Gold Interconnects.
Solid-State Electronics, 200, Article 108528. https://doi.org/10.1016/j.sse.2022.108528 (reposiTUm)

31.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023).
Statistical Study of Electromigration in Gold Interconnects.
Microelectronics Reliability, 147, 1–7. https://doi.org/10.1016/j.microrel.2023.115061 (reposiTUm)

30.   Ceric, H., Selberherr, S., Zahedmanesh, H., de Orio, R. L., Croes, K. (2021).
Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects.
ECS Journal of Solid State Science and Technology, 10(3), 035003. https://doi.org/10.1149/2162-8777/abe7a9 (reposiTUm)

29.   Saleh, A., Ceric, H., Zahedmanesh, H. (2021).
Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model.
Journal of Applied Physics, 129(12), 125102. https://doi.org/10.1063/5.0039953 (reposiTUm)

28.   Ceric, H., Zahedmanesh, H., Croes, K. (2019).
Analysis of Electromigration Failure of Nano-Interconnects Through a Combination of Modeling and Experimental Methods.
Microelectronics Reliability, 100–101(113362), 113362. https://doi.org/10.1016/j.microrel.2019.06.054 (reposiTUm)

27.   Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019).
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-Mis-HEMTs.
Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm)

26.   Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S. (2016).
Stress Evolution During Nanoindentation in Open TSVs.
IEEE Transactions on Device and Materials Reliability, 16(4), 470–474. https://doi.org/10.1109/tdmr.2016.2622727 (reposiTUm)

25.   Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2016).
The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in N- And P-Channel LDMOS Devices.
Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 (reposiTUm)

24.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2015).
Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs.
Microelectronics Reliability, 55(9–10), 1427–1432. https://doi.org/10.1016/j.microrel.2015.06.021 (reposiTUm)

23.   Coppeta, R. A., Holec, D., Ceric, H., Grasser, T. (2015).
Evaluation of Dislocation Energy in Thin Films.
Philosophical Magazine, 95(2), 186–209. https://doi.org/10.1080/14786435.2014.994573 (reposiTUm)

22.   Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015).
Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation.
IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm)

21.   Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
Microelectronics Reliability, 54(9–10), 2133–2137. https://doi.org/10.1016/j.microrel.2014.07.099 (reposiTUm)

20.   Ceric, H., Orio, R., Zisser, W., Selberherr, S. (2014).
Microstructural Impact on Electromigration: A TCAD Study.
Facta Universitatis - Series: Electronics and Energetics, 27(1), 1–11. https://doi.org/10.2298/fuee1401001c (reposiTUm)

19.   Singulani, A. P., Ceric, H., Selberherr, S. (2013).
Stress Evolution in the Metal Layers of TSVs With Bosch Scallops.
Microelectronics Reliability, 53(9–11), 1602–1605. https://doi.org/10.1016/j.microrel.2013.07.132 (reposiTUm)

18.   de Orio, R. L., Ceric, H., Selberherr, S. (2012).
Electromigration Failure in a Copper Dual-Damascene Structure With a Through Silicon Via.
Microelectronics Reliability, 52(9–10), 1981–1986. https://doi.org/10.1016/j.microrel.2012.07.021 (reposiTUm)

17.   Ceric, H., de Orio, R. L., Selberherr, S. (2012).
Interconnect Reliability Dependence on Fast Diffusivity Paths.
Microelectronics Reliability, 52(8), 1532–1538. https://doi.org/10.1016/j.microrel.2011.09.035 (reposiTUm)

16.   de Orio, R. L., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects.
Microelectronics Reliability, 51(9–11), 1573–1577. https://doi.org/10.1016/j.microrel.2011.07.049 (reposiTUm)

15.   Starkov, I., Tyaginov, S., Enichlmair, H., Park, J. M., Ceric, H., Grasser, T. (2011).
Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution From Charge Pumping Measurements.
Solid State Phenomena, 178–179, 267–272. https://doi.org/10.4028/www.scientific.net/ssp.178-179.267 (reposiTUm)

14.   Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, Ch., Park, J. M., Seebacher, E., Orio, R., Ceric, H., Grasser, T. (2011).
An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation.
Microelectronics Reliability, 51(9–11), 1525–1529. https://doi.org/10.1016/j.microrel.2011.07.089 (reposiTUm)

13.   Ceric, H., Selberherr, S. (2011).
Electromigration in Submicron Interconnect Features of Integrated Circuits.
Materials Science and Engineering: R: Reports, 71(5–6), 53–86. https://doi.org/10.1016/j.mser.2010.09.001 (reposiTUm)

12.   Starkov, I., Tyaginov, S., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Ceric, H., Grasser, T. (2011).
Hot-Carrier Degradation Caused Interface State Profile-Simulation Versus Experiment.
Journal of Vacuum Science, Technology B, 29(1), 01AB09. https://doi.org/10.1116/1.3534021 (reposiTUm)

11.   Huang, R., Taylor, A., Himmelsbach, S., Ceric, H., Detzel, T. (2010).
Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams During Rapid Thermal Processing.
Measurement Science and Technology, 21(5), 55702–55710. (reposiTUm)

10.   Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling.
Microelectronics Reliability, 50, 1267–1272. (reposiTUm)

9.  R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability (invited), 50 (2010), 6; 775 - 789. https://doi.org/10.1016/j.microrel.2010.01.007

8.   Huang, R., Robl, W., Ceric, H., Detzel, T., Dehm, G. (2010).
Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing.
IEEE Transactions on Device and Materials Reliability, 10(1), 47–54. https://doi.org/10.1109/tdmr.2009.2032768 (reposiTUm)

7.   Ceric, H., de Orio, R. L., Cervenka, J., Selberherr, S. (2009).
A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects.
IEEE Transactions on Device and Materials Reliability, 9(1), 9–19. https://doi.org/10.1109/tdmr.2008.2000893 (reposiTUm)

6.   De Orio, R. L., Ceric, H., Selberherr, S. (2009).
Analysis of Electromigration in Dual-Damascene Interconnect Structures.
Journal of Integrated Circuits and Systems, 4(2), 67–72. https://doi.org/10.29292/jics.v4i2.300 (reposiTUm)

5.   Lacerda de Orio, R., Ceric, H., Selberherr, S. (2008).
Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures Under Electromigration Stress.
Journal of Computational Electronics, 7(3), 128–131. https://doi.org/10.1007/s10825-008-0211-9 (reposiTUm)

4.   Cervenka, J., Ceric, H., Selberherr, S. (2008).
Three-Dimensional Simulation of Sacrificial Etching.
Microsystem Technologies, 14(4–5), 665–671. https://doi.org/10.1007/s00542-007-0491-1 (reposiTUm)

3.   Movahhedi, M., Abdipour, A., Ceric, H., Sheikholeslami, A., Selberherr, S. (2007).
Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method.
IEEE Microwave and Wireless Components Letters, 17(1), 10–12. https://doi.org/10.1109/lmwc.2006.887240 (reposiTUm)

2.  H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
IEICE Transactions on Electronics (invited), E86-C (2003), 3; 421 - 426.

1.  H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Microelectronics Reliability, 42 (2002), 9-11; 1457 - 1460. https://doi.org/10.1016/S0026-2714(02)00169-5

Contributions to Books

3.   Ceric, H., Zahedmanesh, H., Lacerda de Orio, R., Selberherr, S. (2021).
Models and Techniques for Reliability Studies of Nano-Scaled Interconnects.
In S. Y. Yurish (Ed.), Advances in Measurements and Instrumentation: Reviews (pp. 93–111). International Frequency Sensor Association (IFSA) Publishing. (reposiTUm)

2.   Ceric, H., Heinzl, R., Hollauer, C., Grasser, T., Selberherr, S. (2006).
Microstructure and Stress Aspects of Electromigration Modeling.
In Stress-Induced Phenomena in Metallization (pp. 262–268). American Institute of Physics. (reposiTUm)

1.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress.
In ECS Meeting Abstracts (pp. 734–734). ECS Transactions. https://doi.org/10.1149/ma2005-02/19/734 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

127.   Saleh, A., Zahedmanesh, H., Ceric, H., De Wolf, I., Croes, K. (2023).
Impact of via Geometry and Line Extension on Via-Electromigration in Nano-Interconnects.
In 2023 IEEE International Reliability Physics Symposium (IRPS) Proceedings, Monterey, United States. https://doi.org/10.1109/IRPS48203.2023.10118027 (reposiTUm)

126.   Saleh, A., Zahedmanesh, H., Ceric, H., Croes, K., De Wolf, I. (2022).
Dynamics of Electromigration Voids in Cu Interconnects: Investigation Using a Physics-Based Model Augmented by Neural Networks.
In 2022 IEEE International Interconnect Technology Conference (IITC), San Jose, USA, United States. https://doi.org/10.1109/iitc52079.2022.9881303 (reposiTUm)

125.   Ceric, H., de Orio, R., Selberherr, S. (2022).
Electromigration Degradation of Gold Interconnects: A Statistical Study.
In 2022 IEEE International Interconnect Technology Conference (IITC), San Jose, USA, United States. https://doi.org/10.1109/iitc52079.2022.9881313 (reposiTUm)

124.   Ceric, H., Orio, R., Selberherr, S. (2022).
Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 301–303), Milan, Italy. (reposiTUm)

123.   Ceric, H., de Orio, R., Selberherr, S. (2022).
Microstructural Impact on Electromigration Reliability of Gold Interconnects.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 178–179), Granada, Spain. (reposiTUm)

122.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2022).
Statistical Study of Electromigration in Gold Interconnects.
In 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 1–5), Singapore, Singapore. https://doi.org/10.1109/IPFA55383.2022.9915762 (reposiTUm)

121.   Ceric, H., Zahedmanesh, H. (2019).
Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability.
In Proceedings of the International Interconnect Technology Conference (IITC), San Jose, USA. (reposiTUm)

120.   Ceric, H., Selberherr, S., Zahedmanesh, H., Orio, R., Croes, K. (2019).
Assessment of Electromigration in Nano‐Interconnects.
In Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP) (p. 7), San Jose, USA. (reposiTUm)

119.   Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017).
Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm)

118.   Papaleo, S., Ceric, H. (2016).
A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574626 (reposiTUm)

117.   Rovitto, M., Ceric, H. (2016).
Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA. https://doi.org/10.1109/ectc.2016.49 (reposiTUm)

116.   Papaleo, S., Rovitto, M., Ceric, H. (2016).
Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA. https://doi.org/10.1109/ectc.2016.19 (reposiTUm)

115.   Ceric, H., Orio, R., Rovitto, M. (2016).
TCAD Approach for the Assessment of Interconnect Reliability.
In Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP) (p. T21), Bad Schandau, Germany. (reposiTUm)

114.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063763 (reposiTUm)

113.   Rovitto, M., Zisser, W., Ceric, H. (2015).
Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs.
In Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. (reposiTUm)

112.   Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T. (2015).
Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2015.7437064 (reposiTUm)

111.   Ceric, H., Selberherr, S. (2015).
Compact Model for Solder Bump Electromigration Failure.
In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France. https://doi.org/10.1109/iitc-mam.2015.7325651 (reposiTUm)

110.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs.
In Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 60), Maastricht. (reposiTUm)

109.   Papaleo, S., Zisser, W., Ceric, H. (2015).
Effects of the Initial Stress at the Bottom of Open TSVs.
In Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. (reposiTUm)

108.   Rovitto, M., Zisser, W., Ceric, H., Grasser, T. (2015).
Electromigration Modelling of Void Nucleation in Open Cu-TSVs.
In 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Ghent, Belgium. https://doi.org/10.1109/eurosime.2015.7103100 (reposiTUm)

107.   Papaleo, S., Zisser, W., Ceric, H. (2015).
Factors That Influence Delamination at the Bottom of Open TSVs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292350 (reposiTUm)

106.   Ceric, H., Rovitto, M. (2015).
Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292292 (reposiTUm)

105.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices.
In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm)

104.   Ceric, H., Orio, R., Singulani, A., Selberherr, S. (2014).
3D Technology Interconnect Reliability TCAD.
In Proceedings of the 2014 Pan Pacific Microelectronics Symposium (pp. 1–8), Big Island of Hawaii, USA. (reposiTUm)

103.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Kaczer, B., Ceric, H., Grasser, T. (2014).
Dominant Mechanisms of Hot-Carrier Degradation in Short- And Long-Channel Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049512 (reposiTUm)

102.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 48), Maastricht. (reposiTUm)

101.   Ceric, H., Zisser, W., Rovitto, M., Selberherr, S. (2014).
Electromigration in Solder Bumps: A Mean-Time-To-Failure TCAD Study.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931603 (reposiTUm)

100.   Ceric, H., Selberherr, S. (2014).
Electromigration Induced Failure of Solder Bumps and the Role of IMC.
In IEEE International Interconnect Technology Conference, San Jose, USA. https://doi.org/10.1109/iitc.2014.6831891 (reposiTUm)

99.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Induced Resistance Increase in Open TSVs.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931610 (reposiTUm)

98.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898179 (reposiTUm)

97.   Ceric, H., Selberherr, S. (2014).
Electromigration Reliability of Solder Bumps.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898145 (reposiTUm)

96.   de Orio, R., Gousseau, S., Moreau, S., Cerice, H., Selberherr, S., Farcy, A., Bay, F., Inal, K., Montmitonnet, P. (2014).
On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049523 (reposiTUm)

95.   Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Minixhofer, R., Ceric, H., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049511 (reposiTUm)

94.   Ceric, H., Zisser, W., Selberherr, S. (2014).
Quantum Mechanical Calculations of Electromigration Characteristics.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 16), Kyoto, Japan. (reposiTUm)

93.   Papaleo, S., Zisser, W., Singulani, A., Ceric, H., Selberherr, S. (2014).
Stress Analysis in Open TSVs After Nanoindentation.
In Abstracts (pp. 39–40), Thun, Switzerland. (reposiTUm)

92.   Zisser, W., Ceric, H., Selberherr, S. (2014).
Stress Development and Void Evolution in Open TSVs.
In Abstracts (pp. 38–39), Thun, Switzerland. (reposiTUm)

91.   Papaleo, S., Zisser, W., Singulani, A., Ceric, H., Selberherr, S. (2014).
Stress Evolution During the Nanoindentation in Open TSVs.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 44), Kyoto, Japan. (reposiTUm)

90.   Zisser, W., Ceric, H., Selberherr, S. (2014).
Void Evolution in Open TSVs.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 58), Kyoto, Japan. (reposiTUm)

89.   Ceric, H., de Orio, R., Selberherr, S. (2013).
Analysis of Solder Bump Electromigration Reliability.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599258 (reposiTUm)

88.   Coppeta, R., Ceric, H., Holec, D., Grasser, T. (2013).
Critical Thickness for GaN Thin Film on AlN Substrate.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 133–136), S. Lake Tahoe. (reposiTUm)

87.   Singulani, A., Ceric, H., Langer, E., Carniello, S. (2013).
Effects of Bosch Scallops on Metal Layer Stress of an Open Through Silicon via Technology.
In 2013 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2013.6532066 (reposiTUm)

86.   Zisser, W., Ceric, H., de Orio, R., Selberherr, S. (2013).
Electromigration Analyses of Open TSVs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650620 (reposiTUm)

85.   Ceric, H., Singulani, A., de Orio, R., Selberherr, S. (2013).
Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps.
In 2013 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe. https://doi.org/10.1109/iirw.2013.6804185 (reposiTUm)

84.   Zisser, W., Ceric, H., de Orio, R., Selberherr, S. (2013).
Electromigration Induced Stress in Open TSVs.
In 2013 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe. https://doi.org/10.1109/iirw.2013.6804179 (reposiTUm)

83.   Coppeta, R., Ceric, H., Karunamurthy, B., Grasser, T. (2013).
Epitaxial Volmer-Weber Growth Modelling.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650570 (reposiTUm)

82.   Singulani, A., Ceric, H., Filipovic, L., Langer, E. (2013).
Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon via Technology.
In 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Poland. https://doi.org/10.1109/eurosime.2013.6529938 (reposiTUm)

81.   Ceric, H., Singulani, A., de Orio, R., Selberherr, S. (2013).
Impact of Intermetallic Compound on Solder Bump Electromigration Reliability.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650577 (reposiTUm)

80.   de Orio, R., Ceric, H., Selberherr, S. (2013).
Influence of Temperature on the Standard Deviation of Electromigration Lifetimes.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650617 (reposiTUm)

79.   Singulani, A., Ceric, H., Selberherr, S. (2013).
Stress Estimation in Open Tungsten TSV.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650575 (reposiTUm)

78.   Singulani, A., Ceric, H., Langer, E. (2013).
Stress Evolution on Tungsten Thin-Film of an Open Through Silicon via Technology.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599155 (reposiTUm)

77.   Singulani, A., Ceric, H., Langer, E. (2013).
Stress Reduction Induced by Bosch Scallops on an Open TSV Technology.
In 2013 IEEE International Interconnect Technology Conference - IITC, San Jose, USA. https://doi.org/10.1109/iitc.2013.6615578 (reposiTUm)

76.   Ceric, H., De Orio, R., Zisser, W., Selberherr, S. (2012).
Ab Initio Method for Electromigration Analysis.
In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore. https://doi.org/10.1109/ipfa.2012.6306306 (reposiTUm)

75.   de Orio, R., Ceric, H., Selberherr, S. (2012).
Analysis of Resistance Change Development Due to Voiding in Copper Interconnects Ended by a Through Silicon Via.
In ECS Transactions (pp. 273–280), Brasilia, Brazil. https://doi.org/10.1149/04901.0273ecst (reposiTUm)

74.   Ceric, H., Orio, R., Selberherr, S. (2012).
Atomistic Method for Analysis of Electromigration.
In Proceedings of the IEEE International Interconnect Technology Conference (p. 3), San Jose, USA. (reposiTUm)

73.   Orio, R., Ceric, H., Selberherr, S. (2012).
Electromigration Failure in a Copper Dual-Damascene Structure With a Through Silicon Via.
In Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1981–1986), Cagliari, Italy. (reposiTUm)

72.   Orio, R., Ceric, H., Selberherr, S. (2012).
Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects With Through Silicon Vias.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 268–271), Denver, Colorado, United States. (reposiTUm)

71.   Ceric, H., Orio, R., Zisser, W., Schnitzer, V., Selberherr, S. (2012).
Modeling of Microstructural Effects on Electromigration Failure.
In Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics (pp. 50–51), Kyoto, Japan. (reposiTUm)

70.   Ceric, H., Orio, R., Selberherr, S. (2012).
TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 264–267), Denver, Colorado, United States. (reposiTUm)

69.   Singulani, A., Ceric, H., Selberherr, S. (2012).
Thermo-Mechanical Simulations of an Open Tungsten TSV.
In 2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), Singapore. https://doi.org/10.1109/eptc.2012.6507061 (reposiTUm)

68.   de Orio, R., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Lifetime Estimation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035040 (reposiTUm)

67.   Filipovic, L., Ceric, H., Cervenka, J., Selberherr, S. (2011).
A Simulator for Local Anodic Oxidation of Silicon Surfaces.
In 2011 24th Canadian Conference on Electrical and Computer Engineering(CCECE), Saskatoon, SK, Canada. https://doi.org/10.1109/ccece.2011.6030543 (reposiTUm)

66.   Starkov, I., Tyaginov, S., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2011).
Accurate Extraction of MOSFET Interface State Spatial Distribution From Charge Pumping Measurements.
In GADEST 2011: Abstract Booklet (pp. 105–106), Loipersdorf, Austria, Austria. (reposiTUm)

65.   Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, C., Park, J., Seebacher, E., Orio, R., Ceric, H., Grasser, T. (2011).
An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation.
In Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1525–1529), Bordeaux, France. (reposiTUm)

64.   Starkov, I., Starkov, A., Tyaginov, S., Enichlmair, H., Ceric, H., Grasser, T. (2011).
An Analytical Model for MOSFET Local Oxide Capacitance.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

63.   Starkov, I., Ceric, H., Tyaginov, S., Grasser, T. (2011).
Analysis of Worst-Case Hot-Carrier Conditions for N-Type MOSFET.
In 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics, Madonna di Campiglio, Italy. https://doi.org/10.1109/prime.2011.5966251 (reposiTUm)

62.   Starkov, I., Ceric, H., Tyaginov, S., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011).
Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of N- And P-Channel High-Voltage MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035066 (reposiTUm)

61.   Starkov, I., Ceric, H. (2011).
Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress.
In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (pp. 90–91), Nagoya, Japan. (reposiTUm)

60.   Ceric, H., de Orio, R., Selberherr, S. (2011).
Integration of Atomistic and Continuum-Level Electromigration Models.
In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2011.5992749 (reposiTUm)

59.   Ceric, H., Orio, R., Selberherr, S. (2011).
Interconnect Reliability Dependence on Fast Diffusivity Paths.
In Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011) (p. 33), Suntec, Singapore. (reposiTUm)

58.   De Orio, R., Ceric, H., Selberherr, S. (2011).
Modeling Electromigration Lifetimes of Copper Interconnects.
In ECS Transactions (pp. 163–169), Ouro Preto. https://doi.org/10.1149/1.3615190 (reposiTUm)

57.   Ceric, H., de Orio, R., Schanovsky, F., Zisser, W., Selberherr, S. (2011).
Multilevel Simulation for the Investigation of Fast Diffusivity Paths.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035068 (reposiTUm)

56.   Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011).
Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage N-Mosfet.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035065 (reposiTUm)

55.   Starkov, I., Tyaginov, S., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 139–144), Singapore. (reposiTUm)

54.   Huang, R., Robl, W., Dehm, G., Ceric, H., Detzel, T. (2010).
Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 1–6), Singapore. (reposiTUm)

53.   Ceric, H., Orio, R., Selberherr, S. (2010).
Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 167–170), Singapore. (reposiTUm)

52.   Starkov, I., Tyaginov, S., Enichlmair, H., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Ceric, H., Grasser, T. (2010).
HC Degradation Model: Interface State Profile-Simulations vs. Experiment.
In Book of Abstracts (p. 128), Catania. (reposiTUm)

51.   Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 341–345), Singapore. (reposiTUm)

50.   Ceric, H., de Orio, R., Selberherr, S. (2010).
Impact of Parameter Variability on Electromigration Lifetime Distribution.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604523 (reposiTUm)

49.   Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling.
In Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 3), Maastricht. (reposiTUm)

48.   Huang, R., Robl, W., Detzel, T., Ceric, H. (2010).
Modeling of Stress Evolution of Electroplated Cu Films During Self-Annealing.
In Proceedings of the IEEE International Reliability Physics Symposium (pp. 911–917), Anaheim, USA. (reposiTUm)

47.   Ceric, H., de Orio, R., Cervenka, J., Selberherr, S. (2009).
Copper Microstructure Impact on Evolution of Electromigration Induced Voids.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290222 (reposiTUm)

46.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
Electromigration Failure Development in Modern Dual-Damascene Interconnects.
In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 5), Florianopolis. (reposiTUm)

45.   de Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290219 (reposiTUm)

44.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on Electromigration Induced Voids.
In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 694–697), Singapore. (reposiTUm)

43.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on Electromigration-Induced Failure Development.
In ECS Transactions (pp. 345–352), Ouro Preto. (reposiTUm)

42.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on the Electromigration Lifetime Distribution.
In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009) (pp. 731–734), Singapore. (reposiTUm)

41.   Orio, R., Carniello, S., Ceric, H., Selberherr, S. (2008).
Analysis of Electromigration in Dual-Damascene Interconnect Structures.
In ECS Transactions (pp. 337–348), Ouro Preto. (reposiTUm)

40.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Analysis of Microstructure Impact on Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 241 - 244. https://doi.org/10.1109/SISPAD.2008.4648282

39.   Lacerda de Orio, R., Ceric, H. (2008).
Analysis of Electromigration in Redundant Vias.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648281 (reposiTUm)

38.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2008).
Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms.
In 2008 26th International Conference on Microelectronics, Beograd. https://doi.org/10.1109/icmel.2008.4559225 (reposiTUm)

37.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2008).
Stress-Induced Anisotropy of Electromigration in Copper Interconnects.
In Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop (pp. 56–62), Dresden. (reposiTUm)

36.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2008).
TCAD Solutions for Submicron Copper Interconnect.
In Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 78–81), Singapore. (reposiTUm)

35.   Orio, R., Ceric, H., Selberherr, S. (2007).
Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures Under Electromigration Stress.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 62–63), Urbana-Champaign, IL, USA. (reposiTUm)

34.   Ceric, H., Selberherr, S. (2007).
Electromigration Modeling for Interconnect Structures in Microelectronics.
In ECS Transactions (pp. 295–304), Ouro Preto. (reposiTUm)

33.   Ceric, H., Selberherr, S. (2007).
Electromigration in Interconnect Structures of Microelectronic Circuits.
In Microelectronics, Electronics, and Electronic Technologies (MEET) (pp. 23–28), Opatija. (reposiTUm)

32.   Ceric, H., Nentchev, A., Langer, E., Selberherr, S. (2007).
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 37–40), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_9 (reposiTUm)

31.   Hollauer, C., Ceric, H., van Barel, G., Witvrouw, A., Selberherr, S. (2007).
Investigation of Intrinsic Stress Effects in Cantilever Structures.
In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM) (p. 4), Bangkok, Thailand. (reposiTUm)

30.   Ceric, H., Langer, E., Selberherr, S. (2007).
Modeling of Residual Stresses in Thin Metal Films.
In 9th International Workshop on Stress-Induced Phenomena in Metallization (p. 18), Dresden. (reposiTUm)

29.   Orio, R., Ceric, H., Selberherr, S. (2007).
Strain-Induced Anisotropy of Electromigration in Copper Interconnect.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

28.   Cervenka, J., Ceric, H., Ertl, O., Selberherr, S. (2007).
Three-Dimensional Sacrificial Etching.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 433–436), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_105 (reposiTUm)

27.   Cervenka, J., Ceric, H., Selberherr, S. (2007).
Three-Dimensional Simulation of Sacrificial Etching.
In Smart Sensors, Actuators, and MEMS III (pp. 452–460), Gran Canaria, Spain. https://doi.org/10.1117/12.721979 (reposiTUm)

26.   Ceric, H., Langer, E., Selberherr, S. (2007).
Three-Phase Model for the Volmer-Weber Crystal Growth.
In Nanostructures and Carrier Interactions (p. 127), Atsugi, Japan. (reposiTUm)

25.   Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., Selberherr, S. (2006).
A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method.
In European Microwave Week 2006 Book of Abstracts (pp. 1–4), Manchester. (reposiTUm)

24.   Wittmann, R., Puchner, H., Ceric, H., Selberherr, S. (2006).
Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 41–44), Singapore. (reposiTUm)

23.   Hollauer, C., Ceric, H., Selberherr, S. (2006).
Modeling of Intrinsic Stress Effects in Deposited Thin Films.
In Eurosensors 20th Anniversary Vol. 1 (pp. 324–325), Göteborg, Sweden. (reposiTUm)

22.   Ceric, H., Cervenka, J., Langer, E., Selberherr, S. (2006).
Moving Boundary Applications in Process and Interconnect TCAD.
In Proceedings Mini-Workshop on Anisotropic Motion Laws (pp. 13–16), Oberwolfach. (reposiTUm)

21.   Ceric, H., Hollauer, C., Selberherr, S. (2006).
Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 359–363), Singapore. (reposiTUm)

20.   Ceric, H., Hollauer, C., Selberherr, S. (2006).
Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282869 (reposiTUm)

19.   Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S. (2006).
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157), Singapore. (reposiTUm)

18.   Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., Selberherr, S. (2005).
Comprehensive Analysis of Vacancy Dynamics Due to Electromigration.
In Proceedings of the 12th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 100–103), Singapore. (reposiTUm)

17.   Wessner, W., Ceric, H., Cervenka, J., Selberherr, S. (2005).
Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201494 (reposiTUm)

16.   Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S. (2005).
Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm P-Mosfet.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 99–102), S. Lake Tahoe. (reposiTUm)

15.   Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., Selberherr, S. (2005).
Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts.
In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640), Wien, Austria. (reposiTUm)

14.   Ceric, H., Hollauer, C., Selberherr, S. (2005).
Microstructure and Stress Aspects of Electromigration Modeling.
In 8th International Workshop on Stress-Induced Phenomena in Metallization (p. P 17), Dresden. (reposiTUm)

13.   Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S. (2005).
Simulation of Dynamic NBTI Degradation for a 90 Nm CMOS Technology.
In NSTI Nanotech Technical Proceedings (pp. 29–32), Anaheim, Austria. (reposiTUm)

12.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Stress Dependent Thermal Oxidation.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201503 (reposiTUm)

11.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress.
In 208th ECS Meeting (p. 1), Los Angeles. (reposiTUm)

10.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., Selberherr, S. (2005).
Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis.
In NSTI Nanotech Technical Proceedings (pp. 620–623), Anaheim, Austria. (reposiTUm)

9.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S. (2005).
Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress.
In VLSI Circuits and Systems II (pp. 380–387), Sevilla, Spain. https://doi.org/10.1117/12.608414 (reposiTUm)

8.  H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 331 - 334. https://doi.org/10.1007/978-3-7091-0624-2_78

7.  W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 41 - 46.

6.  H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
"Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; 139 - 145.

5.  Ch. Hollauer, H. Ceric, S. Selberherr:
"Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 383 - 386.

4.  Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; 154 - 158.

3.  T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
"A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 183 - 186. https://doi.org/10.1109/SISPAD.2002.1034547

2.  H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 253 - 256. https://doi.org/10.1109/SISPAD.2002.1034566

1.  H. Ceric, S. Selberherr:
"Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2002-07-08 - 2002-07-12; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9; 140 - 144.

Talks and Poster Presentations (without Proceedings-Entry)

8.   Ceric, H., Zahedmanesh, H., Croes, K. (2019).
Analysis of Electromigration Failure of Nano-Interconnects Through a Combination of Modeling and Experimental Methods.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

7.   Singulani, A. P., Ceric, H., Selberherr, S. (2013).
Stress Evolution in the Metal Layers of TSVs With Bosch Scallops.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

6.   Orio, R., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects.
22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, EU. (reposiTUm)

5.   Rupp, K., Ceric, H. (2010).
Analytical and Numerical Investigation of the Segregation Problem.
4th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo, EU. (reposiTUm)

4.   Cervenka, J., Ceric, H., Selberherr, S. (2007).
Three-Dimensional Simulation of Sacrificial Etching.
SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain, EU. (reposiTUm)

3.   Wessner, W., Ceric, H., Hollauer, C., Langer, E., Selberherr, S. (2005).
Electromigration Reliability TCAD Solutions.
SEMICON Europa2005, München, Austria. (reposiTUm)

2.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S. (2005).
Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress.
SPIE VLSI Circuits and Systems, Sevilla, Spain, Austria. (reposiTUm)

1.   Ceric, H., Selberherr, S. (2002).
Simulative Prediction of the Resistance Change Due to Electromigration Induced Void Evolution.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

Habilitation Theses

1.   Ceric, H. (2014).
Reliability of Interconnect Structures for Modern Integrated Circuits
Technische Universität Wien. (reposiTUm)

Doctor's Theses (authored and supervised)

5.   Zisser, W. H. (2016).
Electromigration in Interconnect Structures
Technische Universität Wien. https://doi.org/10.34726/hss.2016.37905 (reposiTUm)

4.   Rovitto, M. (2016).
Electromigration Reliability Issue in Interconnects for Three-Dimensional Integration Technologies
Technische Universität Wien. https://doi.org/10.34726/hss.2016.41221 (reposiTUm)

3.   Papaleo, S. (2016).
Mechanical Reliability of Open Through Silicon via Structures for Integrated Circuits
Technische Universität Wien. https://doi.org/10.34726/hss.2016.41167 (reposiTUm)

2.   Pires Singulani, A. (2014).
Advanced Methods for Mechanical Analysis and Simulation of Through Silicon Vias
Technische Universität Wien. https://doi.org/10.34726/hss.2014.24806 (reposiTUm)

1.  H. Ceric:
"Numerical Techniques in Modern TCAD";
Supervisor, Reviewer: S. Selberherr, H. Haas; Institut für Mikroelektronik, 2005; oral examination: 2005-04-29. https://doi.org/10.34726/hss.2005.3221

Diploma and Master Theses (authored and supervised)

3.   Zisser, W. H. (2011).
Untersuchung an Kupferkristallen Unter Zuhilfenahme Von MD Simulationen
Technische Universität Wien. (reposiTUm)

2.  H. Ceric:
"Analyse von WDM-LAN Zugriffsprotokollen unter Zuhilfenahme von Semi-Markov-Modellen";
Supervisor: K. Bengi, H.R. van As; E 388, 2000.

1.   Ceric, H. (2000).
Analytical Modeling of WDM LAN Medium Access Protocols by Means of Semi-Markov Processes
Technische Universität Wien. (reposiTUm)

Scientific Reports

6.   Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., Selberherr, S. (2009).
VISTA Status Report June 2009.
(reposiTUm)

5.   Ceric, H., Grasser, T., Orio, R., Pourfath, M., Vasicek, M., Selberherr, S. (2008).
VISTA Status Report July 2008.
(reposiTUm)

4.   Ceric, H., Dhar, S., Karlowatz, G., Li, L., Pourfath, M., Selberherr, S. (2007).
VISTA Status Report June 2007.
(reposiTUm)

3.   Ceric, H., Karner, M., Nentchev, A., Schwaha, P., Ungersböck, S. E., Selberherr, S. (2005).
VISTA Status Report December 2005.
(reposiTUm)

2.   Ceric, H., Holzer, S., Sheikholeslami, A., Ayalew, T., Wittmann, R., Selberherr, S. (2004).
VISTA Status Report June 2004.
(reposiTUm)

1.   Ceric, H., Dragosits, K., Gehring, A., Smirnov, S., Palankovski, V., Selberherr, S. (2002).
VISTA Status Report December 2002.
(reposiTUm)