Publications Siddhartha Dhar
22 records
| 7. | V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX |
| 6. | E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr: "The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon"; Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004. BibTeX |
| 5. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass"; IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533. BibTeX |
| 4. | E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0. BibTeX |
| 3. | E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr: "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon"; IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX |
| 2. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "High-Field Electron Mobility Model for Strained-Silicon Devices"; IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX |
| 1. | S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Electron Mobility Model for Strained-Si Devices"; IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788. BibTeX |
| 11. | V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 10. | S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski: "Monte Carlo Simulation of the Electron Mobility in Strained Silicon"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2006-09-20 - 2006-09-22; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 169 - 173. BibTeX |
| 9. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Analytical Modeling of Electron Mobility in Strained Germanium"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833. BibTeX |
| 8. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154. BibTeX |
| 7. | E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142. BibTeX |
| 6. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "A Tensorial High-Field Electron Mobility Model for Strained Silicon"; Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73. BibTeX |
| 5. | S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr: "Modeling of Velocity-Field Characteristics in Strained Silicon"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol.Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063. BibTeX |
| 4. | S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina: "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 223 - 226 doi:10.1109/SISPAD.2005.201513. BibTeX |
| 3. | S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "A Physically-Based Electron Mobility Model for Strained Si Devices"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16. BibTeX |
| 2. | V. Palankovski, S. Dhar, H. Kosina, S. Selberherr: "Improved Carrier Transport in Strained Si/Ge Devices"; Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX |
| 1. | S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Modeling of Electron Mobility in Strained Si Devices"; Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126. BibTeX |
| 1. | S. Dhar: "Analytical Mobility Models for Strained Silicon-Based Devices"; Reviewer: H. Kosina, G. Magerl; Institut für Mikroelektronik, 2007, oral examination: 2007-08-30. BibTeX |
| 3. | H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr: "VISTA Status Report I"; (2007), 29 page(s) . BibTeX |
| 2. | D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina: "Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits"; (2007), 107 page(s) . BibTeX |
| 1. | S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr: "VISTA Status Report I"; (2006), 32 page(s) . BibTeX |