Staff Person Publications
  •  Intranet
t3kitt3kitt3kit
  • Home
  • TeachingOpen
    • Lehrveranstaltungen
    • Bachelorarbeiten
    • Masterarbeiten
    • Dissertationen
  • ResearchOpen
    • Activities
    • Computing Infrastructure
    • Characterization Lab
    • Annual Reviews
    • Public Projects
    • Conferences
  • PublicationsOpen
    • Books and Book Editorships
    • Papers in Journals
    • Contributions to Books
    • Conference Presentations
    • Scientific Reports
    • Patents
    • Habilitation Theses
    • PhD Theses
    • Master's Theses
  • SoftwareOpen
    • Software
    • Download
    • License Agreement
  • StaffOpen
    • Active Staff
    • Former Staff
  • About UsOpen
    • Contact Us
    • Join Us
    • Partners
    • Imprint
    • Corporate Design
    • Sitemap
  • News

Publications Siddhartha Dhar

22 records


Publications in Scientific Journals


7. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX

6. E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr:
"The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon";
Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004. BibTeX

5. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533. BibTeX

4. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0. BibTeX

3. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
"The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX

2. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX

1. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


11. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX

10. S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski:
"Monte Carlo Simulation of the Electron Mobility in Strained Silicon";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2006-09-20 - 2006-09-22; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 169 - 173. BibTeX

9. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833. BibTeX

8. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154. BibTeX

7. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142. BibTeX

6. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73. BibTeX

5. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr:
"Modeling of Velocity-Field Characteristics in Strained Silicon";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063. BibTeX

4. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina:
"Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 223 - 226 doi:10.1109/SISPAD.2005.201513. BibTeX

3. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"A Physically-Based Electron Mobility Model for Strained Si Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16. BibTeX

2. V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX

1. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126. BibTeX


Doctor's Theses (authored and supervised)


1. S. Dhar:
"Analytical Mobility Models for Strained Silicon-Based Devices";
Reviewer: H. Kosina, G. Magerl; Institut für Mikroelektronik, 2007, oral examination: 2007-08-30. BibTeX


Scientific Reports


3. H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr:
"VISTA Status Report I";
(2007), 29 page(s) . BibTeX

2. D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina:
"Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits";
(2007), 107 page(s) . BibTeX

1. S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr:
"VISTA Status Report I";
(2006), 32 page(s) . BibTeX

  • Active Staff
  • Former Staff

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
Contact Us    |    Join Us    |    Imprint
© E360 - Institute for Microelectronics 2018