Publications Gesualdo Donnarumma
4 recordsContributions to Books
| 1. | Palankovski, V., Donnarumma, G., Kuzmik, J. (2012). Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation. In R. Garg, K. Shenai (Eds.), ECS Transactions (pp. 223–228). ECS Transactions. https://doi.org/10.1149/05003.0223ecst (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
| 3. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012). Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs. In Proceedings of the 18th International Conference in the Series of the Solid State Workshops (pp. 190–194), High Tatras, Slovakia. (reposiTUm) | |
| 2. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012). Electrothermal Analysis of In<inf>0.12</Inf>Al<inf>0.88</Inf>N/GaN HEMTs. In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice Castle, Slovakia. https://doi.org/10.1109/asdam.2012.6418556 (reposiTUm) | |
| 1. | Donnarumma, G., Palankovski, V., Selberherr, S. (2012). Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4h-SiC P-I-N Diode. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 125–128), Denver, Colorado, United States. (reposiTUm) | |