Publications Simone Fiorentini
92 recordsPublications in Scientific Journals
| 24. | Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024). Micromagnetic Modeling of SOT-MRAM Dynamics. PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 (reposiTUm) | |
| 23. | Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 (reposiTUm) | |
| 22. | Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. ECS Transactions, 111(1), 181–186. https://doi.org/10.1149/11101.0181ecst (reposiTUm) | |
| 21. | Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices. Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 (reposiTUm) | |
| 20. | Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm) | |
| 19. | Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2022). Double Reference Layer STT-MRAM Structures With Improved Performance. Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 (reposiTUm) | |
| 18. | Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., Sverdlov, V. (2022). Finite Element Method for MRAM Switching Simulations. WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 (reposiTUm) | |
| 17. | Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 (reposiTUm) | |
| 16. | Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). Interface Effects in Ultra-Scaled MRAM Cells. Solid-State Electronics, 194(108373), 108373. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm) | |
| 15. | Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022). Reinforcement Learning to Reduce Failures in SOT-MRAM Switching. Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 (reposiTUm) | |
| 14. | Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 (reposiTUm) | |
| 13. | Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm) | |
| 12. | Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., Sverdlov, V. (2022). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 (reposiTUm) | |
| 11. | Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm) | |
| 10. | Fiorentini, S., Ender, J., Selberherr, S., de Orio, R. L., Goes, W., Sverdlov, V. (2021). Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions. Solid-State Electronics, 186(108103), 108103. https://doi.org/10.1016/j.sse.2021.108103 (reposiTUm) | |
| 9. | Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., Selberherr, S. (2021). Emerging CMOS Compatible Magnetic Memories and Logic. IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 (reposiTUm) | |
| 8. | Ender, J., de Orio, R. L., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. Microelectronics Reliability, 126(114231), 114231. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm) | |
| 7. | Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm) | |
| 6. | de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell. IEEE Journal of the Electron Devices Society, 9, 61–67. https://doi.org/10.1109/jeds.2020.3039544 (reposiTUm) | |
| 5. | de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning. Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 (reposiTUm) | |
| 4. | de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations. Solid-State Electronics, 185(108075), 108075. https://doi.org/10.1016/j.sse.2021.108075 (reposiTUm) | |
| 3. | Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM. IEEE Journal of the Electron Devices Society, 8, 1249–1256. https://doi.org/10.1109/jeds.2020.3023577 (reposiTUm) | |
| 2. | de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020). Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM. Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 (reposiTUm) | |
| 1. | de Orio, R. L., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020). Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM With a Symmetric Square Free Layer. Physica B: Condensed Matter, 578(411743), 411743. https://doi.org/10.1016/j.physb.2019.411743 (reposiTUm) | |
Contributions to Books
| 1. | Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM. In J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (Eds.), ECS Transactions (pp. 159–164). ECS Transactions. https://doi.org/10.1149/09705.0159ecst (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
| 64. | Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm) | |
| 63. | Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (p. 1), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331859mtgabs (reposiTUm) | |
| 62. | Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023). Back-Hopping in Ultra-Scaled MRAM Cells. In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm) | |
| 61. | Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm) | |
| 60. | Pruckner, B., Fiorentini, S., Goes, W., Sverdlov, V. (2023). Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 59. | Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). Micromagnetic Modeling of SOT-MRAM Dynamics. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 58. | Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023). Multi-Level Operation in Ultra-Scaled MRAM. In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm) | |
| 57. | Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 56. | Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Switching Composite Free Layers in Ultra-Scaled MRAM Cells. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm) | |
| 55. | Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023). Switching Performance of Mo-Based pMTJ and dsMTJ Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm) | |
| 54. | Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V. (2022). About the Switching Energy of a Magnetic Tunnel Junction Determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy. In 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico, Mexico. https://doi.org/10.1109/laedc54796.2022.9908222 (reposiTUm) | |
| 53. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Devices for Digital Spintronics. In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm) | |
| 52. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Magneto-Resistive Memory. In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm) | |
| 51. | Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022). Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches. In Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, Zvenigorod, Russian Federation. https://doi.org/10.1117/12.2624595 (reposiTUm) | |
| 50. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2022). Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12), Granada, Spain. (reposiTUm) | |
| 49. | Fiorentini, S., Loch, W., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S. (2022). Design Analysis of Ultra-Scaled MRAM Cells. In Proceedings of 2022 IEEE 16th International Conference on Solid-State, Integrated Circuit Technology (ICSICT), Nanjing, China, China. (reposiTUm) | |
| 48. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022). Emerging Devices for Digital Spintronics. In 2nd Global Conference, Expo on Nanotechnology, Nanoscience (pp. 32–33), online, INT. (reposiTUm) | |
| 47. | Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022). Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm) | |
| 46. | Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm) | |
| 45. | Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022). Interface Effects in Ultra-Scaled MRAM Cells. In Letters from the 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2022 (p. 108373), Udine, Italy. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm) | |
| 44. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S. (2022). Modeling Advanced Magnetoresistive Memory: A Journey From Finite Element Methods to Machine Learning Approaches. In 2nd Global Webinar on Nanoscience, Nanotechnology, online, INT. (reposiTUm) | |
| 43. | Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm) | |
| 42. | Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022). Modeling Approach to Ultra-Scaled MRAM Cells. In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen. (reposiTUm) | |
| 41. | Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022). Modeling Interfacial and Bulk Spin-Orbit Torques. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm) | |
| 40. | Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022). Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach. In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm) | |
| 39. | Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin Torques in ULTRA-Scaled MRAM Devices. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351), Milan, Italy. (reposiTUm) | |
| 38. | Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. In The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II (pp. 40–44), online, INT. (reposiTUm) | |
| 37. | Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torques in Ultra-Scaled MRAM Cells. In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132), Opatija, Croatia. (reposiTUm) | |
| 36. | Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022). Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm) | |
| 35. | Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2021). Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches. In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod. (reposiTUm) | |
| 34. | Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 45–46). (reposiTUm) | |
| 33. | Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration. In Proceedings of the Trends in Magnetism Conference (TMAG), Cefalù, Italy. (reposiTUm) | |
| 32. | Jørstad, N., Fiorentini, S., Goes, W., Sverdlov, V. (2021). Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM. In Proceedings of the 14th International MOS-AK Workshop (p. 1), Silicon Valley, USA, United States. (reposiTUm) | |
| 31. | Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021). Finite Element Method Approach to MRAM Modeling. In 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro52101.2021.9597194 (reposiTUm) | |
| 30. | Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. In Microelectronics Reliability (p. 114231), Maastricht. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm) | |
| 29. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Reinforcement Learning Approach for Deterministic SOT-MRAM Switching. In Spintronics XIV (pp. 1180519-1–1180519-8), San Diego, United States. https://doi.org/10.1117/12.2593937 (reposiTUm) | |
| 28. | Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching. In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592561 (reposiTUm) | |
| 27. | Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Reinforcement Learning to Reduce Failures in SOT-MRAM Switching. In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa53173.2021.9617362 (reposiTUm) | |
| 26. | Ender, J., Fiorentini, S., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2021). Reinforcement Learning Approach for Deterministic SOT-MRAM Switching. In Spintronics XIV, San Diego, CA, USA. https://doi.org/10.1117/12.2593937 (reposiTUm) | |
| 25. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021). Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 51–52). (reposiTUm) | |
| 24. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021). Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions. In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592559 (reposiTUm) | |
| 23. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2021). Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices. In WINDS Book of Abstracts (pp. 12–13), Kona. (reposiTUm) | |
| 22. | Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021). Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, San Francisco, CA, USA. https://doi.org/10.21203/rs.3.rs-1915307/v1 (reposiTUm) | |
| 21. | Hadamek, T., Bendra, M., Fiorentini, S., Ender, J., de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021). Temperature Increase in MRAM at Writing: A Finite Element Approach. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560669 (reposiTUm) | |
| 20. | Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Gös, W., Selberherr, S., Sverdlov, V. (2021). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560669 (reposiTUm) | |
| 19. | Fiorentini, S., Ender, J., Selberherr, S., de Orio, R., Goes, W., Sverdlov, V. (2020). Comprehensive Modeling of Coupled Spin and Charge Transport Through Magnetic Tunnel Junctions. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365497 (reposiTUm) | |
| 18. | Fiorentini, S., Ender, J., Mohamedou, M., Selberherr, S., Orio, R., Goes, W., Sverdlov, V. (2020). Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells. In Spintronics XIII (pp. 50–56), Austria. https://doi.org/10.1117/12.2567480 (reposiTUm) | |
| 17. | Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2020). Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells. In Spintronics XIII, San Diego, CA, USA. https://doi.org/10.1117/12.2567480 (reposiTUm) | |
| 16. | Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020). Computation of Torques in Magnetic Tunnel Junctions Through Spin and Charge Transport Modeling. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241657 (reposiTUm) | |
| 15. | Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020). Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241662 (reposiTUm) | |
| 14. | Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., de Orio, R., Selberherr, S. (2020). Emerging CMOS Compatible Magnetic Memories and Logic. In 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc49063.2020.9073332 (reposiTUm) | |
| 13. | Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM. In ECS Meeting Abstracts (p. 1389), Honolulu, Austria. https://doi.org/10.1149/ma2020-01241389mtgabs (reposiTUm) | |
| 12. | Fiorentini, S., de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current. In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm47692.2020.9117985 (reposiTUm) | |
| 11. | de Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2020). Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365283 (reposiTUm) | |
| 10. | Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V. (2020). Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques With Reduced Currents. In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 58–61), Orlando, Florida, USA. (reposiTUm) | |
| 9. | Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2019). A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM (p. 1), San Francisco, CA, USA, Austria. (reposiTUm) | |
| 8. | Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019). Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells. In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870359 (reposiTUm) | |
| 7. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2019). Comprehensive Modeling of Switching in Perpendicular STT-MRAM. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 107–108), Kona. (reposiTUm) | |
| 6. | Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM. In Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 152–153), Bologna, Italy. (reposiTUm) | |
| 5. | de Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis45800.2019.9041920 (reposiTUm) | |
| 4. | Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71), Evanston, IL, United States. (reposiTUm) | |
| 3. | Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V. (2019). Robustness of the Two-Pulse Switching Scheme for SOT-MRAM. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 54–55), Kona. (reposiTUm) | |
| 2. | de Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. https://doi.org/10.1109/essderc.2019.8901780 (reposiTUm) | |
| 1. | Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM. In Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM) (p. 34), Heraklion, Greece. (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
| 2. | Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019). Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells. European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm) | |
| 1. | Ender, J., Orio, R., Fiorentini, S., Goes, W., Sverdlov, V. (2019). Large-Scale Finite Element Micromagnetics Simulations Using Open Source Software. European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm) | |
Doctor's Theses (authored and supervised)
| 1. | Fiorentini, S. (2023). Computation of Torques in Magnetic Tunnel Junctions Technische Universität Wien. https://doi.org/10.34726/hss.2023.109800 (reposiTUm) | |