Publications Tibor Grasser

827 records

Books and Editorships

12.   Filipovic, L., Grasser, T. (Eds.). (2022).
Miniaturized Transistors, Volume II.
MDPI. https://doi.org/10.3390/books978-3-0365-4170-9 (reposiTUm)

11.   Filipovic, L., Grasser, T. (2022).
Special Issue on Miniaturized Transistors, Volume II.
Micromachines, Vol.13 (p. 603). https://doi.org/10.3390/mi13040603 (reposiTUm)

10.   Grasser, T. (Eds.). (2020).
Noise in Nanoscale Semiconductor Devices.
Springer Science+Business Media New York. https://doi.org/10.1007/978-3-030-37500-3 (reposiTUm)

9.   Filipovic, L., Grasser, T. (2019).
Editorial for the Special Issue on Miniaturized Transistors.
Micromachines, Vol.10 (p. 300). https://doi.org/10.3390/mi10050300 (reposiTUm)

8.   Filipovic, L., Grasser, T. (Eds.). (2019).
Miniaturized Transistors.
MDPI. https://doi.org/10.3390/books978-3-03921-011-4 (reposiTUm)

7.  T. Grasser, J. Stathis:
"Bias Temperature Instability (BTI) in MOS Devices";
Microelectronics Reliability, 80 (2018).

6.   Grasser, T. (Eds.). (2014).
Hot Carrier Degradation in Semiconductor Devices.
Springer International Publishing. https://doi.org/10.1007/978-3-319-08994-2 (reposiTUm)

5.   Grasser, T. (Eds.). (2013).
Bias Temperature Instability for Devices and Circuits.
Springer Science+Business Media New York. https://doi.org/10.1007/978-1-4614-7909-3 (reposiTUm)

4.   Meller, G., Grasser, T. (Eds.). (2009).
Organic Electronics.
Springer-Verlag, Berlin-Heidelberg. https://doi.org/10.1007/978-3-642-04538-7 (reposiTUm)

3.   Grasser, T., Selberherr, S. (2007).
Editorial.
Microelectronics Reliability, Vol.47, PERGAMON-ELSEVIER SCIENCE LTD (pp. 839–840). https://doi.org/10.1016/j.microrel.2006.10.005 (reposiTUm)

2.   Grasser, T., Selberherr, S. (Eds.). (2007).
Simulation of Semiconductor Processes and Devices 2007.
Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-211-72861-1 (reposiTUm)

1.  T. Grasser (ed.):
"Advanced Device Modeling and Simulation";
World Scientific Publishing Co., 2003, ISBN: 9-812-38607-6; 210 pages.

Publications in Scientific Journals

224.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2023).
Over- And Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (A-Si3N4).
Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 (reposiTUm)

223.   Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab Initio Investigations in Amorphous Silicon Dioxide: Proposing a Multi-State Defect Model for Electron and Hole Capture.
Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm)

222.   Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., Luisier, M. (2022).
An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride.
Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 (reposiTUm)

221.   Knobloch, T., Selberherr, S., Grasser, T. (2022).
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.
Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 (reposiTUm)

220.   Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022).
Epitaxial Growth of Crystalline CaF₂ on Silicene.
ACS Applied Materials and Interfaces, 14(28), 32675–32682. https://doi.org/10.1021/acsami.2c06293 (reposiTUm)

219.   Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022).
Improving Stability in Two-Dimensional Transistors With Amorphous Gate Oxides by Fermi-Level Tuning.
Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm)

218.   Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2022).
Inorganic Molecular Crystals for 2D Electronics.
Nature Electronics, 4(12), 870–871. https://doi.org/10.1038/s41928-021-00691-w (reposiTUm)

217.   Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., Grasser, T. (2022).
Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models.
Materials Science Forum, 1062, 688–695. https://doi.org/10.4028/p-pijkeu (reposiTUm)

216.   Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022).
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

215.   Ruch, B., Jech, M., Pobegen, G., Grasser, T. (2021).
Applicability of Shockley-Read-Hall Theory for Interface States.
IEEE Transactions on Electron Devices, 68(4), 2092–2097. https://doi.org/10.1109/ted.2021.3049760 (reposiTUm)

214.   Illarionov, Y. Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
Solid-State Electronics, 185(108043), 108043. https://doi.org/10.1016/j.sse.2021.108043 (reposiTUm)

213.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory.
IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm)

212.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental.
IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm)

211.   Hernandez, Y., Stampfer, B., Grasser, T., Waltl, M. (2021).
Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.
Crystals, 11(9), 1150. https://doi.org/10.3390/cryst11091150 (reposiTUm)

210.   Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

209.   Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

208.   Ruch, B., Pobegen, G., Grasser, T. (2021).
Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs.
IEEE Transactions on Electron Devices, 68(4), 1804–1809. https://doi.org/10.1109/ted.2021.3060697 (reposiTUm)

207.   Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021).
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors.
IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm)

206.   Feil, M. W., Puschkarsky, K., Gustin, W., Reisinger, H., Grasser, T. (2021).
On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices.
IEEE Transactions on Electron Devices, 68(1), 236–243. https://doi.org/10.1109/ted.2020.3036321 (reposiTUm)

205.   Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., Waltl, M. (2021).
Physical Modeling of Charge Trapping in 4h-SiC DMOSFET Technologies.
IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 (reposiTUm)

204.   Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2021).
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices.
Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 (reposiTUm)

203.   Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021).
The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials.
Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm)

202.   Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021).
Toward Automated Defect Extraction From Bias Temperature Instability Measurements.
IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm)

201.   Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselbberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., Singh, R. (2021).
Transistors Based on Two-Dimensional Materials for Future Integrated Circuits.
Nature Electronics, 4(11), 786–799. https://doi.org/10.1038/s41928-021-00670-1 (reposiTUm)

200.   Wen, C., Banshchikov, A. G., Illarionov, Y., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., Lanza, M. (2020).
Dielectric Properties of Ultrathin CaF₂ Ionic Crystals.
Advanced Materials, 32(34), 2002525-1-2002525–2002526. (reposiTUm)

199.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2020).
Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays.
IEEE Transactions on Device and Materials Reliability, 20(2), 251–257. https://doi.org/10.1109/tdmr.2020.2985109 (reposiTUm)

198.   Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., Grasser, T. (2020).
Insulators for 2D Nanoelectronics: The Gap to Bridge.
Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 (reposiTUm)

197.   Ruch, B., Pobegen, G., Grasser, T. (2020).
Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping.
IEEE Transactions on Electron Devices, 67(10), 4092–4098. https://doi.org/10.1109/ted.2020.3018091 (reposiTUm)

196.   Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020).
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities.
IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm)

195.   Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2020).
Native High-K Oxides for 2D Transistors.
Nature Electronics, 3(8), 442–443. https://doi.org/10.1038/s41928-020-0464-2 (reposiTUm)

194.   Stampfer, B., Schanovsky, F., Grasser, T., Waltl, M. (2020).
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.
Micromachines, 11(4). https://doi.org/10.3390/mi11040446 (reposiTUm)

193.   Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., Grasser, T. (2020).
Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors.
Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 (reposiTUm)

192.   Feil, M., Huerner, A., Puschkarsky, K., Schleich, C., Eichinger, T., Gustin, W., Reisinger, H., Grasser, T. (2020).
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters.
Crystals, 10(12), 1143. https://doi.org/10.3390/cryst10121143 (reposiTUm)

191.   Berens, J. V., Pobegen, G., Grasser, T. (2020).
Tunneling Effects in NH₃ Annealed 4h-SiC Trench MOSFETs.
Materials Science Forum, 1004, 652–658. https://doi.org/10.4028/www.scientific.net/msf.1004.652 (reposiTUm)

190.   Jech, M., El-Sayed, A.-M. B., Tyaginov, S., Shluger, A. L., Grasser, T. (2019).
Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces.
Physical Review B, 100(19), Article 195302. https://doi.org/10.1103/physrevb.100.195302 (reposiTUm)

189.   Puschkarsky, K., Reisinger, H., Rott, G. A., Schluender, C., Gustin, W., Grasser, T. (2019).
An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps.
IEEE Transactions on Electron Devices, 66(11), 4623–4630. https://doi.org/10.1109/ted.2019.2941889 (reposiTUm)

188.   Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach.
IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 (reposiTUm)

187.   Bernhard, R., Pobegen, G., Rösch, M., Vytla, R. K., Grasser, T. (2019).
Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs.
IEEE Transactions on Device and Materials Reliability, 19(1), 133–139. https://doi.org/10.1109/tdmr.2019.2891794 (reposiTUm)

186.   Berens, J., Pobegen, G., Eichinger, T., Rescher, G., Grasser, T. (2019).
Cryogenic Characterization of NH₃ Post Oxidation Annealed 4h-SiC Trench MOSFETs.
Materials Science Forum, 963, 175–179. https://doi.org/10.4028/www.scientific.net/msf.963.175 (reposiTUm)

185.   Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019).
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-Mis-HEMTs.
Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm)

184.   Jing, X., Illarionov, Y., Yalon, E., Zhou, P., Grasser, T., Shi, Y., Lanza, M. (2019).
Engineering Field Effect Transistors With 2D Semiconducting Channels: Status and Prospects.
Advanced Functional Materials, 30(18), 1901971. https://doi.org/10.1002/adfm.201901971 (reposiTUm)

183.   Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., Grasser, T. (2019).
Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques.
IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 (reposiTUm)

182.   Oliva, N., Illarionov, Y. Y., Casu, E. A., Cavalieri, M., Knobloch, T., Grasser, T., Ionescu, A. M. (2019).
Hysteresis Dynamics in Double-Gated N-Type WSe₂ FETs With High-K Top Gate Dielectric.
IEEE Journal of the Electron Devices Society, 7, 1163–1169. https://doi.org/10.1109/jeds.2019.2933745 (reposiTUm)

181.   Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental.
IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm)

180.   Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory.
IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

179.   Wu, Z., Franco, J., Vandooren, A., Kaczer, B., Roussel, P., Rzepa, G., Grasser, T., Linten, D., Groeseneken, G. (2019).
Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration.
IEEE Transactions on Device and Materials Reliability, 19(2), 262–267. https://doi.org/10.1109/tdmr.2019.2906843 (reposiTUm)

178.   Giering, K.-U., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G., Vollertsen, R., Grasser, T., Jancke, R. (2019).
NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling.
IEEE Transactions on Electron Devices, 66(4), 1662–1668. https://doi.org/10.1109/ted.2019.2901907 (reposiTUm)

177.   Berens, J., Pobegen, G., Rescher, G., Aichinger, T., Grasser, T. (2019).
NH₃ and NO + NH₃ Annealing of 4h-SiC Trench MOSFETs: Device Performance and Reliability.
IEEE Transactions on Electron Devices, 66(11), 4692–4697. https://doi.org/10.1109/ted.2019.2941723 (reposiTUm)

176.   Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L.-A., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2019).
On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI.
IEEE Transactions on Device and Materials Reliability, 19(2), 268–274. https://doi.org/10.1109/tdmr.2019.2913258 (reposiTUm)

175.   Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Reliability of Scalable MoS2 FETs With 2 Nm Crystalline CaF2 Insulators.
2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 (reposiTUm)

174.   Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H. (2019).
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability.
IEEE Transactions on Electron Devices, 66(11), 4604–4616. https://doi.org/10.1109/ted.2019.2938262 (reposiTUm)

173.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., Weinbub, J. (2019).
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics.
IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 (reposiTUm)

172.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in N-FinFETs.
IEEE Electron Device Letters, 40(6), 870–873. https://doi.org/10.1109/led.2019.2913625 (reposiTUm)

171.   Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors.
Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 (reposiTUm)

170.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T. (2018).
A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability.
Microelectronics Reliability, 81, 186–194. https://doi.org/10.1016/j.microrel.2017.11.022 (reposiTUm)

169.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018).
A Physical Model for the Hysteresis in MoS2 Transistors.
IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

168.   Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Analysis of the Features of Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 (reposiTUm)

167.   Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

166.   Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018).
Comphy -- A Compact-Physics Framework for Unified Modeling of BTI.
Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm)

165.   Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2018).
Comprehensive Evaluation of Bias Temperature Instabilities on 4h-SiC MOSFETs Using Device Preconditioning.
Materials Science Forum, 924, 671–675. https://doi.org/10.4028/www.scientific.net/msf.924.671 (reposiTUm)

164.   Stathis, J. H., Mahapatra, S., Grasser, T. (2018).
Controversial Issues in Negative Bias Temperature Instability.
Microelectronics Reliability, 81, 244–251. https://doi.org/10.1016/j.microrel.2017.12.035 (reposiTUm)

163.   El-Sayed, A.-M., Watkins, M. B., Grasser, T., Shluger, A. L. (2018).
Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO.
Physical Review B, 98(064102). https://doi.org/10.1103/physrevb.98.064102 (reposiTUm)

162.   Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., Grasser, T. (2018).
Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence.
Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 (reposiTUm)

161.   Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 (reposiTUm)

160.   Tyaginov, S. E., Makarov, A. A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., Grasser, T. (2018).
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures.
Semiconductors, 52(2), 242–247. https://doi.org/10.1134/s1063782618020203 (reposiTUm)

159.   Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2018).
Preconditioned BTI on 4h-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique.
IEEE Transactions on Electron Devices, 65(4), 1419–1426. https://doi.org/10.1109/ted.2018.2803283 (reposiTUm)

158.   Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T. (2018).
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation.
IEEE Transactions on Device and Materials Reliability, 18(2), 144–153. https://doi.org/10.1109/tdmr.2018.2813063 (reposiTUm)

157.   Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., Grasser, T. (2018).
Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation.
IEEE Transactions on Electron Devices, 65(11), 4764–4771. https://doi.org/10.1109/ted.2018.2870170 (reposiTUm)

156.   Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., Grasser, T. (2017).
Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs.
IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 (reposiTUm)

155.   Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2017).
Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs.
Applied Physics Letters, 110(17), 173502. https://doi.org/10.1063/1.4982231 (reposiTUm)

154.   Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017).
Energetic Mapping of Oxide Traps in MoS₂ Field-Effect Transistors.
2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm)

153.   Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017).
Highly-Stable Black Phosphorus Field-Effect Transistors With Low Density of Oxide Traps.
Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm)

152.   Sharma, P., Tyaginov, S., Rauch, S. E., Franco, J., Makarov, A., Vexler, M. I., Kaczer, B., Grasser, T. (2017).
Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach.
IEEE Electron Device Letters, 38(2), 160–163. https://doi.org/10.1109/led.2016.2645901 (reposiTUm)

151.   Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., Grasser, T. (2017).
Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation.
IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 (reposiTUm)

150.   Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2017).
Improved Interface Trap Density Close to the Conduction Band Edge of A-Face 4h-SiC MOSFETs Revealed Using the Charge Pumping Technique.
Materials Science Forum, 897, 143–146. https://doi.org/10.4028/www.scientific.net/msf.897.143 (reposiTUm)

149.   Kaczer, B., Franco, J., Tyaginov, S., Jech, M., Rzepa, G., Grasser, T., O’Sullivan, B. J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., Horiguchi, N. (2017).
Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices.
Journal of Vacuum Science, Technology B, 35(1), 01A109. https://doi.org/10.1116/1.4972872 (reposiTUm)

148.   Song, X., Hui, F., Knobloch, T., Wang, B., Fan, Z., Grasser, T., Jing, X., Shi, Y., Lanza, M. (2017).
Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide.
Applied Physics Letters, 111(8), 083107. https://doi.org/10.1063/1.5000496 (reposiTUm)

147.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part I: Experimental.
IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm)

146.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part II: Theory.
IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm)

145.   Ullmann, B., Grasser, T. (2017).
Transformation: Nanotechnology—challenges in Transistor Design and Future Technologies.
Elektrotechnik Und Informationstechnik : E, i, 134(7), 349–354. https://doi.org/10.1007/s00502-017-0534-y (reposiTUm)

144.   Rupp, K., Jungemann, C., Hong, S.-M., Bina, M., Grasser, T., Jüngel, A. (2016).
A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation.
Journal of Computational Electronics. https://doi.org/10.1007/s10825-016-0828-z (reposiTUm)

143.   Illarionov, Y. Yu., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., Grasser, T. (2016).
Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors.
Japanese Journal of Applied Physics, 55(4S), 04EP03. https://doi.org/10.7567/jjap.55.04ep03 (reposiTUm)

142.   Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T. (2016).
Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces.
Solid-State Electronics, 125, 142–153. https://doi.org/10.1016/j.sse.2016.07.017 (reposiTUm)

141.   Jing, X., Panholzer, E., Song, X., Grustan-Gutierrez, E., Hui, F., Shi, Y., Benstetter, G., Illarionov, Y., Grasser, T., Lanza, M. (2016).
Fabrication of Scalable and Ultra Low Power Photodetectors With High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets.
Nano Energy, 30, 494–502. https://doi.org/10.1016/j.nanoen.2016.10.032 (reposiTUm)

140.   Illarionov, Y. Y., Waltl, M., Rzepa, G., Kim, J.-S., Kim, S., Dodabalapur, A., Akinwande, D., Grasser, T. (2016).
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
ACS Nano, 10(10), 9543–9549. https://doi.org/10.1021/acsnano.6b04814 (reposiTUm)

139.   Jech, M., Sharma, P., Tyaginov, S., Rudolf, F., Grasser, T. (2016).
On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling.
Japanese Journal of Applied Physics, 55(4S), 04ED14. https://doi.org/10.7567/jjap.55.04ed14 (reposiTUm)

138.   Rupp, K., Weinbub, J., Jüngel, A., Grasser, T. (2016).
Pipelined Iterative Solvers With Kernel Fusion for Graphics Processing Units.
ACM Transactions on Mathematical Software, 43(2), 1–27. https://doi.org/10.1145/2907944 (reposiTUm)

137.   Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., Shluger, A. L. (2016).
Role of Hydrogen in Volatile Behaviour of Defects in SiO₂-based Electronic Devices.
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 472(2190). https://doi.org/10.1098/rspa.2016.0009 (reposiTUm)

136.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Goes, W., Grasser, T. (2016).
The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits.
Solid-State Electronics, 125, 52–62. https://doi.org/10.1016/j.sse.2016.07.010 (reposiTUm)

135.   Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2016).
The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in N- And P-Channel LDMOS Devices.
Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 (reposiTUm)

134.   Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016).
The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors.
2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

133.   Rescher, G., Pobegen, G., Grasser, T. (2016).
Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress.
Materials Science Forum, 858, 481–484. https://doi.org/10.4028/www.scientific.net/msf.858.481 (reposiTUm)

132.   Tyaginov, S., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016).
Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON N-MOSFETs.
IEEE Electron Device Letters, 37(1), 84–87. https://doi.org/10.1109/led.2015.2503920 (reposiTUm)

131.   Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Morhammer, A., Grasser, T., Jüngel, A., Selberherr, S. (2016).
ViennaCL---Linear Algebra Library for Multi- And Many-Core Architectures.
SIAM Journal on Scientific Computing, 38(5), S412–S439. https://doi.org/10.1137/15m1026419 (reposiTUm)

130.   Vexler, M. I., Illarionov, Yu. Yu., Tyaginov, S. E., Grasser, T. (2015).
Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices.
Semiconductors, 49(2), 259–263. https://doi.org/10.1134/s1063782615020207 (reposiTUm)

129.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2015).
Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs.
Microelectronics Reliability, 55(9–10), 1427–1432. https://doi.org/10.1016/j.microrel.2015.06.021 (reposiTUm)

128.   Coppeta, R. A., Holec, D., Ceric, H., Grasser, T. (2015).
Evaluation of Dislocation Energy in Thin Films.
Philosophical Magazine, 95(2), 186–209. https://doi.org/10.1080/14786435.2014.994573 (reposiTUm)

127.   Kaczer, B., Franco, J., Roussel, P. J., Groeseneken, G., Chiarella, T., Horiguchi, N., Grasser, T. (2015).
Extraction of the Random Component of Time-Dependent Variability Using Matched Pairs.
IEEE Electron Device Letters, 36(4), 300–302. https://doi.org/10.1109/led.2015.2404293 (reposiTUm)

126.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Kaczer, B., Reisinger, H., Grasser, T. (2015).
Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs.
IEEE Transactions on Electron Devices, 62(9), 2730–2737. https://doi.org/10.1109/ted.2015.2454433 (reposiTUm)

125.   El-Sayed, A.-M., Watkins, M. B., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015).
Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide.
Microelectronic Engineering, 147, 141–144. https://doi.org/10.1016/j.mee.2015.04.073 (reposiTUm)

124.   Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015).
Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences.
IEEE Transactions on Electron Devices, 62(11), 3876–3881. https://doi.org/10.1109/ted.2015.2480704 (reposiTUm)

123.   El-Sayed, A.-M., Watkins, M. B., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015).
Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide.
Physical Review Letters, 114(115503). https://doi.org/10.1103/physrevlett.114.115503 (reposiTUm)

122.   Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015).
Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation.
IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm)

121.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., Grasser, T. (2015).
On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation.
Japanese Journal of Applied Physics, 54(4S), 04DC18. https://doi.org/10.7567/jjap.54.04dc18 (reposiTUm)

120.   Illarionov, Yu. Yu., Vexler, M. I., Karner, M., Tyaginov, S. E., Cervenka, J., Grasser, T. (2015).
TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures.
Current Applied Physics, 15(2), 78–83. https://doi.org/10.1016/j.cap.2014.10.015 (reposiTUm)

119.   El-Sayed, A.-M., Wimmer, Y., Goes, W., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015).
Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide.
Physical Review B, 92(014107). https://doi.org/10.1103/physrevb.92.014107 (reposiTUm)

118.   Rupp, K., Tillet, P., Jüngel, A., Grasser, T. (2014).
Achieving Portable High Performance for Iterative Solvers on Accelerators.
Proceedings in Applied Mathematics and Mechanics, 14(1), 963–964. (reposiTUm)

117.   Illarionov, Y. Yu., Bina, M., Tyaginov, S. E., Grasser, T. (2014).
An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs.
Japanese Journal of Applied Physics, 53(4S), 04EC22. https://doi.org/10.7567/jjap.53.04ec22 (reposiTUm)

116.   Illarionov, Yu. Yu., Smith, A. D., Vaziri, S., Ostling, M., Mueller, T., Lemme, M. C., Grasser, T. (2014).
Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors.
Applied Physics Letters, 105(14), 143507. https://doi.org/10.1063/1.4897344 (reposiTUm)

115.   Camargo, V. V. A., Kaczer, B., Grasser, T., Wirth, G. (2014).
Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics.
Microelectronics Reliability, 54(11), 2364–2370. (reposiTUm)

114.   Pobegen, G., Aichinger, T., Salinaro, A., Grasser, T. (2014).
Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4h-SiC nMOSFETs.
Materials Science Forum, 778–780, 959–962. https://doi.org/10.4028/www.scientific.net/msf.778-780.959 (reposiTUm)

113.   Rott, G. A., Rott, K., Reisinger, H., Gustin, W., Grasser, T. (2014).
Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 Nm Technology P-Channel Transistors.
Microelectronics Reliability, 54(9–10), 2310–2314. https://doi.org/10.1016/j.microrel.2014.07.040 (reposiTUm)

112.   Tyaginov, S. E., Illarionov, Yu. Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T. (2014).
Modeling of Deep-Submicron Silicon-Based MISFETs With Calcium Fluoride Dielectric.
Journal of Computational Electronics, 13(3), 733–738. https://doi.org/10.1007/s10825-014-0593-9 (reposiTUm)

111.   Tyaginov, S., Wimmer, Y., Grasser, T. (2014).
Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment.
Facta Universitatis - Series: Electronics and Energetics, 27(4), 479–508. https://doi.org/10.2298/fuee1404479t (reposiTUm)

110.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Kaczer, B. (2014).
NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark.
IEEE Transactions on Electron Devices, 61(11), 3586–3593. https://doi.org/10.1109/ted.2014.2353578 (reposiTUm)

109.   Bina, M., Tyaginov, S., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014).
Predictive Hot-Carrier Modeling of N-Channel MOSFETs.
IEEE Transactions on Electron Devices, 61(9), 3103–3110. https://doi.org/10.1109/ted.2014.2340575 (reposiTUm)

108.   Pobegen, G., Nelhiebel, M., de Filippis, S., Grasser, T. (2013).
Accurate High Temperature Measurements Using Local Polysilicon Heater Structures.
IEEE Transactions on Device and Materials Reliability, 14(1), 169–176. https://doi.org/10.1109/tdmr.2013.2265015 (reposiTUm)

107.   Pobegen, G., Grasser, T. (2013).
Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps.
Materials Science Forum, 740–742, 757–760. https://doi.org/10.4028/www.scientific.net/msf.740-742.757 (reposiTUm)

106.   Kaczer, B., Toledano-Luque, M., Goes, W., Grasser, T., Groeseneken, G. (2013).
Gate Current Random Telegraph Noise and Single Defect Conduction.
Microelectronic Engineering, 109, 123–125. https://doi.org/10.1016/j.mee.2013.03.110 (reposiTUm)

105.   Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Roussel, P. J., Witters, L., Grasser, T., Groeseneken, G. (2013).
NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack.
IEEE Transactions on Device and Materials Reliability, 13(4), 497–506. https://doi.org/10.1109/tdmr.2013.2281731 (reposiTUm)

104.   Pobegen, G., Tyaginov, S., Nelhiebel, M., Grasser, T. (2013).
Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation.
IEEE Electron Device Letters, 34(8), 939–941. https://doi.org/10.1109/led.2013.2262521 (reposiTUm)

103.   Pobegen, G., Grasser, T. (2013).
On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale.
IEEE Transactions on Electron Devices, 60(7), 2148–2155. https://doi.org/10.1109/ted.2013.2264816 (reposiTUm)

102.   Aichinger, T., Nelhiebel, M., Grasser, T. (2013).
Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-Low and Unique Temperatures.
Microelectronics Reliability, 53(7), 937–946. https://doi.org/10.1016/j.microrel.2013.03.007 (reposiTUm)

101.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Kauerauf, T., Mitard, J., Witters, L., Grasser, T., Groeseneken, G. (2013).
SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues.
IEEE Transactions on Electron Devices, 60(1), 405–412. https://doi.org/10.1109/ted.2012.2225624 (reposiTUm)

100.   Franco, J., Kaczer, B., Roussel, P. J., Mitard, J., Cho, M., Witters, L., Grasser, T., Groeseneken, G. (2013).
SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI.
IEEE Transactions on Electron Devices, 60(1), 396–404. https://doi.org/10.1109/ted.2012.2225625 (reposiTUm)

99.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Kauerauf, T., Mitard, J., Eneman, G., Witters, L., Grasser, T., Groeseneken, G. (2013).
Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs.
Microelectronic Engineering, 109, 250–256. https://doi.org/10.1016/j.mee.2013.03.001 (reposiTUm)

98.   Toledano-Luque, M., Kaczer, B., Grasser, T., Roussel, P. J., Franco, J., Groeseneken, G. (2013).
Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions.
Journal of Vacuum Science, Technology B, 31(1), 01A114. https://doi.org/10.1116/1.4772587 (reposiTUm)

97.   Camargo, V. V. A., Kaczer, B., Wirth, G., Grasser, T., Groeseneken, G. (2013).
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22(2), 280–285. https://doi.org/10.1109/tvlsi.2013.2240323 (reposiTUm)

96.   Schanovsky, F., Baumgartner, O., Sverdlov, V., Grasser, T. (2012).
A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures.
Journal of Computational Electronics, 11(3), 218–224. https://doi.org/10.1007/s10825-012-0403-1 (reposiTUm)

95.   Vasicek, M., Cervenka, J., Esseni, D., Palestri, P., Grasser, T. (2012).
Applicability of Macroscopic Transport Models to Decananometer MOSFETs.
IEEE Transactions on Electron Devices, 59(3), 639–646. https://doi.org/10.1109/ted.2011.2181177 (reposiTUm)

94.   Franco, J., Graziano, S., Kaczer, B., Crupi, F., Ragnarsson, L.-Å., Grasser, T., Groeseneken, G. (2012).
BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic.
Microelectronics Reliability, 52(9–10), 1932–1935. https://doi.org/10.1016/j.microrel.2012.06.058 (reposiTUm)

93.   Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, Ph. J., Grasser, T., Groeseneken, G. (2012).
Defect-Centric Perspective of Time-Dependent BTI Variability.
Microelectronics Reliability, 52(9–10), 1883–1890. https://doi.org/10.1016/j.microrel.2012.06.120 (reposiTUm)

92.   Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, Ph. J., Grasser, T., Asenov, A., Groeseneken, G. (2012).
Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs.
IEEE Electron Device Letters, 33(6), 779–781. (reposiTUm)

91.   Rott, K., Reisinger, H., Aresu, S., Schlünder, C., Kölpin, K., Gustin, W., Grasser, T. (2012).
New Insights on the PBTI Phenomena in SiON pMOSFETs.
Microelectronics Reliability, 52(9–10), 1891–1894. https://doi.org/10.1016/j.microrel.2012.06.015 (reposiTUm)

90.   Grasser, T. (2012).
Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities.
Microelectronics Reliability, 52(1), 39–70. https://doi.org/10.1016/j.microrel.2011.09.002 (reposiTUm)

89.   Starkov, I., Tyaginov, S., Enichlmair, H., Park, J. M., Ceric, H., Grasser, T. (2011).
Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution From Charge Pumping Measurements.
Solid State Phenomena, 178–179, 267–272. https://doi.org/10.4028/www.scientific.net/ssp.178-179.267 (reposiTUm)

88.   Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, Ch., Park, J. M., Seebacher, E., Orio, R., Ceric, H., Grasser, T. (2011).
An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation.
Microelectronics Reliability, 51(9–11), 1525–1529. https://doi.org/10.1016/j.microrel.2011.07.089 (reposiTUm)

87.   Goes, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
Solid State Phenomena, 178–179, 473–482. https://doi.org/10.4028/www.scientific.net/ssp.178-179.473 (reposiTUm)

86.   Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Franco, J., Ragnarsson, L. Å., Grasser, T., Groeseneken, G. (2011).
Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors After Positive and Negative Gate Bias Temperature Stress.
Applied Physics Letters, 98(18), 183506. https://doi.org/10.1063/1.3586780 (reposiTUm)

85.   Starkov, I., Tyaginov, S., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Ceric, H., Grasser, T. (2011).
Hot-Carrier Degradation Caused Interface State Profile-Simulation Versus Experiment.
Journal of Vacuum Science, Technology B, 29(1), 01AB09. https://doi.org/10.1116/1.3534021 (reposiTUm)

84.   Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M. (2011).
Impact of Gate Poly Doping and Oxide Thickness on the N- And PBTI in MOSFETs.
Microelectronics Reliability, 51(9–11), 1530–1534. https://doi.org/10.1016/j.microrel.2011.06.024 (reposiTUm)

83.   Schanovsky, F., Gös, W., Grasser, T. (2011).
Multiphonon Hole Trapping From First Principles.
Journal of Vacuum Science, Technology B, 29(1), 01A201. https://doi.org/10.1116/1.3533269 (reposiTUm)

82.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, P. P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T. Y., Groeseneken, G. (2011).
On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs.
Microelectronic Engineering, 88(7), 1388–1391. https://doi.org/10.1016/j.mee.2011.03.065 (reposiTUm)

81.   Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Simoen, E., Groeseneken, G. (2011).
Recent Trends in Bias Temperature Instability.
Journal of Vacuum Science, Technology B, 29, 01AB01-1-01AB01-7. (reposiTUm)

80.   Toledano-Luque, M., Kaczer, B., Roussel, Ph., Cho, M. J., Grasser, T., Groeseneken, G. (2011).
Temperature Dependence of the Emission and Capture Times of SiON Individual Traps After Positive Bias Temperature Stress.
Journal of Vacuum Science, Technology B, 29(1), 01AA04. https://doi.org/10.1116/1.3532947 (reposiTUm)

79.   Toledano-Luque, M., Kaczer, B., Simoen, E., Roussel, Ph. J., Veloso, A., Grasser, T., Groeseneken, G. (2011).
Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-K Dielectrics.
Microelectronic Engineering, 88(7), 1243–1246. https://doi.org/10.1016/j.mee.2011.03.097 (reposiTUm)

78.   Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011).
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps.
IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm)

77.   Schanovsky, F., Gös, W., Grasser, T. (2010).
An Advanced Description of Oxide Traps in MOS Transistors and Its Relation to DFT.
Journal of Computational Electronics, 9(3–4), 135–140. https://doi.org/10.1007/s10825-010-0323-x (reposiTUm)

76.   Aichinger, T., Nelhiebel, M., Grasser, T. (2010).
Energetic Distribution of Oxide Traps Created Under Negative Bias Temperature Stress and Their Relation to Hydrogen.
Applied Physics Letters, 96, 133511-1-133511–133513. (reposiTUm)

75.   Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T. (2010).
In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip.
IEEE Transactions on Device and Materials Reliability, 10(1), 3–8. (reposiTUm)

74.   Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling.
Microelectronics Reliability, 50, 1267–1272. (reposiTUm)

73.   Rupp, K., Jüngel, A., Grasser, T. (2010).
Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors.
Journal of Computational Physics, 229, 8750–8765. (reposiTUm)

72.   Ryan, J. T., Lenahan, P. M., Grasser, T., Enichlmair, H. (2010).
Observations of Negative Bias Temperature Instability Defect Generation via on the Fly Electron Spin Resonance.
Applied Physics Letters, 96(22), 223509. https://doi.org/10.1063/1.3428783 (reposiTUm)

71.   Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T. (2010).
Observing Two Stage Recovery of Gate Oxide Damage Created Under Negative Bias Temperature Stress.
Journal of Applied Physics, 107, 024508-1-024508–8. (reposiTUm)

70.   Kaczer, B., Roussel, P. J., Grasser, T., Groeseneken, G. (2010).
Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI.
IEEE Electron Device Letters, 31(5), 411–413. https://doi.org/10.1109/led.2010.2044014 (reposiTUm)

69.   Grasser, T., Reisinger, H., Wagner, P.-J., Kaczer, B. (2010).
Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors.
Physical Review B, 82(245318). https://doi.org/10.1103/physrevb.82.245318 (reposiTUm)

68.   Aichinger, T., Nelhiebel, M., Grasser, T. (2009).
A Combined Study of P- And N-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI.
IEEE Transactions on Electron Devices, 56(12), 3018–3026. (reposiTUm)

67.   Reisinger, H., Vollertsen, R. P., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C. (2009).
A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides.
IEEE Transactions on Device and Materials Reliability, 9(2), 106–114. https://doi.org/10.1109/tdmr.2009.2021389 (reposiTUm)

66.   Tyaginov, S. E., Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Grasser, T., Meinerzhagen, B. (2009).
Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films.
Journal of Physics D: Applied Physics, 42(11), 115307. https://doi.org/10.1088/0022-3727/42/11/115307 (reposiTUm)

65.   Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Tyaginov, S. E., Grasser, T. (2009).
Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures With High-Quality Tunnel-Thin Fluoride Layer.
Journal of Applied Physics, 105(8), 083716. https://doi.org/10.1063/1.3110066 (reposiTUm)

64.   Grasser, T., Kaczer, B. (2009).
Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs.
IEEE Transactions on Electron Devices, 56(5), 1056–1062. https://doi.org/10.1109/ted.2009.2015160 (reposiTUm)

63.   Tyaginov, S., Sverdlov, V., Starkov, I., Gös, W., Grasser, T. (2009).
Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate.
Microelectronics Reliability, 49(9–11), 998–1002. https://doi.org/10.1016/j.microrel.2009.06.018 (reposiTUm)

62.   Kaczer, B., Veloso, A., Roussel, Ph. J., Grasser, T., Groeseneken, G. (2009).
Investigation of Bias-Temperature Instability in Work-Function-Tuned High-K/Metal-Gate Stacks.
Journal of Vacuum Science, Technology B, 27(1), 459–462. (reposiTUm)

61.   Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T. (2009).
On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress.
Microelectronics Reliability, 49(9–11), 1013–1017. https://doi.org/10.1016/j.microrel.2009.06.040 (reposiTUm)

60.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P. P., Nelhiebel, M. (2009).
Understanding Negative Bias Temperature Instability in the Context of Hole Trapping.
Microelectronic Engineering, 86(7–9), 1876–1882. (reposiTUm)

59.   Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T. (2008).
A 2D Non-Parabolic Six-Moments Model.
Solid-State Electronics, 52(10), 1606–1609. https://doi.org/10.1016/j.sse.2008.06.010 (reposiTUm)

58.   Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., Kaczer, B. (2008).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 (reposiTUm)

57.   Martens, K., Kaczer, B., Grasser, T., De Jaeger, B., Meuris, M., Maes, H. E., Groeseneken, G. (2008).
Applicability of Charge Pumping on Germanium MOSFETs.
IEEE Electron Device Letters, 29(12), 1364–1366. https://doi.org/10.1109/led.2008.2007582 (reposiTUm)

56.   Goes, W., Karner, M., Sverdlov, V., Grasser, T. (2008).
Charging and Discharging of Oxide Defects in Reliability Issues.
IEEE Transactions on Device and Materials Reliability, 8(3), 491–500. https://doi.org/10.1109/tdmr.2008.2005247 (reposiTUm)

55.   Grasser, T., Gös, W., Kaczer, B. (2008).
Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models.
IEEE Transactions on Device and Materials Reliability, 8(1), 79–97. https://doi.org/10.1109/tdmr.2007.912779 (reposiTUm)

54.   Lenahan, P. M., Knowlton, B., Conley, J. F., Tonti, B., Suehle, J., Grasser, T. (2008).
Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop.
IEEE Transactions on Device and Materials Reliability, 8(3), 490. (reposiTUm)

53.   Aichinger, T., Nelhiebel, M., Grasser, T. (2008).
On the Temperature Dependence of NBTI Recovery.
Microelectronics Reliability, 48(8–9), 1178–1184. https://doi.org/10.1016/j.microrel.2008.06.018 (reposiTUm)

52.   Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T. (2008).
Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs.
Journal of Computational Electronics, 7(3), 168–171. https://doi.org/10.1007/s10825-008-0239-x (reposiTUm)

51.   Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S. (2007).
A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications.
Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 (reposiTUm)

50.   Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T., Selberherr, S. (2007).
Comparison of Deposition Models for a TEOS LPCVD Process.
Microelectronics Reliability, 47(4–5), 623–625. https://doi.org/10.1016/j.microrel.2007.01.058 (reposiTUm)

49.   Spevak, M., Grasser, T. (2007).
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26(8), 1408–1416. (reposiTUm)

48.   Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., Selberherr, S. (2007).
Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass.
IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 (reposiTUm)

47.   Span, G., Wagner, M., Grasser, T., Holmgren, L. (2007).
Miniaturized TEG With Thermal Generation of Free Carriers.
Physica Status Solidi (RRL) - Rapid Research Letters, 1(6), 241–243. https://doi.org/10.1002/pssr.200701171 (reposiTUm)

46.   Grasser, T., Selberherr, S. (2007).
Modeling of Negative Bias Temperature Instability.
Journal of Telecommunications and Information Technology, 7(2), 92–102. (reposiTUm)

45.   Entner, R., Grasser, T., Triebl, O., Enichlmair, H., Minixhofer, R. (2007).
Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures.
Microelectronics Reliability, 47(4–5), 697–699. (reposiTUm)

44.   Wagner, M., Karner, M., Cervenka, J., Vasicek, M., Kosina, H., Holzer, S., Grasser, T. (2007).
Quantum Correction for DG MOSFETs.
Journal of Computational Electronics, 5(4), 397–400. https://doi.org/10.1007/s10825-006-0032-7 (reposiTUm)

43.   Wagner, M., Span, G., Holzer, S., Grasser, T. (2007).
Thermoelectric Power Generation Using Large-Area Si/SiGe Pn-Junctions With Varying Ge Content.
Semiconductor Science and Technology, 22, 173–176. (reposiTUm)

42.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2007).
VSP - A Gate Stack Analyzer.
Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 (reposiTUm)

41.   Triebl, O., Grasser, T. (2007).
Vector Discretization Schemes in Technology CAD Environments.
Romanian Journal of Information Science and Technology, 10(2), 167–176. (reposiTUm)

40.   Cervenka, J., Wessner, W., Al-Ani, E., Grasser, T., Selberherr, S. (2006).
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2118–2128. https://doi.org/10.1109/tcad.2006.876514 (reposiTUm)

39.   Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., Selberherr, S. (2006).
High-Field Electron Mobility Model for Strained-Silicon Devices.
IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 (reposiTUm)

38.   Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S. (2006).
Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices.
Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 (reposiTUm)

37.   Wagner, S., Grasser, T., Fischer, C., Selberherr, S. (2005).
An Advanced Equation Assembly Module.
Engineering with Computers, 21(2), 151–163. https://doi.org/10.1007/s00366-005-0319-5 (reposiTUm)

36.   Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B. (2005).
Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium.
IEEE Transactions on Electron Devices, 52(11), 2404–2408. (reposiTUm)

35.   Ayalew, T., Grasser, T., Kosina, H., Selberherr, S. (2005).
Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices.
Materials Science Forum, 483–485, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845 (reposiTUm)

34.   Grasser, T. (2005).
Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation.
Physica A: Statistical Mechanics and Its Applications, 349, 221–258. (reposiTUm)

33.   Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Selberherr, S. (2005).
Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data.
Journal of Applied Physics, 97(9), 093710. https://doi.org/10.1063/1.1883311 (reposiTUm)

32.   Ayalew, T., Kim, S. C., Grasser, T., Selberherr, S. (2005).
Numerical Analysis of SiC Merged PiN Schottky Diodes.
Materials Science Forum, 483–485, 949–952. https://doi.org/10.4028/www.scientific.net/msf.483-485.949 (reposiTUm)

31.   Kim, S. C., Bahng, W., Kim, N. K., Kim, E. D., Ayalew, T., Grasser, T., Selberherr, S. (2005).
Numerical Simulation and Optimization for 900V 4h-SiC DiMOSFET Fabrication.
Materials Science Forum, 483–485, 793–796. https://doi.org/10.4028/www.scientific.net/msf.483-485.793 (reposiTUm)

30.   Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., Selberherr, S. (2004).
A Non-Parabolic Six Moments Model for the Simulation of Sub-100 Nm Semiconductor Devices.
Journal of Computational Electronics, 3(3–4), 183–187. https://doi.org/10.1007/s10825-004-7041-1 (reposiTUm)

29.  S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 365 - 369. https://doi.org/10.1016/j.apsusc.2003.09.035

28.  T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44 (2004), 9-11; 1473 - 1478. https://doi.org/10.1016/j.microrel.2004.07.042

27.  S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35 (2004), 10; 805 - 810. https://doi.org/10.1016/j.mejo.2004.06.011

26.  J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48 (2004), 6; 1007 - 1015. https://doi.org/10.1016/j.sse.2003.12.015

25.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224 (2004), 1-4; 361 - 364. https://doi.org/10.1016/j.apsusc.2003.09.034

24.  J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47 (2003), 2; 275 - 281. https://doi.org/10.1016/S0038-1101(02)00207-1

23.  T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91 (2003), 2; 251 - 274. https://doi.org/10.1109/JPROC.2002.808150

22.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39 (2003), 8; 691 - 692. https://doi.org/10.1049/el:20030440

21.  T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13 (2003), 3; 873 - 901. https://doi.org/10.1142/S012915640300206X

20.  T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43 (2003), 9-11; 1889 - 1894. https://doi.org/10.1016/S0026-2714(03)00321-4

19.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80 (2002), 4; 613 - 615. https://doi.org/10.1063/1.1445273

18.  H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1 (2002), 3; 371 - 374. https://doi.org/10.1023/A:1020703709031

17.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91 (2002), 6; 3869 - 3879. https://doi.org/10.1063/1.1450257

16.  A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics, 46 (2002), 10; 1545 - 1551. https://doi.org/10.1016/S0038-1101(02)00103-X

15.  T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology, 5 (2002), 4; 339 - 354.

14.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik (invited), 444 (2002), 28 - 41.

13.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik (invited), 444 (2002), 18 - 27.

12.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49 (2002), 10; 1814 - 1820. https://doi.org/10.1109/TED.2002.803645

11.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92 (2002), 10; 6019 - 6027. https://doi.org/10.1063/1.1516617

10.  T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B, 20 (2002), 1; 407 - 413. https://doi.org/10.1116/1.1445162

9.  M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80 (2002), 4; 607 - 609. https://doi.org/10.1063/1.1447002

8.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48 (2001), 10; 2331 - 2336. https://doi.org/10.1109/16.954473

7.  T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices, 48 (2001), 7; 1421 - 1427. https://doi.org/10.1109/16.930661

6.  F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices, 48 (2001), 9; 1878 - 1884.

5.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45 (2001), 5; 621 - 627. https://doi.org/10.1016/S0038-1101(01)00080-6

4.  T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90 (2001), 12; 6165 - 6171. https://doi.org/10.1063/1.1415366

3.  T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79 (2001), 12; 1900 - 1902. https://doi.org/10.1063/1.1405000

2.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90 (2001), 5; 2389 - 2396. https://doi.org/10.1063/1.1389757

1.  T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal, 31 (2000), 11-12; 873 - 881. https://doi.org/10.1016/S0026-2692(00)00083-5

Contributions to Books

23.   Cervenka, J., Kosik, R., Vasicek, M.-T., Gritsch, M., Selberherr, S., Grasser, T. (2023).
Macroscopic Transport Models for Classical Device Simulation.
In M. Rudan, R. Brunetti, S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1335–1381). Springer. https://doi.org/10.1007/978-3-030-79827-7_37 (reposiTUm)

22.   Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K. A., Stampfer, B., Reisinger, H., Grasser, T. (2022).
Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models.
In J. F. Michaud, L. V. Phung, D. Alquier, D. Planson (Eds.), Silicon Carbide and Related Materials 2021 (pp. 688–695). Trans Tech Publications Ltd , Switzerland. (reposiTUm)

21.   Waldhoer, D., El-Sayed, A.-M. B., Wimmer, Y., Waltl, M., Grasser, T. (2020).
Atomistic Modeling of Oxide Defects.
In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 609–648). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_18 (reposiTUm)

20.   Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., Grasser, T. (2017).
(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors.
In D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst (reposiTUm)

19.   Grasser, T., Langer, E., Selberherr, S. (2015).
Institut Für Mikroelektronik / Institute for Microelectronics.
In K. Unterrainer (Ed.), Die Fakultät für Elektrotechnik und Informationstechnik / The Faculty of Electrical Engineering and Information Technology (Vol. 4, pp. 57–62). Böhlau. https://doi.org/10.7767/9783205202240-006 (reposiTUm)

18.   Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, J., Cho, M., Simoen, E., Groeseneken, G. (2015).
Recent Trends in Bias Temperature Instability.
In R. Reis, Y. Cao, G. Wirth (Eds.), Circuit Design for Reliability (pp. 5–19). Springer New York. https://doi.org/10.1007/978-1-4614-4078-9_2 (reposiTUm)

17.   Goes, W., Schanovsky, F., Grasser, T. (2013).
Advanced Modeling of Oxide Defects.
In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 409–446). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_16 (reposiTUm)

16.   Schanovsky, F., Grasser, T. (2013).
On the Microscopic Limit of the RD Model.
In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 379–408). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_15 (reposiTUm)

15.   Grasser, T. (2013).
The Capture/Emission Time Map Approach to the Bias Temperature Instability.
In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 447–481). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_17 (reposiTUm)

14.   Rupp, K., Jüngel, A., Grasser, T. (2012).
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.
In R. Keller, D. Kramer, J.-P. Weiss (Eds.), Lecture Notes in Computer Science. Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-30397-5 (reposiTUm)

13.   Rupp, K., Jüngel, A., Grasser, T. (2012).
Deterministic Numerical Solution of the Boltzmann Transport Equation.
In R. Keller, D. Kramer, J.-P. Weiss (Eds.), Mathematics in Industry (pp. 53–59). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-25100-9_7 (reposiTUm)

12.   Tyaginov, S. E., Starkov, I., Enichlmair, H., Park, J. M., Jungemann, C., Grasser, T. (2011).
Physics-Based Hot-Carrier Degradation Modeling.
In R. Sah (Ed.), ECS Transactions (pp. 321–352). ECS Transactions. https://doi.org/10.1149/1.3572292 (reposiTUm)

11.   Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., Grasser, T. (2010).
(Invited) Charge Trapping and the Negative Bias Temperature Instability.
In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 (reposiTUm)

10.   Vasicek, M., Esseni, D., Fiegna, C., Grasser, T. (2010).
Modeling and Simulation Approaches for Drain Current Computation.
In Nanoscale CMOS: Innovative Materials, Modeling and Characterization (pp. 259–285). Wiley. (reposiTUm)

9.   Triebl, O., Grasser, T. (2010).
Numerical Power/Hv Device Modeling.
In W. Grabinski, T. Gneiting (Eds.), POWER/HVMOS Devices Compact Modeling (pp. 1–31). Springer Netherlands. https://doi.org/10.1007/978-90-481-3046-7_1 (reposiTUm)

8.   Grasser, T., Goes, W., Kaczer, B. (2009).
Critical Modeling Issues in Negative Bias Temperature Instability.
In R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (Eds.), ECS Transactions (pp. 265–287). ECS Transactions. https://doi.org/10.1149/1.3122096 (reposiTUm)

7.   Grasser, T., Gös, W., Kaczer, B. (2008).
Towards Engineering Modeling of Negative Bias Temperature Instability.
In Defects in Microelectronic Materials and Devices (pp. 399–436). Taylor and Francis/CRC Press. (reposiTUm)

6.   Kaczer, B., Grasser, T., Fernandez, R., Groeseneken, G. (2007).
Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability.
In R. Sah, J. Zhang, Y. Kamakura, M. Deen, J. Yota (Eds.), ECS Transactions (pp. 265–281). ECS Transactions. https://doi.org/10.1149/1.2728801 (reposiTUm)

5.   Ceric, H., Heinzl, R., Hollauer, C., Grasser, T., Selberherr, S. (2006).
Microstructure and Stress Aspects of Electromigration Modeling.
In Stress-Induced Phenomena in Metallization (pp. 262–268). American Institute of Physics. (reposiTUm)

4.   Wagner, M., Span, G., Holzer, S., Palankovski, V., Triebl, O., Grasser, T. (2006).
Power Output Improvement of Silicon-Germanium Thermoelectric Generators.
In ECS Transactions (pp. 1151–1162). ECS Transactions. https://doi.org/10.1149/1.2355909 (reposiTUm)

3.   Grasser, T. (2004).
Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation.
In Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II (pp. 423–446). Transworld Research Network. (reposiTUm)

2.  T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in: "Advanced Device Modeling and Simulation", T. Grasser (ed.); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

1.  T. Grasser, S. Selberherr:
"Current Transport Models for Engineering Applications";
in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed.); John Wiley & Sons, 2002, (invited), ISBN: 0-471-21247-4, 87 - 98.

Talks and Poster Presentations (with Proceedings-Entry)

433.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂.
In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm)

432.   Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H).
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm)

431.   Cvitkovich, L., Waldhör, D., El-Sayed, A., Jech, M., Wilhelmer, C., Grasser, T. (2022).
Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation.
In PSI-K 2022: abstracts book (p. 209), Lausanne, Schwitzerland. (reposiTUm)

430.   Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab-Initio Study of Multi-State Defects in Amorphous SiO2.
In PSI-K 2022: abstracts book (p. 264), Lausanne, Schwitzerland. (reposiTUm)

429.   Milardovich, D., Waldhoer, D., Jech, M., El-Sayed, A., Grasser, T. (2022).
Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 61–62), Granada, Spain. (reposiTUm)

428.   Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022).
CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators.
In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, USA. (reposiTUm)

427.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning.
In Abstracts of Graphene Week 2022, Munich, Germany. (reposiTUm)

426.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Finding Suitable Gate Insulators for Reliable 2D FETs.
In 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, United States. https://doi.org/10.1109/irps48227.2022.9764499 (reposiTUm)

425.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2022).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In PSI-K 2022 Abstracts Book, Lausanne, Schwitzerland. (reposiTUm)

424.   Jech, M., Grasser, T., Waltl, M. (2022).
The Importance of Secondary Generated Carriers in Modeling of Full Bias Space.
In 2022 6th IEEE Electron Devices Technology, Manufacturing Conference (EDTM), Japan. https://doi.org/10.1109/edtm53872.2022.9798262 (reposiTUm)

423.   Stephanie, M., Waltl, M., Grasser, T., Schrenk, B. (2022).
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM.
In Optical Fiber Communication Conference (OFC) 2022, San Diego, California, USA. https://doi.org/10.1364/ofc.2022.m1g.2 (reposiTUm)

422.   Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B. (2021).
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 With Excellent pMOS NBTI Reliability Compatible With 3D Sequential Tier Stacking.
In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm13553.2020.9372054 (reposiTUm)

421.   Grasser, T., O'Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., Waltl, M. (2021).
CV Stretch-Out Correction After Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
In 2021 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps46558.2021.9405184 (reposiTUm)

420.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

419.   Franco, J., Marneffe, J., Vandooren, A., Arimura, H., Ragnarsson, L., Claes, D., Litta, E., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B. (2021).
Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling Across SiO2 IL Thicknesses From 1.8 to 0.6 Nm for I/O and Core Logic.
In 2021 Symposium on VLSI Technology (VLSIT) (pp. 1–2), Kyoto, Japan. (reposiTUm)

418.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2021).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631837 (reposiTUm)

417.   Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A., Wilhelmer, C., Grasser, T. (2021).
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631790 (reposiTUm)

416.   Franco, J., Arimura, H., de Marneffe, J., Vandooren, A., Ragnarsson, L., Wu, Z., Claes, D., Litta, E., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B. (2021).
Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies : Invited Paper.
In 2021 International Conference on IC Design and Technology (ICICDT), Austin, TX, USA. https://doi.org/10.1109/icicdt51558.2021.9626482 (reposiTUm)

415.   Wen, C., Illarionov, Y., Frammelsberger, W., Knobloch, T., Grasser, T., Lanza, M. (2021).
Outstanding Dielectric Properties of Ultra-Thin CaF2 Dielectric Films.
In Bulletin of the American Physical Society, Los Angeles/USA, Austria. (reposiTUm)

414.   Ribeiro, F., Rupp, K., Grasser, T. (2021).
Parallel Solver Study for Solving the Boltzmann Transport Equation Using Spherical Harmonics Expansions on Supercomputers.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 97–98). (reposiTUm)

413.   Wilhelmer, C., Jech, M., Waldhoer, D., El-Sayed, A., Cvitkovich, L., Grasser, T. (2021).
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631833 (reposiTUm)

412.   Illarionov, Y., Knobloch, T., Grasser, T. (2020).
(Invited) Where Are the Best Insulators for 2D Field-Effect Transistors?.
In ECS Meeting Abstracts (p. 844), Honolulu, Austria. https://doi.org/10.1149/ma2020-0110844mtgabs (reposiTUm)

411.   Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B. (2020).
A Compact Physics Analytical Model for Hot-Carrier Degradation.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128327 (reposiTUm)

410.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

409.   Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020).
Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation.
In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm)

408.   Ruch, B., Jech, M., Pobegen, G., Grasser, T. (2020).
Applicability of Shockley-Read-Hall Theory for Interface States.
In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm13553.2020.9372032 (reposiTUm)

407.   Illarionov, Y., Banshchikov, A., Knobloch, T., Polyushkin, D., Wachter, S., Fedorov, V., Suturin, S., Stöger-Pollach, M., Vexler, M., Sokolov, N., Grasser, T. (2020).
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.
In 2020 Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc50226.2020.9135160 (reposiTUm)

406.   Ruch, B., Pobegen, G., Schleich, C., Grasser, T. (2020).
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129513 (reposiTUm)

405.   Illarionov, Y., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T. (2020).
Low Variability and 1010 on/Off Current Ratio in Flexible MoS2 FETs With Al2O3 Encapsulation Improved by Parylene N.
In Proceedings of the Electronic Materials Conference (EMC) (p. 25), Columbus, OH, USA - virtual. (reposiTUm)

404.   Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., Grasser, T. (2020).
Machine Learning Prediction of Defect Formation Energies in A-SiO₂.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241609 (reposiTUm)

403.   Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020).
Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm)

402.   Kruv, A., Kaczer, B., Grill, A., Gonzalez, M., Franco, J., Linten, D., Goes, W., Grasser, T., De Wolf, I. (2020).
On the Impact of Mechanical Stress on Gate Oxide Trapping.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129541 (reposiTUm)

401.   Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020).
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128349 (reposiTUm)

400.   Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I. (2020).
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128316 (reposiTUm)

399.   Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T. (2020).
Similarities and Differences of BTI in SiC and Si Power MOSFETs.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129259 (reposiTUm)

398.   Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T. (2020).
The Impact of the Graphene Work Function on the Stability of Flexible GFETs.
In Proceedings of the Electronic Materials Conference (EMC), Columbus, OH, USA - virtual. (reposiTUm)

397.   Grasser, T., Kaczer, B., O'Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M. (2020).
The Mysterious Bipolar Bias Temperature Stress From the Perspective of Gate-Sided Hydrogen Release.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129198 (reposiTUm)

396.   Wu, Z., Franco, J., Claes, D., Rzepa, G., Roussel, P., Collaert, N., Groeseneken, G., Linten, D., Grasser, T., Kaczer, B. (2019).
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720541 (reposiTUm)

395.   Illarionov, Y., Banshchikov, A., Vexler, M., Polyushkin, D., Wachter, S., Thesberg, M., Sokolov, N., Mueller, T., Grasser, T. (2019).
Epitaxial CaF2: A Route Towards Scalable 2D Electronics.
In Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4) (p. 69), Hangzhou, China. (reposiTUm)

394.   Jech, M., Tyaginov, S., Kaczer, B., Franco, J., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2019).
First–Principles Parameter–Free Modeling of N– And P–FET Hot–Carrier Degradation.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993630 (reposiTUm)

393.   O'Sullivan, B., Ritzenthaler, R., Rzepa, G., Wu, Z., Litta, E., Richard, O., Conard, T., Machkaoutsan, V., Fazan, P., Kim, C., Franco, J., Kaczer, B., Grasser, T., Spessot, A., Linten, D., Horiguchi, N. (2019).
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720598 (reposiTUm)

392.   Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Claes, D., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2019).
Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes.
In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2019.8731237 (reposiTUm)

391.   Waldhoer, D., Wimmer, Y., El-Sayed, A., Goes, W., Waltl, M., Grasser, T. (2019).
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989889 (reposiTUm)

390.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A., Grasser, T., Linten, D., Tyaginov, S. (2019).
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720584 (reposiTUm)

389.   Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S., Grasser, T., Waltl, M. (2019).
Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993446 (reposiTUm)

388.   Illarionov, Y., Grasser, T. (2019).
Reliability of 2D Field-Effect Transistors: From First Prototypes to Scalable Devices.
In 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa47161.2019.8984799 (reposiTUm)

387.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Simulation Study: The Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 609–610), Fukuoka, Japan. (reposiTUm)

386.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2019).
Statistical Characterization of BTI and RTN Using Integrated pMOS Arrays.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989904 (reposiTUm)

385.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2019.8901721 (reposiTUm)

384.   Illarionov, Y., Smithe, K., Waltl, M., Grady, R., Deshmukh, S., Pop, E., Grasser, T. (2018).
Annealing and Encapsulation of CVD-MoS2 FETs With 1010On/Off Current Ratio.
In 2018 76th Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc.2018.8442242 (reposiTUm)

383.   Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Ragnarsson, L., Hellings, G., Brus, S., Cott, D., De Heyn, V., Groeseneken, G., Horiguchi, N., Ryckaert, J., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2018).
BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration.
In 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2018.8614559 (reposiTUm)

382.   Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018).
Border Trap Based Modeling of SiC Transistor Transfer Characteristics.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm)

381.   Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B. (2018).
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting From NBTI/PBTI Stress in nMOS/pMOS Transistors.
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380.   Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., Grasser, T. (2018).
Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 218–221), Montreux, Austria. (reposiTUm)

379.   Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2018).
On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727089 (reposiTUm)

378.   Illarionov, Y., Molina- Mendoza, A., Waltl, M., Knobloch, T., Furchi, M., Mueller, T., Grasser, T. (2018).
Reliability of Next-Generation Field-Effect Transistors With Transition Metal Dichalcogenides.
In 2018 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2018.8353605 (reposiTUm)

377.   Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H. (2018).
Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 3B.5-1–3B.5-10), Waikoloa, HI, USA. (reposiTUm)

376.   Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017).
Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs.
In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm)

375.   Kaczer, B., Rzepa, G., Franco, J., Weckx, P., Chasin, A., Putcha, V., Bury, E., Simicic, M., Roussel, P., Hellings, G., Veloso, A., Matagne, P., Grasser, T., Linten, D. (2017).
Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2D-6.1–2D-6.7), Waikoloa, HI, USA. (reposiTUm)

374.   Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017).
Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm)

373.   Franco, J., Putcha, V., Vais, A., Sioncke, S., Waldron, N., Zhou, D., Rzepa, G., Roussel, P., Groeseneken, G., Heyns, M., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2017).
Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility N-Channel MOSFETs (Invited).
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268347 (reposiTUm)

372.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

371.   Illarionov, Y., Waltl, M., Smithe, K., Pop, E., Grasser, T. (2017).
Encapsulated MoS2 FETs With Improved Performance and Reliability.
In Proceedings of the GRAPCHINA 2017 (p. 1), Nanjing, China. (reposiTUm)

370.   Makarov, A., Tyaginov, S., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T. (2017).
Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology.
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268381 (reposiTUm)

369.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017).
Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors.
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368.   Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B. (2017).
Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up After BTI Stress.
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367.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

366.   Illarionov, Y., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T. (2017).
Reliability of Black Phosphorus Field-Effect Transistors With Respect to Bias-Temperature and Hot-Carrier Stress.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936338 (reposiTUm)

365.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

364.   Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T. (2017).
Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation.
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363.   Illarionov, Y., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T. (2016).
A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs.
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362.   Sharma, P., Tyaginov, S., Rauch, S., Franco, J., Kaczer, B., Makarov, A., Vexler, M., Grasser, T. (2016).
A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs.
In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599677 (reposiTUm)

361.   Giering, K., Rott, G., Rzepa, G., Reisinger, H., Puppala, A., Reich, T., Gustin, W., Grasser, T., Jancke, R. (2016).
Analog-Circuit NBTI Degradation and Time-Dependent NBTI Variability: An Efficient Physics-Based Compact Model.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574540 (reposiTUm)

360.   Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T. (2016).
Complete Extraction of Defect Bands Responsible for Instabilities in N and pFinFETs.
In 2016 Symposium on VLSI Technology Digest of Technical Papers (pp. 208–209), Kyoto, Japan. (reposiTUm)

359.   Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016).
Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm)

358.   Kaczer, B., Amoroso, S., Hussin, R., Asenov, A., Franco, J., Weckx, P., Roussel, P., Rzepa, G., Grasser, T., Horiguchi, N. (2016).
On the Distribution of the FET Threshold Voltage Shifts Due to Individual Charged Gate Oxide Defects.
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357.   Tyaginov, S., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016).
On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation.
In 2016 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2016.7904911 (reposiTUm)

356.   Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2016).
On the Subthreshold Drain Current Sweep Hysteresis of 4h-SiC nMOSFETs.
In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2016.7838392 (reposiTUm)

355.   Rupp, K., Morhammer, A., Grasser, T., Jüngel, A. (2016).
Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors.
In Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering (p. 104), Florence, Italy. (reposiTUm)

354.   Illarionov, Y., Waltl, M., Furchi, M., Mueller, T., Grasser, T. (2016).
Reliability of Single-Layer MoS<inf>2</inf> Field-Effect Transistors With SiO<inf>2</inf> And hBN Gate Insulators.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2016.7574543 (reposiTUm)

353.   Illarionov, Y., Waltl, M., Kim, J., Akinwande, D., Grasser, T. (2016).
Temperature-Dependent Hysteresis in Black Phosphorus FETs.
In Proceedings of the 2016 Graphene Week, Delft, Netherlands. (reposiTUm)

352.   Grasser, T., Waltl, M., Rzepa, G., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Reisinger, H., Kaczer, B. (2016).
The “permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574504 (reposiTUm)

351.   Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, C., Karner, H., Rzepa, G., Grasser, T. (2016).
Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations.
In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2016.7838516 (reposiTUm)

350.   Wimmer, Y., Goes, W., El-Sayed, A., Shluger, A., Grasser, T. (2015).
A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292254 (reposiTUm)

349.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063763 (reposiTUm)

348.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 650–651), Fukuoka, Japan. (reposiTUm)

347.   Rzepa, G., Gös, W., Kaczer, B., Grasser, T. (2015).
Characterization and Modeling of Reliability Issues in Nanoscale Devices.
In Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015 (pp. 2445–2448), Rio de Janeiro, Brasilien. (reposiTUm)

346.   Illarionov, Y., Vexler, M., Fedorov, V., Suturin, S., Sokolov, N., Grasser, T. (2015).
Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 330–331), Fukuoka, Japan. (reposiTUm)

345.   Ullmann, B., Waltl, M., Grasser, T. (2015).
Characterization of the Permanent Component of MOSFET Degradation Mechanisms.
In Proceedings of the 2015 Vienna Young Scient Symposium (pp. 36–37), Wien, Austria. (reposiTUm)

344.   Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T. (2015).
Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2015.7437064 (reposiTUm)

343.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs.
In Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 60), Maastricht. (reposiTUm)

342.   Rovitto, M., Zisser, W., Ceric, H., Grasser, T. (2015).
Electromigration Modelling of Void Nucleation in Open Cu-TSVs.
In 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Ghent, Belgium. https://doi.org/10.1109/eurosime.2015.7103100 (reposiTUm)

341.   Demel, H., Stanojevic, Z., Karner, M., Rzepa, G., Grasser, T. (2015).
Expanding TCAD Simulations From Grid to Cloud.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292290 (reposiTUm)

340.   Gerrer, L., Hussin, R., Amoroso, S., Franco, J., Weckx, P., Simicic, M., Horiguchi, N., Kaczer, B., Grasser, T., Asenov, A. (2015).
Experimental Evidences and Simulations of Trap Generation Along a Percolation Path.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324755 (reposiTUm)

339.   Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes.
In 2015 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2015.7409739 (reposiTUm)

338.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015).
Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112834 (reposiTUm)

337.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063778 (reposiTUm)

336.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Interplay Between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors.
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335.   Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Grasser, T. (2015).
Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292279 (reposiTUm)

334.   Sharma, P., Jech, M., Tyaginov, S., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Grasser, T. (2015).
Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292258 (reposiTUm)

333.   Franco, J., Kaczer, B., Roussel, P., Bury, E., Mertens, H., Ritzenthaler, R., Grasser, T., Horiguchi, N., Thean, A., Groeseneken, G. (2015).
NBTI in Si<inf>0.55</Inf>Ge<inf>0.45</Inf> Cladding P-FinFETs: Porting the Superior Reliability From Planar to 3D Architectures.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112694 (reposiTUm)

332.   Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T. (2015).
On the Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements.
In 2015 45th European Solid State Device Research Conference (ESSDERC) - Proceedings, Montreux, Austria. https://doi.org/10.1109/ESSDERC.2015.7324716 (reposiTUm)

331.   Wimmer, Y., Gös, W., El-Sayed, A., Shluger, A., Grasser, T. (2015).
On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects.
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330.   Tyaginov, S., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T. (2015).
On the Temperature Behavior of Hot-Carrier Degradation.
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329.   Grasser, T., Waltl, M., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation.
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328.   Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A. (2015).
Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs.
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327.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices.
In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm)

326.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors.
In Abstracts Graphene 2015 (p. 1), Bilbao, Spain. (reposiTUm)

325.   Kaczer, B., Franco, J., Weckx, P., Roussel, P., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Kukner, H., Raghavan, P., Catthoor, F., Rzepa, G., Goes, W., Grasser, T. (2015).
The Defect-Centric Perspective of Device and Circuit Reliability &Amp;#x2014; From Individual Defects to Circuits.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324754 (reposiTUm)

324.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Reisinger, H., Kaczer, B., Grasser, T. (2014).
A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-Scaled MOSFETs.
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323.   Waltl, M., Gös, W., Rott, K., Reisinger, H., Grasser, T. (2014).
A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT18.1–XT18.5), Phoenix. (reposiTUm)

322.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014).
A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs.
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321.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Franco, J., Kaczer, B. (2014).
A Unified Perspective of RTN and BTI.
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320.   Rupp, K., Tillet, P., Jungel, A., Grasser, T. (2014).
Achieving Portable High Performance for Iterative Solvers on Accelerators.
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319.   Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T. (2014).
Advanced Modeling of Charge Trapping: RTN, 1/F Noise, SILC, and BTI.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931567 (reposiTUm)

318.   Rupp, K., Rudolf, F., Weinbub, J., Jungel, A., Grasser, T. (2014).
Automatic Finite Volume Discretizations Through Symbolic Computations.
In Proc. 4th European Seminar on Computing (p. 192), Pilsen, Czech Republic. (reposiTUm)

317.   Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T. (2014).
Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge.
In 2014 IEEE Silicon Nanoelectronics Workshop (pp. 29–30), Honolulu. (reposiTUm)

316.   Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T. (2014).
Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931639 (reposiTUm)

315.   Grasser, T., Rzepa, G., Waltl, M., Goes, W., Rott, K., Rott, G., Reisinger, H., Franco, J., Kaczer, B. (2014).
Characterization and Modeling of Charge Trapping: From Single Defects to Devices.
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314.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Kaczer, B., Ceric, H., Grasser, T. (2014).
Dominant Mechanisms of Hot-Carrier Degradation in Short- And Long-Channel Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049512 (reposiTUm)

313.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Gös, W. (2014).
Evidence for Defect Pairs in SiON pMOSFETs.
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312.   Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M. (2014).
Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931577 (reposiTUm)

311.   Kaczer, B., Chen, C., Weckx, P., Roussel, P., Toledano-Luque, M., Cho, M., Watt, J., Chanda, K., Groeseneken, G., Grasser, T. (2014).
Maximizing Reliable Performance of Advanced CMOS Circuits-A Case Study.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 2D.4.1–2D.4.6), Phoenix. (reposiTUm)

310.   Rott, G., Rott, K., Reisinger, H., Gustin, W., Grasser, T. (2014).
Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 Nm Technology P-Channel Transistors.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 40), Maastricht. (reposiTUm)

309.   Giering, K., Sohrmann, C., Rzepa, G., Heis, L., Grasser, T., Jancke, R. (2014).
NBTI Modeling in Analog Circuits and Its Application to Long-Term Aging Simulations.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049501 (reposiTUm)

308.   Tyaginov, S., Bina, M., Franco, J., Kaczer, B., Grasser, T. (2014).
On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation.
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307.   Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014).
On the Microscopic Structure of Hole Traps in pMOSFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

306.   Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Grasser, T., Jüngel, A. (2014).
Performance Portability Study of Linear Algebra Kernels in OpenCL.
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305.   Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation for Short- And Long-Channel MOSFETs.
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304.   Rzepa, G., Goes, W., Rott, G., Rott, K., Karner, M., Kernstock, C., Kaczer, B., Reisinger, H., Grasser, T. (2014).
Physical Modeling of NBTI: From Individual Defects to Devices.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931568 (reposiTUm)

303.   Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Minixhofer, R., Ceric, H., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors.
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302.   Franco, J., Kaczer, B., Waldron, N., Roussel, P., Alian, A., Pourghaderi, M., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., Groeseneken, G. (2014).
RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-K InGaAs FinFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047087 (reposiTUm)

301.   Vexler, M., Illarionov, Y., Tyaginov, S., Sokolov, N., Fedorov, V., Grasser, T. (2014).
Simulation of the Electrical Characteristics of the Devices With Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT.
In Materials of XIII International conference DIELECTRICS (pp. 159–162), St-Petersburg, Russia. (reposiTUm)

300.   Bury, E., Degraeve, R., Cho, M., Kaczer, B., Gös, W., Grasser, T., Horiguchi, N., Groeseneken, G. (2014).
Study of (Correlated) Trap Sites in SILC, BTI and RTN in SiON and HKMG Devices.
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299.   Goes, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T. (2013).
(Invited) Multiphonon Processes as the Origin of Reliability Issues.
In ECS Transactions (pp. 31–47), Honolulu, Austria. https://doi.org/10.1149/05807.0031ecst (reposiTUm)

298.   Gös, W., Toledano-Luque, M., Baumgartner, O., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
A Comprehensive Model for Correlated Drain and Gate Current Fluctuations.
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297.   Rupp, K., Tillet, P., Smith, B., Grasser, T., Jungel, A. (2013).
A Note on the GPU Acceleration of Eigenvalue Computations.
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296.   Schanovsky, F., Baumgartner, O., Goes, W., Grasser, T. (2013).
A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability.
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295.   Illarionov, Y., Tyaginov, S., Bina, M., Grasser, T. (2013).
A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs.
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294.   Grasser, T., Rott, K., Reisinger, H., Wagner, P., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B. (2013).
Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy.
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293.   Schanovsky, F., Goes, W., Grasser, T. (2013).
Advanced Modeling of Charge Trapping at Oxide Defects.
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292.   Coppeta, R., Ceric, H., Holec, D., Grasser, T. (2013).
Critical Thickness for GaN Thin Film on AlN Substrate.
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291.   Weckx, P., Kaczer, B., Toledano-Luque, M., Grasser, T., Roussel, P., Kukner, H., Raghavan, P., Catthoor, F., Groeseneken, G. (2013).
Defect-Based Methodology for Workload-Dependent Circuit Lifetime Projections - Application to SRAM.
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290.   Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Bina, M., Grasser, T., Cho, M., Weckx, P., Groeseneken, G. (2013).
Degradation of Time Dependent Variability Due to Interface State Generation.
In 2013 Symposium on VLSI Technology (VLSIT) (pp. 190–191), Kyoto, Japan. (reposiTUm)

289.   Pobegen, G., Nelhiebel, M., Grasser, T. (2013).
Detrimental Impact of Hydrogen Passivation on NBTI and HC Degradation.
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288.   Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013).
Direct Tunneling and Gate Current Fluctuations.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm)

287.   Rott, G., Nielen, H., Reisinger, H., Gustin, W., Tyaginov, S., Grasser, T. (2013).
Drift Compensating Effect During Hot-Carrier Degradation of 130nm Dual Gate Oxide P-Channel Transistors.
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286.   Coppeta, R., Ceric, H., Karunamurthy, B., Grasser, T. (2013).
Epitaxial Volmer-Weber Growth Modelling.
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285.   Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T. (2013).
Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs.
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284.   Kaczer, B., Afanas'ev, V., Rott, K., Cerbu, F., Franco, J., Goes, W., Grasser, T., Madia, O., Nguyen, A., Stesmans, A., Reisinger, H., Toledano-Luque, M., Weckx, P. (2013).
Experimental Characterization of BTI Defects.
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283.   Grasser, T. (2013).
Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales.
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282.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B. (2013).
Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI.
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281.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B. (2013).
Recent Advances in Understanding Oxide Traps in pMOS Transistors.
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280.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P., Grasser, T. (2013).
Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias.
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279.   Franco, J., Kaczer, B., Roussel, P., Toledano-Luque, M., Weckx, P., Grasser, T. (2013).
Relevance of Non-Exponential Single-Defect-Induced Threshold Voltage Shifts for NBTI Variability.
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278.   Kaczer, B., Chen, C., Watt, J., Chanda, K., Weckx, P., Toledano-Luque, M., Groeseneken, G., Grasser, T. (2013).
Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications.
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277.   Tyaginov, S., Osintsev, D., Illarionov, Y., Park, J., Enichlmair, H., Vexler, M., Grasser, T. (2013).
Tunnelling of Strongly Non-Equilibrium Carriers in the Transistors of Traditional Configuration.
In Abstracts of XI Russian Conference on Semiconductor Physics (p. 441), St-Petersburg, Russia. (reposiTUm)

276.   Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
Understanding Correlated Drain and Gate Current Fluctuations.
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275.   Franco, J., Kaczer, B., Roussel, P., Mitard, J., Sioncke, S., Witters, L., Mertens, H., Grasser, T., Groeseneken, G. (2013).
Understanding the Suppressed Charge Trapping in Relaxed- And Strained-Ge/SiO<inf>2</Inf>/HfO<inf>2</Inf> pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks.
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274.   Waltl, M., Wagner, P., Reisinger, H., Rott, K., Grasser, T. (2012).
Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI.
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273.   Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T. (2012).
Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage N-MOSFETs Due to Hot-Carrier Stress.
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272.   Rupp, K., Jungemann, C., Bina, M., Jüngel, A., Grasser, T. (2012).
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation.
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271.   Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T. (2012).
Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs.
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270.   Toledano-Luque, M., Kaczer, B., Simoen, E., Degraeve, R., Franco, J., Roussel, P., Grasser, T., Groeseneken, G. (2012).
Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs.
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269.   Aichinger, T., Lenahan, P., Grasser, T., Pobegen, G., Nelhiebel, M. (2012).
Evidence for Pb Center-Hydrogen Complexes After Subjecting PMOS Devices to NBTI Stress - A Combined DCIV/SDR Study.
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268.   Rott, K., Schmitt-Landsiedel, D., Reisinger, H., Rott, G., Georgakos, G., Schluender, C., Aresu, S., Gustin, W., Grasser, T. (2012).
Impact and Measurement of Short Term Threshold Instabilities in MOSFETs of Analog Circuits.
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267.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Mitard, J., Ragnarsson, L., Witters, L., Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Bukhori, M., Grasser, T., Asenov, A. (2012).
Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs.
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266.   Tyaginov, S., Starkov, I., Triebl, O., Karner, M., Kernstock, C., Jungemann, C., Enichlmair, H., Park, J., Grasser, T. (2012).
Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation.
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265.   Rupp, K., Lagger, P., Grasser, T. (2012).
Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation.
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264.   Starkov, I., Enichlmair, H., Grasser, T. (2012).
Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage N-Mosfet.
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263.   Tyaginov, S., Grasser, T. (2012).
Modeling of Hot-Carrier Degradation: Physics and Controversial Issues.
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262.   Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T. (2012).
Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation.
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261.   Grasser, T., Kaczer, B., Reisinger, H., Wagner, P., Toledano-Luque, M. (2012).
Modeling of the Bias Temperature Instability Under Dynamic Stress and Recovery Conditions.
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260.   Wagner, P., Kaczer, B., Scholten, A., Reisinger, H., Bychikhin, S., Pogany, D., Vandamme, L., Grasser, T. (2012).
On the Correlation Between NBTI, SILC, and Flicker Noise.
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259.   Grasser, T., Kaczer, B., Reisinger, H., Wagner, P., Toledano-Luque, M. (2012).
On the Frequency Dependence of the Bias Temperature Instability.
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258.   Schanovsky, F., Grasser, T. (2012).
On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability.
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257.   Grasser, T., Reisinger, H., Rott, K., Toledano-Luque, M., Kaczer, B. (2012).
On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs.
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256.   Pobegen, G., Nelhiebel, M., Grasser, T. (2012).
Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability.
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255.   Rupp, K., Grasser, T., Jüngel, A. (2012).
Recent Advances in the Spherical Harmonics Expansion of the Boltzmann Transport Equation.
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254.   Grasser, T. (2012).
Recent Developments in Understanding the Bias Temperature Instability.
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253.   Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Eneman, G., Roussel, P., Cho, M., Kauerauf, T., Grasser, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G. (2012).
Reliability of SiGe Channel MOS.
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252.   Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T. (2012).
Simulation of Reliability on Nanoscale Devices.
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251.   Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Crupi, F., Eneman, G., Roussel, P., Grasser, T., Cho, M., Kauerauf, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G. (2012).
Superior Reliability and Reduced Time-Dependent Variability in High-Mobility SiGe Channel pMOSFETs for VLSI Logic Applications.
In Proceedings of IEEE International Conference on IC Design and Technology (pp. 1–4), Austin, TX, USA. (reposiTUm)

250.   Cervenka, J., Steinmair, A., Park, J., Seebacher, E., Grasser, T. (2012).
TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors.
In Proceedings of the 3rd European Workshop on CMOS Variability (p. 4), Nice, France. (reposiTUm)

249.   Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, P., Bukhori, M., Asenov, A., Schwarz, B., Bina, M., Grasser, T., Groeseneken, G. (2012).
The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

248.   Rupp, K., Jüngel, A., Grasser, T. (2011).
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.
In Proceedings of Facing the Multicore Challenge II (p. 11), Karlsruhe, Germany. (reposiTUm)

247.   Starkov, I., Tyaginov, S., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2011).
Accurate Extraction of MOSFET Interface State Spatial Distribution From Charge Pumping Measurements.
In GADEST 2011: Abstract Booklet (pp. 105–106), Loipersdorf, Austria, Austria. (reposiTUm)

246.   Rupp, K., Grasser, T., Jüngel, A. (2011).
Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6034964 (reposiTUm)

245.   Gös, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B. (2011).
Advanced Modeling of Oxide Defects for Random Telegraph Noise.
In Proceedings of the 21st International Conference on Noise and Fluctuations (p. 4), Salamanca, Spanien, Austria. (reposiTUm)

244.   Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, C., Park, J., Seebacher, E., Orio, R., Ceric, H., Grasser, T. (2011).
An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation.
In Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1525–1529), Bordeaux, France. (reposiTUm)

243.   Starkov, I., Starkov, A., Tyaginov, S., Enichlmair, H., Ceric, H., Grasser, T. (2011).
An Analytical Model for MOSFET Local Oxide Capacitance.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

242.   Starkov, I., Ceric, H., Tyaginov, S., Grasser, T. (2011).
Analysis of Worst-Case Hot-Carrier Conditions for N-Type MOSFET.
In 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics, Madonna di Campiglio, Italy. https://doi.org/10.1109/prime.2011.5966251 (reposiTUm)

241.   Starkov, I., Ceric, H., Tyaginov, S., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011).
Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of N- And P-Channel High-Voltage MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035066 (reposiTUm)

240.   Grasser, T., Wagner, P., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., Kaczer, B. (2011).
Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131624 (reposiTUm)

239.   Kaczer, B., Mahato, S., Valduga de Almeida Camargo, V., Toledano-Luque, M., Roussel, P., Grasser, T., Catthoor, F., Dobrovolny, P., Zuber, P., Wirth, G., Groeseneken, G. (2011).
Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 5), Phoenix. (reposiTUm)

238.   Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
In GADEST 2011: Abstract Booklet (p. 153), Loipersdorf, Austria, Austria. (reposiTUm)

237.   Grasser, T. (2011).
Charge Trapping in Oxides From RTN to BTI.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 128), Phoenix. (reposiTUm)

236.   Southwick III, R., Purnell, S., Rapp, B., Thompson, R., Pugmire, S., Kaczer, B., Grasser, T., Knowlton, B. (2011).
Cryogenic to Room Temperature Effects of NBTI in High-K PMOS Devices.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 12–16), California. (reposiTUm)

235.   Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Grasser, T., Hoffmann, T., Groeseneken, G. (2011).
From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation.
In 2011 Symposium on VLSI Technology Digest of Technical Papers (p. 2), Honolulu, Austria. (reposiTUm)

234.   Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M. (2011).
Impact of Gate Poly Doping and Oxide Thickness on the N- And PBTI in MOSFETs.
In Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1530–1534), Bordeaux, France. (reposiTUm)

233.   Tyaginov, S., Starkov, I., Jungemann, C., Enichlmair, H., Park, J., Grasser, T. (2011).
Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 151–154), Montreux, Austria. (reposiTUm)

232.   Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T. (2011).
Modeling of DCIV Recombination Currents Using a Multistate Multiphonon Model.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–31), California. (reposiTUm)

231.   Schanovsky, F., Baumgartner, O., Grasser, T. (2011).
Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035038 (reposiTUm)

230.   Schanovsky, F., Grasser, T. (2011).
On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 17–21), California. (reposiTUm)

229.   Rupp, K., Grasser, T., Jüngel, A. (2011).
On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131667 (reposiTUm)

228.   Franco, J., Kaczer, B., Eneman, G., Roussel, P., Cho, M., Mitard, J., Witters, L., Hoffmann, T., Groeseneken, G., Crupi, F., Grasser, T. (2011).
On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and Their Implications in Si<inf>0.45</Inf>Ge<inf>0.55</Inf> pMOSFETs.
In 2011 International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2011.5784545 (reposiTUm)

227.   Rupp, K., Grasser, T., Jüngel, A. (2011).
Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6034963 (reposiTUm)

226.   Tyaginov, S., Starkov, I., Enichlmair, H., Park, J., Jungemann, C., Grasser, T. (2011).
Physics-Based Hot-Carrier Degradation Modeling.
In Meet. Abstr. - Electrochem. Soc. 2011", (2011) (p. 1), Montreal, Canada. (reposiTUm)

225.   Hehenberger, P., Goes, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T. (2011).
Quantum-Mechanical Modeling of NBTI in High-K SiGe MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035036 (reposiTUm)

224.   Kaczer, B., Toledano-Luque, M., Franco, J., Grasser, T., Roussel, P., Camargo, V., Mahato, S., Simoen, E., Catthoor, F., Wirth, G., Groeseneken, G. (2011).
Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (p. 32), California. (reposiTUm)

223.   Toledano-Luque, M., Kaczer, B., Roussel, P., Grasser, T., Wirth, G., Franco, J., Vrancken, C., Horiguchi, N., Groeseneken, G. (2011).
Response of a Single Trap to AC Negative Bias Temperature Stress.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 8), Phoenix. (reposiTUm)

222.   Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011).
Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage N-Mosfet.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035065 (reposiTUm)

221.   Franco, J., Kaczer, B., Eneman, G., Roussel, P., Grasser, T., Mitard, J., Ragnarsson, L., Cho, M., Witters, L., Chiarella, T., Togo, M., Wang, W., Hikavyy, A., Loo, R., Horiguchi, N., Groeseneken, G. (2011).
Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131580 (reposiTUm)

220.   Grasser, T., Aichinger, T., Pobegen, G., Reisinger, H., Wagner, P., Franco, J., Nelhiebel, M., Kaczer, B. (2011).
The 'Permanent' Component of NBTI: Composition and Annealing.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 9), Phoenix. (reposiTUm)

219.   Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., Schlünder, C. (2011).
Understanding and Modeling AC BTI.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 8), Phoenix. (reposiTUm)

218.   Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T. (2011).
Understanding Temperature Acceleration for NBTI.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131623 (reposiTUm)

217.   Bukhori, M., Grasser, T., Kaczer, B., Reisinger, H., Asenov, A. (2010).
&Amp;#x2018;Atomistic&#x2019; Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706490 (reposiTUm)

216.   Franco, J., Kaczer, B., Eneman, G., Mitard, J., Stesmans, A., Afanas'ev, V., Kauerauf, T., Roussel, P., Toledano-Luque, M., Cho, M., Degraeve, R., Grasser, T., Ragnarsson, L., Witters, L., Tseng, J., Takeoka, S., Wang, W., Hoffmann, T., Groeseneken, G. (2010).
6&#x00C5; EOT Si<inf>0.45</Inf>Ge<inf>0.55</Inf> pMOSFET With Optimized Reliability (V<inf>DD</Inf>=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703292 (reposiTUm)

215.   Rupp, K., Grasser, T., Jüngel, A. (2010).
A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In Proceedings of the Junior Scientist Conference 2010 (pp. 7–8), Vienna, Austria. (reposiTUm)

214.   Schlünder, C., Reisinger, H., Gustin, W., Grasser, T. (2010).
A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery.
In GMM- Fachbericht (pp. 33–40), Wildbad Kreuth. (reposiTUm)

213.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677989 (reposiTUm)

212.   Starkov, I., Tyaginov, S., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 139–144), Singapore. (reposiTUm)

211.   Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010).
Charge Trapping and the Negative Bias Temperature Instability.
In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm)

210.   Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T. (2010).
Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1073–1077), Phoenix. (reposiTUm)

209.   Starkov, I., Tyaginov, S., Enichlmair, H., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Ceric, H., Grasser, T. (2010).
HC Degradation Model: Interface State Profile-Simulations vs. Experiment.
In Book of Abstracts (p. 128), Catania. (reposiTUm)

208.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Hole Capture Into Oxide Defects in MOS Structures From First Principles.
In Abstract Book (p. 435), Berlin. (reposiTUm)

207.   Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 341–345), Singapore. (reposiTUm)

206.   Aichinger, T., Puchner, S., Nelhiebel, M., Grasser, T., Hutter, H. (2010).
Impact of Hydrogen on Recoverable and Permanent Damage Following Negative Bias Temperature Stress.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1063–1068), Phoenix. (reposiTUm)

205.   Franco, J., Kaczer, B., Cho, M., Eneman, G., Groeseneken, G., Grasser, T. (2010).
Improvements of NBTI Reliability in SiGe P-FETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1082–1085), Phoenix. (reposiTUm)

204.   Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling.
In Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 3), Maastricht. (reposiTUm)

203.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Mulit-Phonon Hole-Trapping From First-Principles.
In Book of Abstracts (p. 54), Catania. (reposiTUm)

202.   Grasser, T., Aichinger, T., Reisinger, H., Franco, J., Wagner, P., Nelhiebel, M., Ortolland, C., Kaczer, B. (2010).
On the &Amp;#x2018;permanent&#x2019; Component of NBTI.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706472 (reposiTUm)

201.   Kaczer, B., Grasser, T., Roussel, P., Franco, J., Degraeve, R., Ragnarsson, L., Simoen, E., Groeseneken, G., Reisinger, H. (2010).
Origin of NBTI Variability in Deeply Scaled pFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 26–32), Phoenix. (reposiTUm)

200.   Wagner, P., Grasser, T., Reisinger, H., Kaczer, B. (2010).
Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters From Time Dependent Defect Spectroscopy.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 134–138), Singapore. (reposiTUm)

199.   Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, P., Groeseneken, G. (2010).
Recent Trends in Bias Temperature Instability.
In Book of Abstracts (p. 55), Catania. (reposiTUm)

198.   Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010).
Recent Advances in Understanding the Bias Temperature Instability.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm)

197.   Hehenberger, P., Reisinger, H., Grasser, T. (2010).
Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706473 (reposiTUm)

196.   Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H. (2010).
Recovery-Free Electron Spin Resonance Observations of NBTI Degradation.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 43–49), Phoenix. (reposiTUm)

195.   Rupp, K., Grasser, T., Jüngel, A. (2010).
System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604542 (reposiTUm)

194.   Toledano-Luque, M., Kaczer, B., Roussel, P., Grasser, T., Groeseneken, G. (2010).
Temperature Dependence of the Emission and Capture Times of SiON Individual Traps After Positive Bias Temperature Stress.
In Book of Abstracts (p. 28), Catania. (reposiTUm)

193.   Reisinger, H., Grasser, T., Schlunder, C., Gustin, W. (2010).
The Statistical Analysis of Individual Defects Constituting NBTI and Its Implications for Modeling DC- And AC-Stress.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 7–15), Phoenix. (reposiTUm)

192.   Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 16–25), Phoenix. (reposiTUm)

191.   Reisinger, H., Grasser, T., Hofmann, K., Gustin, W., Schlünder, C. (2010).
The Impact of Recovery on BTI Reliability Assessments.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706474 (reposiTUm)

190.   Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2010).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_52 (reposiTUm)

189.   Goes, W., Grasser, T., Karner, M., Kaczer, B. (2009).
A Model for Switching Traps in Amorphous Oxides.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290226 (reposiTUm)

188.   Reisinger, H., Grasser, T., Schlünder, C. (2009).
A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 30–35), S. Lake Tahoe. (reposiTUm)

187.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P., Nelhiebel, M. (2009).
A Two-Stage Model for Negative Bias Temperature Instability.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 33–44), Phoenix. (reposiTUm)

186.   Bindu, B., Gös, W., Kaczer, B., Grasser, T. (2009).
Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 93–96), S. Lake Tahoe. (reposiTUm)

185.   Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009).
Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 311–314), Montreux, Austria. (reposiTUm)

184.   Grasser, T., Kaczer, B. (2009).
Critical Modeling Issues in Negative Bias Temperature Instability.
In Meeting Abstracts MA 2009-01 (p. 793), San Francisco. (reposiTUm)

183.   Tyaginov, S., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., Stimpfl, F. (2009).
Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 514–522), Phoenix. (reposiTUm)

182.   Hehenberger, P., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M. (2009).
Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 1033–1038), Phoenix. (reposiTUm)

181.   Starkov, I., Tyaginov, S., Grasser, T. (2009).
Green's Function Asymptotic in Two-Layered Periodic Medium.
In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 111–112), Minsk. (reposiTUm)

180.   Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009).
Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate.
In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

179.   Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009).
Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics.
In Proceedings of the 2009 MRS Spring Meeting, San Francisco. (reposiTUm)

178.   Kaczer, B., Grasser, T., Martin-Martinez, J., Simoen, E., Aoulaiche, M., Roussel, P., Groeseneken, G. (2009).
NBTI From the Perspective of Defect States With Widely Distributed Time Scales.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 55–60), Phoenix. (reposiTUm)

177.   Aichinger, T., Nelhiebel, M., Grasser, T. (2009).
On the Temperature Dependence of NBTI Recovery.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (p. 1), Phoenix. (reposiTUm)

176.   Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009).
On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress.
In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 4), Maastricht. (reposiTUm)

175.   Southwick III, R., Knowlton, B., Kaczer, B., Grasser, T. (2009).
On the Thermal Activation of Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 36–41), S. Lake Tahoe. (reposiTUm)

174.   Wagner, P., Aichinger, T., Grasser, T., Nelhiebel, M., Vandamme, L. (2009).
Possible Correlation Between Flicker Noise and Bias Temperature Stress.
In Proceedings of the 20th International Conference on Noise and Fluctuations (pp. 621–624), Salamanca, Spanien, Austria. (reposiTUm)

173.   Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009).
Si-O Bond-Breakage Energetics Under Consideration of the Whole Crystal.
In Proceedings of the International Semiconductor Technology Conference, China Semiconductor Technology International Conference (p. 84), Shanghai. (reposiTUm)

172.   Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009).
Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091156 (reposiTUm)

171.   Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B. (2009).
Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise.
In 2009 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2009.5424235 (reposiTUm)

170.   Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2009).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93), Sozopol, Bulgaria. (reposiTUm)

169.   Aichinger, T., Nelhiebel, M., Grasser, T. (2009).
Unambiguous Identification of the NBTI Recovery Mechanism Using Ultra-Fast Temperature Changes.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2–7), Phoenix. (reposiTUm)

168.   Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H. (2009).
What Triggers NBTI? An "On the Fly" Electron Spin Resonance Approach.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 42–45), S. Lake Tahoe. (reposiTUm)

167.   Gös, W., Karner, M., Sverdlov, V., Grasser, T. (2008).
A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics.
In Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 249–254), Singapore. (reposiTUm)

166.   Grasser, T., Kaczer, B., Gös, W. (2008).
An Energy-Level Perspective of Bias Temperature Instability.
In Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

165.   Vasicek, M., Cervenka, J., Karner, M., Grasser, T. (2008).
Consistent Higher-Order Transport Models for SOI MOSFETs.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648254 (reposiTUm)

164.   Grasser, T., Kaczer, B., Aichinger, T., Gös, W., Nelhiebel, M. (2008).
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-K Gate Stacks.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 91–95), S. Lake Tahoe. (reposiTUm)

163.   Goes, W., Karner, M., Tyaginov, S., Hehenberger, P., Grasser, T. (2008).
Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648239 (reposiTUm)

162.   Grasser, T., Goes, W., Kaczer, B. (2008).
Modeling Bias Temperature Instability During Stress and Recovery.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648238 (reposiTUm)

161.   Grasser, T. (2008).
Negative Bias Temperature Instability: Modeling Challenges and Perspectives.
In 2008 Reliability Physics Tutorial Notes (pp. 113–120), Phoenix. (reposiTUm)

160.   Reisinger, H., Vollertsen, R., Wagner, P., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C. (2008).
The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), S. Lake Tahoe. (reposiTUm)

159.   Grasser, T. (2008).
Towards Understanding Negative Bias Temperature Instability.
In 2008 IEEE International Integrated Reliability Workshop Final Report. https://doi.org/10.1109/irws.2008.4796110 (reposiTUm)

158.   Kaczer, B., Grasser, T., Roussel, P., Martin-Martinez, J., O´Connor, R., O´Sullivan, B., Groeseneken, G. (2008).
Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 20–27), Phoenix. (reposiTUm)

157.   Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T. (2007).
A 2d-Non-Parabolic Six Moments Model.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

156.   Grasser, T., Wagner, P., Hehenberger, P., Gös, W., Kaczer, B. (2007).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11), S. Lake Tahoe. (reposiTUm)

155.   Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., Kosina, H. (2007).
Adaptive Energy Integration of Non-Equilibrium Green's Functions.
In NSTI Nanotech Proceedings (pp. 145–148), Anaheim, Austria. (reposiTUm)

154.   Kosina, H., Triebl, O., Grasser, T. (2007).
Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 317–320), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_76 (reposiTUm)

153.   Gös, W., Grasser, T. (2007).
Charging and Discharging of Oxide Defects in Reliability Issues.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–32), S. Lake Tahoe. (reposiTUm)

152.   Gös, W., Grasser, T. (2007).
First-Principles Investigation on Oxide Trapping.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 157–160), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_38 (reposiTUm)

151.   Triebl, O., Grasser, T. (2007).
Investigation of Vector Discretization Schemes for Box Volume Methods.
In NSTI Nanotech Proceedings (pp. 61–64), Anaheim, Austria. (reposiTUm)

150.   Grabinski, W., Grasser, T., Gildenblat, G., Smit, G., Bucher, M., Aarts, A., Tajic, A., Chauhan, Y., Napieralski, A., Fjeldly, T., Iniguez, B., Iannaccone, G., Kayal, M., Posch, W., Wachutka, G., Prégaldiny, F., Lallement, C., Lemaitre, L. (2007).
MOS-AK: Open Compact Modeling Forum.
In The 4th International Workshop on Compact Modeling (pp. 1–11), Pacifico Yokohama, Japan. (reposiTUm)

149.   Vasicek, M., Karner, M., Ungersboeck, E., Wagner, M., Kosina, H., Grasser, T. (2007).
Modeling of Macroscopic Transport Parameters in Inversion Layers.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 201–204), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_48 (reposiTUm)

148.   Grasser, T., Kaczer, B. (2007).
Negative Bias Temperature Instability: Recoverable Versus Permanent Degradation.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 127–130), Montreux, Austria. (reposiTUm)

147.   Vasicek, M., Cervenka, J., Karner, M., Wagner, M., Grasser, T. (2007).
Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 96–97), Urbana-Champaign, IL, USA. (reposiTUm)

146.   Sverdlov, V., Kosina, H., Grasser, T., Selberherr, S. (2007).
Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730425 (reposiTUm)

145.   Grasser, T., Kaczer, B., Hehenberger, P., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C. (2007).
Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability.
In 2007 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2007.4419069 (reposiTUm)

144.   Grasser, T., Gös, W., Sverdlov, V., Kaczer, B. (2007).
The Universality of NBTI Relaxation and Its Implications for Modeling and Characterization.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 268–280), Phoenix. (reposiTUm)

143.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T. (2006).
A Computational Framework for Topological Operations.
In Proceedings of the PARA Conference (p. 57), Umea. (reposiTUm)

142.   Schwaha, P., Heinzl, R., Spevak, M., Grasser, T. (2006).
A Generic Approach to Scientific Computing.
In ICCAM 2006 Abstracts of Talks (p. 137), Leuven. (reposiTUm)

141.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S. (2006).
A Generic Discretization Library.
In OOPSLA Proceedings (pp. 95–100), Portland. (reposiTUm)

140.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD.
In NSTI Nanotech Proceedings (pp. 526–529), Anaheim, Austria. (reposiTUm)

139.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
A High Performance Generic Scientific Simulation Environment.
In Proceedings of the PARA Conference (p. 61), Umea. (reposiTUm)

138.   Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., Selberherr, S. (2006).
A Multi-Purpose Optimization Framework for TCAD Applications.
In ICCAM 2006 Abstracts of Talks (p. 76), Leuven. (reposiTUm)

137.   Karner, M., Wagner, M., Grasser, T., Kosina, H. (2006).
A Physically Based Quantum Correction Model for DG MOSFETs.
In San Francisco 2006 MRS Meeting Abstracts (pp. 104–105), San Francisco. (reposiTUm)

136.   Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S., Grasser, T., Selberherr, S. (2006).
A Tensorial High-Field Electron Mobility Model for Strained Silicon.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73), Princeton. (reposiTUm)

135.   Schwaha, P., Heinzl, R., Spevak, M., Grasser, T. (2006).
Advanced Equation Processing for TCAD.
In Proceedings of the PARA Conference (p. 64), Umea. (reposiTUm)

134.   Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., Selberherr, S. (2006).
An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications.
In Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems (pp. 239–244), Nice. (reposiTUm)

133.   Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., Selberherr, S. (2006).
Analytical Modeling of Electron Mobility in Strained Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282833 (reposiTUm)

132.   Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., Selberherr, S. (2006).
Applications of Two- And Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 4), Tehran. (reposiTUm)

131.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T. (2006).
Automatic Linearization Using Functional Programming for Scientific Computing.
In ICCAM 2006 Abstracts of Talks (p. 147), Leuven. (reposiTUm)

130.   Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T. (2006).
Comparison of Deposition Models for TEOS CVD Process.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts (pp. 158–159), Catania. (reposiTUm)

129.   Heinzl, R., Schwaha, P., Spevak, M., Grasser, T. (2006).
Concepts for High Performance Generic Scientific Computing.
In 5th Mathmod Vienna Proceedings (pp. 4-1–4-9), Wien, Austria. (reposiTUm)

128.   Wagner, M., Span, G., Holzer, S., Grasser, T. (2006).
Design Optimization of Large Area Si/SiGe Thermoelectric Generators.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282918 (reposiTUm)

127.   Dhar, S., Ungersböck, S., Kosina, H., Grasser, T., Selberherr, S. (2006).
Electron Mobility Model for #Lt110> Stressed Si Including Strain-Dependent Mass.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154), Honolulu. (reposiTUm)

126.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
High Performance Process and Device Simulation With a Generic Environment.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 4), Tehran. (reposiTUm)

125.   Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R. (2006).
Influence of Interface and Oxide Traps on Negative Bias Temperature Instability.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 163–164), Honolulu. (reposiTUm)

124.   Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R. (2006).
Investigation of NBTI Recovery During Measurement.
In San Francisco 2006 MRS Meeting Abstracts (pp. 110–111), San Francisco. (reposiTUm)

123.   Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T. (2006).
Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 365–370), Playa del Carmen. (reposiTUm)

122.   Grasser, T., Gös, W., Kaczer, B. (2006).
Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 5–10), S. Lake Tahoe. (reposiTUm)

121.   Grasser, T., Selberherr, S. (2006).
Modeling of Negative Bias Temperature Instability.
In Abstracts 7th Symposium Diagnostics, Yield: Advanced Silicon Devices and Technologies for ULSI ERA (pp. 1–2), Warszawa. (reposiTUm)

120.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
Multidimensional and Multitopological TCAD With a Generic Scientific Simulation Environment.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 173–176), Playa del Carmen. (reposiTUm)

119.   Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R. (2006).
Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts (pp. 96–97), Catania. (reposiTUm)

118.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., Selberherr, S. (2006).
Performance Analysis for High-Precision Interconnect Simulation.
In The 2006 European Simulation and Modelling Conference (pp. 113–116), Porto, Austria. (reposiTUm)

117.   Heinzl, R., Schwaha, P., Spevak, M., Grasser, T. (2006).
Performance Aspects of a DSEL for Scientific Computing With C++.
In Proceedings of the POOSC Conference (pp. 37–41), Nantes. (reposiTUm)

116.   Wagner, M., Span, G., Holzer, S., Triebl, O., Grasser, T. (2006).
Power Output Improvement of SiGe Thermoelectric Generators.
In Meeting Abstracts 2006 Joint International Meeting (p. 1), Honolulu, Austria. (reposiTUm)

115.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, K. (2006).
Process and Device Simulation With a Generic Scientific Simulation Environment.
In 2006 25th International Conference on Microelectronics, Beograd. https://doi.org/10.1109/icmel.2006.1650996 (reposiTUm)

114.  M. Wagner, T. Grasser, M. Karner, H. Kosina:
"Quantum Correction for DG MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 87 - 88.

113.   Sverdlov, V., Grasser, T. (2006).
Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 29–30), Urbana-Champaign, IL, USA. (reposiTUm)

112.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T. (2006).
Simulation of Microelectronic Structures Using a Posteriori Error Estimation and Mesh Optimization.
In 5th Mathmod Vienna Proceedings (pp. 5-1–5-8), Wien, Austria. (reposiTUm)

111.  T. Grasser, R. Entner, O. Triebl, H. Enichlmair:
"TCAD Modeling of Negative Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; 330 - 333. https://doi.org/10.1109/SISPAD.2006.282902

110.   Span, G., Wagner, M., Holzer, S., Grasser, T. (2006).
Thermoelectric Power Conversion Using Generation of Electron-Hole Pairs in Large Area P-N Junctions.
In International Conference on Thermoelectrics (pp. 23–28), Vienna, Austria. (reposiTUm)

109.   Wagner, M., Span, G., Grasser, T. (2006).
Thermoelectric Power Generation Using Large Area Si/SiGe Pn-Junctions With Varying Ge-Content.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 216–217), Princeton. (reposiTUm)

108.   Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S. (2006).
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157), Singapore. (reposiTUm)

107.  M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 255 - 256.

106.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2006).
VSP-A Gate Stack Analyzer.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102), Catania. (reposiTUm)

105.   Triebl, O., Grasser, T. (2006).
Vector Discretization Schemes Based on Unstructured Neighbourhood Information.
In CAS 2006 Proceedings Vol. 2 (pp. 337–340), Sinaia. (reposiTUm)

104.   Kosina, H., Sverdlov, V., Grasser, T. (2006).
Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282908 (reposiTUm)

103.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2005).
A Novel Technique for Coupling Three Dimensional Mesh Adaption With an a Posteriori Error Estimator.
In 2005 PhD Research in Microelectronics and Electronics (pp. 175–178), Lausanne, Austria. (reposiTUm)

102.   Heinzl, R., Schwaha, P., Spevak, M., Grasser, T. (2005).
Adaptive Mesh Generation for TCAD With Guaranteed Error Bounds.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 425–429), Porto, Austria. (reposiTUm)

101.   Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S. (2005).
Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201504 (reposiTUm)

100.   Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., Selberherr, S. (2005).
Comprehensive Analysis of Vacancy Dynamics Due to Electromigration.
In Proceedings of the 12th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 100–103), Singapore. (reposiTUm)

99.   Schwaha, P., Heinzl, R., Spevak, M., Grasser, T. (2005).
Coupling Three-Dimensional Mesh Adaptation With an a Posteriori Error Estimator.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201516 (reposiTUm)

98.   Spevak, M., Grasser, T. (2005).
Discretisation Schemes for Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 474–478), Porto, Austria. (reposiTUm)

97.   Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B. (2005).
Failure of Macroscopic Transport Models in Nanoscale Devices Near Equilibrium.
In NSTI Nanotech Technical Proceedings (pp. 25–28), Anaheim, Austria. (reposiTUm)

96.   Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T. (2005).
Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 469–473), Porto, Austria. (reposiTUm)

95.   Heinzl, R., Grasser, T. (2005).
Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201510 (reposiTUm)

94.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices.
In NSTI Nanotech Technical Proceedings (pp. 45–48), Anaheim, Austria. (reposiTUm)

93.   Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., Selberherr, S. (2005).
Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process.
In 2005 PhD Research in Microelectronics and Electronics (pp. 279–282), Lausanne, Austria. (reposiTUm)

92.   Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., Selberherr, S. (2005).
Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts.
In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640), Wien, Austria. (reposiTUm)

91.   Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S. (2005).
Level Set Method Based General Topography Simulator and Its Application in Interconnect Processes.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon (pp. 139–142), Bologna, Austria. (reposiTUm)

90.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Modeling of Tunneling Currents for Highly Degraded CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201512 (reposiTUm)

89.   Wagner, M., Karner, M., Grasser, T. (2005).
Quantum Correction Models for Modern Semiconductor Devices.
In Proceedings of the XIII International Workshop on Semiconductor Devices (pp. 458–461), New Dehli. (reposiTUm)

88.   Span, G., Wagner, M., Grasser, T. (2005).
Thermoelectric Power Generation Using Large Area Pn-Junctions.
In The 3rd European Conference on Thermoelectrics Proceedings ECT2005 (pp. 72–75), Nancy, Austria. (reposiTUm)

87.   Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S. (2005).
Three-Dimensional State-Of-The-Art Topography Simulation.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 430–432), Porto, Austria. (reposiTUm)

86.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., Selberherr, S. (2005).
Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis.
In NSTI Nanotech Technical Proceedings (pp. 620–623), Anaheim, Austria. (reposiTUm)

85.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S. (2005).
Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress.
In VLSI Circuits and Systems II (pp. 380–387), Sevilla, Spain. https://doi.org/10.1117/12.608414 (reposiTUm)

84.  R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; 114 - 117.

83.  T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 36 - 37. https://doi.org/10.1109/IWCE.2004.1407308

82.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

81.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 295 - 298. https://doi.org/10.1007/978-3-7091-0624-2_69

80.  T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 1 - 8. https://doi.org/10.1007/978-3-7091-0624-2_1

79.  S. Wagner, T. Grasser, S. Selberherr:
"Benchmarking Linear Solvers with Semiconductor Simulation Examples";
Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 2004-06-30 - 2004-07-02; in: "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 pages.

78.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Concepts and Implementation of an Advanced Equation Assembly Module";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2004-07-18 - 2004-07-21; in: "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2; 150 - 155.

77.  W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

76.  S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin (invited); 2004-06-24 - 2004-06-26; in: "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7; 36 - 41.

75.  S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493.

74.  T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
"Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77.

73.  R. Kosik, T. Grasser, R. Entner, K. Dragosits:
"On the Highest Order Moment Closure Problem";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; 118 - 120.

72.  T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 109 - 112. https://doi.org/10.1007/978-3-7091-0624-2_26

71.  S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
"Optimization and Inverse Modeling for TCAD Applications";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116.

70.  S. Wagner, T. Grasser, S. Selberherr:
"Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 351 - 354. https://doi.org/10.1007/978-3-7091-0624-2_83

69.  S. Wagner, T. Grasser, S. Selberherr:
"Physical Modeling of Semiconductor Devices for Microwave Applications";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

68.  T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
"SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477.

67.  H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 331 - 334. https://doi.org/10.1007/978-3-7091-0624-2_78

66.   Sheikholeslami, A., Heitzinger, C., Al-Ani, E., Heinzl, R., Grasser, T., Selberherr, S. (2004).
Three-Dimensional Surface Evolution Using a Level Set Method.
In Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris, Austria. (reposiTUm)

65.  A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
"Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
Talk: International Conference on Microelectronics (MIEL), Nis; 2004-05-16 - 2004-05-19; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; 241 - 244. https://doi.org/10.1109/ICMEL.2004.1314606

64.  S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 83 - 84.

63.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Generally Applicable Approach for Advanced Equation Assembling";
Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 2003-11-03 - 2003-11-05; in: "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6; 494 - 499.

62.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Simulator Module for Advanced Equation Assembling";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 55 - 64.

61.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced Equation Assembling Techniques for Numerical Simulators";
Talk: European Simulation and Modeling Conference (ESMC), Naples; 2003-10-27 - 2003-10-29; in: "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x; 390 - 394.

60.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; 48 - 51.

59.  T. Grasser:
"Closure Relations for Macroscopic Transport Models";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington (invited); 2003-12-10 - 2003-12-12; in: "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4; 504 - 505.

58.  A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; 131 - 134.

57.  J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 377 - 382.

56.  S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in: "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202; 263 - 268.

55.  J.M. Park, T. Grasser, S. Selberherr:
"High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; 273 - 282.

54.  T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; 552 - 556.

53.  S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 836 - 838.

52.  S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 383 - 388.

51.  R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters Using Inverse Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 363 - 366.

50.  T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 63 - 66. https://doi.org/10.1109/SISPAD.2003.1233638

49.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

48.  T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; 105 - 108.

47.  T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 581 - 584.

46.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 235 - 238. https://doi.org/10.1109/SISPAD.2002.1034560

45.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"An Impact Ionization Model Including an Explicit Cold Carrier Population";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 572 - 575.

44.  R. Klima, T. Grasser, S. Selberherr:
"Controlling Scheme of the Device Simulator MINIMOS-NT";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; 80 - 84.

43.  V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in: "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3; 303 - 306.

42.  T. Grasser, A. Gehring, S. Selberherr:
"Macroscopic Transport Models for Microelectronics Devices";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (invited); 2002-07-14 - 2002-07-18; in: "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1; 223 - 228.

41.  A. Gehring, T. Grasser, S. Selberherr:
"Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 560 - 563.

40.  T. Grasser, A. Gehring, S. Selberherr:
"Recent Advances in Transport Modeling for Miniaturized CMOS Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba (invited); 2002-04-17 - 2002-04-19; in: "Proceedings of the ICCDCS 2002", D027 (2002), ISBN: 0-7803-7380-4; 1 - 8.

39.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 195 - 198. https://doi.org/10.1109/SISPAD.2002.1034550

38.  S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in: "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0; 50 - 55. https://doi.org/10.1109/EDMO.2002.1174929

37.  R. Klima, T. Grasser, S. Selberherr:
"The Control System of the Device Simulator MINIMOS-NT";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 281 - 284.

36.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
"The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 544 - 547.

35.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 428 - 431. https://doi.org/10.1007/978-3-7091-6244-6_99

34.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; 474 - 477.

33.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"A Simulation Study of Partially Depleted SOI MOSFETs";
Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in: "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1; 181 - 186.

32.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
"Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; 215 - 218.

31.  T. Grasser, H. Kosina, S. Selberherr:
"An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 46 - 49. https://doi.org/10.1007/978-3-7091-6244-6_10

30.   Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., Selberherr, S. (2001).
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 67), Urbana-Champaign, IL, USA. (reposiTUm)

29.  A. Wolf, T. Grasser, S. Selberherr:
"Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; 314 - 318.

28.  M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Boundary Condition Models for Terminal Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 152 - 155. https://doi.org/10.1007/978-3-7091-6244-6_34

27.  R. Klima, T. Grasser, S. Selberherr:
"Controlling TCAD Applications with an Object-Oriented Dynamic Database";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; 161 - 165.

26.  A. Gehring, T. Grasser, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in: "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263.

25.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko (invited); 2001-02-12 - 2001-02-17; in: "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8; 19 - 30.

24.  T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 54 - 57. https://doi.org/10.1007/978-3-7091-6244-6_12

23.  T. Grasser, S. Selberherr:
"Limitations of Hydrodynamic and Energy-Transport Models";
Talk: International Workshop on Processes of Semiconductor Devices, Delhi (invited); 2001-12-11 - 2001-12-15; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (ed.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; 584 - 591.

22.  J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"Numerical Study of Partial-SOI LDMOSFET Power Devices";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in: "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117.

21.  V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; 187 - 191. https://doi.org/10.1109/EDMO.2001.974305

20.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; 201 - 206. https://doi.org/10.1109/NANO.2001.966419

19.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
Talk: International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (ed.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; 664 - 667.

18.   Grasser, T. (2001).
Simulation of Semiconductor Devices and Circuits at High Frequencies.
In Proceedings of the GMe Forum (pp. 91–96), Wien, Austria. (reposiTUm)

17.  A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr:
"TCAD Analysis of Gain Cell Retention Time for SRAM Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 416 - 419. https://doi.org/10.1007/978-3-7091-6244-6_96

16.  T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Talk: Ultra Shallow Junctions Conference, Napa (invited); 2001-04-22 - 2001-04-26; in: "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), 4 - 11.

15.  T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 324 - 327. https://doi.org/10.1109/ESSDERC.2000.194780

14.  R. Klima, T. Grasser, T. Binder, S. Selberherr:
"Controlling TCAD Applications with a Dynamic Database";
Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 2000-11-06 - 2000-11-09; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; 103 - 112.

13.  T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Talk: International Semiconductor Conference (CAS), Sinaia (invited); 2000-10-10 - 2000-10-14; in: "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6; 43 - 52.

12.  T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 2000-05-14 - 2000-05-17; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2000), ISBN: 0-7803-5235-1; 35 - 42. https://doi.org/10.1109/ICMEL.2000.840528

11.  R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 74 - 77. https://doi.org/10.1109/SISPAD.2000.871210

10.  V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 608 - 611. https://doi.org/10.1109/ESSDERC.2000.194851

9.  T. Grasser, H. Kosina, S. Selberherr:
"Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 151 - 154. https://doi.org/10.1109/SISPAD.1999.799283

8.  R. Quay, R. Reuter, T. Grasser, S. Selberherr:
"Thermal Simulations of III/V HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x; 87 - 92.

7.  G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
"A Physically-Based Electron Mobility Model for Silicon Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 312 - 315. https://doi.org/10.1007/978-3-7091-6827-1_78

6.  T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Calibration of a Mobility Model for Quartermicron CMOS Devices";
Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; 75 - 77.

5.  T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Device Simulator Calibration for Quartermicron CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 93 - 96. https://doi.org/10.1007/978-3-7091-6827-1_26

4.  T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 247 - 250. https://doi.org/10.1007/978-3-7091-6827-1_62

3.  T. Grasser, S. Selberherr, K. Tsueno, H. Masuda:
"Mobility Parameter Tuning for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; 336 - 339.

2.  V. Palankovski, T. Grasser, S. Selberherr:
"SiGe HBT in Mixed-Mode Device and Circuit Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156.

1.  M. Knaipp, T. Grasser, S. Selberherr:
"A Physically Based Substrate Current Simulation";
Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 196 - 199.

Talks and Poster Presentations (without Proceedings-Entry)

53.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29).
Charged Instrinsic Defect States in Amorphous Si3N4
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

52.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30).
Intrinsic Charge Trapping Sites in Amorphous Si₃N₄
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

51.   Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022, September 12).
Epitaxial Growth of Crystalline CaF2 on Silicene by Molecular Beam Epitaxy
19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. (reposiTUm)

50.   Illarionov, Y., Knobloch, T., Uzlu, B., Sokolov, N. S., Lemme, M. C., Grasser, T. (2022).
Highly Stable GFETs With 2nm Crystalline CaF2 Insulators.
6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia, Non-EU. (reposiTUm)

49.   Knobloch, T., Grasser, T. (2022).
Scalable and Reliable Gate Insulators for 2D Material-Based FETs.
IEEE Latin America Electron Devices Conference (LAEDC 2022), Puebla, Mexico. (reposiTUm)

48.   Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2022).
Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs.
Graphne 2022, Aachen, Germany, EU. (reposiTUm)

47.   Illarionov, Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland, EU. (reposiTUm)

46.   Illarionov, Y., Banshchikov, A. G., Sokolov, N. S., Fedorov, V. V., Suturin, S. M., Vexler, M. I., Knobloch, T., Polyushkin, D. K., Mueller, T., Grasser, T. (2021).
Epitaxial Fluorides as a Universal Platform for More Moore and More Than Moore Electronics Based on 2D Materials.
Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia, Non-EU. (reposiTUm)

45.   Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019).
CaF2 Insulators for Ultrascaled 2D Field Effect Transistors.
Graphene Week, Delft, Netherlands, EU. (reposiTUm)

44.   Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019).
Reliability and Thermal Stability of MoS2 FETs With Ultrathin CaF2 Insulator.
IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA, Non-EU. (reposiTUm)

43.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

42.   Grasser, T. (2018).
Multiscale Reliability Modeling.
IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain, EU. (reposiTUm)

41.   Grasser, T. (2017).
Charge Trapping and Time-Dependent Variability in CMOS Transistors.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

40.   Grasser, T. (2017).
Charge Trapping and Time-Dependent Variability in Low-Voltage MOS Transistors.
Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan, Non-EU. (reposiTUm)

39.   Grasser, T. (2017).
Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

38.   Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017).
Reliability Perspective of 2D Electronics.
International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm)

37.   Ostermaier, C., Lagger, P. W., Reiner, M., Grill, A., Stradiotto, R., Pobegen, G., Grasser, T., Pietschnig, R., Pogany, D. (2017).
Review of Bias-Temperature Instabilities at the III-N/dielectric Interface.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

36.   Rupp, K., Jüngel, A., Grasser, T. (2015).
A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC.
Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA, Non-EU. (reposiTUm)

35.   Grasser, T. (2015).
Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation.
D2T Symposium, Tokyo, Japan, Non-EU. (reposiTUm)

34.   Grasser, T. (2015).
Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment.
CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland, EU. (reposiTUm)

33.   Grasser, T. (2015).
Oxide Defects in MOS Transistors: Characterization and Modeling.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

32.   Grasser, T. (2015).
Recent Progress in Understanding the Bias Temperature Instability: From Single Traps to Distributions.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

31.   Ostermaier, C., Lagger, P. W., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2015).
The Role of Electron Transport in the Charge Trapping at the III-N/dielectric Interface in AlGaN/GaN MIS-HEMT Structures.
Semiconductor Interface Specialists Conference, Arlington, VA, USA, Non-EU. (reposiTUm)

30.   Rupp, K., Bina, M., Morhammer, A., Grasser, T., Jüngel, A. (2015).
ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method.
Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany, EU. (reposiTUm)

29.   Grasser, T. (2014).
Bias Temperature Instability in CMOS Nanodevices.
SINANO Summer School, Bertinoro, Italy, EU. (reposiTUm)

28.   Grasser, T. (2014).
Characterization and Modeling of Charge Trapping and Hot Carrier Degradation.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

27.   Grasser, T. (2014).
Characterization and Modeling of Charge Trapping in CMOS Transistors.
International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy, EU. (reposiTUm)

26.   Grasser, T. (2012).
Aging in CMOS Devices: From Microscopic Physics to Compact Models.
The 2012 Forum on Specification, Design Languages, Vienna, Austria, Austria. (reposiTUm)

25.   Schanovsky, F., Grasser, T. (2012).
Bias Temperature Instabilities in Highly-Scaled MOSFETs.
2012 CMOS Emerging Technologies, Vancouver, BC Canada, Non-EU. (reposiTUm)

24.   Grasser, T. (2011).
Cause, Detection, and Impact of Charge Trapping on Aging.
VLSI Symposium Short Course, Kyoto, Japan, Non-EU. (reposiTUm)

23.   Grasser, T. (2011).
Modeling of Device Reliability.
Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland, EU. (reposiTUm)

22.   Grasser, T. (2011).
Oxide Defects: From Microscopic Physics to Compact Models.
SISPAD Workshop, Nürnberg, Germany, EU. (reposiTUm)

21.   Grasser, T. (2010).
Characterization and Modeling of the Negative Bias Temperature Instability.
VDE/VDI GMM Workshop “Stand und Perspektiven von SOI-Technologien und Anwendungen,” München, Austria. (reposiTUm)

20.   Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Degraeve, R., Franco, J., Kauerauf, T., Grasser, T., Groeseneken, G. (2010).
Depth Localization of Trapped Holes in SiON After Positive and Negative Gate Stress.
Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. (reposiTUm)

19.   Franco, J., Kaczer, B., Mitard, J., Eneman, G., Roussel, Ph. J., Crupi, F., Grasser, T., Witters, L., Hoffmann, T. Y., Groeseneken, G. (2010).
Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs.
Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. (reposiTUm)

18.   Grasser, T. (2010).
Recent Developments in Device Reliability Modeling.
MOS-AK ESSDERC Companion Workshop, Grenoble, Austria. (reposiTUm)

17.   Grasser, T. (2010).
Statistical Reliability in Nanoscale Devices.
SISPAD Workshop, Nürnberg, Germany, EU. (reposiTUm)

16.   Grasser, T., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., Kaczer, B. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

15.   Grasser, T. (2010).
Transport Modeling in Modern Semiconductor Devices.
CoMoN Workshop 2010, Tarragona, EU. (reposiTUm)

14.   Franco, J., Kaczer, B., Stesmans, A., Afanas´Ev, V., Martens, K., Aoulaiche, M., Grasser, T., Mitard, J., Groeseneken, G. (2009).
Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs.
40th Semiconductor Interface Specialists Conference (SISC), Washington, Non-EU. (reposiTUm)

13.   Grasser, T. (2009).
Physical Mechanisms and Modeling of the Bias Temperature Instability.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

12.   Grasser, T. (2009).
Understanding Negative Bias Temperature Instability in the Context of Hole Trapping.
International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland, EU. (reposiTUm)

11.   Grasser, T. (2008).
Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation.
3rd SINANO Device Modeling Summer School, Bertinoro, Italy, EU. (reposiTUm)

10.   Aichinger, T., Nelhiebel, M., Grasser, T. (2008).
On the Temperature Dependence of NBTI Recovery.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

9.   Martens, K., Kaczer, B., Grasser, T., De Jaeger, B., Meuris, M., Groeseneken, G., Maes, H. E. (2007).
Charge Pumping Charcaterization of Germanium MOSFETs.
Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. (reposiTUm)

8.   Grasser, T., Vasicek, M., Wagner, M. (2007).
Higher-Order Moment Models for Engineering Applications.
Equadiff, Wien, Austria. (reposiTUm)

7.   Grasser, T. (2005).
Higher-Order Moment Models for Engineering Applications.
Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. (reposiTUm)

6.   Grasser, T. (2005).
Mixed Mode Device/Circuit Simulation.
MOS-AK ESSDERC Companion Workshop, Grenoble, Austria. (reposiTUm)

5.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S. (2005).
Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress.
SPIE VLSI Circuits and Systems, Sevilla, Spain, Austria. (reposiTUm)

4.   Ayalew, T., Gehring, A., Grasser, T., Selberherr, S. (2004).
Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

3.   Wagner, S., Grasser, T., Selberherr, S. (2004).
Evaluation of Linear Solver Modules for Semiconductor Device Simulation.
International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara, Austria. (reposiTUm)

2.   Ayalew, T., Gehring, A., Park, J. M., Grasser, T., Selberherr, S. (2003).
Improving SiC Lateral DMOSFET Reliability Under High Field Stress.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

1.   Grasser, T. (2001).
Simulation of SOI-Devices.
VDE/VDI GMM Workshop “Stand und Perspektiven von SOI-Technologien und Anwendungen,” München, Austria. (reposiTUm)

Habilitation Theses

1.   Grasser, T. (2002).
Simulation of Miniaturized Semiconductor Devices
Technische Universität Wien. (reposiTUm)

Doctor's Theses (authored and supervised)

38.   Michl, J. D. (2022).
Charge Trapping and Variability in CMOS Technologies at Cryogenic Temperatures
Technische Universität Wien. https://doi.org/10.34726/hss.2022.105545 (reposiTUm)

37.   Schleich, C. (2022).
Modeling of Defect Related Reliability Phenomena in SiC Power-MOSFETs
Technische Universität Wien. https://doi.org/10.34726/hss.2022.105546 (reposiTUm)

36.   Knobloch, T. (2022).
On the Electrical Stability of 2D Material-Based Field-Effect Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2022.98523 (reposiTUm)

35.   Berens, J. V. (2021).
Carrier Mobility and Reliability of 4h-SiC Trench MOSFETs
Technische Universität Wien. https://doi.org/10.34726/hss.2021.86487 (reposiTUm)

34.   Ruch, B. (2021).
Hot-Carrier Degradation in Planar and Trench Si-MOSFETs
Technische Universität Wien. https://doi.org/10.34726/hss.2021.89105 (reposiTUm)

33.   Sharma, P. (2020).
Predictive and Efficient Modeling of Hot Carrier Degradation With Drift-Diffusion Based Carrier Transport Models
Technische Universität Wien. https://doi.org/10.34726/hss.2021.88962 (reposiTUm)

32.   Stampfer, B. (2020).
Advanced Electrical Characterization of Charge Trapping in MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2020.86423 (reposiTUm)

31.   Waschneck, K. A. (2020).
Modeling Bias Temperature Instability in Si and SiC MOSFETs Using Activation Energy Maps
Technische Universität Wien. https://doi.org/10.34726/hss.2020.84645 (reposiTUm)

30.   Jech, M. (2020).
The Physics of Non-Equilibrium Reliability Phenomena
Technische Universität Wien. https://doi.org/10.34726/hss.2020.85163 (reposiTUm)

29.  C Koller:
"The Role of Carbon in Creating Insulating Behavior in GaN-on-Si Buffers: A Physical Model";
Supervisor, Reviewer: D. Pogany, T. Grasser, T. Uren; Institut für Festkörperelektronik, 2019; oral examination: 2019-01-22.

28.   Rescher, G. (2018).
Behavior of SiC-MOSFETs Under Temperature and Voltage Stress
Technische Universität Wien. https://doi.org/10.34726/hss.2018.60783 (reposiTUm)

27.   Grill, A. (2018).
Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs
Technische Universität Wien. https://doi.org/10.34726/hss.2018.60228 (reposiTUm)

26.  G. Rzepa:
"Efficient Physical Modeling of Bias Temperature Instability";
Supervisor, Reviewer: T. Grasser, L. Larcher, F. Crupi; Institut für Mikroelektronik, 2018; oral examination: 2018-06-27. https://doi.org/10.34726/hss.2018.57326

25.  B. Ullmann:
"Mixed Negative Bias Temperature Instability and Hot-Carrier Stress";
Supervisor, Reviewer: T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018; oral examination: 2018-06-28. https://doi.org/10.34726/hss.2018.57328

24.  G.A. Rott:
"Negative Bias Temperature Instability and Hot-Carrier Degradation of 130 nm Technology Transistors including Recovery Effects";
Supervisor, Reviewer: T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018; oral examination: 2018-06-28.

23.  Y. Wimmer:
"Hydrogen Related Defects in Amorphous SiO2 and the Negative Bias Temperature Instability";
Supervisor, Reviewer: T. Grasser, M. Watkins, P. Mohn; Institut für Mikroelektronik, 2017; oral examination: 2017-11-27. https://doi.org/10.34726/hss.2017.51306

22.   Illarionov, Y. (2016).
Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2016.34580 (reposiTUm)

21.   Stradiotto, R. (2016).
Characterization of Electrically Active Defects at III-N/dielectric Interfaces
Technische Universität Wien. https://doi.org/10.34726/hss.2016.41581 (reposiTUm)

20.  M. Waltl:
"Experimental Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
Supervisor, Reviewer: T. Grasser, D. Schmitt-Landsiedel; Institut für Mikroelektronik, 2016; oral examination: 2016-09-09. https://doi.org/10.34726/hss.2016.38201

19.  R. Coppeta:
"Dislocation Modeling in III-Nitrides";
Supervisor, Reviewer: T. Grasser, A. Köck; Institut für Mikroelektronik, 2015; oral examination: 2016-06-15. https://doi.org/10.34726/hss.2015.30571

18.  M. Bina:
"Charge Transport Models for Reliability Engineering of Semiconductor Devices";
Supervisor, Reviewer: T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2014; oral examination: 2014-03-25. https://doi.org/10.34726/hss.2014.24463

17.   Schanovsky, F. (2013).
Atomistic Modeling in the Context of the Bias Temperature Instability
Technische Universität Wien. https://doi.org/10.34726/hss.2013.28781 (reposiTUm)

16.  I. Starkov:
"Comprehensive Physical Modeling of Hot-Carrier Induced Degradation";
Supervisor, Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013; oral examination: 2013-01-14.

15.   Pobegen, G. (2013).
Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling
Technische Universität Wien. https://doi.org/10.34726/hss.2013.11338322 (reposiTUm)

14.  Rui Huang:
"Stress and Microstructural Evolution of Electroplated Copper Films";
Supervisor, Reviewer: T. Grasser, G. Dehm; Institut für Mikroelektronik, 2013; oral examination: 2013-01-09.

13.  O. Triebl:
"Reliability Issues in High-Voltage Semiconductor Devices";
Supervisor, Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2012; oral examination: 2012-10-24. https://doi.org/10.34726/hss.2012.27576

12.  Ph. Hehenberger:
"Advanced Characterization of the Bias Temperature Instability";
Supervisor, Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011; oral examination: 2011-12-14. https://doi.org/10.34726/hss.2011.24894

11.  K. Rupp:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
Supervisor, Reviewer: T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2011; oral examination: 2011-12-19. https://doi.org/10.34726/hss.2011.24957

10.   Gös, W. (2011).
Hole Trapping and the Negative Bias Temperature Instability
Technische Universität Wien. https://doi.org/10.34726/hss.2011.25057 (reposiTUm)

9.   Aichinger, T. (2010).
On the Role of Hydrogen in Silicon Device Degradation and Metalization Processing
Technische Universität Wien. https://doi.org/10.34726/hss.2010.20283 (reposiTUm)

8.  M. Vasicek:
"Advanced Macroscopic Transport Models";
Supervisor, Reviewer: T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009; oral examination: 2009-10-12. https://doi.org/10.34726/hss.2009.17390

7.  R. Entner:
"Modeling and Simulation of Negative Bias Temperature Instability";
Supervisor, Reviewer: T. Grasser, G. Magerl; Institut für Mikroelektronik, 2007; oral examination: 2007-08-13. https://doi.org/10.34726/hss.2007.10123

6.  S. Holzer:
"Optimization for Enhanced Thermal Technology CAD Purposes";
Supervisor, Reviewer: T. Grasser, H. Schichl; Institut für Mikroelektronik, 2007; oral examination: 2007-06-28. https://doi.org/10.34726/hss.2007.8993

5.  M. Wagner:
"Simulation of Thermoelectric Devices";
Supervisor, Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2007; oral examination: 2007-12-18. https://doi.org/10.34726/hss.2007.06623909

4.  S. Wagner:
"Small-Signal Device and Circuit Simulation";
Supervisor, Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2005; oral examination: 2005-04-22. https://doi.org/10.34726/hss.2005.3091

3.   Kosik, R. (2004).
Numerical Challenges on the Road to NanoTCAD
Technische Universität Wien. https://doi.org/10.34726/hss.2004.1116 (reposiTUm)

2.   Cervenka, J. (2004).
Three-Dimensional Mesh Generation for Device and Process Simulation
Technische Universität Wien. https://doi.org/10.34726/hss.2004.1458 (reposiTUm)

1.   Grasser, T. (1999).
Mixed-Mode Device Simulation
Technische Universität Wien. https://doi.org/10.34726/hss.1999.02581881 (reposiTUm)

Diploma and Master Theses (authored and supervised)

30.   Kratzmann, M. (2021).
Development of a Low-Noise CV Measurement Module for Defect-Spectroscopy of MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2021.78782 (reposiTUm)

29.   Weger, M. (2021).
Electric Characterization of SiC Trench MOSFETs With DLTS and Admittance Spectroscopy
Technische Universität Wien. https://doi.org/10.34726/hss.2021.91461 (reposiTUm)

28.  M. Weger:
"Elektrische Charakteriserung von SiC Trench MOSFETs mittels DLTS and Admittanz Spektroskopie";
Supervisor: T. Grasser; E360, 2021; final examination: 2021-06-17.

27.  M. Kratzmann:
"Entwicklung eines rauscharmen CV Messmoduls für die Defektspektroskopie von MOS Transistoren";
Supervisor: T. Grasser, M. Waltl; E360, 2021; final examination: 2021-11-18.

26.   Schleich, C. (2019).
Charakterisierung Und Modellierung Von SiC Transistoren
Technische Universität Wien. (reposiTUm)

25.   Fleischanderl, P. (2018).
Charakterisierung Von Hot Carrier Degradation in Siliziumtransistoren
Technische Universität Wien. (reposiTUm)

24.  A. Selinger:
"Lösung der Poisson Gleichung auf Supercomputern";
Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2018; final examination: 2018-06-13.

23.  D. Waldhör:
"Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects";
Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018; final examination: 2018-10-05.

22.   Selinger, A. (2018).
Solution of the Poisson Equation on Supercomputers
Technische Universität Wien. (reposiTUm)

21.   Bellini, M. (2017).
Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide
Technische Universität Wien. (reposiTUm)

20.   Huymajer, M. (2016).
Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS
Technische Universität Wien. https://doi.org/10.34726/hss.2016.33851 (reposiTUm)

19.   Knobloch, T. (2016).
Characterization and Physical Modeling of Degradation in MoS2 Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2016.39485 (reposiTUm)

18.  B. Stampfer:
"Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model";
Supervisor: T. Grasser, A. Grill; Institut für Mikroelektronik, 2016; final examination: 2016-01-22.

17.   Rzepa, G. (2013).
Microscopic Modeling of NBTI in MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2013.22838 (reposiTUm)

16.  M. Braitner:
"Erstellung und Verifikation von Modellen für Leistungs-MOSFETs für die quantitative EMV-Simulation";
Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2012; final examination: 2012-01-13.

15.   Waltl, M. (2011).
Change Point Detection in Time Dependent Defect Spectroscopy Data
Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-60036 (reposiTUm)

14.  P. Lagger:
"Scattering Operators for the Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2011; final examination: 2011-10-07.

13.  B. Schwarz:
"Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model";
Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011; final examination: 2011-06-17.

12.  M. Bina:
"Simulation of Interface States Generated During Stress in MOSFETs";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2010; final examination: 2010-04-23.

11.   Stanojević, Z. (2009).
Simulation of Carrier Transport in Ultra-Thin-Body Devices
Technische Universität Wien. (reposiTUm)

10.   Schanovsky, F. (2008).
Dispersive Transport Modeling Within the Multiple Trapping Framework
Technische Universität Wien. (reposiTUm)

9.  O. Baumgartner:
"Simulation of Quantum Transport Using the Non-Equilibrium Green´s Functions Formalism";
Supervisor: T. Grasser, M. Karner; Institut für Mikroelektronik, 2007; final examination: 2007-01-18.

8.   Wagner, M. (2004).
A Base Library for Full Band Monte Carlo Simulations
Technische Universität Wien. (reposiTUm)

7.   Karner, M. (2004).
Multi-Dimensional Simulation of Closed Quantum Systems
Technische Universität Wien. (reposiTUm)

6.   Spevak, M. (2004).
Simulation of Rotationally Symmetric Semiconductor Devices
Technische Universität Wien. (reposiTUm)

5.  R. Entner:
"Three-Dimensional Device Simulation with MINIMOS-NT Using the Wafer-State-Server";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2003.

4.  M. Bacher:
"Implementierung einer Client/Server-Architektur mit Graphischer Benutzeroberfläche als Verteilte Anwendung";
Supervisor: E. Langer, T. Grasser; Institut für Mikroelektronik, 2002.

3.   Wagner, S. (2001).
The Minimos-Nt Linear Equation Solving Module
Technische Universität Wien. (reposiTUm)

2.  M. Gritsch:
"Implementation of a Non-Parabolic Energy-Transport Model";
Supervisor: H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999.

1.  T. Grasser:
"Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

Scientific Reports

13.   Grasser, T., Karner, M., Kernstock, C., Kosina, H., Triebl, O. (2010).
Customized Software Development Report.
(reposiTUm)

12.   Rupp, K., Jüngel, A., Grasser, T. (2010).
Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors
(ASC Report 10/2010; pp. 1–32). Institute of Analysis and Scientific Computing, TU Wien. (reposiTUm)

11.   Grasser, T. (2010).
Verification and Validation of the Coupled HCI, NBTI Model for HV Devices.
(reposiTUm)

10.   Grasser, T. (2008).
Report on Coupled NBTI and HC Models for HV Devices.
(reposiTUm)

9.   Ceric, H., Grasser, T., Orio, R., Pourfath, M., Vasicek, M., Selberherr, S. (2008).
VISTA Status Report July 2008.
(reposiTUm)

8.   Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007).
3 Year Report 2005-2007.
(reposiTUm)

7.   Grützmacher, D., Dhar, S., Milovanovic, G., Grasser, T., Kosina, H. (2007).
Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits.
(reposiTUm)

6.   Vasicek, M., Grasser, T. (2007).
Higher-Order Macroscopic Transport Models
(No. P18316-N13). (reposiTUm)

5.   Grasser, T., Gritsch, M., Heitzinger, C., Hössinger, A., Selberherr, S. (2001).
VISTA Status Report December 2001.
(reposiTUm)

4.   Grasser, T., Hössinger, A., Kosik, R., Mlekus, R., Pyka, W., Stockinger, M., Selberherr, S. (1999).
VISTA Status Report December 1999.
(reposiTUm)

3.   Dragosits, K., Grasser, T., Strasser, R. (1999).
VISTA Status Report June 1999.
(reposiTUm)

2.   Dragosits, K., Grasser, T., Selberherr, S. (1998).
VISTA Status Report June 1998.
(reposiTUm)

1.   Grasser, T., Hössinger, A., Kirchauer, H., Knaipp, M., Martins, R., Plasun, R., Rottinger, M., Schrom, G., Selberherr, S. (1997).
VISTA Status Report December 1997.
(reposiTUm)