Publications Andreas Hössinger
84 records
| 21. | G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing"; Advances in Computational Mathematics, 45, (2019), 2029 - 2045 doi:10.1007/s10444-019-09683-z. BibTeX |
| 20. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub: "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics"; IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX |
| 19. | J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Materials Science Forum, 963, (2019), 180 - 183 doi:10.4028/www.scientific.net/MSF.963.180. BibTeX |
| 18. | L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Accelerating Flux Calculations Using Sparse Sampling"; Micromachines, 9, (invited) (2018), 1 - 17 doi:10.3390/mi9110550. BibTeX |
| 17. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide"; IEEE Transactions on Electron Devices, 65, (2018), 674 - 679 doi:10.1109/TED.2017.2786086. BibTeX |
| 16. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Materials Science Forum, 924, (2018), 192 - 195 doi:10.4028/www.scientific.net/MSF.924.192. BibTeX |
| 15. | V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide"; Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX |
| 14. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity"; Solid-State Electronics, 128, (invited) (2017), 141 - 147 doi:10.1016/j.sse.2016.10.029. BibTeX |
| 13. | P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr: "Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces"; Procedia Computer Science, 108, (2017), 245 - 254 doi:10.1016/j.procs.2017.05.067. BibTeX |
| 12. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation"; Journal of Physical Chemistry A, 121, (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983. BibTeX |
| 11. | V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation"; Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032. BibTeX |
| 10. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide"; Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688. BibTeX |
| 9. | J. Weinbub, A. Hössinger: "Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method"; Procedia Computer Science, 80, (2016), 2271 - 2275 doi:10.1016/j.procs.2016.05.408. BibTeX |
| 8. | J. Weinbub, A. Hössinger: "Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method"; Journal of Computational Electronics, 13, (2014), 877 - 884 doi:10.1007/s10825-014-0604-x. BibTeX |
| 7. | W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2129 - 2139 doi:10.1109/TCAD.2005.862750. BibTeX |
| 6. | C. Heitzinger, A. Hössinger, S. Selberherr: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Mathematics and Computers in Simulation, 66, (2004), 219 - 230 doi:10.1016/j.matcom.2003.11.010. BibTeX |
| 5. | T. Binder, A. Hössinger, S. Selberherr: "Rigorous Integration of Semiconductor Process and Device Simulators"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 1204 - 1214 doi:10.1109/TCAD.2003.816219. BibTeX |
| 4. | C. Heitzinger, A. Hössinger, S. Selberherr: "On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 879 - 883 doi:10.1109/TCAD.2003.814259. BibTeX |
| 3. | T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz: "Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures "; Concurrency and Computation: Practice and Experience, 13, (2001), 1 - 17. BibTeX |
| 2. | A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; IEICE Transactions on Electronics, E83-C, (2000), 1259 - 1266. BibTeX |
| 1. | A. Hössinger, E. Langer, S. Selberherr: "Parallelization of a Monte Carlo Ion Implantation Simulator"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 560 - 567 doi:10.1109/43.845080. BibTeX |
| 6. | L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Accelerating Flux Calculations Using Sparse Sampling"; in "Miniaturized Transistors", L. Filipovic, T. Grasser (ed); MDPI, (invited) 2019, ISBN: 978-3-03921-010-7, 176 - 192 doi:10.3390/books978-3-03921-011-4. BibTeX |
| 5. | P. Manstetten, L. Gnam, A. Hössinger, S. Selberherr, J. Weinbub: "Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme"; in "Lecture Notes in Computer Science", ICCS 2018, Y. Shi, H. Fu, Y. Tian, V. Krzhizhanovskaya, M. Lees, J. Dongarra, P. Sloot (ed); Springer, 2018, ISBN: 978-3-319-93698-7, 694 - 707 doi:10.1007/978-3-319-93698-7_53. BibTeX |
| 4. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes"; in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 120 - 123 doi:10.1109/ULIS.2016.7440067. BibTeX |
| 3. | V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations"; in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 226 - 229 doi:10.1109/ULIS.2016.7440094. BibTeX |
| 2. | R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr: "A Study of Boron Implantation into High Ge Content SiGe Alloys"; in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 667 - 676 doi:10.1149/1.2355862. BibTeX |
| 1. | R. Wittmann, A. Hössinger, S. Selberherr: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; in "SiGe: Materials, Processing, and Devices", issued by The Electrochemical Society; ECS Transactions, 2004, ISBN: 1-56677-420-9, 181 - 192. BibTeX |
| 51. | M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Construction of Extension Velocities for the Level-Set Method"; Talk: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 2019-09-08 - 2019-09-11; in "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), 42. BibTeX |
| 50. | M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 335 - 338. BibTeX |
| 49. | A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub: "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 327 - 330. BibTeX |
| 48. | M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation"; Talk: High Performance Computing Conference (HPC), Borovets, Bulgaria; 2019-09-02 - 2019-09-06; in "Procedings of the High Performance Computing Conference (HPC)", (2019), 45. BibTeX |
| 47. | L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching"; Talk: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 2019-07-21 - 2019-07-24; in "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), 109. BibTeX |
| 46. | L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "Three-Dimensional TCAD for Atomic Layer Processing"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 5. BibTeX |
| 45. | A. Hössinger, P. Manstetten, G. Diamantopoulos, M. Quell, J. Weinbub: "High Performance Computing Aspects in Semiconductor Process Simulation"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 3 - 4. BibTeX |
| 44. | P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub: "High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13. BibTeX |
| 43. | L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 109 - 110. BibTeX |
| 42. | G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub: "Recent Advances in High Performance Process TCAD"; Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 2019-02-25 - 2019-03-01; in "CSE19 Abstracts", (2019), 335. BibTeX |
| 41. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 336 - 339 doi:10.1109/SISPAD.2018.8551728. BibTeX |
| 40. | J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018), . BibTeX |
| 39. | V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide"; Talk: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 2018-06-20 - 2018-06-22; in "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), 42 - 44. BibTeX |
| 38. | G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub: "A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2018-06-03 - 2018-06-08; in "Proc. 6th European Seminar on Computing", (2018), 1 page(s) . BibTeX |
| 37. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017), . BibTeX |
| 36. | P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr: "Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 73 - 76 doi:10.23919/SISPAD.2017.8085267. BibTeX |
| 35. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 125 - 128 doi:10.23919/SISPAD.2017.8085280. BibTeX |
| 34. | G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr: "Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems"; Talk: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 2017-07-03 - 2017-07-06; in "Proceedings of the 2017 17th International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4, 1 - 8 doi:10.1109/ICCSA.2017.7999648. BibTeX |
| 33. | L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr: "Towards a Metric for an Automatic Hull Mesh Coarsening Strategy"; Talk: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 2017-06-01 - 2017-06-02; in "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2, 118 - 119. BibTeX |
| 32. | P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub: "Computational and Numerical Challenges in Semiconductor Process Simulation"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 46. BibTeX |
| 31. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 265 - 268 doi:10.1109/SISPAD.2016.7605198. BibTeX |
| 30. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 233 - 236 doi:10.1109/SISPAD.2016.7605190. BibTeX |
| 29. | J. Weinbub, A. Hössinger: "Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach"; Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 2016-04-03 - 2016-04-06; in "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1, 18:1 - 18:8 doi:10.22360/SpringSim.2016.HPC.052. BibTeX |
| 28. | P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 68 - 69. BibTeX |
| 27. | V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 128 - 129. BibTeX |
| 26. | R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr: "A Study of Boron Implantation into High Ge Content SiGe Alloys"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 25. | R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr: "Monte Carlo Simulation of Boron Implantation into (100) Germanium"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 381 - 384 doi:10.1109/SISPAD.2006.282914. BibTeX |
| 24. | V. Suvorov, A. Hössinger, Z. Djuric: "A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 3 - 4. BibTeX |
| 23. | R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 191 - 194 doi:10.1109/SISPAD.2005.201505. BibTeX |
| 22. | R. Wittmann, A. Hössinger, S. Selberherr: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 2004-10-03 - 2004-10-08; in "206th ECS Meeting", (2004), ISBN: 1-56677-420-9, 181 - 192. BibTeX |
| 21. | A. Hössinger, R. Minixhofer, S. Selberherr: "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 129 - 132 doi:10.1007/978-3-7091-0624-2_31. BibTeX |
| 20. | W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr: "Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 165 - 168 doi:10.1007/978-3-7091-0624-2_39. BibTeX |
| 19. | R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 169 - 172 doi:10.1007/978-3-7091-0624-2_40. BibTeX |
| 18. | W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric"; Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46. BibTeX |
| 17. | R. Wittmann, A. Hössinger, S. Selberherr: "Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 35 - 40. BibTeX |
| 16. | J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr: "Dreidimensionale Modellierung Elektronischer Bauteile"; Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382. BibTeX |
| 15. | W. Wessner, A. Hössinger, S. Selberherr: "Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"; Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 523 - 528. BibTeX |
| 14. | A. Hössinger, J. Cervenka, S. Selberherr: "A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 259 - 262 doi:10.1109/SISPAD.2003.1233686. BibTeX |
| 13. | W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr: "Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 109 - 112 doi:10.1109/SISPAD.2003.1233649. BibTeX |
| 12. | R. Wittmann, A. Hössinger, S. Selberherr: "Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 159 - 163. BibTeX |
| 11. | H. Ceric, A. Hössinger, T. Binder, S. Selberherr: "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145. BibTeX |
| 10. | C. Heitzinger, A. Hössinger, S. Selberherr: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 702 - 711. BibTeX |
| 9. | T. Binder, H. Ceric, A. Hössinger, S. Selberherr: "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 183 - 186 doi:10.1109/SISPAD.2002.1034547. BibTeX |
| 8. | J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr: "Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 408 - 411 doi:10.1007/978-3-7091-6244-6_94. BibTeX |
| 7. | A. Hössinger, T. Binder, W. Pyka, S. Selberherr: "Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 424 - 427 doi:10.1007/978-3-7091-6244-6_98. BibTeX |
| 6. | A. Hössinger, E. Langer: "Parallel Monte Carlo Simulation of Ion Implantation"; Talk: International Conference on Ion Implantation Technology, Cork; (invited) 2000-09-17 - 2000-09-22; in "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), 203 - 208. BibTeX |
| 5. | A. Hössinger, E. Langer, S. Selberherr: "Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator"; Talk: European Simulation Symposium (ESS), Erlangen; 1999-10-26 - 1999-10-28; in "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x, 649 - 651. BibTeX |
| 4. | A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 55 - 58 doi:10.1109/SISPAD.1999.799258. BibTeX |
| 3. | A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr: "Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 103 - 106 doi:10.1109/SISPAD.1999.799271. BibTeX |
| 2. | A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, S. Kusanagi: "Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions"; Talk: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 1999-05-05 - 1999-05-06; in "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", (1999), Vol.99-2, ISBN: 1-56677-224-9, 18 - 25. BibTeX |
| 1. | A. Hössinger, S. Selberherr: "Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 363 - 366. BibTeX |
| 1. | A. Hössinger: "Simulation of Ion Implantation for ULSI Technology"; Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 2000, oral examination: 2000-09-11. BibTeX |
| 1. | R. Heinzl: "A Three Dimensional Analytical Ion Implantation Tool Using the Wafer-State-Server"; Supervisor: E. Langer, A. Hössinger; Institut für Mikroelektronik, 2003, . BibTeX |
| 4. | A. Gehring, C. Heitzinger, A. Hössinger, E. Ungersböck, W. Wessner, S. Selberherr: "VISTA Status Report II"; (2003), 29 page(s) . BibTeX |
| 3. | T. Grasser, M. Gritsch, C. Heitzinger, A. Hössinger, S. Selberherr: "VISTA Status Report II"; (2001), 25 page(s) . BibTeX |
| 2. | T. Grasser, A. Hössinger, R. Kosik, R. Mlekus, W. Pyka, M. Stockinger, S. Selberherr: "VISTA Status Report II"; (1999), 58 page(s) . BibTeX |
| 1. | T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr: "VISTA Status Report II"; (1997), 36 page(s) . BibTeX |