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Publications Andreas Hössinger

84 records


Publications in Scientific Journals


21. G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
"A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing";
Advances in Computational Mathematics, 45, (2019), 2029 - 2045 doi:10.1007/s10444-019-09683-z. BibTeX

20. A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
"Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX

19. J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
"Surface Morphology of 4H-SiC After Thermal Oxidation";
Materials Science Forum, 963, (2019), 180 - 183 doi:10.4028/www.scientific.net/MSF.963.180. BibTeX

18. L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"Accelerating Flux Calculations Using Sparse Sampling";
Micromachines, 9, (invited) (2018), 1 - 17 doi:10.3390/mi9110550. BibTeX

17. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide";
IEEE Transactions on Electron Devices, 65, (2018), 674 - 679 doi:10.1109/TED.2017.2786086. BibTeX

16. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Materials Science Forum, 924, (2018), 192 - 195 doi:10.4028/www.scientific.net/MSF.924.192. BibTeX

15. V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX

14. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
Solid-State Electronics, 128, (invited) (2017), 141 - 147 doi:10.1016/j.sse.2016.10.029. BibTeX

13. P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr:
"Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces";
Procedia Computer Science, 108, (2017), 245 - 254 doi:10.1016/j.procs.2017.05.067. BibTeX

12. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation";
Journal of Physical Chemistry A, 121, (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983. BibTeX

11. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032. BibTeX

10. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688. BibTeX

9. J. Weinbub, A. Hössinger:
"Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method";
Procedia Computer Science, 80, (2016), 2271 - 2275 doi:10.1016/j.procs.2016.05.408. BibTeX

8. J. Weinbub, A. Hössinger:
"Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method";
Journal of Computational Electronics, 13, (2014), 877 - 884 doi:10.1007/s10825-014-0604-x. BibTeX

7. W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2129 - 2139 doi:10.1109/TCAD.2005.862750. BibTeX

6. C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation, 66, (2004), 219 - 230 doi:10.1016/j.matcom.2003.11.010. BibTeX

5. T. Binder, A. Hössinger, S. Selberherr:
"Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 1204 - 1214 doi:10.1109/TCAD.2003.816219. BibTeX

4. C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 879 - 883 doi:10.1109/TCAD.2003.814259. BibTeX

3. T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz:
"Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures ";
Concurrency and Computation: Practice and Experience, 13, (2001), 1 - 17. BibTeX

2. A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
IEICE Transactions on Electronics, E83-C, (2000), 1259 - 1266. BibTeX

1. A. Hössinger, E. Langer, S. Selberherr:
"Parallelization of a Monte Carlo Ion Implantation Simulator";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 560 - 567 doi:10.1109/43.845080. BibTeX


Contributions to Books


6. L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"Accelerating Flux Calculations Using Sparse Sampling";
in "Miniaturized Transistors", L. Filipovic, T. Grasser (ed); MDPI, (invited) 2019, ISBN: 978-3-03921-010-7, 176 - 192 doi:10.3390/books978-3-03921-011-4. BibTeX

5. P. Manstetten, L. Gnam, A. Hössinger, S. Selberherr, J. Weinbub:
"Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme";
in "Lecture Notes in Computer Science", ICCS 2018, Y. Shi, H. Fu, Y. Tian, V. Krzhizhanovskaya, M. Lees, J. Dongarra, P. Sloot (ed); Springer, 2018, ISBN: 978-3-319-93698-7, 694 - 707 doi:10.1007/978-3-319-93698-7_53. BibTeX

4. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 120 - 123 doi:10.1109/ULIS.2016.7440067. BibTeX

3. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 226 - 229 doi:10.1109/ULIS.2016.7440094. BibTeX

2. R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
"A Study of Boron Implantation into High Ge Content SiGe Alloys";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 667 - 676 doi:10.1149/1.2355862. BibTeX

1. R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
in "SiGe: Materials, Processing, and Devices", issued by The Electrochemical Society; ECS Transactions, 2004, ISBN: 1-56677-420-9, 181 - 192. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


51. M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"Parallelized Construction of Extension Velocities for the Level-Set Method";
Talk: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 2019-09-08 - 2019-09-11; in "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), 42. BibTeX

50. M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 335 - 338 doi:10.1109/SISPAD.2019.8870482. BibTeX

49. A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub:
"Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 327 - 330 doi:10.1109/SISPAD.2019.8870443. BibTeX

48. M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
"Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation";
Talk: High Performance Computing Conference (HPC), Borovets, Bulgaria; 2019-09-02 - 2019-09-06; in "Procedings of the High Performance Computing Conference (HPC)", (2019), 45. BibTeX

47. L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching";
Talk: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 2019-07-21 - 2019-07-24; in "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), 109. BibTeX

46. L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"Three-Dimensional TCAD for Atomic Layer Processing";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 5. BibTeX

45. A. Hössinger, P. Manstetten, G. Diamantopoulos, M. Quell, J. Weinbub:
"High Performance Computing Aspects in Semiconductor Process Simulation";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 3 - 4. BibTeX

44. P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub:
"High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13. BibTeX

43. L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description";
Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 109 - 110. BibTeX

42. G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub:
"Recent Advances in High Performance Process TCAD";
Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 2019-02-25 - 2019-03-01; in "CSE19 Abstracts", (2019), 335. BibTeX

41. A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
"Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 336 - 339 doi:10.1109/SISPAD.2018.8551728. BibTeX

40. J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
"Surface Morphology of 4H-SiC After Thermal Oxidation";
Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018), . BibTeX

39. V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
"Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide";
Talk: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 2018-06-20 - 2018-06-22; in "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), 42 - 44. BibTeX

38. G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
"A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2018-06-03 - 2018-06-08; in "Proc. 6th European Seminar on Computing", (2018), 1 page(s) . BibTeX

37. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017), . BibTeX

36. P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr:
"Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 73 - 76 doi:10.23919/SISPAD.2017.8085267. BibTeX

35. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 125 - 128 doi:10.23919/SISPAD.2017.8085280. BibTeX

34. G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr:
"Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems";
Talk: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 2017-07-03 - 2017-07-06; in "Proceedings of the 2017 17th International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4, 1 - 8 doi:10.1109/ICCSA.2017.7999648. BibTeX

33. L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr:
"Towards a Metric for an Automatic Hull Mesh Coarsening Strategy";
Talk: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 2017-06-01 - 2017-06-02; in "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2, 118 - 119. BibTeX

32. P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub:
"Computational and Numerical Challenges in Semiconductor Process Simulation";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 46. BibTeX

31. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 265 - 268 doi:10.1109/SISPAD.2016.7605198. BibTeX

30. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 233 - 236 doi:10.1109/SISPAD.2016.7605190. BibTeX

29. J. Weinbub, A. Hössinger:
"Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach";
Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 2016-04-03 - 2016-04-06; in "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1, 18:1 - 18:8 doi:10.22360/SpringSim.2016.HPC.052. BibTeX

28. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 68 - 69. BibTeX

27. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 128 - 129. BibTeX

26. R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
"A Study of Boron Implantation into High Ge Content SiGe Alloys";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX

25. R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr:
"Monte Carlo Simulation of Boron Implantation into (100) Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 381 - 384 doi:10.1109/SISPAD.2006.282914. BibTeX

24. V. Suvorov, A. Hössinger, Z. Djuric:
"A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 3 - 4. BibTeX

23. R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 191 - 194 doi:10.1109/SISPAD.2005.201505. BibTeX

22. R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 2004-10-03 - 2004-10-08; in "206th ECS Meeting", (2004), ISBN: 1-56677-420-9, 181 - 192. BibTeX

21. A. Hössinger, R. Minixhofer, S. Selberherr:
"Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 129 - 132 doi:10.1007/978-3-7091-0624-2_31. BibTeX

20. W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr:
"Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 165 - 168 doi:10.1007/978-3-7091-0624-2_39. BibTeX

19. R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 169 - 172 doi:10.1007/978-3-7091-0624-2_40. BibTeX

18. W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46. BibTeX

17. R. Wittmann, A. Hössinger, S. Selberherr:
"Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 35 - 40. BibTeX

16. J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382. BibTeX

15. W. Wessner, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 523 - 528. BibTeX

14. A. Hössinger, J. Cervenka, S. Selberherr:
"A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 259 - 262 doi:10.1109/SISPAD.2003.1233686. BibTeX

13. W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 109 - 112 doi:10.1109/SISPAD.2003.1233649. BibTeX

12. R. Wittmann, A. Hössinger, S. Selberherr:
"Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 159 - 163. BibTeX

11. H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
"Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145. BibTeX

10. C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 702 - 711. BibTeX

9. T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
"A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 183 - 186 doi:10.1109/SISPAD.2002.1034547. BibTeX

8. J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr:
"Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 408 - 411 doi:10.1007/978-3-7091-6244-6_94. BibTeX

7. A. Hössinger, T. Binder, W. Pyka, S. Selberherr:
"Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 424 - 427 doi:10.1007/978-3-7091-6244-6_98. BibTeX

6. A. Hössinger, E. Langer:
"Parallel Monte Carlo Simulation of Ion Implantation";
Talk: International Conference on Ion Implantation Technology, Cork; (invited) 2000-09-17 - 2000-09-22; in "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), 203 - 208. BibTeX

5. A. Hössinger, E. Langer, S. Selberherr:
"Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator";
Talk: European Simulation Symposium (ESS), Erlangen; 1999-10-26 - 1999-10-28; in "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x, 649 - 651. BibTeX

4. A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 55 - 58 doi:10.1109/SISPAD.1999.799258. BibTeX

3. A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr:
"Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 103 - 106 doi:10.1109/SISPAD.1999.799271. BibTeX

2. A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, S. Kusanagi:
"Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions";
Talk: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 1999-05-05 - 1999-05-06; in "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", (1999), 99-2, ISBN: 1-56677-224-9, 18 - 25. BibTeX

1. A. Hössinger, S. Selberherr:
"Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 363 - 366. BibTeX


Doctor's Theses (authored and supervised)


1. A. Hössinger:
"Simulation of Ion Implantation for ULSI Technology";
Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 2000, oral examination: 2000-09-11. BibTeX


Diploma and Master Theses (authored and supervised)


1. R. Heinzl:
"A Three Dimensional Analytical Ion Implantation Tool Using the Wafer-State-Server";
Supervisor: E. Langer, A. Hössinger; Institut für Mikroelektronik, 2003, . BibTeX


Scientific Reports


4. A. Gehring, C. Heitzinger, A. Hössinger, E. Ungersböck, W. Wessner, S. Selberherr:
"VISTA Status Report II";
(2003), 29 page(s) . BibTeX

3. T. Grasser, M. Gritsch, C. Heitzinger, A. Hössinger, S. Selberherr:
"VISTA Status Report II";
(2001), 25 page(s) . BibTeX

2. T. Grasser, A. Hössinger, R. Kosik, R. Mlekus, W. Pyka, M. Stockinger, S. Selberherr:
"VISTA Status Report II";
(1999), 58 page(s) . BibTeX

1. T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr:
"VISTA Status Report II";
(1997), 36 page(s) . BibTeX

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Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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