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Publications Markus Jech

51 records

Publications in Scientific Journals

18.   Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab Initio Investigations in Amorphous Silicon Dioxide: Proposing a Multi-State Defect Model for Electron and Hole Capture.
Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm)

17.   Ruch, B., Jech, M., Pobegen, G., Grasser, T. (2021).
Applicability of Shockley-Read-Hall Theory for Interface States.
IEEE Transactions on Electron Devices, 68(4), 2092–2097. https://doi.org/10.1109/ted.2021.3049760 (reposiTUm)

16.   Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2021).
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices.
Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 (reposiTUm)

15.   Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., Grasser, T. (2020).
Insulators for 2D Nanoelectronics: The Gap to Bridge.
Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 (reposiTUm)

14.   Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020).
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities.
IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm)

13.   Jech, M., El-Sayed, A.-M. B., Tyaginov, S., Shluger, A. L., Grasser, T. (2019).
Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces.
Physical Review B, 100(19), Article 195302. https://doi.org/10.1103/physrevb.100.195302 (reposiTUm)

12.   Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach.
IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 (reposiTUm)

11.   Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental.
IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm)

10.   Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory.
IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

9.   Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Analysis of the Features of Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 (reposiTUm)

8.   Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018).
Comphy -- A Compact-Physics Framework for Unified Modeling of BTI.
Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm)

7.   Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., Grasser, T. (2018).
Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence.
Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 (reposiTUm)

6.   Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 (reposiTUm)

5.   Tyaginov, S. E., Makarov, A. A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., Grasser, T. (2018).
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures.
Semiconductors, 52(2), 242–247. https://doi.org/10.1134/s1063782618020203 (reposiTUm)

4.   Kaczer, B., Franco, J., Tyaginov, S., Jech, M., Rzepa, G., Grasser, T., O’Sullivan, B. J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., Horiguchi, N. (2017).
Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices.
Journal of Vacuum Science, Technology B, 35(1), 01A109. https://doi.org/10.1116/1.4972872 (reposiTUm)

3.   Jech, M., Sharma, P., Tyaginov, S., Rudolf, F., Grasser, T. (2016).
On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling.
Japanese Journal of Applied Physics, 55(4S), 04ED14. https://doi.org/10.7567/jjap.55.04ed14 (reposiTUm)

2.   Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2016).
The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in N- And P-Channel LDMOS Devices.
Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 (reposiTUm)

1.   Tyaginov, S., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016).
Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON N-MOSFETs.
IEEE Electron Device Letters, 37(1), 84–87. https://doi.org/10.1109/led.2015.2503920 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

28.   Cvitkovich, L., Waldhör, D., El-Sayed, A., Jech, M., Wilhelmer, C., Grasser, T. (2022).
Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation.
In PSI-K 2022: abstracts book (p. 209), Lausanne, Schwitzerland. (reposiTUm)

27.   Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab-Initio Study of Multi-State Defects in Amorphous SiO2.
In PSI-K 2022: abstracts book (p. 264), Lausanne, Schwitzerland. (reposiTUm)

26.   Milardovich, D., Waldhoer, D., Jech, M., El-Sayed, A., Grasser, T. (2022).
Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 61–62), Granada, Spain. (reposiTUm)

25.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2022).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In PSI-K 2022 Abstracts Book, Lausanne, Schwitzerland. (reposiTUm)

24.   Jech, M., Grasser, T., Waltl, M. (2022).
The Importance of Secondary Generated Carriers in Modeling of Full Bias Space.
In 2022 6th IEEE Electron Devices Technology, Manufacturing Conference (EDTM), Japan. https://doi.org/10.1109/edtm53872.2022.9798262 (reposiTUm)

23.   Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B. (2021).
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 With Excellent pMOS NBTI Reliability Compatible With 3D Sequential Tier Stacking.
In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm13553.2020.9372054 (reposiTUm)

22.   El-Sayed, A., Seiler, H., Kosina, H., Jech, M., Waldhör, D., Sverdlov, V. (2021).
First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons With Realistic Terminations.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560183 (reposiTUm)

21.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2021).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631837 (reposiTUm)

20.   Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A., Wilhelmer, C., Grasser, T. (2021).
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631790 (reposiTUm)

19.   Wilhelmer, C., Jech, M., Waldhoer, D., El-Sayed, A., Cvitkovich, L., Grasser, T. (2021).
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631833 (reposiTUm)

18.   Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B. (2020).
A Compact Physics Analytical Model for Hot-Carrier Degradation.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128327 (reposiTUm)

17.   Ruch, B., Jech, M., Pobegen, G., Grasser, T. (2020).
Applicability of Shockley-Read-Hall Theory for Interface States.
In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm13553.2020.9372032 (reposiTUm)

16.   Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., Grasser, T. (2020).
Machine Learning Prediction of Defect Formation Energies in A-SiO₂.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241609 (reposiTUm)

15.   Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020).
Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm)

14.   Jech, M., Tyaginov, S., Kaczer, B., Franco, J., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2019).
First–Principles Parameter–Free Modeling of N– And P–FET Hot–Carrier Degradation.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993630 (reposiTUm)

13.   Tyaginov, S., Chasin, A., Makarov, A., El-Sayed, A., Jech, M., De Keersgieter, A., Eneman, G., Vandemaele, M., Franco, J., Linten, D., Kaczer, B. (2019).
Physics-Based Modeling of Hot-Carrier Degradation in Ge NWFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 565–566), Fukuoka, Japan. (reposiTUm)

12.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Simulation Study: The Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 609–610), Fukuoka, Japan. (reposiTUm)

11.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2019.8901721 (reposiTUm)

10.   Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B. (2019).
Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993644 (reposiTUm)

9.   Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018).
Border Trap Based Modeling of SiC Transistor Transfer Characteristics.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm)

8.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

7.   Makarov, A., Tyaginov, S., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T. (2017).
Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology.
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268381 (reposiTUm)

6.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

5.   Illarionov, Y., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T. (2017).
Reliability of Black Phosphorus Field-Effect Transistors With Respect to Bias-Temperature and Hot-Carrier Stress.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936338 (reposiTUm)

4.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

3.   Tyaginov, S., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016).
On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation.
In 2016 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2016.7904911 (reposiTUm)

2.   Sharma, P., Jech, M., Tyaginov, S., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Grasser, T. (2015).
Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292258 (reposiTUm)

1.   Tyaginov, S., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T. (2015).
On the Temperature Behavior of Hot-Carrier Degradation.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2015.7437088 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

1.   Ullmann, B., Grill, A., Manstetten, P., Jech, M., Kampl, M., Zisser, W., Filipovic, L., Thesberg, M., Rudolf, F., Windbacher, T., Cervenka, J., Katterbauer, M., Weinbub, J. (2016).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik.
Lange Nacht der Forschung 2016, Wien, Austria. (reposiTUm)

Doctor's Theses (authored and supervised)

1.   Jech, M. (2020).
The Physics of Non-Equilibrium Reliability Phenomena
 Technische Universität Wien. https://doi.org/10.34726/hss.2020.85163 (reposiTUm)

Diploma and Master Theses (authored and supervised)

3.   Fleischanderl, P. (2018).
Charakterisierung Von Hot Carrier Degradation in Siliziumtransistoren
 Technische Universität Wien. (reposiTUm)

2.  M. Bellini:
"Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide";
Supervisor: T. Grasser, M. Jech, Y. Wimmer; Institut für Mikroelektronik, 2017; final examination: 2017-03-09.

1.   Jech, M. (2014).
Die Hopfzahl in Einer SU(2)-Feldtheorie
 Technische Universität Wien. https://doi.org/10.34726/hss.2014.23616 (reposiTUm)