Skip to main navigation Skip to main content

Publications Gerhard Karlowatz

20 records

Publications in Scientific Journals

6.   Floss, S., Kaltenbacher, M., Karlowatz, G. (2018).
Application and Simulation of Micro-Perforated Panels in HVAC Systems.
SAE Technical Papers, 2018-01–1514. https://doi.org/10.4271/2018-01-1514 (reposiTUm)

5.   Karlowatz, G., Wessner, W., Kosina, H. (2008).
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
Mathematics and Computers in Simulation, 79(4), 972–979. https://doi.org/10.1016/j.matcom.2008.02.021 (reposiTUm)

4.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2008).
Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 (reposiTUm)

3.   Ungersboeck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
Journal of Computational Electronics, 6(1–3), 55–58. https://doi.org/10.1007/s10825-006-0047-0 (reposiTUm)

2.   Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon.
IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 (reposiTUm)

1.   Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., Selberherr, S. (2006).
High-Field Electron Mobility Model for Strained-Silicon Devices.
IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 (reposiTUm)

Contributions to Books

1.   Karlowatz, G., Ungersböck, S. E., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 443–450). ECS Transactions. https://doi.org/10.1149/1.2355842 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

10.   Sverdlov, V., Karlowatz, G., Ungersboeck, E., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_79 (reposiTUm)

9.   Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Two-Band k.p Model for the Conduction Band in Silicon.
In Proceedings European Simulation and Modeling Conference (pp. 220–224), Malta. (reposiTUm)

8.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2007).
Two-Band K·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

7.   Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S., Grasser, T., Selberherr, S. (2006).
A Tensorial High-Field Electron Mobility Model for Strained Silicon.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73), Princeton. (reposiTUm)

6.   Karlowatz, G., Ungersböck, S., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

5.   Karlowatz, G., Wessner, W., Kosina, H. (2006).
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
In 5th Mathmod Vienna Proceedings (pp. 4-1–4-6), Wien, Austria. (reposiTUm)

4.   Karlowatz, G., Ungersboeck, E., Wessner, W., Kosina, H. (2006).
Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282839 (reposiTUm)

3.   Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2006).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 141–142), Urbana-Champaign, IL, USA. (reposiTUm)

2.   Dhar, S., Karlowatz, G., Ungersböck, S., Kosina, H., Selberherr, S. (2005).
Modeling of Velocity-Field Characteristics in Strained Silicon.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 1060–1063), New Dehli. (reposiTUm)

1.   Dhar, S., Karlowatz, G., Ungersboeck, E., Kosina, H. (2005).
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201513 (reposiTUm)

Doctor's Theses (authored and supervised)

Diploma and Master Theses (authored and supervised)

1.   Karlowatz, G. (2000).
Messung Akustischer Vierpolparameter Von Materialien in Einer Schallröhre
 Technische Universität Wien. (reposiTUm)

Scientific Reports

1.   Ceric, H., Dhar, S., Karlowatz, G., Li, L., Pourfath, M., Selberherr, S. (2007).
VISTA Status Report June 2007.
(reposiTUm)