Publications Theresia Knobloch
54 recordsPublications in Scientific Journals
25. | Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., Luisier, M. (2022). An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride. Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 (reposiTUm) | |
24. | Knobloch, T., Selberherr, S., Grasser, T. (2022). Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials. Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 (reposiTUm) | |
23. | Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022). Improving Stability in Two-Dimensional Transistors With Amorphous Gate Oxides by Fermi-Level Tuning. Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm) | |
22. | Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2022). Inorganic Molecular Crystals for 2D Electronics. Nature Electronics, 4(12), 870–871. https://doi.org/10.1038/s41928-021-00691-w (reposiTUm) | |
21. | Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022). Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm) | |
20. | Illarionov, Y. Y., Knobloch, T., Grasser, T. (2021). Crystalline Insulators for Scalable 2D Nanoelectronics. Solid-State Electronics, 185(108043), 108043. https://doi.org/10.1016/j.sse.2021.108043 (reposiTUm) | |
19. | Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021). The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials. Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm) | |
18. | Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselbberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., Singh, R. (2021). Transistors Based on Two-Dimensional Materials for Future Integrated Circuits. Nature Electronics, 4(11), 786–799. https://doi.org/10.1038/s41928-021-00670-1 (reposiTUm) | |
17. | Wen, C., Banshchikov, A. G., Illarionov, Y., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., Lanza, M. (2020). Dielectric Properties of Ultrathin CaF₂ Ionic Crystals. Advanced Materials, 32(34), 2002525-1-2002525–2002526. (reposiTUm) | |
16. | Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., Grasser, T. (2020). Insulators for 2D Nanoelectronics: The Gap to Bridge. Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 (reposiTUm) | |
15. | Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2020). Native High-K Oxides for 2D Transistors. Nature Electronics, 3(8), 442–443. https://doi.org/10.1038/s41928-020-0464-2 (reposiTUm) | |
14. | Oliva, N., Illarionov, Y. Y., Casu, E. A., Cavalieri, M., Knobloch, T., Grasser, T., Ionescu, A. M. (2019). Hysteresis Dynamics in Double-Gated N-Type WSe₂ FETs With High-K Top Gate Dielectric. IEEE Journal of the Electron Devices Society, 7, 1163–1169. https://doi.org/10.1109/jeds.2019.2933745 (reposiTUm) | |
13. | Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019). Reliability of Scalable MoS2 FETs With 2 Nm Crystalline CaF2 Insulators. 2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 (reposiTUm) | |
12. | Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019). Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors. Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 (reposiTUm) | |
11. | Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018). A Physical Model for the Hysteresis in MoS2 Transistors. IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm) | |
10. | Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018). Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm) | |
9. | Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018). Comphy -- A Compact-Physics Framework for Unified Modeling of BTI. Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm) | |
8. | Gillinger, M., Shaposhnikov, K., Knobloch, T., Stöger-Pollach, M., Artner, W., Hradil, K., Schneider, M., Kaltenbacher, M., Schmid, U. (2018). Enhanced C-Axis Orientation of Aluminum Nitride Thin Films by Plasma-Based Pre-Conditioning of Sapphire Substrates for SAW Applications. Applied Surface Science, 435, 432–437. https://doi.org/10.1016/j.apsusc.2017.11.113 (reposiTUm) | |
7. | Gillinger, M., Knobloch, T., Markovic, A., Pfusterschmied, G., Schneider, M., Schmid, U. (2018). Performance of Thin AlxOy, SixNy and AlN Passivation Layers for High Temperature SAW Device Applications. Materials Science in Semiconductor Processing, 81, 1–6. https://doi.org/10.1016/j.mssp.2018.02.028 (reposiTUm) | |
6. | Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017). Energetic Mapping of Oxide Traps in MoS₂ Field-Effect Transistors. 2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm) | |
5. | Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017). Highly-Stable Black Phosphorus Field-Effect Transistors With Low Density of Oxide Traps. Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm) | |
4. | Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., Grasser, T. (2017). Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation. IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 (reposiTUm) | |
3. | Song, X., Hui, F., Knobloch, T., Wang, B., Fan, Z., Grasser, T., Jing, X., Shi, Y., Lanza, M. (2017). Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide. Applied Physics Letters, 111(8), 083107. https://doi.org/10.1063/1.5000496 (reposiTUm) | |
2. | M. Gillinger, K. Shaposhnikov, T. Knobloch, M. Schneider, M. Kaltenbacher, U. Schmid: "Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire"; Applied Physics Letters, 108 (2016), 231601-1 - 231601-4. https://doi.org/10.1063/1.4953259 | |
1. | Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016). The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors. 2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm) | |
Contributions to Books
1. | Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., Grasser, T. (2017). (Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors. In D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
17. | Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022). CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators. In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, USA. (reposiTUm) | |
16. | Knobloch, T., Illarionov, Y., Grasser, T. (2022). Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning. In Abstracts of Graphene Week 2022, Munich, Germany. (reposiTUm) | |
15. | Knobloch, T., Illarionov, Y., Grasser, T. (2022). Finding Suitable Gate Insulators for Reliable 2D FETs. In 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, United States. https://doi.org/10.1109/irps48227.2022.9764499 (reposiTUm) | |
14. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
13. | Wen, C., Illarionov, Y., Frammelsberger, W., Knobloch, T., Grasser, T., Lanza, M. (2021). Outstanding Dielectric Properties of Ultra-Thin CaF2 Dielectric Films. In Bulletin of the American Physical Society, Los Angeles/USA, Austria. (reposiTUm) | |
12. | Illarionov, Y., Knobloch, T., Grasser, T. (2020). (Invited) Where Are the Best Insulators for 2D Field-Effect Transistors?. In ECS Meeting Abstracts (p. 844), Honolulu, Austria. https://doi.org/10.1149/ma2020-0110844mtgabs (reposiTUm) | |
11. | Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020). Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures. In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm) | |
10. | Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020). Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation. In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm) | |
9. | Illarionov, Y., Banshchikov, A., Knobloch, T., Polyushkin, D., Wachter, S., Fedorov, V., Suturin, S., Stöger-Pollach, M., Vexler, M., Sokolov, N., Grasser, T. (2020). Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. In 2020 Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc50226.2020.9135160 (reposiTUm) | |
8. | Illarionov, Y., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T. (2020). Low Variability and 1010 on/Off Current Ratio in Flexible MoS2 FETs With Al2O3 Encapsulation Improved by Parylene N. In Proceedings of the Electronic Materials Conference (EMC) (p. 25), Columbus, OH, USA - virtual. (reposiTUm) | |
7. | Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T. (2020). The Impact of the Graphene Work Function on the Stability of Flexible GFETs. In Proceedings of the Electronic Materials Conference (EMC), Columbus, OH, USA - virtual. (reposiTUm) | |
6. | Illarionov, Y., Molina- Mendoza, A., Waltl, M., Knobloch, T., Furchi, M., Mueller, T., Grasser, T. (2018). Reliability of Next-Generation Field-Effect Transistors With Transition Metal Dichalcogenides. In 2018 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2018.8353605 (reposiTUm) | |
5. | Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017). Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs. In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm) | |
4. | Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017). Efficient Physical Defect Model Applied to PBTI in High-κ Stacks. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm) | |
3. | Gillinger, M., Knobloch, T., Schneider, M., Schmid, U. (2017). Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium Doped Aluminum Nitride on Sapphire. In Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017, Paris, Frankreich. https://doi.org/10.3390/proceedings1040341 (reposiTUm) | |
2. | Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017). Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors. In Meeting Abstracts (p. 2), Honolulu, Austria. (reposiTUm) | |
1. | Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017). Physical Modeling of the Hysteresis in M0S2 Transistors. In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
9. | Knobloch, T. (2022). Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling. Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm) | |
8. | Illarionov, Y., Knobloch, T., Uzlu, B., Sokolov, N. S., Lemme, M. C., Grasser, T. (2022). Highly Stable GFETs With 2nm Crystalline CaF2 Insulators. 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia, Non-EU. (reposiTUm) | |
7. | Knobloch, T., Grasser, T. (2022). Scalable and Reliable Gate Insulators for 2D Material-Based FETs. IEEE Latin America Electron Devices Conference (LAEDC 2022), Puebla, Mexico. (reposiTUm) | |
6. | Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2022). Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs. Graphne 2022, Aachen, Germany, EU. (reposiTUm) | |
5. | Illarionov, Y., Knobloch, T., Grasser, T. (2021). Crystalline Insulators for Scalable 2D Nanoelectronics. International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland, EU. (reposiTUm) | |
4. | Illarionov, Y., Banshchikov, A. G., Sokolov, N. S., Fedorov, V. V., Suturin, S. M., Vexler, M. I., Knobloch, T., Polyushkin, D. K., Mueller, T., Grasser, T. (2021). Epitaxial Fluorides as a Universal Platform for More Moore and More Than Moore Electronics Based on 2D Materials. Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia, Non-EU. (reposiTUm) | |
3. | Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018). Characterization of Single Defects: From Si to MoS2 FETs. International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm) | |
2. | Filipovic, L., Kampl, M., Knobloch, T., Rzepa, G., Weinbub, J. (2018). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik (Mit Virtual Reality). Lange Nacht der Forschung 2018, Wien, Austria. (reposiTUm) | |
1. | Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017). Reliability Perspective of 2D Electronics. International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm) | |
Doctor's Theses (authored and supervised)
1. | Knobloch, T. (2022). On the Electrical Stability of 2D Material-Based Field-Effect Transistors Technische Universität Wien. https://doi.org/10.34726/hss.2022.98523 (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
1. | Knobloch, T. (2016). Characterization and Physical Modeling of Degradation in MoS2 Transistors Technische Universität Wien. https://doi.org/10.34726/hss.2016.39485 (reposiTUm) | |