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Publications Theresia Knobloch

54 records

Publications in Scientific Journals

25.   Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., Luisier, M. (2022).
An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride.
Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 (reposiTUm)

24.   Knobloch, T., Selberherr, S., Grasser, T. (2022).
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.
Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 (reposiTUm)

23.   Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022).
Improving Stability in Two-Dimensional Transistors With Amorphous Gate Oxides by Fermi-Level Tuning.
Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm)

22.   Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2022).
Inorganic Molecular Crystals for 2D Electronics.
Nature Electronics, 4(12), 870–871. https://doi.org/10.1038/s41928-021-00691-w (reposiTUm)

21.   Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022).
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

20.   Illarionov, Y. Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
Solid-State Electronics, 185(108043), 108043. https://doi.org/10.1016/j.sse.2021.108043 (reposiTUm)

19.   Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021).
The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials.
Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm)

18.   Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselbberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., Singh, R. (2021).
Transistors Based on Two-Dimensional Materials for Future Integrated Circuits.
Nature Electronics, 4(11), 786–799. https://doi.org/10.1038/s41928-021-00670-1 (reposiTUm)

17.   Wen, C., Banshchikov, A. G., Illarionov, Y., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., Lanza, M. (2020).
Dielectric Properties of Ultrathin CaF₂ Ionic Crystals.
Advanced Materials, 32(34), 2002525-1-2002525–2002526. (reposiTUm)

16.   Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., Grasser, T. (2020).
Insulators for 2D Nanoelectronics: The Gap to Bridge.
Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 (reposiTUm)

15.   Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2020).
Native High-K Oxides for 2D Transistors.
Nature Electronics, 3(8), 442–443. https://doi.org/10.1038/s41928-020-0464-2 (reposiTUm)

14.   Oliva, N., Illarionov, Y. Y., Casu, E. A., Cavalieri, M., Knobloch, T., Grasser, T., Ionescu, A. M. (2019).
Hysteresis Dynamics in Double-Gated N-Type WSe₂ FETs With High-K Top Gate Dielectric.
IEEE Journal of the Electron Devices Society, 7, 1163–1169. https://doi.org/10.1109/jeds.2019.2933745 (reposiTUm)

13.   Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Reliability of Scalable MoS2 FETs With 2 Nm Crystalline CaF2 Insulators.
2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 (reposiTUm)

12.   Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors.
Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 (reposiTUm)

11.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018).
A Physical Model for the Hysteresis in MoS2 Transistors.
IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

10.   Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

9.   Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018).
Comphy -- A Compact-Physics Framework for Unified Modeling of BTI.
Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm)

8.   Gillinger, M., Shaposhnikov, K., Knobloch, T., Stöger-Pollach, M., Artner, W., Hradil, K., Schneider, M., Kaltenbacher, M., Schmid, U. (2018).
Enhanced C-Axis Orientation of Aluminum Nitride Thin Films by Plasma-Based Pre-Conditioning of Sapphire Substrates for SAW Applications.
Applied Surface Science, 435, 432–437. https://doi.org/10.1016/j.apsusc.2017.11.113 (reposiTUm)

7.   Gillinger, M., Knobloch, T., Markovic, A., Pfusterschmied, G., Schneider, M., Schmid, U. (2018).
Performance of Thin AlxOy, SixNy and AlN Passivation Layers for High Temperature SAW Device Applications.
Materials Science in Semiconductor Processing, 81, 1–6. https://doi.org/10.1016/j.mssp.2018.02.028 (reposiTUm)

6.   Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017).
Energetic Mapping of Oxide Traps in MoS₂ Field-Effect Transistors.
2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm)

5.   Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017).
Highly-Stable Black Phosphorus Field-Effect Transistors With Low Density of Oxide Traps.
Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm)

4.   Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., Grasser, T. (2017).
Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation.
IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 (reposiTUm)

3.   Song, X., Hui, F., Knobloch, T., Wang, B., Fan, Z., Grasser, T., Jing, X., Shi, Y., Lanza, M. (2017).
Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide.
Applied Physics Letters, 111(8), 083107. https://doi.org/10.1063/1.5000496 (reposiTUm)

2.  M. Gillinger, K. Shaposhnikov, T. Knobloch, M. Schneider, M. Kaltenbacher, U. Schmid:
"Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire";
Applied Physics Letters, 108 (2016), 231601-1 - 231601-4. https://doi.org/10.1063/1.4953259

1.   Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016).
The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors.
2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

Contributions to Books

1.   Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., Grasser, T. (2017).
(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors.
In D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

17.   Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022).
CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators.
In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, USA. (reposiTUm)

16.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning.
In Abstracts of Graphene Week 2022, Munich, Germany. (reposiTUm)

15.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Finding Suitable Gate Insulators for Reliable 2D FETs.
In 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, United States. https://doi.org/10.1109/irps48227.2022.9764499 (reposiTUm)

14.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

13.   Wen, C., Illarionov, Y., Frammelsberger, W., Knobloch, T., Grasser, T., Lanza, M. (2021).
Outstanding Dielectric Properties of Ultra-Thin CaF2 Dielectric Films.
In Bulletin of the American Physical Society, Los Angeles/USA, Austria. (reposiTUm)

12.   Illarionov, Y., Knobloch, T., Grasser, T. (2020).
(Invited) Where Are the Best Insulators for 2D Field-Effect Transistors?.
In ECS Meeting Abstracts (p. 844), Honolulu, Austria. https://doi.org/10.1149/ma2020-0110844mtgabs (reposiTUm)

11.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

10.   Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020).
Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation.
In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm)

9.   Illarionov, Y., Banshchikov, A., Knobloch, T., Polyushkin, D., Wachter, S., Fedorov, V., Suturin, S., Stöger-Pollach, M., Vexler, M., Sokolov, N., Grasser, T. (2020).
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.
In 2020 Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc50226.2020.9135160 (reposiTUm)

8.   Illarionov, Y., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T. (2020).
Low Variability and 1010 on/Off Current Ratio in Flexible MoS2 FETs With Al2O3 Encapsulation Improved by Parylene N.
In Proceedings of the Electronic Materials Conference (EMC) (p. 25), Columbus, OH, USA - virtual. (reposiTUm)

7.   Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T. (2020).
The Impact of the Graphene Work Function on the Stability of Flexible GFETs.
In Proceedings of the Electronic Materials Conference (EMC), Columbus, OH, USA - virtual. (reposiTUm)

6.   Illarionov, Y., Molina- Mendoza, A., Waltl, M., Knobloch, T., Furchi, M., Mueller, T., Grasser, T. (2018).
Reliability of Next-Generation Field-Effect Transistors With Transition Metal Dichalcogenides.
In 2018 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2018.8353605 (reposiTUm)

5.   Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017).
Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs.
In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm)

4.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

3.   Gillinger, M., Knobloch, T., Schneider, M., Schmid, U. (2017).
Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium Doped Aluminum Nitride on Sapphire.
In Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017, Paris, Frankreich. https://doi.org/10.3390/proceedings1040341 (reposiTUm)

2.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017).
Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors.
In Meeting Abstracts (p. 2), Honolulu, Austria. (reposiTUm)

1.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

9.   Knobloch, T. (2022).
Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling.
Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm)

8.   Illarionov, Y., Knobloch, T., Uzlu, B., Sokolov, N. S., Lemme, M. C., Grasser, T. (2022).
Highly Stable GFETs With 2nm Crystalline CaF2 Insulators.
6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia, Non-EU. (reposiTUm)

7.   Knobloch, T., Grasser, T. (2022).
Scalable and Reliable Gate Insulators for 2D Material-Based FETs.
IEEE Latin America Electron Devices Conference (LAEDC 2022), Puebla, Mexico. (reposiTUm)

6.   Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2022).
Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs.
Graphne 2022, Aachen, Germany, EU. (reposiTUm)

5.   Illarionov, Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland, EU. (reposiTUm)

4.   Illarionov, Y., Banshchikov, A. G., Sokolov, N. S., Fedorov, V. V., Suturin, S. M., Vexler, M. I., Knobloch, T., Polyushkin, D. K., Mueller, T., Grasser, T. (2021).
Epitaxial Fluorides as a Universal Platform for More Moore and More Than Moore Electronics Based on 2D Materials.
Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia, Non-EU. (reposiTUm)

3.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

2.   Filipovic, L., Kampl, M., Knobloch, T., Rzepa, G., Weinbub, J. (2018).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik (Mit Virtual Reality).
Lange Nacht der Forschung 2018, Wien, Austria. (reposiTUm)

1.   Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017).
Reliability Perspective of 2D Electronics.
International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm)

Doctor's Theses (authored and supervised)

1.   Knobloch, T. (2022).
On the Electrical Stability of 2D Material-Based Field-Effect Transistors
 Technische Universität Wien. https://doi.org/10.34726/hss.2022.98523 (reposiTUm)

Diploma and Master Theses (authored and supervised)

1.   Knobloch, T. (2016).
Characterization and Physical Modeling of Degradation in MoS2 Transistors
 Technische Universität Wien. https://doi.org/10.34726/hss.2016.39485 (reposiTUm)