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Publications Hans Kosina

667 records

Books and Editorships

3.   Kosina, H., Selberherr, S. (2009).
Guest Editorial.
Journal of Computational Electronics, Vol.8, SPRINGER (p. 173). https://doi.org/10.1007/s10825-009-0302-2 (reposiTUm)

2.   Kosina, H., Selberherr, S. (2007).
Editorial.
Journal of Computational Electronics, Vol.5, SPRINGER (p. 283). https://doi.org/10.1007/s10825-006-0001-1 (reposiTUm)

1.   Kosina, H., Selberherr, S. (Eds.). (2006).
11th International Workshop on Computational Electronics Book of Abstracts.
Technische Universität Wien, Institut für Mikroelektronik. (reposiTUm)

Publications in Scientific Journals

185.   Gull, J., Kosina, H. (2023).
Monte Carlo Study of Electron–electron Scattering Effects in FET Channels.
Solid-State Electronics, 208, Article 108730. https://doi.org/10.1016/j.sse.2023.108730 (reposiTUm)

184.   Sverdlov, V., Seiler, H., El-Sayed, A.-M. B., Illarionov, Y., Kosina, H. (2022).
Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase.
Solid-State Electronics, 193(108266), 108266. https://doi.org/10.1016/j.sse.2022.108266 (reposiTUm)

183.   Kosik, R., Cervenka, J., Kosina, H. (2021).
Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation.
Journal of Computational Electronics, 20(6), 2052–2061. https://doi.org/10.1007/s10825-021-01800-w (reposiTUm)

182.   Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., Kosina, H., Selberherr, S. (2021).
Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase.
Solid-State Electronics, 184(108081), 108081. https://doi.org/10.1016/j.sse.2021.108081 (reposiTUm)

181.   Sverdlov, V., El-Sayed, E. A.-M., Kosina, H., Selberherr, S. (2020).
Ballistic Conductance in a Topological 1T ’-MoS₂ Nanoribbon.
Semiconductors, 54(12), 1713–1715. https://doi.org/10.1134/s1063782620120386 (reposiTUm)

180.   Sverdlov, V., El-Sayed, A.-M. B., Kosina, H., Selberherr, S. (2020).
Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T’ Phase.
IEEE Transactions on Electron Devices, 67(11), 4687–4690. https://doi.org/10.1109/ted.2020.3023921 (reposiTUm)

179.   Safari, F., Moradinasab, M., Fathipour, M., Kosina, H. (2019).
Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study.
Applied Surface Science, 464, 153–161. https://doi.org/10.1016/j.apsusc.2018.09.048 (reposiTUm)

178.   Kittler, M., Reiche, M., Schwartz, B., Uebensee, H., Kosina, H., Stanojevic, Z., Baumgartner, O., Ortlepp, T. (2019).
Transport of Charge Carriers Along Dislocations in Si and Ge.
Physica Status Solidi (a) – Applications and Materials Science, 216(17), 1900287. https://doi.org/10.1002/pssa.201900287 (reposiTUm)

177.   Kampl, M., Kosina, H. (2018).
The Backward Monte Carlo Method for Semiconductor Device Simulation.
Journal of Computational Electronics, 17, 1492–1504. https://doi.org/10.1007/s10825-018-1225-6 (reposiTUm)

176.   Thesberg, M., Kosina, H., Neophytou, N. (2017).
On the Lorenz Number of Multiband Materials.
Physical Review B, 95(12), 1–14. https://doi.org/10.1103/PhysRevB.95.125206 (reposiTUm)

175.   Reiche, M., Kittler, M., Pippel, E., Kosina, H., Lugstein, A., Uebensee, H. (2016).
Electronic Properties of Dislocations.
Solid State Phenomena, 242, 141–146. https://doi.org/10.4028/www.scientific.net/ssp.242.141 (reposiTUm)

174.   Reiche, M., Kittler, M., Pippel, E., Uebensee, H., Kosina, H., Grill, A., Stanojevic, Z., Baumgartner, O. (2016).
Impact of Defect-Induced Strain on Device Properties.
Advanced Engineering Materials, 18(12), 1–4. (reposiTUm)

173.   Thesberg, M., Kosina, H., Neophytou, N. (2016).
On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites.
Journal of Applied Physics, 120(23), 234302. https://doi.org/10.1063/1.4972192 (reposiTUm)

172.   Glaser, M., Kitzler, A., Johannes, A., Prucnal, S., Potts, H., Conesa-Boj, S., Filipovic, L., Kosina, H., Skorupa, W., Bertagnolli, E., Ronning, C., Fontcuberta i Morral, A., Lugstein, A. (2016).
Synthesis, Morphological, and Electro-Optical Characterizations of Metal/Semiconductor Nanowire Heterostructures.
Nano Letters, 16(6), 3507–3513. https://doi.org/10.1021/acs.nanolett.6b00315 (reposiTUm)

171.   Nazemi, S., Pourfath, M., Soleimani, E. A., Kosina, H. (2016).
The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study.
Journal of Applied Physics, 119(14), 144302. https://doi.org/10.1063/1.4945392 (reposiTUm)

170.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2016).
The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach.
Journal of Electronic Materials, 45(3), 1584–1588. https://doi.org/10.1007/s11664-015-4124-7 (reposiTUm)

169.   Stanojević, Z., Baumgartner, O., Filipović, L., Kosina, H., Karner, M., Kernstock, C., Prause, P. (2015).
Consistent Low-Field Mobility Modeling for Advanced MOS Devices.
Solid-State Electronics, 112, 37–45. https://doi.org/10.1016/j.sse.2015.02.008 (reposiTUm)

168.   Karamitaheri, H., Pourfath, M., Kosina, H., Neophytou, N. (2015).
Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons.
Physical Review B, 91(165410). https://doi.org/10.1103/physrevb.91.165410 (reposiTUm)

167.   Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2015).
Numerical Study of Graphene Superlattice-Based Photodetectors.
IEEE Transactions on Electron Devices, 62(2), 593–600. https://doi.org/10.1109/ted.2014.2383354 (reposiTUm)

166.   Nazemi, S., Pourfath, M., Soleimani, E. A., Kosina, H. (2015).
On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals.
Journal of Applied Physics, 118(20), 205303. https://doi.org/10.1063/1.4936310 (reposiTUm)

165.   Moradinasab, M., Pourfath, M., Kosina, H. (2015).
Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers.
IEEE Journal of Quantum Electronics, 51(1), 1–7. https://doi.org/10.1109/jqe.2014.2373171 (reposiTUm)

164.   Thesberg, M., Pourfath, M., Kosina, H., Neophytou, N. (2015).
The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices.
Journal of Applied Physics, 118(22), 224301. https://doi.org/10.1063/1.4936839 (reposiTUm)

163.   Neophytou, N., Karamitaheri, H., Kosina, H. (2015).
Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study.
Journal of Electronic Materials, 44(6), 1599–1605. https://doi.org/10.1007/s11664-014-3488-4 (reposiTUm)

162.   Karamitaheri, H., Neophytou, N., Kosina, H. (2014).
Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires.
Journal of Applied Physics, 115(2), 024302. https://doi.org/10.1063/1.4858375 (reposiTUm)

161.   Reininger, P., Schwarz, B., Detz, H., MacFarland, D., Zederbauer, T., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2014).
Diagonal-Transition Quantum Cascade Detector.
Applied Physics Letters, 105(9), 091108. https://doi.org/10.1063/1.4894767 (reposiTUm)

160.   Neophytou, N., Kosina, H. (2014).
Gated Si Nanowires for Large Thermoelectric Power Factors.
Applied Physics Letters, 105(7), 073119. https://doi.org/10.1063/1.4893977 (reposiTUm)

159.   Wolf, S., Neophytou, N., Stanojevic, Z., Kosina, H. (2014).
Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes.
Journal of Electronic Materials, 43(10), 3870–3875. https://doi.org/10.1007/s11664-014-3324-x (reposiTUm)

158.   Mojibpour, A., Pourfath, M., Kosina, H. (2014).
Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers.
Optics Express, 22(17), 20607. https://doi.org/10.1364/oe.22.020607 (reposiTUm)

157.   Wolf, S., Neophytou, N., Kosina, H. (2014).
Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness.
Journal of Applied Physics, 115(20), 204306. https://doi.org/10.1063/1.4879242 (reposiTUm)

156.   Neophytou, N., Karamitaheri, H., Kosina, H. (2013).
Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers.
Journal of Computational Electronics, 12(4), 611–622. https://doi.org/10.1007/s10825-013-0522-3 (reposiTUm)

155.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2013).
Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 60(7), 2142–2147. https://doi.org/10.1109/ted.2013.2262049 (reposiTUm)

154.   Karamitaheri, H., Neophytou, N., Kosina, H. (2013).
Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation.
Journal of Applied Physics, 113(20), 204305. https://doi.org/10.1063/1.4808100 (reposiTUm)

153.   Karamitaheri, H., Neophytou, N., Taheri, M. K., Faez, R., Kosina, H. (2013).
Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method.
Journal of Electronic Materials, 42(7), 2091–2097. https://doi.org/10.1007/s11664-013-2533-z (reposiTUm)

152.   Neophytou, N., Kosina, H. (2013).
Optimizing Thermoelectric Power Factor by Means of a Potential Barrier.
Journal of Applied Physics, 114(4), 044315. https://doi.org/10.1063/1.4816792 (reposiTUm)

151.   Neophytou, N., Zianni, X., Kosina, H., Frabboni, S., Lorenzi, B., Narducci, D. (2013).
Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems.
Journal of Electronic Materials, 43(6), 1896–1904. https://doi.org/10.1007/s11664-013-2898-z (reposiTUm)

150.   Neophytou, N., Zianni, X., Kosina, H., Frabboni, S., Lorenzi, B., Narducci, D. (2013).
Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si.
Nanotechnology, 24(20), 205402. https://doi.org/10.1088/0957-4484/24/20/205402 (reposiTUm)

149.   Mennemann, J.-F., Jüngel, A., Kosina, H. (2013).
Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator.
Journal of Computational Physics, 239, 187–205. https://doi.org/10.1016/j.jcp.2012.12.009 (reposiTUm)

148.   Karamitaheri, H., Neophytou, N., Kosina, H. (2013).
Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires.
Journal of Electronic Materials, 43(6), 1829–1836. https://doi.org/10.1007/s11664-013-2884-5 (reposiTUm)

147.   Baumgartner, O., Stanojevic, Z., Schnass, K., Karner, M., Kosina, H. (2013).
VSP - A Quantum-Electronic Simulation Framework.
Journal of Computational Electronics, 12(4), 701–721. https://doi.org/10.1007/s10825-013-0535-y (reposiTUm)

146.   Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2012).
A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 59(2), 433–440. https://doi.org/10.1109/ted.2011.2173690 (reposiTUm)

145.   Schwarz, B., Reininger, P., Detz, H., Zederbauer, T., Maxwell Andrews, A., Kalchmair, S., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2012).
A Bi-Functional Quantum Cascade Device for Same-Frequency Lasing and Detection.
Applied Physics Letters, 101(19), 191109. https://doi.org/10.1063/1.4767128 (reposiTUm)

144.   Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons.
Journal of Applied Physics, 111(7), 074318. https://doi.org/10.1063/1.3702429 (reposiTUm)

143.   Neophytou, N., Kosina, H. (2012).
Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors.
IEEE Electron Device Letters, 33(5), 652–654. https://doi.org/10.1109/led.2012.2188879 (reposiTUm)

142.   Neophytou, N., Kosina, H. (2012).
Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands.
Solid-State Electronics, 70, 81–91. https://doi.org/10.1016/j.sse.2011.11.018 (reposiTUm)

141.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness.
IEEE Transactions on Electron Devices, 59(12), 3527–3532. https://doi.org/10.1109/ted.2012.2218817 (reposiTUm)

140.   Karamitaheri, H., Neophytou, N., Pourfath, M., Faez, R., Kosina, H. (2012).
Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons.
Journal of Applied Physics, 111(5), 054501. https://doi.org/10.1063/1.3688034 (reposiTUm)

139.   Neophytou, N., Kosina, H. (2012).
Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels.
Journal of Applied Physics, 112(2), 024305. https://doi.org/10.1063/1.4737122 (reposiTUm)

138.   Neophytou, N., Kosina, H. (2012).
Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires.
Journal of Computational Electronics, 11(1), 29–44. https://doi.org/10.1007/s10825-012-0383-1 (reposiTUm)

137.   Neophytou, N., Kosina, H. (2012).
On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires.
Journal of Electronic Materials, 41(6), 1305–1311. https://doi.org/10.1007/s11664-011-1891-7 (reposiTUm)

136.   Nematian, H., Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices.
Journal of Applied Physics, 111(9), 093512. https://doi.org/10.1063/1.4710988 (reposiTUm)

135.   Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H. (2012).
Study of Thermal Properties of Graphene-Based Structures Using the Force Constant Method.
Journal of Computational Electronics, 11(1), 14–21. https://doi.org/10.1007/s10825-011-0380-9 (reposiTUm)

134.   Stanojević, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2012).
Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement.
Solid-State Electronics, 70, 73–80. https://doi.org/10.1016/j.sse.2011.11.022 (reposiTUm)

133.   Goharrizi, A. Y., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2011).
An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 58(11), 3725–3735. https://doi.org/10.1109/ted.2011.2163719 (reposiTUm)

132.   Neophytou, N., Kosina, H. (2011).
Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation.
Physical Review B, 84(085313). https://doi.org/10.1103/physrevb.84.085313 (reposiTUm)

131.   Neophytou, N., Kosina, H. (2011).
Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires.
Physical Review B, 83(245305). https://doi.org/10.1103/physrevb.83.245305 (reposiTUm)

130.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices.
Journal of Applied Physics, 110(5), 054506. https://doi.org/10.1063/1.3629990 (reposiTUm)

129.   Karamitaheri, H., Pourfath, M., Pazoki, M., Faez, R., Kosina, H. (2011).
Graphene-Based Antidots for Thermoelectric Applications.
Journal of The Electrochemical Society, 158(12), K213. https://doi.org/10.1149/2.025112jes (reposiTUm)

128.   Neophytou, N., Kosina, H. (2011).
Hole Mobility Increase in Ultra-Narrow Si Channels Under Strong (110) Surface Confinement.
Applied Physics Letters, 99(9), 092110. https://doi.org/10.1063/1.3631680 (reposiTUm)

127.   Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Montalenti, F., Miglio, L. (2011).
Strained MOSFETs on Ordered SiGe Dots.
Solid-State Electronics, 65–66, 81–87. https://doi.org/10.1016/j.sse.2011.06.041 (reposiTUm)

126.   Neophytou, N., Klimeck, G., Kosina, H. (2011).
Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities.
Journal of Applied Physics, 109(5), 053721. https://doi.org/10.1063/1.3556435 (reposiTUm)

125.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the Sp3d5s*-So Atomistic Tight-Binding Model and Boltzmann Transport.
Journal of Electronic Materials, 40(5), 753–758. https://doi.org/10.1007/s11664-011-1542-z (reposiTUm)

124.   Milovanovic, G., Kosina, H. (2010).
A Semiclassical Transport Model for Quantum Cascade Lasers Based on the Pauli Master Equation.
Journal of Computational Electronics, 9(3–4), 211–217. https://doi.org/10.1007/s10825-010-0325-8 (reposiTUm)

123.   Neophytou, N., Wagner, M., Kosina, H., Selberherr, S. (2010).
Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model.
Journal of Electronic Materials, 39(9), 1902–1908. https://doi.org/10.1007/s11664-009-1035-5 (reposiTUm)

122.   Lugstein, A., Steinmair, M., Steiger, A., Kosina, H., Bertagnolli, E. (2010).
Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires.
Nano Letters, 10(8), 3204–3208. https://doi.org/10.1021/nl102179c (reposiTUm)

121.   Nedjalkov, M., Kosina, H., Schwaha, P. (2010).
Device Modeling in the Wigner Picture.
Journal of Computational Electronics, 9(3–4), 218–223. https://doi.org/10.1007/s10825-010-0316-9 (reposiTUm)

120.   Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2010).
Electron Subband Structure in Strained Silicon UTB Films From the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation.
Solid-State Electronics, 54(2), 143–148. https://doi.org/10.1016/j.sse.2009.12.010 (reposiTUm)

119.   Neophytou, N., Kosina, H. (2010).
Large Enhancement in Hole Velocity and Mobility in P-Type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis.
Nano Letters, 10(12), 4913–4919. https://doi.org/10.1021/nl102875k (reposiTUm)

118.   Neophytou, N., Kim, S. G., Klimeck, G., Kosina, H. (2010).
On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias.
Journal of Applied Physics, 107(11), 113701. https://doi.org/10.1063/1.3372764 (reposiTUm)

117.   Pourfath, M., Kosina, H. (2009).
Computational Study of Carbon-Based Electronics.
Journal of Computational Electronics, 8(3–4), 427–440. https://doi.org/10.1007/s10825-009-0285-z (reposiTUm)

116.   Milovanovic, G., Baumgartner, O., Kosina, H. (2009).
On Open Boundary Conditions for Quantum Cascade Structures.
Optical and Quantum Electronics, 41(11–13), 921–932. https://doi.org/10.1007/s11082-010-9406-y (reposiTUm)

115.   Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2008).
Current Transport Models for Nanoscale Semiconductor Devices.
Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 (reposiTUm)

114.   Karlowatz, G., Wessner, W., Kosina, H. (2008).
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
Mathematics and Computers in Simulation, 79(4), 972–979. https://doi.org/10.1016/j.matcom.2008.02.021 (reposiTUm)

113.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Electron Subband Dispersions in Ultra-Thin Silicon Films From a Two-Band K·p Theory.
Journal of Computational Electronics, 7(3), 164–167. https://doi.org/10.1007/s10825-008-0177-7 (reposiTUm)

112.   Pourfath, M., Kosina, H. (2008).
Formalism Application of the Non-Equilibrium Green’s Function for the Numerical Analysis of Carbon Nanotube Fets.
Journal of Computational and Theoretical Nanoscience, 5(6), 1128–1137. https://doi.org/10.1166/jctn.2008.011 (reposiTUm)

111.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Numerical Study of Quantum Transport in Carbon Nanotube Transistors.
Mathematics and Computers in Simulation, 79(4), 1051–1059. https://doi.org/10.1016/j.matcom.2007.09.004 (reposiTUm)

110.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
Journal of Physics: Conference Series, 109, 012029. https://doi.org/10.1088/1742-6596/109/1/012029 (reposiTUm)

109.   Ungersboeck, E., Gös, W., Dhar, S., Kosina, H., Selberherr, S. (2008).
The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon.
Mathematics and Computers in Simulation, 79(4), 1071–1077. https://doi.org/10.1016/j.matcom.2007.10.004 (reposiTUm)

108.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2008).
Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 (reposiTUm)

107.   Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S. (2007).
A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications.
Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 (reposiTUm)

106.   Li, L., Meller, G., Kosina, H. (2007).
Analytical Conductivity Model for Doped Organic Semiconductors.
Journal of Applied Physics, 101(3), 033716. https://doi.org/10.1063/1.2472282 (reposiTUm)

105.   Li, L., Meller, G., Kosina, H. (2007).
Carrier Concentration Dependence of the Mobility in Organic Semiconductors.
Synthetic Metals, 157(4–5), 243–246. https://doi.org/10.1016/j.synthmet.2007.03.002 (reposiTUm)

104.   Palestri, P., Barin, N., Brunel, D., Busseret, C., Campera, A., Childs, P., Driussi, F., Fiegna, C., Fiori, G., Gusmeroli, R., Iannaccone, G., Karner, M., Kosina, H., Lacaita, A. L., Langer, E., Majkusiak, B., Monzio Compagnoni, C., Poncet, A., Sangiorgi, E., … Walczak, J. (2007).
Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks.
IEEE Transactions on Electron Devices, 54(1), 106–114. https://doi.org/10.1109/ted.2006.887226 (reposiTUm)

103.   Li, L., Meller, G., Kosina, H. (2007).
Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes.
Applied Physics Letters, 91(17), 172111. https://doi.org/10.1063/1.2801702 (reposiTUm)

102.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Dissipative Transport in CNTFETs.
Journal of Computational Electronics, 6(1–3), 321–324. https://doi.org/10.1007/s10825-006-0113-7 (reposiTUm)

101.   Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., Selberherr, S. (2007).
Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass.
IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 (reposiTUm)

100.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Geometry Optimization for Carbon Nanotube Transistors.
Solid-State Electronics, 51(11–12), 1565–1571. https://doi.org/10.1016/j.sse.2007.09.021 (reposiTUm)

99.   Li, L., Meller, G., Kosina, H. (2007).
Influence of Traps on Charge Transport in Organic Semiconductors.
Solid-State Electronics, 51(3), 445–448. https://doi.org/10.1016/j.sse.2007.01.024 (reposiTUm)

98.   KOSINA, H. (2007).
Nanoelectronic Device Simulation Based on the Wigner Function Formalism.
International Journal of High Speed Electronics and Systems, 17(03), 475–484. https://doi.org/10.1142/s0129156407004667 (reposiTUm)

97.   Ungersboeck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
Journal of Computational Electronics, 6(1–3), 55–58. https://doi.org/10.1007/s10825-006-0047-0 (reposiTUm)

96.   Wagner, M., Karner, M., Cervenka, J., Vasicek, M., Kosina, H., Holzer, S., Grasser, T. (2007).
Quantum Correction for DG MOSFETs.
Journal of Computational Electronics, 5(4), 397–400. https://doi.org/10.1007/s10825-006-0032-7 (reposiTUm)

95.   Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon.
IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 (reposiTUm)

94.   Pourfath, M., Kosina, H. (2007).
The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors.
Nanotechnology, 18(42), 424036. https://doi.org/10.1088/0957-4484/18/42/424036 (reposiTUm)

93.   Sverdlov, V., Ungersboeck, S. E., Kosina, H. (2007).
Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain.
IEEE Transactions on Nanotechnology, 6(3), 334–340. https://doi.org/10.1109/tnano.2007.894835 (reposiTUm)

92.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Tunneling CNTFETs.
Journal of Computational Electronics, 6(1–3), 243–246. https://doi.org/10.1007/s10825-006-0099-1 (reposiTUm)

91.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2007).
VSP - A Gate Stack Analyzer.
Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 (reposiTUm)

90.   Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2007).
Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations.
Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 (reposiTUm)

89.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
Journal of Computational Electronics, 5(2–3), 155–159. https://doi.org/10.1007/s10825-006-8836-z (reposiTUm)

88.   Kosina, H., Selberherr, S. (2006).
Device Simulation Demands of Upcoming Microelectronic Devices.
International Journal of High Speed Electronics and Systems, 16(01), 115–136. https://doi.org/10.1142/s0129156406003576 (reposiTUm)

87.   Karner, M., Gehring, A., Kosina, H. (2006).
Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics.
Journal of Computational Electronics, 5(2–3), 161–165. https://doi.org/10.1007/s10825-006-8837-y (reposiTUm)

86.   Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., Selberherr, S. (2006).
High-Field Electron Mobility Model for Strained-Silicon Devices.
IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 (reposiTUm)

85.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling Current Transport in Ultra-Scaled Field-Effect Transistors.
Microelectronics Reliability, 47(1), 11–19. https://doi.org/10.1016/j.microrel.2006.03.009 (reposiTUm)

84.   Ungersboeck, E., Kosina, H. (2006).
Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers.
Journal of Computational Electronics, 5(2–3), 79–83. https://doi.org/10.1007/s10825-006-8823-4 (reposiTUm)

83.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Rigorous Modeling of Carbon Nanotube Transistors.
Journal of Physics: Conference Series, 38, 29–32. https://doi.org/10.1088/1742-6596/38/1/008 (reposiTUm)

82.   Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S. (2006).
Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices.
Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 (reposiTUm)

81.   Meller, G., Li, L., Holzer, S., Kosina, H. (2006).
Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems.
Optical and Quantum Electronics, 38(12–14), 993–1004. https://doi.org/10.1007/s11082-006-9051-7 (reposiTUm)

80.   Li, L., Meller, G., Kosina, H. (2006).
Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors.
Microelectronics Journal, 38(1), 47–51. https://doi.org/10.1016/j.mejo.2006.09.022 (reposiTUm)

79.   Kosina, H. (2006).
Wigner Function Approach to Nano Device Simulation.
International Journal of Computational Science and Engineering, 2(3/4), 100. https://doi.org/10.1504/ijcse.2006.012762 (reposiTUm)

78.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., Selberherr, S. (2005).
Electron Mobility Model for Strained-Si Devices.
IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788 (reposiTUm)

77.   Castro, L. C., John, D. L., Pulfrey, D. L., Pourfath, M., Gehring, A., Kosina, H. (2005).
Method for Predicting F/Sub T/ for Carbon Nanotube FETs.
IEEE Transactions on Nanotechnology, 4(6), 699–704. https://doi.org/10.1109/tnano.2005.858603 (reposiTUm)

76.   Ayalew, T., Grasser, T., Kosina, H., Selberherr, S. (2005).
Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices.
Materials Science Forum, 483–485, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845 (reposiTUm)

75.   Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Selberherr, S. (2005).
Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data.
Journal of Applied Physics, 97(9), 093710. https://doi.org/10.1063/1.1883311 (reposiTUm)

74.   Pourfath, M., Ungersboeck, E., Gehring, A., Kosina, H., Selberherr, S., PARK, W.-J., Cheong, B.-H. (2005).
Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors.
Journal of Computational Electronics, 4(1–2), 75–78. https://doi.org/10.1007/s10825-005-7111-z (reposiTUm)

73.   Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B. H., Park, W. J., Kosina, H., Selberherr, S. (2005).
Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors.
Microelectronic Engineering, 81(2–4), 428–433. https://doi.org/10.1016/j.mee.2005.03.043 (reposiTUm)

72.   Ungersboeck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.-J., Selberherr, S. (2005).
Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors.
IEEE Transactions on Nanotechnology, 4(5), 533–538. https://doi.org/10.1109/tnano.2005.851402 (reposiTUm)

71.   Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005).
Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach.
Solid-State Electronics, 49(9), 1510–1515. https://doi.org/10.1016/j.sse.2005.07.013 (reposiTUm)

70.   Pourfath, M., Gehring, A., Ungersboeck, E., Kosina, H., Selberherr, S., Cheong, B. H., Park, W. J. (2005).
Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors.
Journal of Applied Physics, 97(10), 106103. https://doi.org/10.1063/1.1897491 (reposiTUm)

69.   Gehring, A., Kosina, H. (2005).
Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method.
Journal of Computational Electronics, 4(1–2), 67–70. (reposiTUm)

68.   Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., Selberherr, S. (2004).
A Non-Parabolic Six Moments Model for the Simulation of Sub-100 Nm Semiconductor Devices.
Journal of Computational Electronics, 3(3–4), 183–187. https://doi.org/10.1007/s10825-004-7041-1 (reposiTUm)

67.  M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology, 19 (2004), 4; 226 - 228. https://doi.org/10.1088/0268-1242/19/4/076

66.  S. Smirnov, H. Kosina:
"Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates";
Solid-State Electronics (invited), 48 (2004), 1325 - 1335. https://doi.org/10.1016/j.sse.2004.01.014

65.  M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
Monte Carlo Methods and Applications, 10 (2004), 3-4; 461 - 468. https://doi.org/10.1515/mcma.2004.10.3-4.461

64.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224 (2004), 1-4; 361 - 364. https://doi.org/10.1016/j.apsusc.2003.09.034

63.  Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
"Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
SIAM Journal on Applied Mathematics, 64 (2004), 6; 1933 - 1953. https://doi.org/10.1137/S0036139903428914

62.  H. Kosina, M Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model";
Monte Carlo Methods and Applications, 10 (2004), 3-4; 359 - 368. https://doi.org/10.1515/mcma.2004.10.3-4.359

61.  M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
"Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
Physical Review B, 70 (2004), 115319; 1 - 16. https://doi.org/10.1103/PhysRevB.70.115319

60.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Journal of Computational Electronics, 2 (2003), 2-4; 147 - 151. https://doi.org/10.1023/B:JCEL.0000011416.93047.69

59.  J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47 (2003), 2; 275 - 281. https://doi.org/10.1016/S0038-1101(02)00207-1

58.  T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91 (2003), 2; 251 - 274. https://doi.org/10.1109/JPROC.2002.808150

57.  H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Mathematics and Computers in Simulation, 62 (2003), 3-6; 367 - 375. https://doi.org/10.1016/S0378-4754(02)00245-8

56.  A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Journal of Computational Electronics, 2 (2003), 2-4; 219 - 223. https://doi.org/10.1023/B:JCEL.0000011428.85286.7d

55.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39 (2003), 8; 691 - 692. https://doi.org/10.1049/el:20030440

54.  T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13 (2003), 3; 873 - 901. https://doi.org/10.1142/S012915640300206X

53.  S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
IEICE Transactions on Electronics, E86-C (2003), 3; 350 - 356.

52.  A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability, 43 (2003), 9-11; 1495 - 1500. https://doi.org/10.1016/S0026-2714(03)00265-8

51.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Mathematics and Computers in Simulation, 62 (2003), 3-6; 453 - 461. https://doi.org/10.1016/S0378-4754(02)00246-X

50.  S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics, 94 (2003), 9; 5791 - 5799. https://doi.org/10.1063/1.1616982

49.  V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
"Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
Physics of Low-dimensional Structures, 5-6 (2003), 99 - 108.

48.  H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
International Journal of High Speed Electronics and Systems (invited), 13 (2003), 13; 727 - 769.

47.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Microelectronics Journal, 34 (2003), 5-8; 443 - 445. https://doi.org/10.1016/S0026-2692(03)00069-7

46.  H. Kosina, M. Nedjalkov, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. I. Theory";
Journal of Applied Physics, 93 (2003), 6; 3553 - 3563. https://doi.org/10.1063/1.1544654

45.  M. Nedjalkov, H. Kosina, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
Journal of Applied Physics, 93 (2003), 6; 3564 - 3571. https://doi.org/10.1063/1.1544655

44.  M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Journal of Computational Electronics, 1 (2002), 1-2; 27 - 31. https://doi.org/10.1023/A:1020799224110

43.  M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Wigner Equation with Quantum Electron-Phonon Interaction";
Microelectronic Engineering, 63 (2002), 1-3; 199 - 203. https://doi.org/10.1016/S0167-9317(02)00625-1

42.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80 (2002), 4; 613 - 615. https://doi.org/10.1063/1.1445273

41.  H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1 (2002), 3; 371 - 374. https://doi.org/10.1023/A:1020703709031

40.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91 (2002), 6; 3869 - 3879. https://doi.org/10.1063/1.1450257

39.  T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Physica B: Condensed Matter, 314 (2002), 1-4; 301 - 304. https://doi.org/10.1016/S0921-4526(01)01417-X

38.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik (invited), 444 (2002), 28 - 41.

37.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik (invited), 444 (2002), 18 - 27.

36.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49 (2002), 10; 1814 - 1820. https://doi.org/10.1109/TED.2002.803645

35.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92 (2002), 10; 6019 - 6027. https://doi.org/10.1063/1.1516617

34.  M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80 (2002), 4; 607 - 609. https://doi.org/10.1063/1.1447002

33.  M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
VLSI Design, 13 (2001), 1-4; 405 - 411. https://doi.org/10.1155/2001/54247

32.  F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices, 48 (2001), 9; 1878 - 1884.

31.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45 (2001), 5; 621 - 627. https://doi.org/10.1016/S0038-1101(01)00080-6

30.  T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90 (2001), 12; 6165 - 6171. https://doi.org/10.1063/1.1415366

29.  T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79 (2001), 12; 1900 - 1902. https://doi.org/10.1063/1.1405000

28.  H. Kosina, M. Nedjalkov:
"The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices";
Mathematics and Computers in Simulation, 55 (2001), 93 - 102.

27.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90 (2001), 5; 2389 - 2396. https://doi.org/10.1063/1.1389757

26.  M. Nedjalkov, H. Kosina:
"Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
Mathematics and Computers in Simulation, 55 (2001), 1-3; 191 - 198.

25.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
Journal of Applied Physics, 87 (2000), 9; 4308 - 4314. https://doi.org/10.1063/1.373070

24.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
IEICE Transactions on Electronics, E83-C (2000), 8; 1218 - 1223.

23.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Theory of the Monte Carlo Method for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 47 (2000), 10; 1898 - 1908. https://doi.org/10.1109/16.870569

22.  H. Kosina:
"A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis";
IEEE Transactions on Electron Devices, 46 (1999), 6; 1196 - 1200.

21.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43 (1999), 9; 1791 - 1795. https://doi.org/10.1016/S0038-1101(99)00132-X

20.  K. Zankel, H. Kosina:
"Capacitance Simulation of Irradiated Semiconductor Detectors";
Il Nuovo Cimento, 112 (1999), 1-2; 43 - 47.

19.  C. Wasshuber, H. Kosina, S. Selberherr:
"A Comparative Study of Single-Electron Memories";
IEEE Transactions on Electron Devices, 45 (1998), 11; 2365 - 2371. https://doi.org/10.1109/16.726659

18.  H. Kosina, M. Harrer:
"A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
VLSI Design, 6 (1998), 1-4; 205 - 208. https://doi.org/10.1155/1998/83430

17.  G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
VLSI Design, 6 (1998), 1-4; 209 - 212. https://doi.org/10.1155/1998/87014

16.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics, 83 (1998), 6; 3096 - 3101. https://doi.org/10.1063/1.367067

15.  H. Kosina, G. Kaiblinger-Grujin:
"Ionized-Impurity Scattering of Majority Electrons in Silicon";
Solid-State Electronics, 42 (1998), 3; 331 - 338. https://doi.org/10.1016/S0038-1101(97)00199-8

14.  H. Kosina, C. Troger:
"SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands";
VLSI Design, 8 (1998), 1-4; 489 - 493. https://doi.org/10.1155/1998/39231

13.  C. Wasshuber, H. Kosina:
"Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge";
VLSI Design, 6 (1998), 1-4; 35 - 38. https://doi.org/10.1155/1998/53694

12.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
VLSI Design, 8 (1998), 1-4; 219 - 223. https://doi.org/10.1155/1998/83017

11.  C. Wasshuber, H. Kosina:
"A Single-Electron Device and Circuit Simulator";
Superlattices and Microstructures, 21 (1997), 1; 37 - 42. https://doi.org/10.1006/spmi.1996.0138

10.  C. Wasshuber, H. Kosina, S. Selberherr:
"A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling";
IEEE Journal of Technology Computer Aided Design, 1 (1997), 7; 1 - 18. https://doi.org/10.1109/TCAD.1996.6449164

9.  H. Kosina:
"Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations";
Physica Status Solidi A, 163 (1997), 2; 475 - 489.

8.   Kaiblinger-Grujin, G., Kosina, H., Köpf, Ch., Selberherr, S. (1997).
Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors.
Materials Science Forum, 258–263, 939–944. https://doi.org/10.4028/www.scientific.net/msf.258-263.939 (reposiTUm)

7.  C. Köpf, H. Kosina, S. Selberherr:
"Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
Solid-State Electronics, 41 (1997), 8; 1139 - 1152. https://doi.org/10.1016/S0038-1101(97)00051-8

6.  C. Wasshuber, H. Kosina, S. Selberherr:
"SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 9; 937 - 944. https://doi.org/10.1109/43.658562

5.   Kosina, H., Langer, E., Selberherr, S. (1995).
Device Modelling for the 1990s.
Microelectronics Journal, 26(2–3), 217–233. https://doi.org/10.1016/0026-2692(95)98923-f (reposiTUm)

4.   Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Lindorfer, P., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S. (1995).
The Viennese Integrated System for Technology CAD Applications.
Microelectronics Journal, 26(2–3), 137–158. https://doi.org/10.1016/0026-2692(95)98918-h (reposiTUm)

3.   Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessene, F., Dollfus, P., Dutton, R., Engl, W. L., Fauquembergue, R., Fiegna, C., Fischetti, M. V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., … Yoshii, A. (1994).
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon.
IEEE Transactions on Electron Devices, 41(9), 1646–1654. https://doi.org/10.1109/16.310119 (reposiTUm)

2.   Kosina, H., Selberherr, S. (1994).
A Hybrid Device Simulator That Combines Monte Carlo and Drift-Diffusion Analysis.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(2), 201–210. https://doi.org/10.1109/43.259943 (reposiTUm)

1.   Kosina, H., Selberherr, S. (1990).
Coupling of Monte Carlo and Drift Diffusion Method With Applications to Metal Oxide Semiconductor Field Effect Transistors.
Japanese Journal of Applied Physics, 29(12A), L2283. https://doi.org/10.1143/jjap.29.l2283 (reposiTUm)

Contributions to Books

24.   Indalecio, G., Kosina, H. (2020).
Monte Carlo Simulation of Electron-Electron Interactions in Bulk Silicon.
In G. Nicosia, V. Romano (Eds.), Scientific Computing in Electrical Engineering (pp. 125–131). Springer International Publishing. https://doi.org/10.1007/978-3-030-44101-2_12 (reposiTUm)

23.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2012).
Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers.
In K. K. Sabelfeld, I. Dimov (Eds.), Monte Carlo Methods and Applications (pp. 59–67). De Gruyter. (reposiTUm)

22.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices.
In Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (Eds.), ECS Transactions (pp. 185–192). ECS Transactions. https://doi.org/10.1149/1.3569910 (reposiTUm)

21.   Pourfath, M., Kosina, H. (2011).
Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors.
In H. Nalwa (Ed.), Encyclopedia of Nanoscience and Nanotechnology (pp. 541–581). American Scientific Publishers. (reposiTUm)

20.   Nedjalkov, M., Querlioz, D., Dollfus, P., Kosina, H. (2011).
Wigner Function Approach.
In D. Vasileska, S. M. Goodnick (Eds.), Nano-Electronic Devices (pp. 289–358). Springer New York. https://doi.org/10.1007/978-1-4419-8840-9_5 (reposiTUm)

19.   Kosina, H. (2008).
Nanoelectronic Device Simulation Based on the Wigner Function Formalism.
In Physics and Modeling of Tera- and Nano-Devices (pp. 31–40). World Scientific Publishing Co. (reposiTUm)

18.   Sverdlov, V., Ungersboeck, E., Kosina, H. (2007).
Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.
In S. Hall, A. Nazarov, V. Lysenko (Eds.), Nanoscaled Semiconductor-on-Insulator Structures and Devices (pp. 357–362). Springer Netherlands. https://doi.org/10.1007/978-1-4020-6380-0_23 (reposiTUm)

17.   Karlowatz, G., Ungersböck, S. E., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 443–450). ECS Transactions. https://doi.org/10.1149/1.2355842 (reposiTUm)

16.   Kosina, H., Selberherr, S. (2006).
Device Simulation Demands of Upcoming Microelectronics Devices.
In H. Iwai, Y. Nishida, M. Shur, H. Wong (Eds.), International Journal of High Speed Electronics and Systems (pp. 115–136). World Scientific Publishing Co. https://doi.org/10.1142/s0129156406003576 (reposiTUm)

15.   Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2006).
Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics.
In S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (Eds.), ECS Transactions (pp. 693–703). ECS Transactions. https://doi.org/10.1149/1.2209316 (reposiTUm)

14.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 45–54). ECS Transactions. https://doi.org/10.1149/1.2355793 (reposiTUm)

13.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (Eds.), ECS Transactions (pp. 207–216). ECS Transactions. https://doi.org/10.1149/1.2813493 (reposiTUm)

12.   Karner, M., Holzer, S., Gös, W., Vasicek, M., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (Eds.), ECS Transactions (pp. 299–308). ECS Transactions. https://doi.org/10.1149/1.2355721 (reposiTUm)

11.   Kosina, H., Nedjalkov, M. (2006).
Wigner Function-Based Device Modeling.
In Handbook of Theoretical and Computational Nanotechnology (pp. 731–763). American Scientific Publishers. (reposiTUm)

10.   Sverdlov, V., Kinkhabwala, Y., Kaplan, D., Korotkov, A. N., Kosina, H., Selberherr, S. (2005).
Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays.
In Unsolved Problems of Noise and Fluctuations (pp. 177–182). American Institute of Physics. (reposiTUm)

9.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, 170 - 177. https://doi.org/10.1007/978-3-540-24588-9_18

8.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, 178 - 184. https://doi.org/10.1007/978-3-540-24588-9_19

7.  S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, 185 - 193. https://doi.org/10.1007/978-3-540-24588-9_20

6.  T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in: "Advanced Device Modeling and Simulation", T. Grasser (ed.); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

5.  H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
in: "Advanced Device Modeling and Simulation", T. Grasser (ed.); World Scientific Publishing Co., Singapore, 2003, (invited), ISBN: 9-812-38607-6, 27 - 69.

4.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2179; S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2001, ISBN: 3-540-43043-1, 175 - 182. https://doi.org/10.1007/3-540-45346-6_17

3.  M. Nedjalkov, T.V. Gurov, H. Kosina, P.A. Whitlock:
"Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2179; S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2001, ISBN: 978-3-540-43043-8, 183 - 190. https://doi.org/10.1007/3-540-45346-6_18

2.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity and Beyond";
in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed.); John Wiley & Sons, 1999, (invited), ISBN: 0-471-32183-4, 313 - 322.

1.   Kosina, H., Wimmer, K., Fischer, C., Selberherr, S. (1991).
Simulation of ULSI Processes and Devices.
In M. Doyama (Ed.), Computer Aided Innovation of New Materials (pp. 723–728). North Holland Publishing Company. (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

360.   Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2023).
Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase.
In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (p. 116), Mauterndorf, Austria. (reposiTUm)

359.   Kosina, H., Gull, J. (2023).
Effect of Electron-Electron Scattering on the Energy Distribution in Semiconductor Devices.
In Book of abstracts of the International Workshop on Computational Nanotechnology (IWCN) (pp. 62–63), Barcelona, Spain. (reposiTUm)

358.   Gull, J., Kosina, H. (2023).
Monte-Carlo Investigation of Energy Distributions in FET Channels.
In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) : Programme, Tarragona, Spain. (reposiTUm)

357.   Sverdlov, V., Seiler, H., El-Sayed, A., Illarionov, Y., Kosina, H., Selberherr, S. (2022).
Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T.
In International Conference on Physics and its Application 2022 (pp. 36–37), San Francisco, USA. (reposiTUm)

356.   Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2022).
Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase.
In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 48–49), Lihue, HI, United States. (reposiTUm)

355.   Kosina, H. (2022).
Particle Models for Electron-Electron Scattering.
In Book of Abstracts Quantum Transport Methods and Algorithms: From Particles to Waves Approaches (p. 10), Zurich, Switzerland. (reposiTUm)

354.   El-Sayed, A., Seiler, H., Kosina, H., Selberherr, S., Sverdlov, V. (2021).
Ab-Initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons.
In WINDS Book of Abstracts (pp. 79–80), Kona. (reposiTUm)

353.   Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2021).
Ballistic Conductance, K. P Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition, Montreux, Austria. (reposiTUm)

352.   Sverdlov, V., Seiler, H., El-Sayed, A., Kosina, H. (2021).
Conductance Due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560173 (reposiTUm)

351.   El-Sayed, A., Seiler, H., Kosina, H., Sverdlov, V. (2021).
First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons.
In Book of Abstracts of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 113–114), Caen, France. (reposiTUm)

350.   El-Sayed, A., Seiler, H., Kosina, H., Jech, M., Waldhör, D., Sverdlov, V. (2021).
First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons With Realistic Terminations.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560183 (reposiTUm)

349.   Kampl, M., Kosina, H., Waltl, M. (2021).
Improved Sampling Algorithms for Monte Carlo Device Simulation.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 53–54). (reposiTUm)

348.   Kosina, H., Seiler, H., Sverdlov, V. (2021).
Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 2–3). (reposiTUm)

347.   Kosik, R., Cervenka, J., Kosina, H. (2021).
Open Boundary Conditions for the Wigner and the Characteristic Von Neumann Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 42–43), Waikoloa, Hawaii, USA. (reposiTUm)

346.   Kosik, R., Cervenka, J., Thesberg, M., Kosina, H. (2020).
A Revised Wigner Function Approach for Stationary Quantum Transport.
In Large-Scale Scientific Computing: 12th International Conference, LSSC 2019 (pp. 403–410), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-030-41032-2_46 (reposiTUm)

345.   Kosina, H., Seiler, H., Sverdlov, V. (2020).
Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS₂ Nanoribbons.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241650 (reposiTUm)

344.   Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2020).
Ballistic Conductance in a Topological 1t'-MoS2 Nanoribbon.
In Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO) (pp. 200–201), Minsk, Belarus - virtual. (reposiTUm)

343.   Kosik, R., Cervenka, J., Kosina, H. (2020).
Numerical Solution of the Constrained Wigner Equation.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241624 (reposiTUm)

342.   Sverdlov, V., El-Sayed, A., Selberherr, S., Kosina, H. (2020).
Topologically Protected and Conventional Subbands in a 1t'-MoS2 Nanoribbon Channel.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis49407.2020.9365289 (reposiTUm)

341.   Sverdlov, V., Kosina, H. (2020).
Topologically Protected and Conventional Subbands in a 1T’ -MoS2 Nanoribbon Channel.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365289 (reposiTUm)

340.   Kosik, R., Kosina, H. (2019).
A Revised Wigner Function Approach for Stationary Quantum Transport.
In Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC) (pp. 70–71), Sozopol, Bulgaria. (reposiTUm)

339.   Kosina, H., Indalecio, G. (2019).
A Two-Particle Monte Carlo Method for Carrier Transport in the Presence of Electron-Electron Scattering.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 93–94), Evanston, IL, United States. (reposiTUm)

338.   Kosina, H., Kampl, M. (2019).
Current Estimation in Backward Monte Carlo Simulations.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 129–130), Evanston, IL, United States. (reposiTUm)

337.   Kosik, R., Thesberg, M., Weinbub, J., Kosina, H. (2019).
On the Consistency of the Stationary Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 30–31), Waikoloa, Hawaii, USA. (reposiTUm)

336.   Kosina, H., Kampl, M. (2018).
Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551734 (reposiTUm)

335.   Indalecio, G., Kosina, H. (2018).
Monte Carlo Simulation of Electron-Electron Interactions in Bulk Silicon.
In Book of Abstracts of The 12th International Conference on Scientific Computing in Electrical Engineering (pp. 97–98), Taormina, Italy. (reposiTUm)

334.   Kampl, M., Kosina, H., Baumgartner, O. (2017).
Hot Carrier Study Including E-E Scattering Based on a Backward Monte Carlo Method.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085322 (reposiTUm)

333.   Kampl, M., Kosina, H. (2017).
Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 147–148), Windermere, United Kingdom. (reposiTUm)

332.   Thesberg, M., Kosina, H. (2017).
NEGF Through Finite-Volume Discretization.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 173–174), Windermere, United Kingdom. (reposiTUm)

331.   Kosik, R., Kampl, M., Kosina, H. (2017).
On the Characteristic Neumann Equation and the Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 26–27), Waikoloa, Hawaii, USA. (reposiTUm)

330.   Thesberg, M., Neophytou, N., Kosina, H. (2016).
Calculating the Power Factor of Nano-Composite Materials From Fully Quantum-Mechanical Large-Scale Simulations.
In Book of Abstracts 14th European Conference on Thermoelectrics, Nancy, Austria. (reposiTUm)

329.   Neophytou, N., Thesberg, M., Kosina, H. (2016).
Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations.
In Book of Abstracts 14th European Conference on Thermoelectrics, Nancy, Austria. (reposiTUm)

328.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 301–308), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_33 (reposiTUm)

327.   Kefayati, A., Pourfath, M., Kosina, H. (2015).
A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 7–8), Urbana-Champaign, IL, USA. (reposiTUm)

326.   Neophytou, N., Thesberg, M., Pourfath, M., Kosina, H. (2015).
Calculations of the Thermopower in Materials With Nano-Inclusions Using Quantum Mechanical Simulations.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

325.   Baumgartner, O., Filipovic, L., Kosina, H., Karner, M., Stanojevic, Z., Cheng-Karner, H. (2015).
Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292294 (reposiTUm)

324.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations.
In Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT) (p. 1), Dresden, Germany. (reposiTUm)

323.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

322.   Nazemi, S., Soleimani, E., Pourfath, M., Kosina, H. (2015).
The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 333–336), Washington, DC, United States. (reposiTUm)

321.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Thermoelectric Efficiency Improvements Through Grain Shape Optimization: A Non-Equilibrium Green's Function Study.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 70), Sozopol, Bulgaria. (reposiTUm)

320.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF.
In Proceedings of the International Workshop on Computational Electronics (IWCE) (p. 4), Urbana-Champaign, IL, USA. (reposiTUm)

319.   Filipovic, L., Stanojevic, Z., Baumgartner, O., Kosina, H. (2014).
3D Modeling of Direct Band-To-Band Tunneling in Nanowire TFETs.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

318.   Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2014).
A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors.
In Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 1–2), Vancouver, Canada. (reposiTUm)

317.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 1), Taormina, Italy. (reposiTUm)

316.   Moradinasab, M., Pourfath, M., Kosina, H. (2014).
An Instability Study in Terahertz Quantum Cascade Lasers.
In Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN) (p. 10), Savannah, GA, USA. (reposiTUm)

315.   Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H. (2014).
BTB Tunneling in InAs/Si Heterojunctions.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931609 (reposiTUm)

314.   Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H. (2014).
Band-To-Band Tunneling in 3D Devices.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 13–14), Urbana-Champaign, IL, USA. (reposiTUm)

313.   Stanojevic, Z., Baumgartner, O., Filipovic, L., Kosina, H. (2014).
Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

312.   Stanojevic, Z., Filipovic, L., Baumgartner, O., Kosina, H. (2014).
Fast Methods for Full-Band Mobility Calculation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 51–52), Urbana-Champaign, IL, USA. (reposiTUm)

311.   Neophytou, N., Kosina, H. (2014).
Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach.
In Book of Abstracts (p. 1), Vienna, Austria. (reposiTUm)

310.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
Full-Band Modeling of Mobility in P-Type FinFETs.
In 2014 IEEE Silicon Nanoelectronics Workshop (pp. 83–84), Honolulu. (reposiTUm)

309.   Neophytou, N., Karamitaheri, H., Kosina, H. (2014).
Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 1), Taormina, Italy. (reposiTUm)

308.   Stanojevic, Z., Filipovic, L., Baumgartner, O., Karner, M., Kernstock, C., Kosina, H. (2014).
Full-Band Transport in Ultra-Narrow P-Type Si Channels: Field, Orientation, Strain.
In Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS) (p. 4), Bologna, Austria. (reposiTUm)

307.   Moradinasab, M., Pourfath, M., Kosina, H. (2014).
Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers.
In International Quantum Cascade Lasers School, Workshop 2014 (pp. 182–183), Monte Verita, Ascona, Switzerland. (reposiTUm)

306.   Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M. (2014).
Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931577 (reposiTUm)

305.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931593 (reposiTUm)

304.   Touski, S., Chaghazardi, Z., Pourfath, M., Moradinasab, M., Faez, R., Kosina, H. (2014).
Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 101–102), Urbana-Champaign, IL, USA. (reposiTUm)

303.   Neophytou, N., Kosina, H. (2014).
Thermoelectric Properties of Gated Silicon Nanowires.
In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

302.   Neophytou, N., Kosina, H. (2014).
Thermoelectric Properties of Gated Si Nanowires.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 197–198), Urbana-Champaign, IL, USA. (reposiTUm)

301.   Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013).
Direct Tunneling and Gate Current Fluctuations.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm)

300.   Touski, S., Pourfath, M., Kosina, H. (2013).
Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 108–109), Urbana-Champaign, IL, USA. (reposiTUm)

299.   Stanojevic, Z., Karner, M., Kosina, H. (2013).
Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724618 (reposiTUm)

298.   Neophytou, N., Stanojevic, Z., Kosina, H. (2013).
Full Band Calculations of Low-Field Mobility in P-Type Silicon Nanowire MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650579 (reposiTUm)

297.   Neophytou, N., Karamitaheri, H., Kosina, H. (2013).
Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches From Atomistic Calculations for Electrons and Phonons.
In Book of Abstracts (p. 1), Kobe, Japan. (reposiTUm)

296.   Neophytou, N., Stanojevic, Z., Kosina, H. (2013).
Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations.
In Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials (p. 142), Annecy, France. (reposiTUm)

295.   Stanojevic, Z., Kosina, H. (2013).
Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures.
In The 2013 Silicon Nanoelectronics Workshop (SNW) (pp. 93–94), Honolulu. (reposiTUm)

294.   Filipovic, L., Baumgartner, O., Kosina, H. (2013).
Modeling Direct Band-To-Band Tunneling Using QTBM.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650612 (reposiTUm)

293.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2013).
Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 86–87), Urbana-Champaign, IL, USA. (reposiTUm)

292.   Moradinasab, M., Pourfath, M., Kosina, H. (2013).
Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects.
In Book of Abstracts (p. 250), Delft, Netherlands. (reposiTUm)

291.   Stanojevic, Z., Kosina, H. (2013).
Surface-Roughness-Scattering in Non-Planar Channels — The Role of Band Anisotropy.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650647 (reposiTUm)

290.   Karamitaheri, H., Neophytou, N., Kosina, H. (2013).
Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 98–99), Urbana-Champaign, IL, USA. (reposiTUm)

289.   Karamitaheri, H., Neophytou, N., Kosina, H. (2013).
Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions.
In Book of Abstracts (p. 1), Kobe, Japan. (reposiTUm)

288.   Neophytou, N., Kosina, H. (2013).
Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures.
In Bulletin American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

287.   Stanojevic, Z., Baumgartner, O., Schnass, K., Karner, M., Kosina, H. (2013).
VSP - A Quantum Simulator for Engineering Applications.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 132–133), Urbana-Champaign, IL, USA. (reposiTUm)

286.   Nematian, H., Moradinasab, M., Noei, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 217–218), Urbana-Champaign, IL, USA. (reposiTUm)

285.   Stanojevic, Z., Baumgartner, O., Kosina, H. (2012).
A Stable Discretization Method for "Dirac-Like" Effective Hamiltonians.
In Proc. International Quantum Cascade Lasers School, Workshop (p. 127), Baden, Austria. (reposiTUm)

284.   Neophytou, N., Karamitaheri, H., Kosina, H. (2012).
Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications.
In Abstract Book (p. 46), Thessaloniki, Greece. (reposiTUm)

283.   Neophytou, N., Kosina, H. (2012).
Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects.
In Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012 (p. 488), Qingdao, China. (reposiTUm)

282.   Karamitaheri, H., Neophytou, N., Kosina, H. (2012).
Calculations of Confined Phonon Spectrum in Narrow Si Nanowires Using the Valence Force Field Method.
In Book of Abstracts (p. 1), Aalborg, Denmark. (reposiTUm)

281.   Moradinasab, M., Nematian, H., Noei, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 249–250), Urbana-Champaign, IL, USA. (reposiTUm)

280.   Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H. (2012).
Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 77–78), Urbana-Champaign, IL, USA. (reposiTUm)

279.   Neophytou, N., Karamitaheri, H., Kosina, H. (2012).
Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling.
In Book of Abstracts (p. 1), Aalborg, Denmark. (reposiTUm)

278.   Neophytou, N., Kosina, H. (2012).
Gate Field Induced Bandstructure and Mobility Variations in P-Type Silicon Nanowires.
In Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 131–132), Granadea, Spanien, Austria. (reposiTUm)

277.   Karamitaheri, H., Pourfath, M., Kosina, H. (2012).
Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor.
In Book of Abstracts (p. 1), Delft, Netherlands. (reposiTUm)

276.   Kosina, H., Neophytou, N. (2012).
Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation.
In Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012 (p. 419), Qingdao, China. (reposiTUm)

275.   Moradinasab, M., Karamitaheri, H., Pourfath, M., Kosina, H. (2012).
On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors.
In Book of Abstracts (p. 1), Delft, Netherlands. (reposiTUm)

274.   Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors.
In ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

273.   Karamitaheri, H., Pourfath, M., Neophytou, N., Kosina, H. (2012).
Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor.
In ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

272.   Neophytou, N., Kosina, H. (2012).
Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 67–68), Urbana-Champaign, IL, USA. (reposiTUm)

271.   Neophytou, N., Kosina, H. (2012).
Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures.
In Bulletin American Physical Society (APS March Meeting 2012) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

270.   Stanojevic, Z., Karner, M., Schnass, K., Kernstock, C., Baumgartner, O., Kosina, H. (2011).
A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035089 (reposiTUm)

269.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of ZGNR-Based Transistors.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

268.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices.
In 219th ECS Meeting (p. 1), Montreal, Canada. (reposiTUm)

267.   Neophytou, N., Kosina, H. (2011).
Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation.
In Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11) (p. 1), Plomarion, Greece. (reposiTUm)

266.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H. (2011).
Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons.
In 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Austria. https://doi.org/10.1109/esime.2011.5765816 (reposiTUm)

265.   Neophytou, N., Kosina, H. (2011).
Confinement-Induced Mobility Increase in P-Type [110] and [111] Silicon Nanowires.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI) (p. 2), Granadea, Spanien, Austria. (reposiTUm)

264.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2011).
Efficient Simulation of Quantum Cascade Lasers Using the Pauli Master Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035057 (reposiTUm)

263.   Karamitaheri, H., Pourfath, M., Neophytou, N., Pazoki, M., Kosina, H. (2011).
First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications.
In Proceedings of the 2nd CARBOMAT Workshop (pp. 19–22), Catania, Italy. (reposiTUm)

262.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications.
In 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Austria. https://doi.org/10.1109/esime.2011.5765811 (reposiTUm)

261.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2011).
Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 21), Reading. (reposiTUm)

260.   Kosina, H. (2011).
Semiconductor Device Modeling: The Last 30 Years.
In Abstracts of the Invited Presentations (p. 9), Vienna, Austria, Austria. (reposiTUm)

259.   Neophytou, N., Kosina, H. (2011).
Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035042 (reposiTUm)

258.   Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2011).
Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 99–100), Granadea, Spanien, Austria. (reposiTUm)

257.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Power Factor of Low Dimensional Silicon Nanowires.
In Conference Proceedings of 9th European Conference on Thermoelectrics (p. 4), Thessaloniki, Greece. (reposiTUm)

256.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Power Factor of Narrow Silicon Nanowires From Atomistic Considerations.
In Book of Abstracts (p. 1), Michigan, USA. (reposiTUm)

255.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Properties of Ultra Narrow Silicon Nanowires From Atomistic Calculations.
In APS March Meeting 2011 (p. 1), Los Angeles/USA, Austria. (reposiTUm)

254.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Transport Gap Engineering in Zigzag Graphene Nanoribbons.
In Poster Abstracts Book (TNT 2011) (p. 2), Segovia, Austria. (reposiTUm)

253.   Neophytou, N., Klimeck, G., Kosina, H. (2010).
A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5678007 (reposiTUm)

252.   Neophytou, N., Wagner, M., Kosina, H. (2010).
Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires.
In Note-Book of Abstracts (p. 30), Como, I. (reposiTUm)

251.   Neophytou, N., Kosina, H. (2010).
Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires.
In Proceedings of the Annual March Meeting of the American Physical Society (p. 401), Portland. (reposiTUm)

250.   Milovanovic, G., Baumgartner, O., Kosina, H. (2010).
Design of a MIR QCL Based on Intervalley Electron Transfer: A Monte Carlo Approach.
In Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (pp. 140–141), Shanghai. (reposiTUm)

249.   Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010).
Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band K &Amp;#x00B7; P Versus Tight Binding.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677927 (reposiTUm)

248.   Neophytou, N., Kosina, H. (2010).
Extracting Thermoelectric Properties of Nanostructures Using the Atomistic Sp3d5s*-So Tight-Binding Model.
In Nanostructured Thermoelectric Materials (p. 1), Physikzentrum Bad Honnef. (reposiTUm)

247.   Pourfath, M., Yazdanpanah, A., Fathipour, M., Kosina, H. (2010).
On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677936 (reposiTUm)

246.   Kosina, H. (2010).
Quantum Cascade Laser Modeling Based on the Pauli Master Equation.
In Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS (p. 6), Wien. (reposiTUm)

245.   Baumgartner, O., Sverdlov, V., Kosina, H., Selberherr, S. (2010).
Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films.
In Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 91–92), Granadea, Spanien, Austria. (reposiTUm)

244.   Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Miglio, L. (2010).
Strained MOSFETs on Ordered SiGe Dots.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 297–300), Montreux, Austria. (reposiTUm)

243.   Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010).
Subband Structure of Silicon Nanowires From the Hensel-Hasegawa-Nakayama Model.
In Proceedings of the 11th International Conference on Ultimate Integration o Silicon (pp. 69–72), Bologna, Austria. (reposiTUm)

242.   Pourfath, M., Yazdanpanah Goharrizi, A., Kosina, H. (2010).
The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons.
In Abstract Book (p. 419), Berlin. (reposiTUm)

241.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2010).
Thermal Properties of Graphene Antidots.
In Abstract Book of the Nanoelectronics Days 2010 (p. 102), Aachen. (reposiTUm)

240.   Neophytou, N., Kosina, H. (2010).
Thermoelectric Properties of Scaled Silicon Nanostructures Using the Sp3d5s*-So Atomistic Tight-Binding Model.
In Proceedings of the 29th International Conference on Thermoelectrics (p. 71), Shanghai. (reposiTUm)

239.   Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2010).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_52 (reposiTUm)

238.   Neophytou, N., Wagner, M., Kosina, H., Selberherr, S. (2009).
Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures Using an Atomistic Thight-Binding Model.
In Book of Abstracts (p. 91), Freiburg. (reposiTUm)

237.   Pourfath, M., Kosina, H. (2009).
Carbon Based Electronics: A Computational Study.
In Quantum Systems and Devices: Analysis, Simulations, Applications (p. 18), Beijing. (reposiTUm)

236.   Neophytou, N., Kosina, H., Selberherr, S., Klimeck, G. (2009).
Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290245 (reposiTUm)

235.   Milovanovic, G., Kosina, H. (2009).
Nonparabolicity Effects in Quantum Cascade Lasers.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091129 (reposiTUm)

234.   Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2009).
Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091131 (reposiTUm)

233.   Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2009).
Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices.
In EUROSOI 2009 Conference Proceedings (pp. 57–58), Granadea, Spanien, Austria. (reposiTUm)

232.   Pourfath, M., Baumgartner, O., Kosina, H., Selberherr, S. (2009).
Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors.
In Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 13–14), Singapore. (reposiTUm)

231.   Neophytou, N., Kosina, H., Rakshit, T. (2009).
Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091141 (reposiTUm)

230.   Milovanovic, G., Baumgartner, O., Kosina, H. (2009).
Simulation of Quantum Cascade Lasers Using Robin Boundary Conditions.
In Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 7–8), Singapore. (reposiTUm)

229.   Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D. (2009).
The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091158 (reposiTUm)

228.   Pourfath, M., Kosina, H., Selberherr, S. (2009).
Theoretical Study of Graphene Nanoribbon Photo-Detectors.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (pp. 178–179), Kaanapali. (reposiTUm)

227.   Kosina, H. (2009).
Transport Modeling for Nanowires and Nanotubes.
In Proceedings of the Final FoNE Conference (p. 35), Miraflores de la Sierra, Madrid. (reposiTUm)

226.   Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2009).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93), Sozopol, Bulgaria. (reposiTUm)

225.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2008).
A Numerical Study of Graphene Nano-Ribbon Based Resonant Tunneling Diodes.
In International Symposium on Graphene Devices: Technology, Physics, and Modeling (pp. 66–67), Japan. (reposiTUm)

224.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon.
In Micro- and Nanoelectronics 2007 (pp. 70251I-1–70251I-8), Athen, Greece. https://doi.org/10.1117/12.802503 (reposiTUm)

223.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Current Transport in Carbon Nanotube Transistors.
In The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology (pp. 361–364), Peking, Austria. (reposiTUm)

222.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond.
In Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 41–42), Granada, Austria. (reposiTUm)

221.   Baumgartner, O., Karner, M., Kosina, H. (2008).
Modeling of High-K-Metal-Gate-Stacks Using the Non-Equilibrium Green’s Function Formalism.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648310 (reposiTUm)

220.   Sverdlov, V., Ungersboeck, E., Kosina, H. (2008).
Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering.
In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_16 (reposiTUm)

219.   Pourfath, M., Kosina, H. (2008).
Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648242 (reposiTUm)

218.   Pourfath, M., Sverdlov, V., Kosina, H. (2008).
On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors.
In 1st Fone Conference Nanoelectronics 2008 (p. 41), Taormina, Italy. (reposiTUm)

217.   Pourfath, M., Baumgartner, O., Kosina, H. (2008).
On the Non-Locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors.
In 2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore. https://doi.org/10.1109/nusod.2008.4668261 (reposiTUm)

216.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 214–217), Montreux, Austria. (reposiTUm)

215.   Sverdlov, V., Windbacher, T., Kosina, H., Selberherr, S. (2008).
Stress-Induced Valley Splitting in Silicon Thin Films.
In Proceedings of the 9th International Conference on Ultimate Integration on Silicon (pp. 93–96), Bologna, Austria. (reposiTUm)

214.   Milovanovic, G., Kosina, H. (2008).
Valence Band Deformation Potentials in Semiconductors.
In Abstract Book (pp. 215–216), Princeton. (reposiTUm)

213.   Nedjalkov, M., Kosina, H., Vasileska, D. (2008).
Wigner Ensemble Monte Carlo: Challenges of 2D Nano-Device Simulation.
In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 139–147), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_14 (reposiTUm)

212.   Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., Kosina, H. (2007).
Adaptive Energy Integration of Non-Equilibrium Green's Functions.
In NSTI Nanotech Proceedings (pp. 145–148), Anaheim, Austria. (reposiTUm)

211.   Kosina, H., Triebl, O., Grasser, T. (2007).
Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 317–320), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_76 (reposiTUm)

210.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Carbon Nanotube Based Transistors: A Computational Study.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730253 (reposiTUm)

209.   Li, L., Meller, G., Kosina, H. (2007).
Charge Injection Model for Organic Light-Emitting Diodes.
In International Conference on Organic Electronics, Eindhoven. (reposiTUm)

208.   Li, L., Meller, G., Kosina, H. (2007).
Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 377–380), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_91 (reposiTUm)

207.   Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon.
In International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts, Moscow-Zvenigorod. (reposiTUm)

206.   Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Conduction Band in Silicon: Numerical Versus Analytical Two-Band K·p Model.
In 8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (p. 4), Ohrid, Macedonia. (reposiTUm)

205.   Meller, G., Li, L., Holzer, S., Kosina, H. (2007).
Dynamic Monte Carlo Simulation of an Amorphous Organic Device.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 373–376), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_90 (reposiTUm)

204.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2007).
Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389), Montreux, Austria. (reposiTUm)

203.   Sverdlov, V., Kosina, H. (2007).
Electron Subband Dispersions in Ultra-Thin Silicon Films From a Two-Band K·p Theory.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 92–93), Urbana-Champaign, IL, USA. (reposiTUm)

202.   Sverdlov, V., Ungersböck, S., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs.
In EUROSOI 2007 (pp. 39–40), Granadea, Spanien, Austria. (reposiTUm)

201.   Sverdlov, V., Karlowatz, G., Ungersboeck, E., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_79 (reposiTUm)

200.   Karner, M., Baumgartner, O., Pourfath, M., Vasicek, M., Kosina, H. (2007).
Investigation of a MOSCAP Using NEGF.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

199.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730422 (reposiTUm)

198.   Vasicek, M., Karner, M., Ungersboeck, E., Wagner, M., Kosina, H., Grasser, T. (2007).
Modeling of Macroscopic Transport Parameters in Inversion Layers.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 201–204), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_48 (reposiTUm)

197.   Sverdlov, V., Kosina, H., Grasser, T., Selberherr, S. (2007).
Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730425 (reposiTUm)

196.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
In International Symposium on Advanced Nanodevices and Nanotechnology (pp. 37–38), Waikoloa, Hawaii. (reposiTUm)

195.   Pourfath, M., Kosina, H. (2007).
The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 309–312), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_74 (reposiTUm)

194.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 239–242), Montreux, Austria. (reposiTUm)

193.   Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Two-Band k.p Model for the Conduction Band in Silicon.
In Proceedings European Simulation and Modeling Conference (pp. 220–224), Malta. (reposiTUm)

192.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2007).
Two-Band K·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

191.   Nedjalkov, M., Kosina, H., Vasileska, D. (2007).
Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation.
In Proceedings of the International Conference on Large-Scale Scientific Computing (LSSC) (pp. B-41–B-42), Sozopol, Bulgaria. (reposiTUm)

190.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346739 (reposiTUm)

189.   Karner, M., Wagner, M., Grasser, T., Kosina, H. (2006).
A Physically Based Quantum Correction Model for DG MOSFETs.
In San Francisco 2006 MRS Meeting Abstracts (pp. 104–105), San Francisco. (reposiTUm)

188.   Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S., Grasser, T., Selberherr, S. (2006).
A Tensorial High-Field Electron Mobility Model for Strained Silicon.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73), Princeton. (reposiTUm)

187.   Karlowatz, G., Ungersböck, S., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

186.   Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., Selberherr, S. (2006).
Analytical Modeling of Electron Mobility in Strained Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282833 (reposiTUm)

185.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Comparative Study of Low-Field Mobilities in Double- And Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18), Honolulu. (reposiTUm)

184.   Karner, M., Gehring, A., Holzer, S., Wagner, M., Kosina, H. (2006).
Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 161–162), Honolulu. (reposiTUm)

183.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Current Flow in Upcoming Microelectronic Devices.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 3–8), Playa del Carmen. (reposiTUm)

182.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Current Transport in Nanoelectronic Semiconductor Devices.
In Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics (pp. 490–495), Singapore. (reposiTUm)

181.  M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 345 - 346.

180.   Li, L., Meller, G., Kosina, H. (2006).
Doping Dependent Conductivity in Organic Semiconductors.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282872 (reposiTUm)

179.   Karlowatz, G., Wessner, W., Kosina, H. (2006).
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
In 5th Mathmod Vienna Proceedings (pp. 4-1–4-6), Wien, Austria. (reposiTUm)

178.   Karner, M., Gehring, A., Holzer, S., Kosina, H. (2006).
Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 572–577), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_65 (reposiTUm)

177.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282834 (reposiTUm)

176.   Meller, G., Li, L., Holzer, S., Kosina, H. (2006).
Electron Kinetics in Disordered Organic Semiconductors.
In Abstracts 2nd Annual Organic Microelectronics Workshop (p. 42), Toronto. (reposiTUm)

175.   Dhar, S., Ungersböck, S., Kosina, H., Grasser, T., Selberherr, S. (2006).
Electron Mobility Model for #Lt110> Stressed Si Including Strain-Dependent Mass.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154), Honolulu. (reposiTUm)

174.   Pourfath, M., Kosina, H. (2006).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 578–585), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_66 (reposiTUm)

173.   Nedjalkov, M., Gurov, T., Kosina, H., Vasileska, D., Palankovski, V. (2006).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 149–156), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_15 (reposiTUm)

172.   Li, L., Meller, G., Kosina, H. (2006).
Field-Dependent Effective Transport Energy in Organic Semiconductor.
In 3rd Meeting on Molecular Electronics (p. T2-PC18), Grenoble. (reposiTUm)

171.   Karlowatz, G., Ungersboeck, E., Wessner, W., Kosina, H. (2006).
Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282839 (reposiTUm)

170.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

169.   Sverdlov, V., Ungersböck, S., Kosina, H. (2006).
Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.
In NATO Advanced Research Workshop Conference Abstracts (pp. 77–78), Sudak. (reposiTUm)

168.   Sverdlov, V., Ungersböck, S., Kosina, H. (2006).
Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations.
In EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 133–134), Granadea, Spanien, Austria. (reposiTUm)

167.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In ECS Transactions (pp. 207–216), Ouro Preto. (reposiTUm)

166.   Kosina, H. (2006).
Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices.
In Program Book NANO KOREA 2006, Seoul. (reposiTUm)

165.   Kosina, H. (2006).
Nanoelectronic Device Simulation Based on the Wigner Function Formalism.
In IWTND06 Workbook (p. 26), Aizu-Wakamatsu. (reposiTUm)

164.   Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

163.   Pourfath, M., Kosina, H. (2006).
On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors.
In Proceedings Trends in Nanotechnology (p. 2), Segovia, Austria. (reposiTUm)

162.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 5), Tehran. (reposiTUm)

161.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimal Design for Carbon Nanotube Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 210–213), Montreux, Austria. (reposiTUm)

160.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimizing the Performance of Carbon Nanotube Transistors.
In 2006 Sixth IEEE Conference on Nanotechnology, Nagoya, Austria. https://doi.org/10.1109/nano.2006.247702 (reposiTUm)

159.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Orientation Dependence of the Low Field Mobility in Double- And Single-Gate SOI FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181), Montreux, Austria. (reposiTUm)

158.   Li, L., Meller, G., Kosina, H. (2006).
Percolation Current in Organic Semiconductors.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 161–162), Urbana-Champaign, IL, USA. (reposiTUm)

157.   Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2006).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 141–142), Urbana-Champaign, IL, USA. (reposiTUm)

156.  M. Wagner, T. Grasser, M. Karner, H. Kosina:
"Quantum Correction for DG MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 87 - 88.

155.   Sverdlov, V., Kosina, H., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2006).
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 594–601), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_68 (reposiTUm)

154.  V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 29 - 30.

153.   Meller, G., Li, L., Holzer, S., Kosina, H. (2006).
Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems.
In Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 1–2), Singapore. (reposiTUm)

152.   Karner, M., Ungersboeck, E., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2006).
Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282898 (reposiTUm)

151.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Strain Engineering for CMOS Devices.
In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127), Peking, Austria. (reposiTUm)

150.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2006).
The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282873 (reposiTUm)

149.   Ungersböck, S., Kosina, H., Selberherr, S. (2006).
The Influence of Stress on Inversion Layer Mobility.
In Abstracts Advanced Heterostructure Workshop (p. TH-2), Kona. (reposiTUm)

148.  M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling-CNTFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 291 - 292.

147.  M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 255 - 256.

146.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2006).
VSP-A Gate Stack Analyzer.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102), Catania. (reposiTUm)

145.   Kosina, H., Sverdlov, V., Grasser, T. (2006).
Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282908 (reposiTUm)

144.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 95–96), Pisa, Austria. (reposiTUm)

143.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S., Selberherr, S. (2005).
A Physically-Based Electron Mobility Model for Strained Si Devices.
In NSTI Nanotech Technical Proceedings (pp. 13–16), Anaheim, Austria. (reposiTUm)

142.   Li, L., Kosina, H. (2005).
An Analytical Model for Organic Thin Film Transistors.
In Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 571–574), Hong Kong, Austria. (reposiTUm)

141.   Karner, M., Gehring, A., Kosina, H. (2005).
Efficient Calculation of Life Time Based Direct Tunneling Through Stacked Dielectrics.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 97–98), Pisa, Austria. (reposiTUm)

140.   Karner, M., Gehring, A., Kosina, H., Selberherr, S. (2005).
Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201466 (reposiTUm)

139.   Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2005).
Efficient Calculation of Quasi-Bound State Tunneling Through Stacked Dielectrics.
In 208th ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

138.   Pourfath, M., Park, W., Kosina, H., Selberherr, S. (2005).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 50–51), Sozopol, Bulgaria. (reposiTUm)

137.   Nedjalkov, M., Gurov, T., Kosina, H., Vasileska, D., Palankovski, V. (2005).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (p. 46), Sozopol, Bulgaria. (reposiTUm)

136.   Pourfath, M., Kosina, H., Cheong, B., Park, W. (2005).
Geometry-Dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201480 (reposiTUm)

135.   Pourfath, M., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
High Performance Carbon Nanotube Field Effect Transistor With the Potential for Tera Level Integration.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference (pp. 95–98), Bologna, Austria. (reposiTUm)

134.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices.
In NSTI Nanotech Technical Proceedings (pp. 45–48), Anaheim, Austria. (reposiTUm)

133.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 541–544), Montreux, Austria. (reposiTUm)

132.   Meller, G., Li, L., Kosina, H. (2005).
Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors.
In Second Meeting on Molecular Electronics (p. 107), Grenoble. (reposiTUm)

131.   Sverdlov, V., Kosina, H., Selberherr, S. (2005).
Modeling Current Transport in Ultra-Scaled Field Effect Transistors.
In Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 385–390), Hong Kong, Austria. (reposiTUm)

130.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Modeling of Tunneling Currents for Highly Degraded CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201512 (reposiTUm)

129.   Dhar, S., Karlowatz, G., Ungersböck, S., Kosina, H., Selberherr, S. (2005).
Modeling of Velocity-Field Characteristics in Strained Silicon.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 1060–1063), New Dehli. (reposiTUm)

128.   Meller, G., Li, L., Kosina, H. (2005).
Monte Carlo Simulation of Molecularly Doped Organic Semiconductors.
In 3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts (pp. 44–45), Winterthur, Austria. (reposiTUm)

127.   Ungersböck, S., Kosina, H. (2005).
Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 10–11), Pisa, Austria. (reposiTUm)

126.   Dhar, S., Karlowatz, G., Ungersboeck, E., Kosina, H. (2005).
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201513 (reposiTUm)

125.   Karner, M., Gehring, A., Holzer, S., Kosina, H. (2005).
On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling.
In Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC) (pp. 33–34), Sozopol, Bulgaria. (reposiTUm)

124.   Kosina, H., Sverdlov, V., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2005).
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 36–37), Sozopol, Bulgaria. (reposiTUm)

123.   Gehring, A., Sverdlov, V., Kosina, H., Selberherr, S. (2005).
Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach.
In EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 71–72), Granada, Austria. (reposiTUm)

122.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
Rigorous Modeling of Carbon Nanotube Field Effect Transistors.
In Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices (pp. 155–156), Maui. (reposiTUm)

121.   Li, L., Meller, G., Kosina, H. (2005).
Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors.
In 3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts (pp. 112–113), Winterthur, Austria. (reposiTUm)

120.   Ungersboeck, E., Kosina, H. (2005).
The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201535 (reposiTUm)

119.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors.
In 5th IEEE Conference on Nanotechnology, 2005., Nagoya, Austria. https://doi.org/10.1109/nano.2005.1500641 (reposiTUm)

118.   Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005).
Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Montreux, Austria. (reposiTUm)

117.   Pourfath, M., Gehring, A., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration.
In NSTI Nanotech Technical Proceedings (pp. 128–131), Anaheim, Austria. (reposiTUm)

116.  T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 36 - 37. https://doi.org/10.1109/IWCE.2004.1407308

115.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

114.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 295 - 298. https://doi.org/10.1007/978-3-7091-0624-2_69

113.  H. Kosina:
"Advanced Transport Models for Nanodevices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), 35.

112.  T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 1 - 8. https://doi.org/10.1007/978-3-7091-0624-2_1

111.  H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba (invited); 2004-12-17 - 2004-12-22; in: "Extended Abstracts of WOFE 2004", (2004), 6.

110.  V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

109.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; 429 - 432.

108.  H. Kosina, V. Palankovski:
"Mobility Enhancement in Strained CMOS Devices";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu (invited); 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 101 - 105.

107.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; 793 - 796. https://doi.org/10.13140/2.1.1839.7126

106.  M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 237 - 238. https://doi.org/10.1109/IWCE.2004.1407414

105.  T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 109 - 112. https://doi.org/10.1007/978-3-7091-0624-2_26

104.  E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120.

103.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

102.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
"Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 149 - 152. https://doi.org/10.1007/978-3-7091-0624-2_35

101.  A. Gehring, H. Kosina:
"Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 227 - 228. https://doi.org/10.1109/IWCE.2004.1407409

100.   Kosina, H., Nedjalkov, M., Selberherr, S. (2003).
A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 35–36), Urbana-Champaign, IL, USA. (reposiTUm)

99.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Quasi-Particle Model of the Electron - Wigner Potential Interaction";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 2003-07-28 - 2003-08-01; in: "Proceedings HCIS-13", (2003), Th 5-1.

98.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2003-06-04 - 2003-06-08; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 24.

97.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 35 - 36.

96.  S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 40 - 41.

95.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; 48 - 51.

94.  E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Analysis of Carrier Transport in Carbon Nanotube FET Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 1059 - 1061.

93.   Gehring, A., Kosina, H., Selberherr, S. (2003).
Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 105–106), Urbana-Champaign, IL, USA. (reposiTUm)

92.  H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
"Comparison of Numerical Quantum Device Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 171 - 174. https://doi.org/10.1109/SISPAD.2003.1233664

91.  A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; 131 - 134.

90.  T.V. Gurov, M. Nedjalkov, H. Kosina:
"Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in: "Book of Abstracts MCM-2003", (2003), 10.

89.  M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

88.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; 190 - 193.

87.  T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 63 - 66. https://doi.org/10.1109/SISPAD.2003.1233638

86.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

85.  T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; 105 - 108.

84.  E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 411 - 414.

83.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Solution of the Space-Dependent Wigner Equation Using a Particle Model";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

82.  F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr:
"Static and Transient Simulation of Inelastic Trap-Assisted Tunneling";
Talk: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 2003-10-16 - 2003-10-17; in: "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1; 65 - 68.

81.  S. Smirnov, H. Kosina, S. Selberherr:
"Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 55 - 58. https://doi.org/10.1109/SISPAD.2003.1233636

80.  H. Kosina:
"VMC: a Code for Monte Carlo Simulation of Quantum Transport";
Talk: MEL-ARI/NID Workshop, Cork; 2003-06-23 - 2003-06-25; in: "Proc. 12th MEL-ARI/NID Workshop", (2003).

79.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 235 - 238. https://doi.org/10.1109/SISPAD.2002.1034560

78.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Particle Model for Wigner Transport through Tunneling Structures";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 136 - 139.

77.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"An Impact Ionization Model Including an Explicit Cold Carrier Population";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 572 - 575.

76.  S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 29 - 32. https://doi.org/10.1109/SISPAD.2002.1034509

75.  A. Gehring, F. Jimenez-Molinos, A. Palma, H. Kosina, S. Selberherr:
"Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), München; 2002-03-07 - 2002-03-08; in: "3rd European Workshop on Ultimate Integration of Silicon", (2002), 15 - 18.

74.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 195 - 198. https://doi.org/10.1109/SISPAD.2002.1034550

73.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Talk: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 2002-12-08 - 2002-12-13; in: "Fourth International Conference on Low Dimensional Structures and Devices", (2002), 5.

72.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
"The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 544 - 547.

71.  A. Gehring, H. Kosina, S. Selberherr:
"Transmission Coefficient Estimation for High-k Gate Stack Evaluation";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 156 - 159.

70.  M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
"Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 187 - 190. https://doi.org/10.1109/SISPAD.2002.1034548

69.  H. Kosina, R. Kosik, M. Nedjalkov:
"A Hierarchy of Kinetic Equations for Quantum Device Simulation";
Talk: Conference on Applied Mathematics in our Changing World, Berlin (invited); 2001-09-02 - 2001-09-06; in: "Proceedings First SIAM-EMS Conference on Applied Mathematics in our Changing World", (2001), 24.

68.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; 474 - 477.

67.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"A Simulation Study of Partially Depleted SOI MOSFETs";
Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in: "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1; 181 - 186.

66.   Nedjalkov, M., Kosina, H., Kosik, R., Selberherr, S. (2001).
A Space Dependent Wigner Equation Including Phonon Interaction.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 4), Urbana-Champaign, IL, USA. (reposiTUm)

65.  M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
"A Wigner Equation for the Nanometer and Femtosecond Transport Regime";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; 277 - 281. https://doi.org/10.1109/NANO.2001.966433

64.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
"Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; 215 - 218.

63.  H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 2001-09-10 - 2001-09-14; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 141 - 143.

62.  T. Grasser, H. Kosina, S. Selberherr:
"An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 46 - 49. https://doi.org/10.1007/978-3-7091-6244-6_10

61.   Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., Selberherr, S. (2001).
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 67), Urbana-Champaign, IL, USA. (reposiTUm)

60.  M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Boundary Condition Models for Terminal Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 152 - 155. https://doi.org/10.1007/978-3-7091-6244-6_34

59.  T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 2001-08-27 - 2001-08-31; in: "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), 27.

58.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko (invited); 2001-02-12 - 2001-02-17; in: "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8; 19 - 30.

57.  T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 54 - 57. https://doi.org/10.1007/978-3-7091-6244-6_12

56.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 2001-09-10 - 2001-09-14; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 58 - 59.

55.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2001-06-06 - 2001-06-10; in: "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), A-23.

54.  J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"Numerical Study of Partial-SOI LDMOSFET Power Devices";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in: "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117.

53.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
Talk: International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (ed.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; 664 - 667.

52.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; 11 - 14.

51.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 140 - 143. https://doi.org/10.1007/978-3-7091-6244-6_31

50.  M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 2000-05-22 - 2000-05-25; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6; 144 - 145. https://doi.org/10.1109/IWCE.2000.869966

49.  C. Troger, H. Kosina, S. Selberherr:
"A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 2000-01-20 - 2000-01-21; in: "European Workshop on Ultimate Integration of Silicon", (2000), 123 - 126.

48.  M. Gritsch, H. Kosina, C. Fischer, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 2000-10-25 - 2000-10-27; in: "Proceedings EUROSOI 2000", (2000), 1 - 4.

47.  V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr:
"A New Analytical Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 395 - 398.

46.  V. Palankovski, R. Strasser, H. Kosina, S. Selberherr:
"A Systematic Approach for Model Extraction for Device Simulation Application";
Talk: International Conference on Applied Modelling and Simulation, Cairns; 1999-09-01 - 1999-09-03; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; 463 - 466.

45.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Analytical Model for the Electron Energy Relaxation Time";
Talk: Conference De Dispositivos Electronicos, Madrid; 1999-06-10 - 1999-06-11; in: "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5; 263 - 266.

44.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modelling and Simulation, Philadelphia; 1999-05-05 - 1999-05-08; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8; 367 - 370.

43.  T. Grasser, H. Kosina, S. Selberherr:
"Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 151 - 154. https://doi.org/10.1109/SISPAD.1999.799283

42.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 155 - 158. https://doi.org/10.1109/SISPAD.1999.799284

41.  H. Kosina:
"The Monte Carlo Method for Semi-classical Charge Transport in Semiconductor Devices";
Talk: Seminar on Monte Carlo Methods (MCM), Varna; 1999-06-07 - 1999-06-11; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), 26 - 27.

40.  M. Nedjalkov, H. Kosina:
"Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
Talk: Seminar on Monte Carlo Methods (MCM), Varna; 1999-06-07 - 1999-06-11; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), 43.

39.  V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 105 - 108. https://doi.org/10.1007/978-3-7091-6827-1_29

38.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation";
Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 1998-05-06 - 1998-05-08; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; M2.4.1.

37.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity";
Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez (invited); 1998-05-31 - 1998-06-05; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), P-Th-17.

36.  C. Troger, H. Kosina, S. Selberherr:
"A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 26 - 27.

35.  H. Kosina, G. Kaiblinger-Grujin, S. Selberherr:
"A New Approach to Ionized-Impurity Scattering";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 205 - 208. https://doi.org/10.1109/SISPAD.1997.621373

34.  C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys";
Poster: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), TP21.

33.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors";
Talk: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), TA02.

32.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Electron Mobility in Doped Semiconductors";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 30 - 31.

31.  G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Talk: International Conference on Defects in Semiconductors, Aveiro; 1997-07-21 - 1997-07-25; in: "Proceedings Intl. Conf. on Defects in Semiconductors", Proceedings Part 2, Section 11 (1997), 939 - 944.

30.  C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in InP";
Talk: International Conference on Indium Phosphide an Related Materials, Hyannis; 1997-05-11 - 1997-05-15; in: "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), 280 - 283.

29.  C. Troger, H. Kosina, S. Selberherr:
"Modeling Nonparabolicity Effects in Silicon Inversion Layers";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 323 - 326. https://doi.org/10.1109/SISPAD.1997.621403

28.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Monte Carlo Simulation of Electron Transport in Doped Silicon";
Talk: High Performance Computing Asia Conference, Seoul; 1997-04-28 - 1997-05-02; in: "Proceedings High Performance Computing Asia 1997 Conf.", (1997), 444 - 449.

27.  C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Reexamination of Electron Mobility Dependence on Dopants in GaAs";
Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 304 - 307.

26.  H. Kosina, C. Troger:
"SPIN - A Schrödinger Poisson Solver Including Nonparabolic Bands";
Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 1997-05-28 - 1997-05-30; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), P51.

25.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 1997-05-28 - 1997-05-30; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), FrP1.

24.  H. Kosina, S. Selberherr:
"Technology CAD: Process and Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 1997-09-14 - 1997-09-17; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1997), ISBN: 0-7803-3664-x; 441 - 450. https://doi.org/10.1109/ICMEL.1997.632866

23.  C. Wasshuber, H. Kosina:
"A Multipurpose Single Electron Device and Circuit Simulator";
Talk: Silicon Nanoelectronics Workshop, Honolulu; 1996-06-09 - 1996-06-10; in: "Abstracts Silicon Nanoelectronics Workshop", (1996), 37.

22.  C. Wasshuber, H. Kosina:
"A Single Electron Device and Circuit Simulator";
Talk: Nanostructures and Mesoscopic Systems, Santa Fe; 1996-05-19 - 1996-05-24; in: "Proceedings Nanostructures and Mesoscopic Systems", (1996), 43.

21.  C. Wasshuber, H. Kosina:
"A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 135 - 136. https://doi.org/10.1109/SISPAD.1996.865311

20.  C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System";
Talk: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 1996-09-23 - 1996-09-27; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1996), 675 - 678.

19.   Harrer, M., Kosina, H. (1995).
A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 24), Urbana-Champaign, IL, USA. (reposiTUm)

18.   Kosina, H., Harrer, M., Vogl, P., Selberherr, S. (1995).
A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands.
In Simulation of Semiconductor Devices and Processes (pp. 396–399), Bologna, Austria. https://doi.org/10.1007/978-3-7091-6619-2_96 (reposiTUm)

17.   Kaiblinger-Grujin, G., Kosina, H. (1995).
An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 25), Urbana-Champaign, IL, USA. (reposiTUm)

16.   Simlinger, T., Kosina, H., Rottinger, M., Selberherr, S. (1995).
MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 83–86), Montreux, Austria. (reposiTUm)

15.   Köpf, C., Kosina, H., Selberherr, S. (1995).
Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation.
In Abstracts Intl.Symposium on Compound Semiconductors (p. 108), Cheju Island, Austria. (reposiTUm)

14.  H. Kosina, T. Simlinger:
"Modeling Concepts for Modern Semiconductor Devices";
Talk: International Semiconductor Conference (CAS), Sinaia (invited); 1995-10-11 - 1995-10-14; in: "Proceedings CAS 95 Intl. Semiconductor Conference", (1995), ISBN: 0-7803-2647-4; 27 - 36.

13.   Wasshuber, C., Kosina, H. (1995).
Simulation of a Single Electron Tunnel Transistor With Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 4), Urbana-Champaign, IL, USA. (reposiTUm)

12.   Simlinger, T., Deutschmann, R., Fischer, C., Kosina, H., Selberherr, S. (1995).
Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination With Full Newton Method.
In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 589–591), Peking, Austria. (reposiTUm)

11.   Hackel, M., Kosina, H., Selberherr, S. (1993).
Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields.
In Simulation of Semiconductor Devices and Processes (pp. 65–68), Bologna, Austria. https://doi.org/10.1007/978-3-7091-6657-4_15 (reposiTUm)

10.  M. Hackel, H. Kosina, S. Selberherr:
"Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures";
Talk: International Workshop on Computational Electronics (IWCE), Leeds, UK; 1993-08-11 - 1993-08-13; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), 186 - 190.

9.   Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Pichler, C., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S. (1993).
The Viennese Integrated System for Technology CAD Applications.
In Technology CAD Systems (pp. 197–236), Wien, Austria. https://doi.org/10.1007/978-3-7091-9315-0_10 (reposiTUm)

8.   Kosina, H., Selberherr, S. (1992).
A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration.
In Proceedings NUPAD IV (pp. 117–122), Honolulu, Austria. (reposiTUm)

7.  H. Kosina, S. Selberherr:
"Improved Algorithms in Monte Carlo Device Simulation";
Talk: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA (invited); 1992-05-28 - 1992-05-29; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1992), 43 - 48.

6.  P. Grubmair, P. Habas, O. Heinreichsberger, H. Kosina, C. Sala, S. Selberherr:
"Recent Advances in Device Simulation at the TU-Vienna";
Talk: International Semiconductor Conference (CAS), Sinaia (invited); 1992-10-06 - 1992-10-11; in: "Proceedings CAS 92 Conference", (1992), 347 - 358.

5.   Kosina, H., Selberherr, S. (1991).
Analysis of Filter Techniques for Monte-Carlo Device Simulation.
In Proceedings SISDEP 91 (pp. 251–256), Bologna, Austria. (reposiTUm)

4.   Kosina, H., Lindorfer, P., Selberherr, S. (1991).
Monte-Carlo — Poisson Coupling Using Transport Coefficients.
In Microelectronic Engineering (pp. 53–56), Montreux, Austria. https://doi.org/10.1016/0167-9317(91)90182-d (reposiTUm)

3.  H. Kosina, S. Selberherr:
"Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Sendai; 1990-08-22 - 1990-08-24; in: "Proceedings Solid State Devices and Materials Conference", (1990), ISBN: 4-930813-41-7; 139 - 142.

2.   Selberherr, S., Kosina, H. (1990).
Simulation of Nanometer MOS-Devices With MINIMOS.
In Proceedings 1990 VLSI Process/Device Modeling Workshop (pp. 2–5), Osaka, Austria. (reposiTUm)

1.  H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
"Simulation of ULSI Processes and Devices";
Talk: Computer Aided Innovation of New Materials, Tokyo, Japan (invited); 1990-08-28 - 1990-08-31; in: "Proceedings Computer Aided Innovation of New Materials 90", (1990), ISBN: 0-444-88864-0; 723 - 728.

Talks and Poster Presentations (without Proceedings-Entry)

34.   Kosina, H. (2022, October 13).
Numerische Modellierung Der Beweglichkeit in Verspanntem Silizium
 CiS MEMS Workshop, Erfurt, Germany. (reposiTUm)

33.   Kosina, H. (2022).
Recent Developments in Semiclassical Transport: Backward Monte Carlo and Electron-Electron Scattering.
Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm)

32.   Neophytou, N., Foster, S., Thesberg, M., Kosina, H. (2017).
Electronic Transport Simulations in Nanocomposites - Exploring the Features That Optimize the Thermoelectric Power Factor.
E-MRS Spring Meeting, Strasbourg, France, EU. (reposiTUm)

31.   Foster, S., Chakraborty, D., Thesberg, M., Kosina, H., Neophytou, N. (2017).
Monte Carlo Simulations for Extracting the Power Factor in 1D Systems.
EPRSC Thermoelectric Network Meeting, Manchester, UK, EU. (reposiTUm)

30.   Thesberg, M., Neophytou, N., Pourfath, M., Kosina, H. (2016).
Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials.
Energy-Materials-Nanotechnology Meeting on Thermoelectric Materials (EMN), Orlando, USA, Non-EU. (reposiTUm)

29.   Kosina, H. (2016).
Semiconductor Device Modeling at the Nanoscale.
42nd International Conference on Nano Engineering, MNE 2016, Wien, Austria. (reposiTUm)

28.   Kosina, H. (2015).
Blessing or Curse: Dissipative Quantum Transport in Nano-Scale Devices.
Workshop “From Atom to Transistor” at the 45th European Solid-State Device Research Conference (ESSDERC), Graz, Austria. (reposiTUm)

27.   Harrer, A., Reininger, P., Gansch, R., Schwarz, B., MacFarland, D., Zederbauer, T., Detz, H., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2015).
Quantum Cascade Detectors for Sensing Applications.
ICAVS8, Wien, Austria. (reposiTUm)

26.   Harrer, A., Reininger, P., Schwarz, B., Gansch, R., Kalchmair, S., Detz, H., Zederbauer, T., MacFarland, D., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2014).
Advances in Quantum Cascade Detector Design.
4th International Nanophotonics Meeting 2014, Igls, Austria. (reposiTUm)

25.   Strasser, G., Schwarz, B., Reininger, P., Baumgartner, O., Schrenk, W., Zederbauer, T., Detz, H., Andrews, A. M., Kosina, H. (2013).
Bi-Functional Quantum Cascade Laser/Detectors for Integrated Photonics.
ÖPG-Jahrestagung, Innsbruck, Austria, Austria. (reposiTUm)

24.   Harrer, A., Schwarz, B., Reininger, P., Gansch, R., Zederbauer, T., Andrews, A. M., Kalchmair, S., Schrenk, W., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2013).
Intersubband Detectors.
3rd International Nanophotonics Meeting 2013, Salzburg, Austria. (reposiTUm)

23.   Schwarz, B., Reininger, P., Schrenk, W., Detz, H., Baumgartner, O., Zederbauer, T., Andrews, A. M., Kosina, H., Strasser, G. (2013).
Monolithically Integrated Quantum Cascade Laser and Detector.
CLEO Europe 2013, Munich, EU. (reposiTUm)

22.   Schwarz, B., Reininger, P., Ristanic, D., Baumgartner, O., Detz, H., Zederbauer, T., MacFarland, D., Andrews, A. M., Schrenk, W., Kosina, H., Strasser, G. (2013).
On-Chip Mid-Infrared Light Generation and Detection.
ITQW, Badesi, Italy, EU. (reposiTUm)

21.   Moradinasab, M., Pourfath, M., Baumgartner, O., Kosina, H. (2013).
Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers.
The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA, Non-EU. (reposiTUm)

20.   Schwarz, B., Reininger, P., Detz, H., Zederbauer, T., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2013).
Same-Frequency Detector and Laser Utilizing Bi-Functional Quantum Cascade Active Regions.
SPIE Photonics West, San Jose Convention Center, San Jose, California, USA, Non-EU. (reposiTUm)

19.   Schwarz, B., Reininger, P., Baumgartner, O., Zederbauer, T., Detz, H., Andrews, A. M., Schrenk, W., Kosina, H., Strasser, G. (2013).
Towards Mid-Infrared On-Chip Sensing Utilizing a Bi-Functional Quantum Cascade Laser/Detector.
Conference on Electronic Properties of Two-Dimensional Systems / Modulated Semiconductor Structures (EP2Ds-MSS), Wroclaw, Polen, EU. (reposiTUm)

18.   Reininger, P., Schwarz, B., Wirthmüller, A., Harrer, A., Baumgartner, O., Detz, H., Zederbauer, T., MacFarland, D., Andrews, A. M., Schrenk, W., Hvozdara, L., Kosina, H., Strasser, G. (2013).
Towards Higher Temperature Operation of Quantum Cascade Detectors.
ITQW, Badesi, Italy, EU. (reposiTUm)

17.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
A Mid-Infrared Dual Wavelenght Quantum Cascade Structure Designed for Both Emission and Detection.
International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. (reposiTUm)

16.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Dual Wavelength Quantum Cascade Structure That Can Act Both as Laser and Detector.
MIRTHE-IROn-SensorCAT virtual conference 2012, Princeton, Non-EU. (reposiTUm)

15.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Dual-Color Quantum Cascade Structure for Coherent Emission and Detection.
International Quantum Cascade Lasers School, Workshop 2012 (IQCLSW 2012), Baden, Austria. (reposiTUm)

14.   Stanojevic, Z., Kosina, H. (2012).
Efficient Numerical Analysis of Dielectric Cavities.
European Semiconductor Laser Workshop (ESLW), Brussels, Belgium, EU. (reposiTUm)

13.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Optimization of Intersubband Devices for Dual-Color Emission, Absorption and Detection.
ÖPG-Jahrestagung, Innsbruck, Austria, Austria. (reposiTUm)

12.   Reininger, P., Schwarz, B., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser.
International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. (reposiTUm)

11.   Reininger, P., Schwarz, B., Kalchmair, S., Gansch, R., Baumgartner, O., Stanojevic, Z., Kosina, H., Schrenk, W., Strasser, G. (2012).
Simulation of a Dual Wavelength Quantum Cascade Laser in a Photonic Crystal Cavity.
International Quantum Cascade Lasers School, Workshop 2012 (IQCLSW 2012), Baden, Austria. (reposiTUm)

10.   Milovanovic, G., Baumgartner, O., Nobile, M., Detz, H., Andrews, A. M., Strasser, G., Kosina, H. (2011).
Monte Carlo Simulation of an Al-Free Quantum Cascade Laser.
MIRTHE-IROn-SensorCAT virtual conference, Princenton, Non-EU. (reposiTUm)

9.   Lugstein, A., Steinmair, M., Steiger-Thirsfeld, A., Kosina, H., Bertagnolli, E. (2010).
Tuning the Electronic Properties of Ultra-Strained Silicon Nanowires.
MRS Fall Meeting, Boston, USA, Austria. (reposiTUm)

8.   Kosina, H., Sverdlov, V. (2007).
Impact of Strain and Defects on CMOS Process and Device Performance.
15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece, EU. (reposiTUm)

7.   Li, L., Meller, G., Kosina, H. (2007).
Micro and Macroscopic Modeling of Charge Flows in Molecularly Disordered Organic Semiconductors.
SISPAD 2007 Companion Workshop “Organic Electronics,” Wien, Austria. (reposiTUm)

6.   Kosina, H. (2006).
Numerical Simulation of Quantum Devices Utilizing the Wigner Function Formalism.
Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. (reposiTUm)

5.   Sverdlov, V., Kosina, H., Ringhofer, Ch., Nedjalkov, M., Selberherr, S. (2004).
Beyond the Golden Rule in Electron-Phonon Scattering: An Advanced Monte Carlo Algorithm.
DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching, Austria. (reposiTUm)

4.   Kosina, H. (2004).
The Wigner Equation for Nanoscale Device Simulation.
DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching, Austria. (reposiTUm)

3.   Gehring, A., Jimenez-Molinos, F., Kosina, H., Palma, A., Gamiz, F., Selberherr, S. (2003).
Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

2.   Kosina, H., Nedjalkov, M. (2003).
The Wigner Equation for Quantum Device Modeling.
Workshop on Quantum and Many-Body Effects in Nanoscale Devices, Arizona State University, Austria. (reposiTUm)

1.   Kaiblinger-Grujin, G., Köpf, C., Kosina, H., Selberherr, S. (1997).
Dependence of Electron Mobility on Impurities in Compound Semiconductors.
III-V Semiconductor Device Simulation Workshop, Turin, Austria. (reposiTUm)

Habilitation Theses

1.  H. Kosina:
"Current Transport in Electronic Devices";
TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 1997.

Doctor's Theses (authored and supervised)

17.   Baumgartner, O. (2020).
Numerical Modeling of Multilayer Semiconductor Devices
 Technische Universität Wien. (reposiTUm)

16.   Kampl, M. (2019).
Investigating Hot-Carrier Effects Using the Backward Monte Carlo Method
 Technische Universität Wien. https://doi.org/10.34726/hss.2019.65003 (reposiTUm)

15.   Stanojevic, Z. (2016).
Physical Mobility Modeling for TCAD Device Simulation
 Technische Universität Wien. https://doi.org/10.34726/hss.2016.37966 (reposiTUm)

14.  M. Moradinasab:
"Optical Properties of Semiconductor Nanostructures";
Supervisor, Reviewer: H. Kosina, T. Fromherz; Institut für Mikroelektronik, 2015; oral examination: 2015-04-24. https://doi.org/10.34726/hss.2015.29704

13.   Karamitaheri, H. (2013).
Thermal and Thermoelectric Properties of Nanostructures
 Technische Universität Wien. https://doi.org/10.34726/hss.2013.29976 (reposiTUm)

12.  G. Milovanovic:
"Numerical Modeling of Quantum Cascade Lasers";
Supervisor, Reviewer: H. Kosina, D. Süss; Institut für Mikroelektronik, 2011; oral examination: 2011-03-30. https://doi.org/10.34726/hss.2011.22142

11.  G. Karlowatz:
"Advanced Monte Carlo Simulation for Semiconductor Devices";
Supervisor, Reviewer: H. Kosina, E. Benes; Institut für Mikroelektronik, 2009; oral examination: 2009-06-24. https://doi.org/10.34726/hss.2009.16312

10.  L. Li:
"Charge Transport in Organic Semiconductor Materials and Devices";
Supervisor, Reviewer: H. Kosina, D. Süss; Institut für Mikroelektronik, 2008; oral examination: 2008-02-08. https://doi.org/10.34726/hss.2007.06698444

9.  E. Ungersböck:
"Advanced Modeling of Strained CMOS Technology";
Supervisor, Reviewer: H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007; oral examination: 2007-04-23. https://doi.org/10.34726/hss.2007.8326

8.  S. Dhar:
"Analytical Mobility Models for Strained Silicon-Based Devices";
Supervisor, Reviewer: H. Kosina, G. Magerl; Institut für Mikroelektronik, 2007; oral examination: 2007-08-30. https://doi.org/10.34726/hss.2007.9404

7.   Kim, H.-B. (2007).
Design, Simulation and Fabrication of Micro/Nano Functional Structures Using Ion Beams
 Technische Universität Wien. (reposiTUm)

6.  M. Pourfath:
"Numeric Study of Quantum Transport in Carbon Nanotube-Based Transistors";
Supervisor, Reviewer: H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007; oral examination: 2007-07-03.

5.   Pourfath, M. (2007).
Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors
 Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-14427 (reposiTUm)

4.  S. Smirnov:
"Physical Modeling of Electron Transport in Strained Silicon and Silicon-Germanium";
Supervisor, Reviewer: H. Kosina, K. Unterrainer; Institut für Mikroelektronik, 2003; oral examination: 2003-12-17.

3.  M. Gritsch:
"Numerical Modeling of Silicon-on-Insulator MOSFETs";
Supervisor, Reviewer: H. Kosina, E. Gornik; Institut für Mikroelektronik, 2002; oral examination: 2002-12-20. https://doi.org/10.34726/hss.2002.03697025

2.   Troger, C. (2001).
Modellierung Von Quantisierungseffekten in Feldeffekttransistoren
 Technische Universität Wien. (reposiTUm)

1.   Kosina, H. (1992).
Simulation Des Ladungstransportes in Elektronischen Bauelementen Mit Hilfe Der Monte-Carlo-Methode
 Technische Universität Wien. https://doi.org/10.34726/hss.1992.00474269 (reposiTUm)

Diploma and Master Theses (authored and supervised)

32.   Gull, J. (2022).
Implementation of a Two-Particle Monte Carlo Method for the Treatment of Electron-Electron-Scattering in Semiconductors
 Technische Universität Wien. https://doi.org/10.34726/hss.2022.33525 (reposiTUm)

31.   Kandolf, C. (2019).
Numerical Solution of the Liouville-Von Neumann Equation Using Transformed Coordinates
 Technische Universität Wien. (reposiTUm)

30.  C. Kandolf:
"Numerische Lösung der Liouville-Von Neumann Gleichung in transformierten Koordinaten";
Supervisor: H. Kosina; Institut für Mikroelektronik, 2019; final examination: 2019-04-12.

29.   Schnass, K. (2016).
Simulation of Ballistic Two-Dimensional Quantum Transport
 Technische Universität Wien. (reposiTUm)

28.   Kampl, M. (2015).
Implementation of a Backward Monte Carlo Algorithm to Investigate Hot Carriers in Semiconductor Devices
 Technische Universität Wien. (reposiTUm)

27.   Sonderfeld, R. (2014).
Numerical Calculation of Semiconductor Band Structures
 Technische Universität Wien. (reposiTUm)

26.  S. Wolf:
"Monte-Carlo Raytracing for Thermal Transport Simulation";
Supervisor: H. Kosina; Institut für Mikroelektronik, 2013; final examination: 2013-06-13.

25.  C. Kernstock:
"Design and Implementation of TCAD Environment Tools";
Supervisor: H. Kosina, M. Karner; Institut für Mikroelektronik, 2008; final examination: 2008-11-28.

24.   Höflechner, B. (2006).
A Random Number Generator Library for Monte Carlo Simulation
 Technische Universität Wien. (reposiTUm)

23.   Wagner, M. (2004).
A Base Library for Full Band Monte Carlo Simulations
 Technische Universität Wien. (reposiTUm)

22.   Ungersböck, S.-E. (2002).
Numerische Berechnung Der Bandstruktur Von Halbleitern
 Technische Universität Wien. (reposiTUm)

21.  M. Gritsch:
"Implementation of a Non-Parabolic Energy-Transport Model";
Supervisor: H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999.

20.  M. El Ghazi:
"Erstellung eines Programmes zur Dreidimensionalen Visualisierung von Simulationsdaten aus dem TCAD-Framework VISTA";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997.

19.  M. Standfest:
"Numerische Berechnung der Zustandsdichte von Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997.

18.  G. Zankl:
"Über die Erzeugung von Gitterstützpunkten in Dreidimensionalen Geometrien";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997.

17.  G. Koder:
"Analyse eines Hall Sensor-IC";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996.

16.  R. Baldemair:
"Numerische Verfahren zur Darstellung von Energiebändern in Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996.

15.  S. Karlich:
"Simulation von Extrinsischer Diffusion in Silizium";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996.

14.  T. Grasser:
"Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

13.  M. Müllauer:
"Modellierung von Paarstreuungen und Simulation ihrer Auswirkungen auf einen 1µm-BiCMOS-Prozeß";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

12.  L. Wang:
"Monte-Carlo Simulation des Elektronentransports in Technologisch Signifikanten Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

11.  M. Harrer:
"Monte-Carlo Simulation des Stationären Löchertransportes in Kovalenten Halbleitern mittels Reihenentwicklung des Valenzbandes";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

10.  C. Troger:
"Numerische Modellierung des Elektronentransports in Halbleiter-Heteroübergängen";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

9.  R. Sabelka:
"Entwicklung einer X-Windows-Schnittstelle für das Programm OPERA";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1994.

8.  B. Czermak:
"Monte-Carlo Simulation des stationären Elektronentransportes in polaren Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1993.

7.  A. Lugbauer:
"Numerische Simulation von Band-zu-Band Tunneleffekten";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1991.

6.  G. Mayer:
"Anwendung des PIF (Profile Interchange Format) in der Prozeß- und Device-Simulation";
Supervisor: S. Selberherr, O. Heinreichsberger, H. Kosina; Institut für Mikroelektronik, 1990.

5.  R. Bauer:
"Numerische Bereichstransformation für die zweidimensionale Prozeß -Simulation";
Supervisor: S. Selberherr, K. Wimmer, H. Kosina; Institut für Mikroelektronik, 1990.

4.  H. Pimingstorfer:
"Automatische Übersetzung von FORTRAN nach C";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1989.

3.  F. Fasching:
"F2C - Ein Übersetzer von FORTRAN nach C";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1989.

2.  C. Fischer:
"Gittererzeugung in der zweidimensionalen Halbleiter-Bauelemente-Simulation";
Supervisor: G. Nanz, P. Dickinger, H. Kosina, S. Selberherr; Institut für Mikroelektronik, 1989.

1.  M. Stiftinger:
"Lösungsverfahren für die diskretisierte Kontinuitätsgleichung";
Supervisor: S. Selberherr, O. Heinreichsberger, H. Kosina; Institut für Mikroelektronik, 1989.

Patents

2.  W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
"Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
Patent: United States, No. US 2008/0121996 A1 ; submitted: 2005-09-13, granted: 2008-05-29.

1.  W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
"Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
Patent: Europe, No. EP 1 655 791 A1 ; submitted: 2005-09-09, granted: 2006-05-10.

Scientific Reports

9.   Mennemann, J.-F., Jüngel, A., Kosina, H. (2012).
Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator
 (ASC Report 17/2012; pp. 1–30). Institute of Analysis and Scientific Computing, TU Wien. (reposiTUm)

8.   Grasser, T., Karner, M., Kernstock, C., Kosina, H., Triebl, O. (2010).
Customized Software Development Report.
(reposiTUm)

7.   Kosina, H., Cervenka, J. (2010).
MOdeling and DEsign of Reliable, Process Variation-Aware Nanoelectronic Devices, Circuits and Systems.
(reposiTUm)

6.   Grützmacher, D., Dhar, S., Milovanovic, G., Grasser, T., Kosina, H. (2007).
Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits.
(reposiTUm)

5.   Pourfath, M., Kosina, H. (2007).
Simulation of Carbon Nanotube Transistors.
(reposiTUm)

4.   Karner, M., Baumgartner, O., Kosina, H. (2007).
Threshold Voltage Modeling in Strained Si Using VSP.
(reposiTUm)

3.   Dragosits, K., Harlander, C., Kosik, R., Kosina, H., Nedjalkov, M., Selberherr, S. (2000).
VISTA Status Report June 2000.
(reposiTUm)

2.  K. Dragosits, T. Grasser, H. Kosina, R. Mlekus, W. Pyka, S. Selberherr:
"VISTA Status Report June 1998";
1998; 19 pages.

1.   Knaipp, M., Kosina, H., Mlekus, R., Radi, M., Rottinger, M., Selberherr, S. (1997).
VISTA Status Report June 1997.
(reposiTUm)