Publications Hiwa Mahmoudi

55 records

Publications in Scientific Journals

14.  H. Mahmoudi, H. Zimmermann:
"Bit Error Performance of APD and SPAD Receivers in Optical Wireless Communication";
Electronics, Vol. 10 (2021), No. 22; 1 - 14. https://doi.org/10.3390/electronics10222731

13.   Poushi, S. S. K., Mahmoudi, H., Hofbauer, M., Steindl, B., Schneider-Hornstein, K., Zimmermann, H. (2021).
Experimental and Simulation Study of Fill-Factor Enhancement Using a Virtual Guard Ring in N+∕p-Well CMOS Single-Photon Avalanche Diodes.
Optical Engineering, 60(06). https://doi.org/10.1117/1.oe.60.6.067105 (reposiTUm)

12.  H. Mahmoudi, M. Hofbauer, B. Goll, H. Zimmermann:
"Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation";
Sensors, Vol. 21 (2021), 5287; 19 pages. https://doi.org/10.3390/s21165287

11.   Mahmoudi, H., Poushi, S. S. K., Steindl, B., Hofbauer, M., Zimmermann, H. (2021).
Optical and Electrical Characterization and Modeling of Photon Detection Probability in CMOS Single-Photon Avalanche Diodes.
IEEE Sensors Journal, 21(6), 7572–7580. https://doi.org/10.1109/jsen.2021.3051365 (reposiTUm)

10.  S. S. Kohneh Poushi, H. Mahmoudi, M. Hofbauer, B. Steindl, H. Zimmermann:
"Photon detection probability enhancement using an anti-reflection coating in CMOS-based SPADs";
Applied Optics, Vol. 60 (2021), No. 25; 7815 - 7820. https://doi.org/10.1364/AO.432219

9.   Dervić, A., Tadić, N., Mahmoudi, H., Goll, B., Hofbauer, M., Zimmermann, H. (2020).
Single-Pixel Postprocessing-Free 5 Mbps Quantumrandom Number Generator Using a Single-Photon Avalanche Diode Detector and a T/(T − T) Pulse-Shaped Laser Driver.
Optical Engineering, 59(12). https://doi.org/10.1117/1.oe.59.12.127105 (reposiTUm)

8.   Mahmoudi, H., Hofbauer, M., Steindl, B., Schneider-Hornstein, K., Zimmermann, H. (2019).
Statistical Study of Intrinsic Parasitics in an SPAD-Based Integrated Fiber Optical Receiver.
IEEE Transactions on Electron Devices, 66(1), 497–504. https://doi.org/10.1109/ted.2018.2882344 (reposiTUm)

7.   Mahmoudi, H., Hofbauer, M., Steindl, B., Schneider-Hornstein, K., Zimmermann, H. (2018).
Modeling and Analysis of BER Performance in a SPAD-Based Integrated Fiber Optical.
IEEE Photonics Journal, 10(6), 1–11. https://doi.org/10.1109/jphot.2018.2875519 (reposiTUm)

6.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Novel Bias-Field-Free Spin Transfer Oscillator.
Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 (reposiTUm)

5.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates.
Advanced Materials Research, 854, 89–95. https://doi.org/10.4028/www.scientific.net/amr.854.89 (reposiTUm)

4.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory.
Solid-State Electronics, 84, 191–197. https://doi.org/10.1016/j.sse.2013.02.017 (reposiTUm)

3.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and Its Applications for Measurement.
Journal of Superconductivity and Novel Magnetism, 26(5), 1745–1748. https://doi.org/10.1007/s10948-012-2034-y (reposiTUm)

2.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Multiple Purpose Spin Transfer Torque Operated Devices.
Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w (reposiTUm)

1.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits.
IEEE Transactions on Magnetics, 49(12), 5620–5628. https://doi.org/10.1109/tmag.2013.2278683 (reposiTUm)

Contributions to Books

2.   Windbacher, T., Makarov, A., Selberherr, S., Mahmoudi, H., Malm, B. G., Ekström, M., Östling, M. (2019).
The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing.
In S. K. Kurinec, S. Walia, K. Iniewski (Eds.), Energy Efficient Computing, Electronics: Devices to Systems; Devices, Circuits, and Systems Series (pp. 93–155). CRC Press. (reposiTUm)

1.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing.
In T. Brozek, K. Iniewski (Eds.), Micro- and Nanoelectronics: Emerging Device Challenges and Solutions (pp. 221–250). CRC Press. https://doi.org/10.1201/b17597-11 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

34.   Poushi, S., Mahmoudi, H., Hofbauer, M., Dervic, A., Zimmermann, H. (2022).
Photodetection Characterization of SPADs Fabricated in 0.35µm PIN Photodiode and High Voltage CMOS Technologies.
In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro55190.2022.9803795 (reposiTUm)

33.   Kohneh Poushi, S., Mahmoudi, H., Steindl, B., Hofbauer, M., Zimmermann, H. (2020).
Comprehensive Modeling of Photon Detection Probability in CMOS-based SPADs.
In 2020 IEEE SENSORS, Atlanta, Georgia, USA. https://doi.org/10.1109/sensors47125.2020.9278771 (reposiTUm)

32.   Mahmoudi, H., Hofbauer, M., Goll, B., Schneider-Hornstein, K., Zimmermann, H. (2020).
Optical Wireless Communication With SPAD Receivers.
In The International SPAD Sensor Workshop (p. 1), Edinburgh, Scotland (UK). (reposiTUm)

31.   Mesgari, B., Mahmoudi, H., Zimmermann, H. (2019).
A Single-To-Differential Transimpedance Amplifier for Low-Noise and High-Speed Optical Receivers.
In 2019 Austrochip Workshop on Microelectronics (Austrochip), Vienna, Austria. https://doi.org/10.1109/austrochip.2019.00025 (reposiTUm)

30.   Mahmoudi, H., Zimmermann, H. (2017).
A New Sampling Technique for Monte Carlo-Based Statistical Circuit Analysis.
In Proceedings of the Internation Conference of Design, Automation and Test in Europe. (DATE17) (pp. 1277–1280), Lausanne, Switzerland. (reposiTUm)

29.   Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S. (2017).
MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching, Network (EMN) (pp. 33–34), Milan, Italy. (reposiTUm)

28.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Logic-In-Memory: A Non-Volatile Processing Environment for the Post CMOS Age.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany. (reposiTUm)

27.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 26), Gdynia, Poland. (reposiTUm)

26.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865862 (reposiTUm)

25.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
High Performance MRAM-based Stateful Logic.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813912 (reposiTUm)

24.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931622 (reposiTUm)

23.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813893 (reposiTUm)

22.   Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S. (2014).
Magnetic Tunnel Junctions for Future Memory and Logic-In-Memory Applications.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 17), Gdynia, Poland. (reposiTUm)

21.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling of Spin-Based Silicon Technology.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813891 (reposiTUm)

20.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, Beograd. https://doi.org/10.1109/miel.2014.6842081 (reposiTUm)

19.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Design and Applications of Magnetic Tunnel Junction Based Logic Circuits.
In Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Villach, Austria. https://doi.org/10.1109/prime.2013.6603122 (reposiTUm)

18.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 68–69), Kyiv, Ukraine. (reposiTUm)

17.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
MRAM-based Logic Array for Large-Scale Non-Volatile Logic-In-Memory Applications.
In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623033 (reposiTUm)

16.   Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S. (2013).
Modeling Spin-Based Devices in Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 70–71), Urbana-Champaign, IL, USA. (reposiTUm)

15.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator.
In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 456–457), San Jose, CA, USA. (reposiTUm)

14.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel MTJ-based Shift Register for Non-Volatile Logic Applications.
In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623038 (reposiTUm)

13.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Non-Volatile Magnetic Flip Flop.
In In Proceedings of Seventh International School on Spintronics and Quantum Information Technology (p. 1), Cracow. (reposiTUm)

12.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 244–245), Urbana-Champaign, IL, USA. (reposiTUm)

11.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Performance Analysis and Comparison of Two 1t/1mtj-Based Logic Gates.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650600 (reposiTUm)

10.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650651 (reposiTUm)

9.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration.
In Proceedings of the International Conference on Nanoscale Magnetism (p. 208), Istanbul, Turkey. (reposiTUm)

8.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-In-Memory Applications.
In Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013) (p. 1), Whistler, BC, Canada. (reposiTUm)

7.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 225–228), Denver, Colorado, United States. (reposiTUm)

6.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurements.
In Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012) (p. 1), Istanbul, Turkey. (reposiTUm)

5.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems.
In 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2012.6343381 (reposiTUm)

4.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Novel Memristive Charge- And Flux-Based Sensors.
In Proceedings of the 8th Conference on Ph.D. Research in Microelectronics, Electronics (p. 4), Aachen, Germany. (reposiTUm)

3.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Spintronic Stateful Logic Gates Using Magnetic Tunnel Junctions Written by Spin-Transfer Torque.
In Book of Abstracts (p. P-6), Eindhoven, the Netherlands. (reposiTUm)

2.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
State Drift Optimization of Memristive Stateful IMP Logic Gates.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 243–244), Urbana-Champaign, IL, USA. (reposiTUm)

1.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2011).
Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

Doctor's Theses (authored and supervised)

Patents

4.  H. Mahmoudi, S. Selberherr, V. Sverdlov, T. Windbacher:
"Spin Torque Magnetic Integrated Circuit";
Patent: International, No. WO 2014/154497 A1 ; submitted: 2014-03-13, granted: 2014-10-02.

3.  T. Windbacher, V. Sverdlov, S. Selberherr, H. Mahmoudi:
"Spin Torque Magnetic Integrated Circuit";
Patent: Europe, No. EP 2784 020 A1 ; submitted: 2013-03-27, granted: 2014-10-01.

2.  H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"RRAM Implication Logic Gates";
Patent: International, No. WO 2014/079747 A1 ; submitted: 2013-11-13, granted: 2014-05-30.

1.  H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"RRAM Implication Logic Gates";
Patent: Europe, No. EP 2 736 044 A1 ; submitted: 2012-11-22, granted: 2014-05-28.