Publications Jakob Michl
10 recordsPublications in Scientific Journals
| 4. | Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory. IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm) | |
| 3. | Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental. IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm) | |
| 2. | Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021). On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors. IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm) | |
| 1. | Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
| 5. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
| 4. | Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020). Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures. In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm) | |
| 3. | Tselios, K., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Waltl, M. (2020). Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors. In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312871 (reposiTUm) | |
| 2. | Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020). Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128349 (reposiTUm) | |
| 1. | Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I. (2020). Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128316 (reposiTUm) | |
Doctor's Theses (authored and supervised)
| 1. | Michl, J. D. (2022). Charge Trapping and Variability in CMOS Technologies at Cryogenic Temperatures Technische Universität Wien. https://doi.org/10.34726/hss.2022.105545 (reposiTUm) | |