Publications Marian Molnar
7 recordsPublications in Scientific Journals
2. | Kuzmík, J., Ťapajna, M., Válik, L., Molnar, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, J. (2014). Self-Heating in GaN Transistors Designed for High-Power Operation. IEEE Transactions on Electron Devices, 61(10), 3429–3434. https://doi.org/10.1109/ted.2014.2350516 (reposiTUm) | |
1. | Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., Palankovski, V. (2014). Simulation Study of Interface Traps and Bulk Traps in N++GaN/InAlN/AlN/GaN High Electron Mobility Transistors. Applied Surface Science, 312, 157–161. https://doi.org/10.1016/j.apsusc.2014.04.078 (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
5. | Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013). Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation. In Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (pp. 135–136), Cardiff, Unided Kingdom, Austria. (reposiTUm) | |
4. | Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013). Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures. In Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies (pp. 48–51), High Tatras, Spa Novy Smokovec, Slovakia. (reposiTUm) | |
3. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012). Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs. In Proceedings of the 18th International Conference in the Series of the Solid State Workshops (pp. 190–194), High Tatras, Slovakia. (reposiTUm) | |
2. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012). Electrothermal Analysis of In<inf>0.12</Inf>Al<inf>0.88</Inf>N/GaN HEMTs. In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice Castle, Slovakia. https://doi.org/10.1109/asdam.2012.6418556 (reposiTUm) | |
1. | Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Molnar, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmik, J. (2012). GaN/InAlN/AlN/GaN Normally-Off HEMT With Etched Access Region. In Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (p. 2), Cardiff, Unided Kingdom, Austria. (reposiTUm) | |