Publications Marian Molnar

7 records

Publications in Scientific Journals

2.   Kuzmík, J., Ťapajna, M., Válik, L., Molnar, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, J. (2014).
Self-Heating in GaN Transistors Designed for High-Power Operation.
IEEE Transactions on Electron Devices, 61(10), 3429–3434. https://doi.org/10.1109/ted.2014.2350516 (reposiTUm)

1.   Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., Palankovski, V. (2014).
Simulation Study of Interface Traps and Bulk Traps in N++GaN/InAlN/AlN/GaN High Electron Mobility Transistors.
Applied Surface Science, 312, 157–161. https://doi.org/10.1016/j.apsusc.2014.04.078 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

5.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation.
In Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (pp. 135–136), Cardiff, Unided Kingdom, Austria. (reposiTUm)

4.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures.
In Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies (pp. 48–51), High Tatras, Spa Novy Smokovec, Slovakia. (reposiTUm)

3.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs.
In Proceedings of the 18th International Conference in the Series of the Solid State Workshops (pp. 190–194), High Tatras, Slovakia. (reposiTUm)

2.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Electrothermal Analysis of In<inf>0.12</Inf>Al<inf>0.88</Inf>N/GaN HEMTs.
In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice Castle, Slovakia. https://doi.org/10.1109/asdam.2012.6418556 (reposiTUm)

1.   Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Molnar, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmik, J. (2012).
GaN/InAlN/AlN/GaN Normally-Off HEMT With Etched Access Region.
In Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (p. 2), Cardiff, Unided Kingdom, Austria. (reposiTUm)