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Publications Vassil Palankovski

154 records

Books and Editorships

1.  V. Palankovski, R. Quay:
"Analysis and Simulation of Heterostructure Devices";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7193-6, 309 pages. https://doi.org/10.1007/978-3-7091-0560-3

Publications in Scientific Journals

31.   Palankovski, V., Vainshtein, S., Yuferev, V., Kostamovaara, J., Egorkin, V. (2015).
Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs.
Applied Physics Letters, 106(18), 183505. https://doi.org/10.1063/1.4921006 (reposiTUm)

30.   Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G. (2015).
Investigation of Novel Silicon PV Cells of a Lateral Type.
Silicon, 7(3), 283–291. https://doi.org/10.1007/s12633-014-9227-x (reposiTUm)

29.   Tapajna, M., Killat, N., Palankovski, V., Gregusova, D., Cico, K., Carlin, J.-F., Grandjean, N., Kuball, M., Kuzmik, J. (2014).
Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors.
IEEE Transactions on Electron Devices, 61(8), 2793–2801. https://doi.org/10.1109/ted.2014.2332235 (reposiTUm)

28.   Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., Palankovski, V. (2014).
Simulation Study of Interface Traps and Bulk Traps in N++GaN/InAlN/AlN/GaN High Electron Mobility Transistors.
Applied Surface Science, 312, 157–161. https://doi.org/10.1016/j.apsusc.2014.04.078 (reposiTUm)

27.   Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, S., Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J. (2013).
Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region.
IEEE Electron Device Letters, 34(3), 432–434. https://doi.org/10.1109/led.2013.2241388 (reposiTUm)

26.   Kuzmik, J., Vitanov, S., Dua, C., Carlin, J.-F., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., Palankovski, V. (2012).
Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors.
Japanese Journal of Applied Physics, 51(5R), 054102. https://doi.org/10.1143/jjap.51.054102 (reposiTUm)

25.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S. (2012).
Physics-Based Modeling of GaN HEMTs.
IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 (reposiTUm)

24.   García-Barrientos, A., Palankovski, V. (2011).
Numerical Simulations of Amplification of Space Charge Waves in N-InP Films.
Materials Science and Engineering: B, 176(17), 1368–1372. https://doi.org/10.1016/j.mseb.2011.02.014 (reposiTUm)

23.   Garcia-Barrientos, A., Palankovski, V. (2011).
Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion Under Negative Differential Conductivity.
Applied Physics Letters, 98(7), 072110. https://doi.org/10.1063/1.3555467 (reposiTUm)

22.   Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., Ambacher, O. (2010).
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.
IEICE Transactions on Electronics, E93-C(8), 1238–1244. (reposiTUm)

21.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010).
High-Temperature Modeling of AlGaN/GaN HEMTs.
Solid-State Electronics, 54(10), 1105–1112. https://doi.org/10.1016/j.sse.2010.05.026 (reposiTUm)

20.   Garcia-Barrientos, A., Grimalsky, V., Gutierrez-Dominguez, E. A., Palankovski, V. (2009).
Nonstationary Effects of the Space Charge in Semiconductor Structures.
Journal of Applied Physics, 105(7), 074501. https://doi.org/10.1063/1.3093689 (reposiTUm)

19.   Vainshtein, S., Yuferev, V., Palankovski, V., Ong, D.-S., Kostamovaara, J. (2008).
Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison Between an Experiment and Simulations.
Applied Physics Letters, 92(6), 062114. https://doi.org/10.1063/1.2870096 (reposiTUm)

18.   Vitanov, S., Palankovski, V. (2008).
Normally-Off AlGaN/GaN HEMTs With InGaN Cap Layer: A Simulation Study.
Solid-State Electronics, 52(11), 1791–1795. https://doi.org/10.1016/j.sse.2008.07.011 (reposiTUm)

17.   Nedjalkov, M., Vasileska, D., Atanassov, E., Palankovski, V. (2007).
Ultrafast Wigner Transport in Quantum Wires.
Journal of Computational Electronics, 6(1–3), 235–238. https://doi.org/10.1007/s10825-006-0101-y (reposiTUm)

16.   Nedjalkov, M., Vasileska, D., Ferry, D. K., Jacoboni, C., Ringhofer, C., Dimov, I., Palankovski, V. (2006).
Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires.
Physical Review B, 74(035311). https://doi.org/10.1103/physrevb.74.035311 (reposiTUm)

15.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., Selberherr, S. (2005).
Electron Mobility Model for Strained-Si Devices.
IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788 (reposiTUm)

14.  V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology (invited), 4 (2004), 1; 15 - 25.

13.  S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 365 - 369. https://doi.org/10.1016/j.apsusc.2003.09.035

12.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224 (2004), 1-4; 361 - 364. https://doi.org/10.1016/j.apsusc.2003.09.034

11.  V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability (invited), 44 (2004), 6; 889 - 897. https://doi.org/10.1016/j.microrel.2004.02.009

10.  V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 312 - 319. https://doi.org/10.1016/j.apsusc.2003.09.036

9.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48 (2001), 10; 2331 - 2336. https://doi.org/10.1109/16.954473

8.  V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
Radiation Effects and Defects in Solids, 156 (2001), 1-4; 261 - 265. https://doi.org/10.1080/10420150108216903

7.  V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits (invited), 36 (2001), 9; 1365 - 1370. https://doi.org/10.1109/4.944664

6.  V. Palankovski, S. Selberherr:
"Micro Materials Modeling in MINIMOS-NT";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7 (2001), 4; 183 - 187. https://doi.org/10.1007/s005420000076

5.  R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices, 48 (2001), 2; 210 - 217. https://doi.org/10.1109/16.902718

4.  V. Palankovski, R. Schultheis, S. Selberherr:
"Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
IEEE Transactions on Electron Devices, 48 (2001), 6; 1264 - 1269. https://doi.org/10.1109/16.925258

3.  R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing, 3 (2000), 1-2; 149 - 155. https://doi.org/10.1016/S1369-8001(00)00015-9

2.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43 (1999), 9; 1791 - 1795. https://doi.org/10.1016/S0038-1101(99)00132-X

1.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B, 66 (1999), 1-3; 46 - 49. https://doi.org/10.1016/S0921-5107(99)00118-X

Contributions to Books

4.   Palankovski, V., Kuzmik, J. (2012).
A Promising New N++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications.
In R. Garg, K. Shenai (Eds.), ECS Transactions (pp. 291–296). ECS Transactions. https://doi.org/10.1149/05003.0291ecst (reposiTUm)

3.   Palankovski, V., Donnarumma, G., Kuzmik, J. (2012).
Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation.
In R. Garg, K. Shenai (Eds.), ECS Transactions (pp. 223–228). ECS Transactions. https://doi.org/10.1149/05003.0223ecst (reposiTUm)

2.   Vitanov, S., Nedjalkov, M., Palankovski, V. (2007).
A Monte Carlo Model of Piezoelectric Scattering in GaN.
In T. Boyanov, S. Dimova, K. Georgiev, G. Nikolov (Eds.), Numerical Methods and Applications (pp. 197–204). Springer-Verlag, Berlin-Heidelberg. https://doi.org/10.1007/978-3-540-70942-8_23 (reposiTUm)

1.   Wagner, M., Span, G., Holzer, S., Palankovski, V., Triebl, O., Grasser, T. (2006).
Power Output Improvement of Silicon-Germanium Thermoelectric Generators.
In ECS Transactions (pp. 1151–1162). ECS Transactions. https://doi.org/10.1149/1.2355909 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

105.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation.
In Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (pp. 135–136), Cardiff, Unided Kingdom, Austria. (reposiTUm)

104.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures.
In Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies (pp. 48–51), High Tatras, Spa Novy Smokovec, Slovakia. (reposiTUm)

103.   Palankovski, V., Kuzmik, J. (2012).
A Promising New N++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications.
In ECS Meeting Abstracts (p. 1), Honolulu, USA. (reposiTUm)

102.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs.
In Proceedings of the 18th International Conference in the Series of the Solid State Workshops (pp. 190–194), High Tatras, Slovakia. (reposiTUm)

101.   Palankovski, V., Kuzmik, J. (2012).
Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation.
In ECS Meeting Abstracts (p. 1), Honolulu, USA. (reposiTUm)

100.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Electrothermal Analysis of In<inf>0.12</Inf>Al<inf>0.88</Inf>N/GaN HEMTs.
In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice Castle, Slovakia. https://doi.org/10.1109/asdam.2012.6418556 (reposiTUm)

99.   Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Molnar, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmik, J. (2012).
GaN/InAlN/AlN/GaN Normally-Off HEMT With Etched Access Region.
In Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (p. 2), Cardiff, Unided Kingdom, Austria. (reposiTUm)

98.   Donnarumma, G., Palankovski, V., Selberherr, S. (2012).
Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4h-SiC P-I-N Diode.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 125–128), Denver, Colorado, United States. (reposiTUm)

97.   Serrano-Lopez, I., Garcia-Barrientos, A., Palankovski, V., del Carmen Cruz-Netro, L. (2012).
Non-Stationary Effects of Space Charge in InN Films.
In XXI International Materials Research Congress (p. 1), Cancun, Mexico. (reposiTUm)

96.   Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Cico, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmik, J. (2012).
Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT.
In International Workshop on Nitride Semiconductors (p. 2), Sapporo, Japan. (reposiTUm)

95.   Vitanov, S., Kuzmik, J., Palankovski, V. (2011).
Normally-Off InAlN/GaN HEMTs With N<sup>&#x002B;&#x002B;</Sup> GaN Cap Layer: A Simulation Study.
In 2011 International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA. https://doi.org/10.1109/isdrs.2011.6135161 (reposiTUm)

94.   Aloise, G., Vitanov, S., Palankovski, V. (2011).
Performance Study of Nitride-Based Gunn Diodes.
In Technical Proceedings of the 2011 NSTI Nanotechnology Conference, Expo - Nanotech 2011 (p. 4), Boston, USA. (reposiTUm)

93.   Vitanov, S., Kuzmik, J., Palankovski, V. (2011).
Study of the Conduction Properties of the N++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs.
In Annual Journal of Electronics (pp. 113–116), Sozopol, Bulgaria. (reposiTUm)

92.   Aloise, G., Vitanov, S., Palankovski, V. (2011).
Temperature Dependence of the Transport Properties of InN.
In Official Proceedings of Microtherm 2011 (p. 6), Lodz, Poland. (reposiTUm)

91.   Garcia-Barrientos, A., Palankovski, V., Grimalsky, V. (2010).
Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films.
In 2010 27th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2010.5490510 (reposiTUm)

90.   Garcia-Barrientos, A., Palankovski, V. (2010).
Amplification of Space Charge Waves in N-InP Films.
In 2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control, Chiapas, Mexico. https://doi.org/10.1109/iceee.2010.5608605 (reposiTUm)

89.   Vainshtein, S., Yuferev, V., Kostamovaara, J., Palankovski, V. (2010).
Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications.
In Annual Journal of Electronics (pp. 12–17), Sozopol. (reposiTUm)

88.   Vitanov, S., Palankovski, V. (2010).
Electron Mobility Models for III-Nitrides.
In Annual Journal of Electronics (pp. 18–21), Sozopol. (reposiTUm)

87.   Vitanov, S., Palankovski, V. (2010).
High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs.
In Proceedings of the Junior Scientist Conference (pp. 59–60), Vienna, Austria. (reposiTUm)

86.   Vitanov, S., Palankovski, V., Selberherr, S. (2010).
Hydrodynamic Models for GaN-Based HEMTs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

85.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010).
Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

84.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009).
A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs With Recessed Gates.
In HETECH 2009 Book of Abstracts (pp. 109–110), Smolenice Castle, Slovakia, Austria. (reposiTUm)

83.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009).
High-Temperature Modeling of AlGaN/GaN HEMTs.
In 2009 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2009.5378300 (reposiTUm)

82.   Vitanov, S., Palankovski, V. (2009).
Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs.
In Annual Journal of Electronics (pp. 144–147), Sozopol. (reposiTUm)

81.   Vitanov, S., Palankovski, V. (2008).
Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation.
In Junior Scientist Conference Proceedings (pp. 221–222), Vienna, Austria. (reposiTUm)

80.   Palankovski, V., Wagner, M., Heiss, W. (2008).
Monte Carlo Simulation of Electron Transport in PbTe.
In Springer Proceedings in Physics (pp. 77–79). https://doi.org/10.1007/978-1-4020-8425-6_19 (reposiTUm)

79.   Vitanov, S., Palankovski, V. (2008).
Monte Carlo Study of Transport Properties of InN.
In Springer Proceedings in Physics (pp. 97–100). https://doi.org/10.1007/978-1-4020-8425-6_24 (reposiTUm)

78.   Palankovski, V. (2008).
Novel High-Performance GaN Transistors.
In Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW) (p. MO-03), Kona. (reposiTUm)

77.   Vitanov, S., Palankovski, V. (2008).
Simulation of AlGaN/GaN HEMTs With InGaN Cap Layer.
In The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4 (pp. 67–70), Sozopol. (reposiTUm)

76.   Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., Quay, R. (2008).
Systematical Study of InAlN/GaN Devices by Numerical Simulation.
In HETECH 2008 Book of Abstracts (pp. 159–160), Smolenice Castle, Slovakia, Austria. (reposiTUm)

75.   Vitanov, S., Vitanov, P., Palankovski, V. (2008).
Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon.
In 23rd European Photovoltaic Solar Energy Conference (pp. 1743–1745), Valencia. (reposiTUm)

74.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Hydrodynamic Modeling of AlGaN/GaN HEMTs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_65 (reposiTUm)

73.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007).
Modeling of Electron Transport in GaN-Based Materials and Devices.
In AIP Conference Proceedings, Vol. 893 (pp. 1399–1400). (reposiTUm)

72.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007).
Modeling of Electron Transport in GaN-based Materials and Devices.
In 28th International Conference on the Physics of Semiconductors (p. 244), Vienna, Austria, Austria. (reposiTUm)

71.   Palankovski, V., Wagner, M., Heiss, W. (2007).
Monte Carlo Simulation of Electron Transport in PbTe.
In The 13thInternational Conference on Narrow Gap Semiconductors (p. 50), Guildford. (reposiTUm)

70.   Vitanov, S., Palankovski, V. (2007).
Monte Carlo Study of Transport Properties of InN.
In The 13th International Conference on Narrow Gap Semiconductors (p. 99), Guildford. (reposiTUm)

69.   Vitanov, S., Palankovski, V. (2007).
Normally-Off AlGaN/GaN HEMTs With InGaN Cap Layer: A Theoretical Study.
In 2007 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2007.4422390 (reposiTUm)

68.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Predictive Simulation of AlGaN/GaN HEMTs.
In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio. https://doi.org/10.1109/csics07.2007.31 (reposiTUm)

67.   Vitanov, S., Nedjalkov, M., Palankovski, V. (2006).
A Monte Carlo Model of Piezoelectric Scattering in GaN.
In Sixth International Conference on Numerical Methods and Applications Abstracts (p. B-75), Borovets. (reposiTUm)

66.   Nedjalkov, M., Gurov, T., Kosina, H., Vasileska, D., Palankovski, V. (2006).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 149–156), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_15 (reposiTUm)

65.   Gurov, T., Atanassov, E., Dimov, I., Palankovski, V. (2006).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part II: Stochastic Approach and Grid Implementation.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 157–163), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_16 (reposiTUm)

64.   Palankovski, V., Vitanov, S., Quay, R. (2006).
Field-Plate Optimization of AlGaN/GaN HEMTs.
In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, San Antonio. https://doi.org/10.1109/csics.2006.319926 (reposiTUm)

63.   Palankovski, V., Marchlewski, A., Ungersböck, S., Selberherr, S. (2006).
Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices.
In 5th Mathmod Vienna Proceedings (pp. 14-1–14-9), Wien, Austria. (reposiTUm)

62.   Gurov, T., Atanassov, E., Nedjalkov, M., Palankovski, V. (2006).
Monte Carlo Method for Modeling of Electron Transport in Quantum Wires.
In 5th Mathmod Vienna Proceedings (pp. 13-1–13-8), Wien, Austria. (reposiTUm)

61.   Dhar, S., Ungersböck, S., Nedjalkov, M., Palankovski, V. (2006).
Monte Carlo Simulation of the Electron Mobility in Strained Silicon.
In The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2 (pp. 169–173), Sozopol. (reposiTUm)

60.   Vitanov, P., LeQuang, N., Harizanova, A., Nichiporuk, O., Ivanova, T., Vitanov, S., Palankovski, V. (2006).
New Surface Passivation and Local Contacts on the Backside for Thin Mc-Si Solar Cells.
In World Renewable Energy Congress IX Book of Abstracts (p. 564), Firenze. (reposiTUm)

59.   Vitanov, P., Vitanov, S., Palankovski, V. (2006).
Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells.
In 21st European Photovoltaic Solar Energy Conference (pp. 1475–1478), Dresden. (reposiTUm)

58.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2006).
Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs.
In TARGET Days 2006 Book of Proceedings (pp. 81–84), Frascati. (reposiTUm)

57.   Palankovski, V., Hristov, M., Philippov, P. (2006).
Two-Dimensional Physical AC-Simulation of GaAs HBTs.
In The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2 (pp. 164–168), Sozopol. (reposiTUm)

56.  M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
"Ultrafast Wigner Transport in Quantum Wires";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 285 - 286.

55.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S., Selberherr, S. (2005).
A Physically-Based Electron Mobility Model for Strained Si Devices.
In NSTI Nanotech Technical Proceedings (pp. 13–16), Anaheim, Austria. (reposiTUm)

54.  G. Angelov, V. Palankovski, M. Hristov, P. Philippov:
"Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 2005-05-19 - 2005-05-22; in: "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4; 486 - 491. https://doi.org/10.1109/ISSE.2005.1491077

53.   Gurov, T., Atanasov, E., Dimov, I., Palankovski, V., Smirnov, S. (2005).
Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation.
In Book of Abstracts (pp. 26–27), Sozopol, Bulgaria. (reposiTUm)

52.   Nedjalkov, M., Gurov, T., Kosina, H., Vasileska, D., Palankovski, V. (2005).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (p. 46), Sozopol, Bulgaria. (reposiTUm)

51.  V. Palankovski, S. Selberherr:
"Analysis of High Speed Heterostructure Devices";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 2004-05-16 - 2004-05-19; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; 115 - 122. https://doi.org/10.1109/ICMEL.2004.1314567

50.  V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

49.  H. Kosina, V. Palankovski:
"Mobility Enhancement in Strained CMOS Devices";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu (invited); 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 101 - 105.

48.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; 793 - 796. https://doi.org/10.13140/2.1.1839.7126

47.  V. Palankovski, S. Selberherr:
"Numerical Simulation of Selected Semiconductor Devices";
Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; 122 - 125. https://doi.org/10.1109/ISSE.2004.1490390

46.  S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 83 - 84.

45.  V. Palankovski, S. Selberherr:
"Challenges in Modeling of High-Speed Electron Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras (invited); 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 45 - 50.

44.  V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Talk: Symposium on Diagnostics and Yield, Warsaw (invited); 2003-06-22 - 2003-06-25; in: "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), 1 - 11.

43.  K. Dragosits, V. Palankovski, S. Selberherr:
"Mobility Modeling in Presence of Quantum Effects";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 271 - 274. https://doi.org/10.1109/SISPAD.2003.1233689

42.  V. Palankovski, S. Selberherr:
"Modeling High Speed Semiconductor Devices of Modern Communication Systems";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2003-07-27 - 2003-07-30; in: "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9; 97 - 102.

41.  V. Palankovski, S. Wagner, S. Selberherr:
"Numerical Analysis of Compound Semiconductor RF Devices";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego (invited); 2003-11-09 - 2003-11-12; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4; 107 - 110. https://doi.org/10.1109/GAAS.2003.1252374

40.  S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 836 - 838.

39.  S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 383 - 388.

38.  V. Palankovski, S. Selberherr:
"Optimization of SiGe HBTs for Industrial Applications";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya (invited); 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 267 - 268.

37.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

36.  V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (invited); 2003-12-16 - 2003-12-18; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4; 127 - 132. https://doi.org/10.1109/EDSSC.2003.1283498

35.  V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in: "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3; 303 - 306.

34.  V. Gopinath, S. Aronowitz, V. Palankovski, S. Selberherr:
"Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior";
Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; 631 - 634. https://doi.org/10.1109/ESSDERC.2002.195010

33.  S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in: "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0; 50 - 55. https://doi.org/10.1109/EDMO.2002.1174929

32.  V. Palankovski, R. Klima, R. Schultheis, S. Selberherr:
"Three-Dimensional Analysis of Leakage Currents in III-V HBTs";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 2002-10-20 - 2002-10-23; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9; 229 - 232. https://doi.org/10.1109/GAAS.2002.1049066

31.  K. Dragosits, V. Palankovski, S. Selberherr:
"Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 113 - 116.

30.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 428 - 431. https://doi.org/10.1007/978-3-7091-6244-6_99

29.  R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr:
"A Review of Modeling Issues for RF Heterostructure Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 432 - 435. https://doi.org/10.1007/978-3-7091-6244-6_100

28.  V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; 187 - 191. https://doi.org/10.1109/EDMO.2001.974305

27.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; 201 - 206. https://doi.org/10.1109/NANO.2001.966419

26.  T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 324 - 327. https://doi.org/10.1109/ESSDERC.2000.194780

25.  V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
"Analysis of HBT Behavior After Strong Electrothermal Stress";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 245 - 248. https://doi.org/10.1109/SISPAD.2000.871254

24.  V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based HBTs";
Poster: International Conference on Defects in Insulating Materials, Johannesburg; 2000-04-03 - 2000-04-07; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), 188.

23.  V. Palankovski, S. Selberherr:
"III-V Semiconductor Materials in MINIMOS-NT";
Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 2000-04-24 - 2000-04-28; in: "Abstracts MRS Spring Meeting", (2000), 249.

22.  V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle (invited); 2000-11-05 - 2000-11-08; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2; 117 - 120. https://doi.org/10.1109/GAAS.2000.906305

21.  V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Investigations on the Impact of the InGaP Ledge on HBT-Performance";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 2000-05-29 - 2000-06-02; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9; 5 - 6.

20.  R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 74 - 77. https://doi.org/10.1109/SISPAD.2000.871210

19.  R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr:
"Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2000-12-10 - 2000-12-13; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4; 186 - 189. https://doi.org/10.1109/IEDM.2000.904289

18.  V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 608 - 611. https://doi.org/10.1109/ESSDERC.2000.194851

17.  V. Palankovski, S. Selberherr:
"State-of-the-art Micro Materials Models in MINIMOS-NT";
Talk: International Conference on Micro Materials, Berlin; 2000-05-17 - 2000-05-19; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; 290 - 291.

16.  V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr:
"A New Analytical Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 395 - 398.

15.  V. Palankovski, R. Strasser, H. Kosina, S. Selberherr:
"A Systematic Approach for Model Extraction for Device Simulation Application";
Talk: International Conference on Applied Modelling and Simulation, Cairns; 1999-09-01 - 1999-09-03; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; 463 - 466.

14.  R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Talk: Materials Research Society Spring Meeting (MRS), Strasbourg; 1999-06-01 - 1999-06-04; in: "Abstracts E-MRS Spring Meeting", (1999), L-7.

13.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Analytical Model for the Electron Energy Relaxation Time";
Talk: Conference De Dispositivos Electronicos, Madrid; 1999-06-10 - 1999-06-11; in: "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5; 263 - 266.

12.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modelling and Simulation, Philadelphia; 1999-05-05 - 1999-05-08; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8; 367 - 370.

11.  R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr:
"III/V Device Optimization by Physics Based S-Parameter Simulation";
Talk: International Symposium on Compound Semiconductors (ISCS), Berlin; 1999-08-22 - 1999-08-26; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8; 325 - 328.

10.  V. Palankovski, R. Quay, S. Selberherr, R. Schultheis:
"S-Parameter Simulation of HBTs on Gallium-Arsenide";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x; 15 - 19. https://doi.org/10.1109/EDMO.1999.821087

9.  V. Palankovski, S. Selberherr, R. Schultheis:
"Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 227 - 230. https://doi.org/10.1109/SISPAD.1999.799302

8.  V. Palankovski, S. Selberherr:
"Thermal Models for Semiconductor Device Simulation";
Talk: Conference on High Temperature Electronics (HITEN), Berlin; 1999-07-04 - 1999-07-07; in: "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7; 25 - 28. https://doi.org/10.1109/HITEN.1999.827343

7.  V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 105 - 108. https://doi.org/10.1007/978-3-7091-6827-1_29

6.  T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 247 - 250. https://doi.org/10.1007/978-3-7091-6827-1_62

5.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance";
Talk: European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 1998-06-24 - 1998-06-26; in: "Proceedings European Workshop on Low Temperature Electronics 3", L. Brogiato, D.V. Camin, G. Pessina (ed.); Journal de Physique IV, 8 (1998), 91 - 94. https://doi.org/10.1051/jp4:1998321

4.  V. Palankovski, M. Knaipp, S. Selberherr:
"Influence of the Material Composition and Doping Profiles on HBTs Device Performance";
Talk: International Conference on Modelling and Simulation, Pittsburgh; 1998-05-13 - 1998-05-16; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4; 7 - 10.

3.  R. Quay, R. Reuter, V. Palankovski, S. Selberherr:
"S-Parameter Simulation of RF-HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 1998-11-24; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6; 13 - 18.

2.  V. Palankovski, T. Grasser, S. Selberherr:
"SiGe HBT in Mixed-Mode Device and Circuit Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156.

1.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 1998-06-21 - 1998-06-24; in: "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", PSA, (1998), 15.

Talks and Poster Presentations (without Proceedings-Entry)

6.   Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G. (2012).
Large Silicon Solar Cells of a Lateral Type.
2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium, EU. (reposiTUm)

5.   Palankovski, V. (2012).
Photovoltaic and Thermoelectric Devices for Renewable Energy Harnessing.
Electronica, München, EU. (reposiTUm)

4.   Palankovski, V. (2009).
Analysis and Simulation of Semicondutor Devices.
3er. Congreso Nacional de Mecatronica, Zempoala, Mexico, Non-EU. (reposiTUm)

3.   Palankovski, V. (2006).
Advanced Device Modeling for High Frequency Applications.
Compact Modeling for RF/Microwave Applications (CMRF), Maastricht, EU. (reposiTUm)

2.   Palankovski, V. (2002).
Simulation Von SiGe Bauelementen.
GMM Workshop, München, Austria. (reposiTUm)

1.   Palankovski, V., Rottinger, M., Simlinger, T., Selberherr, S. (1997).
Two-Dimensional Simulation and Comparison of Si-Based and GaAs-based HBTs.
III-V Semiconductor Device Simulation Workshop, Turin, Austria. (reposiTUm)

Doctor's Theses (authored and supervised)

1.   Palankovski, V. (2000).
Simulation of Heterojunction Bipolar Transistors
 Technische Universität Wien. https://doi.org/10.34726/hss.2000.03142613 (reposiTUm)

Diploma and Master Theses (authored and supervised)

1.  I. Serrano-Lopez:
"Study of Non-Stationary Effects of Space Charge in InN Films for Amplifiers and Delay Lines";
Supervisor: A. Garcia-Barrientos, V. Palankovski; Universidad Politecnica de Pachua (UPP), Mexico, 2013; final examination: 2013-02-12.

Scientific Reports

5.   Palankovski, V. (2007).
Simulation of Advanced Semiconductor Devices
 (START Project Y247-N13). (reposiTUm)

4.   Hollauer, C., Sheikholeslami, A., Palankovski, V., Wagner, S., Wittmann, R., Selberherr, S. (2003).
VISTA Status Report June 2003.
(reposiTUm)

3.   Ceric, H., Dragosits, K., Gehring, A., Smirnov, S., Palankovski, V., Selberherr, S. (2002).
VISTA Status Report December 2002.
(reposiTUm)

2.   Binder, T., Gritsch, M., Heitzinger, C., Palankovski, V., Selberherr, S. (2000).
VISTA Status Report December 2000.
(reposiTUm)

1.   Klima, R., Palankovski, V., Radi, M., Strasser, R., Selberherr, S. (1998).
VISTA Status Report December 1998.
(reposiTUm)