Publications Jong Mun Park
27 recordsPublications in Scientific Journals
8. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179 (2011), 267 - 272. https://doi.org/10.4028/www.scientific.net/SSP.178-179.267 | |
7. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51 (2011), 1525 - 1529. https://doi.org/10.1016/j.microrel.2011.07.089 | |
6. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29 (2011), 01AB09-1 - 01AB09-8. https://doi.org/10.1116/1.3534021 | |
5. | C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr: "A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24 (2005), 10; 1485 - 1491. https://doi.org/10.1109/TCAD.2005.852297 | |
4. | J.M. Park, R. Klima, S. Selberherr: "High-Voltage Lateral Trench Gate SOI-LDMOSFETs"; Microelectronics Journal, 35 (2004), 3; 299 - 304. https://doi.org/10.1016/S0026-2692(03)00192-7 | |
3. | J.M. Park, S. Wagner, T. Grasser, S. Selberherr: "New SOI Lateral Power Devices with Trench Oxide"; Solid-State Electronics, 48 (2004), 6; 1007 - 1015. https://doi.org/10.1016/j.sse.2003.12.015 | |
2. | J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "A Numerical Study of Partial-SOI LDMOSFETs"; Solid-State Electronics, 47 (2003), 2; 275 - 281. https://doi.org/10.1016/S0038-1101(02)00207-1 | |
1. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Microelectronics Reliability, 43 (2003), 9-11; 1889 - 1894. https://doi.org/10.1016/S0026-2714(03)00321-4 | |
Talks and Poster Presentations (with Proceedings-Entry)
16. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 5. https://doi.org/10.1109/IPFA.2012.6306265 | |
15. | J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser: "TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors"; Talk: European Workshop on CMOS Variability, Nice, France; 2012-06-11 - 2012-06-12; in: "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3; 4 pages. | |
14. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in: "GADEST 2011: Abstract Booklet", (2011), 105 - 106. | |
13. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), 1525 - 1529. | |
12. | S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. | |
11. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 139 - 144. | |
10. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 128. | |
9. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 341 - 345. | |
8. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 pages. | |
7. | C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr: "A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 457 - 460. | |
6. | J.M. Park, T. Grasser, S. Selberherr: "High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length"; Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; 273 - 282. | |
5. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Modeling and Simulation of SiC MOSFETs"; Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; 552 - 556. | |
4. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 581 - 584. | |
3. | J.M. Park, R. Klima, S. Selberherr: "High-Voltage Lateral Trench Gate SOI LDMOSFETs"; Poster: International Seminar on Power Semiconductors (ISPS), Prague; 2002-09-04 - 2002-09-06; in: "Proceedings ISPS 2002", (2002), ISBN: 80-01-02595-0; 241 - 244. | |
2. | J.M. Park, R. Klima, S. Selberherr: "Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance"; Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; 283 - 286. | |
1. | J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "Numerical Study of Partial-SOI LDMOSFET Power Devices"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in: "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117. | |
Talks and Poster Presentations (without Proceedings-Entry)
1. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10. | |
Doctor's Theses (authored and supervised)
1. | J.M. Park: "Novel Power Devices for Smart Power Applications"; Supervisor, Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2004; oral examination: 2004-12-07. https://doi.org/10.34726/hss.2004.1715 | |
Scientific Reports
1. | M. Gritsch, C. Heitzinger, J.M. Park, R. Klima, R. Rodriguez-Torres, S. Selberherr: "VISTA Status Report June 2002"; 2002; 44 pages. | |