Staff Person Publications

Publications Gregor Pobegen

39 records

Publications in Scientific Journals

25.		B. Butej, V Padovan, D. Pogany, G. Pobegen, C. Ostermaier, C Koller: "Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants"; IEEE Transactions on Electron Devices, 69 (2022), 6; 3087 - 3093.

24.		B. Ruch, M. Jech, G. Pobegen, T. Grasser: "Applicability of Shockley-Read-Hall Theory for Interface States"; IEEE Transactions on Electron Devices, 68 (2021), 4; 2092 - 2097. https://doi.org/10.1109/TED.2021.3049760

23.		F. Triendl, G. Pfusterschmied, S. Schwarz, G. Pobegen, J. Konrath, U. Schmid: "Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes"; Semiconductor Science and Technology, 36 (2021), 055021; 1 - 8. https://doi.org/10.1088/1361-6641/abf29b

22.		F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J. Konrath, U. Schmid: "Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H-SiC"; Materials Science in Semiconductor Processing, 131 (2021), 105888; 1 - 8. https://doi.org/10.1016/j.mssp.2021.105888

21.		B. Ruch, G. Pobegen, T. Grasser: "Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs"; IEEE Transactions on Electron Devices, 68 (2021), 4; 1804 - 1809. https://doi.org/10.1109/TED.2021.3060697

20.		B. Ruch, G. Pobegen, T. Grasser: "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping"; IEEE Transactions on Electron Devices, 67 (2020), 10; 4092 - 4098. https://doi.org/10.1109/TED.2020.3018091

19.		F. Triendl, G. Pfusterschmied, G. Pobegen, J. Konrath, U. Schmid: "Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes"; Semiconductor Science and Technology, 35 (2020), 1 - 13. https://doi.org/10.1088/1361-6641/abae8d

18.		J. Berens, G. Pobegen, T. Grasser: "Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 1004 (2020), 652 - 658. https://doi.org/10.4028/www.scientific.net/MSF.1004.652

17.		R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser: "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs"; IEEE Transactions on Device and Materials Reliability, 19 (2019), 1; 133 - 139. https://doi.org/10.1109/TDMR.2019.2891794

16.		J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser: "Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 963 (2019), 175 - 179. https://doi.org/10.4028/www.scientific.net/MSF.963.175

15.		J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser: "NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability"; IEEE Transactions on Electron Devices, 66 (2019), 11; 4692 - 4697. https://doi.org/10.1109/TED.2019.2941723

14.		C Koller, G. Pobegen, C. Ostermaier, G. Hecke, R. Neumann, M. Holzbauer, G. Strasser, D. Pogany: "Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaN"; Physica Status Solidi B - Basic Solid State Physics, 256 (2019), 1800527; 1800527-1 - 1800527-8. https://doi.org/10.1002/pssb.201800527

13.		G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning"; Materials Science Forum, 924 (2018), 671 - 675. https://doi.org/10.4028/www.scientific.net/MSF.924.671

12.		G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique"; IEEE Transactions on Electron Devices, 25 (2018), 4; 1419 - 1426. https://doi.org/10.1109/TED.2018.2803283

11.		R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64 (2017), 3; 1045 - 1052. https://doi.org/10.1109/TED.2017.2655367

10.		G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique"; Materials Science Forum, 897 (2017), 143 - 146. https://doi.org/10.4028/www.scientific.net/MSF.897.143

9.		C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany: "The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers"; Applied Physics Letters, 111 (2017), 0321061 - 0321065.

8.		R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces"; Solid-State Electronics, 125 (2016), 142 - 153. https://doi.org/10.1016/j.sse.2016.07.017

7.		G. Rescher, G. Pobegen, T. Grasser: "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress"; Materials Science Forum, 858 (2016), 481 - 484. https://doi.org/10.4028/www.scientific.net/MSF.858.481

6.		G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser: "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs"; Materials Science Forum, 778-780 (2014), 959 - 962. https://doi.org/10.4028/www.scientific.net/MSF.778-780.959

5.		G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser: "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures"; IEEE Transactions on Device and Materials Reliability, 99 (2013), PP; 1 - 8. https://doi.org/10.1109/TDMR.2013.2265015

4.		G. Pobegen, T. Grasser: "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps"; Materials Science Forum, 740-742 (2013), 757 - 760. https://doi.org/10.4028/www.scientific.net/MSF.740-742.757

3.		G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser: "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation"; IEEE Electron Device Letters, 34 (2013), 8; 939 - 941. https://doi.org/10.1109/LED.2013.2262521

2.		G. Pobegen, T. Grasser: "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale"; IEEE Transactions on Electron Devices, 60 (2013), 7; 2148 - 2155. https://doi.org/10.1109/TED.2013.2264816

1.		P. Lagger, A. Schiffmann, G. Pobegen, D. Pogany, C. Ostermaier: "Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs"; IEEE Electron Device Letters, 34 (2013), 9; 1112 - 1114.

Talks and Poster Presentations (with Proceedings-Entry)

8.		B. Ruch, M. Jech, G. Pobegen, T. Grasser: "Applicability of Shockley-Read-Hall Theory for Interface States"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 2020-12-12 - 2020-12-18; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), 449 - 452. https://doi.org/10.1109/IEDM13553.2020.9372032

7.		B. Ruch, G. Pobegen, C. Schleich, T. Grasser: "Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129513

6.		A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4. https://doi.org/10.1109/IIRW49815.2020.9312864

5.		J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser: "Similarities and Differences of BTI in SiC and Si Power MOSFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-03-29 - 2020-04-02; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129259

4.		C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993446

3.		G. Pobegen, M. Nelhiebel, T. Grasser: "Detrimental impact of hydrogen passivation on NBTI and HC degradation"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6.

2.		P. Lagger, A. Schiffmann, G. Pobegen, D. Pogany, C. Ostermaier: "New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTS"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemüde, Deutschland; 2013-05-26 - 2013-05-29; in: "WOCSDICE 2013", (2013), 161 - 162.

1.		G. Pobegen, M. Nelhiebel, T. Grasser: "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59.

Doctor's Theses (authored and supervised)

1.		G. Pobegen: "Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling"; Supervisor, Reviewer: T. Grasser, P. Hadley; Institut für Mikroelektronik, 2013; oral examination: 2013-12-05.

Diploma and Master Theses (authored and supervised)

5.		C. Ostermaier, P. Lagger, M. Reiner, C Koller, G. Pobegen, D. Pogany: "Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defects"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 2018-06-11 - 2018-06-14.

4.		C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany: "Review of bias-temperature instabilities at the III-N/dielectric interface"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28.

3.		C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany: "Transient capacitance analysis of thin carbon doped GaN layers"; Talk: Conference of Nitride Semiconductors (ICNS), Strassbourg, Frankreich; 2017-07-24 - 2017-07-28.

2.		C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany: "Leakage and voltage blocking behavior of carbon-doped GaN buffer layers"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Las Palmas de Gran Canaria, Spanien; 2017-05-22 - 2017-05-24.

1.		C. Ostermaier, P. Lagger, M. Reiner, G. Pobegen, D. Pogany: "Is PBTI at the dielectric/III‐N interface limited by interface traps?"; Talk: WOCSEMMAD, San Antonio, TX, USA; 2014-02-16 - 2014-02-17.