Publications Gregor Pobegen
23 records
| 14. | C Koller, G. Pobegen, C. Ostermaier, G. Hecke, R. Neumann, M. Holzbauer, G. Strasser, D. Pogany: "Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaN"; Physica Status Solidi B - Basic Solid State Physics, 256, (2019), 1800527-1 - 1800527-8 doi:10.1002/pssb.201800527. BibTeX |
| 13. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning"; Materials Science Forum, 924, (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671. BibTeX |
| 12. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique"; IEEE Transactions on Electron Devices, 25, (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283. BibTeX |
| 11. | C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany: "The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers"; Applied Physics Letters, 111, (2017), 0321061 - 0321065 doi:10.1063/1.4993571. BibTeX |
| 10. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique"; Materials Science Forum, 897, (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143. BibTeX |
| 9. | R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX |
| 8. | G. Rescher, G. Pobegen, T. Grasser: "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress"; Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481. BibTeX |
| 7. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "Characterization of charge trapping phenomena at III-N/dielectric interfaces"; Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX |
| 6. | G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser: "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs"; Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959. BibTeX |
| 5. | P. Lagger, A. Schiffmann, G. Pobegen, D. Pogany, C. Ostermaier: "Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs"; IEEE Electron Device Letters, 34, (2013), 1112 - 1114. BibTeX |
| 4. | G. Pobegen, T. Grasser: "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps"; Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757. BibTeX |
| 3. | G. Pobegen, T. Grasser: "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale"; IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816. BibTeX |
| 2. | G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser: "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures"; IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015. BibTeX |
| 1. | G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser: "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation"; IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX |
| 3. | P. Lagger, A. Schiffmann, G. Pobegen, D. Pogany, C. Ostermaier: "New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTS"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemüde, Deutschland; 2013-05-26 - 2013-05-29; in "WOCSDICE 2013", (2013), 161 - 162. BibTeX |
| 2. | G. Pobegen, M. Nelhiebel, T. Grasser: "Detrimental impact of hydrogen passivation on NBTI and HC degradation"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 1. | G. Pobegen, M. Nelhiebel, T. Grasser: "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59. BibTeX |
| 5. | C. Ostermaier, P. Lagger, M. Reiner, C Koller, G. Pobegen, D. Pogany: "Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defects"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 2018-06-11 - 2018-06-14; . BibTeX |
| 4. | C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany: "Review of bias-temperature instabilities at the III-N/dielectric interface"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28; . BibTeX |
| 3. | C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany: "Transient capacitance analysis of thin carbon doped GaN layers"; Talk: Conference of Nitride Semiconductors (ICNS), Strassbourg, Frankreich; 2017-07-24 - 2017-07-28; . BibTeX |
| 2. | C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany: "Leakage and voltage blocking behavior of carbon-doped GaN buffer layers"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Las Palmas de Gran Canaria, Spanien; 2017-05-22 - 2017-05-24; . BibTeX |
| 1. | C. Ostermaier, P. Lagger, M. Reiner, G. Pobegen, D. Pogany: "Is PBTI at the dielectric/III‐N interface limited by interface traps?"; Talk: WOCSEMMAD, San Antonio, TX, USA; 2014-02-16 - 2014-02-17; . BibTeX |
| 1. | G. Pobegen: "Degradation of electrical parameters of power semiconductor devices - process influences and modeling"; Reviewer: T. Grasser, P. Hadley; E360, 2013, oral examination: 2013-12-05. BibTeX |