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Publications Mahdi Pourfath

167 records

Books and Editorships

Publications in Scientific Journals

73.   Hamidi, H., Shojaei, F., Pourfath, M., Vaez zadeh, M. (2024).
Adsorption Behavior of Some Green Corrosion Inhibitors on Fe (110) Surface: The Critical Role of D-π Interactions in Binding Strength.
Applied Surface Science, 655, Article 159425. https://doi.org/10.1016/j.apsusc.2024.159425 (reposiTUm)

72.   Soleimani, M., Pourfath, M. (2023).
A Comprehensive Investigation of the Plasmonic-Photocatalytic Properties of Gold Nanoparticles for CO₂ Conversion to Chemicals.
Nanoscale, 15(15), 7051–7067. https://doi.org/10.1039/d3nr00566f (reposiTUm)

71.   Lashani Zand, A., Niksirat, A., Sanaee, Z., Pourfath, M. (2023).
Comprehensive Study of Lithium Diffusion in Si/C-Layer and Si/C₃n₄ Composites in a Faceted Crystalline Silicon Anode for Fast-Charging Lithium-Ion Batteries.
ACS Omega, 8(47), 44698–44707. https://doi.org/10.1021/acsomega.3c05523 (reposiTUm)

70.   Akhound, M. A., Soleimani, M., Pourfath, M. (2023).
Controllable Gas Adsorption via Inter-Coupled Ferroelectricity in In₂Se₃ Monolayer.
Materials Today Chemistry, 31, 101626. https://doi.org/10.1016/j.mtchem.2023.101626 (reposiTUm)

69.   HosseinpourRokni, M., Naderi, R., Soleimani, M., Kowsari, E., Pourfath, M. (2023).
Indirect Interactions Between the Ionic Liquid and Cu Surface in 0.5 M HCl: A Novel Mechanism Explaining Cathodic Corrosion Inhibition.
Corrosion Science, 216, Article 111100. https://doi.org/10.1016/j.corsci.2023.111100 (reposiTUm)

68.   Dehdast, M., Neek-Amal, M., Stampfl, C., Pourfath, M. (2023).
Strain Engineering of Hyperbolic Plasmons in Monolayer Carbon Phosphide: A First-Principles Study.
Nanoscale, 15(5), 2234–2247. https://doi.org/10.1039/d2nr06439a (reposiTUm)

67.   Shayanfar, R., Alidoosti, M., Nasr Esfahani, D., Pourfath, M. (2023).
The Carrier Mobility and Superconducting Properties of Monolayer Oxygen-Terminated Functionalized MXene Ti₂CO₂.
Nanoscale, 15(46), 18806–18817. https://doi.org/10.1039/d3nr03981a (reposiTUm)

66.   Shobeyrian, F., Shojaei, F., Soleimani, M., Pourfath, M. (2023).
Two-Dimensional Cr₂X₂Y₆ (X = Si, Ge; Y = S, Se, Te) Family With Potential Application in Photocatalysis.
Applied Surface Science, 630, 157319. https://doi.org/10.1016/j.apsusc.2023.157319 (reposiTUm)

65.   Abdolhosseini, S., Boroun, M., Pourfath, M. (2021).
Ab Initio Analysis of Periodic Self-Assembly Phases of Borophene as Anode Material for Na-Ion Batteries.
JOURNAL OF PHYSICAL CHEMISTRY C, 125(10), 5436–5446. https://doi.org/10.1021/acs.jpcc.0c09993 (reposiTUm)

64.   Ansaripour, I., Pourfath, M. (2021).
Charge-Induced Two-Step Structural Phase Transition in the MoTe₂–WSeTe Hetero-Bilayer.
JOURNAL OF PHYSICAL CHEMISTRY C, 125(27), 15000–15011. https://doi.org/10.1021/acs.jpcc.1c03138 (reposiTUm)

63.   Dehdast, M., Valiollahi, Z., Neek-Amal, M., Van Duppen, B., Peeters, F. M., Pourfath, M. (2021).
Tunable Natural Terahertz and Mid-Infrared Hyperbolic Plasmons in Carbon Phosphide.
Carbon, 178, 625–631. https://doi.org/10.1016/j.carbon.2021.03.040 (reposiTUm)

62.   HosseinpourRokni, M., Naderi, R., Soleimani, M., Jannat, A. R., Pourfath, M., Saybani, M. (2021).
Using Plant Extracts to Modify Al Electrochemical Behavior Under Corroding and Functioning Conditions in the Air Battery With Alkaline-Ethylene Glycol Electrolyte.
Journal of Industrial and Engineering Chemistry, 102, 327–342. https://doi.org/10.1016/j.jiec.2021.07.017 (reposiTUm)

61.   Ghamari, S., Dehdast, M., Habibiyan, H., Pourfath, M., Ghafoorifard, H. (2020).
Dielectrophoretic Borophene Tweezer: Sub-10 mV Nano-Particle Trapping.
Applied Surface Science, 527, 146859. https://doi.org/10.1016/j.apsusc.2020.146859 (reposiTUm)

60.   Soleimani, M., Pourfath, M. (2020).
Ferroelectricity and Phase Transitions in In₂Se₃ Van Der Waals Material.
Nanoscale, 12(44), 22688–22697. https://doi.org/10.1039/d0nr04096g (reposiTUm)

59.   Honari, N., Tabatabaei, S. M., Pourfath, M., Fathipour, M. (2020).
Semiconducting Phase and Anisotropic Properties in Borophene via Chemical Surface Functionalization.
JOURNAL OF PHYSICAL CHEMISTRY C, 124(10), 5807–5816. https://doi.org/10.1021/acs.jpcc.9b06614 (reposiTUm)

58.   Boroun, M., Abdolhosseini, S., Pourfath, M. (2019).
Separated and Intermixed Phases of Borophene as Anode Material for Lithium-Ion Batteries.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(24), Article 245501. https://doi.org/10.1088/1361-6463/ab1244 (reposiTUm)

57.   Khakbaz, P., Moshayedi, M., Hajian, S., Soleimani, M., Narakathu, B. B., Bazuin, B., Pourfath, M., Atashbar, M. (2019).
Titanium Carbide MXene as NH₃ Sensor: Realistic First-Principles Study.
JOURNAL OF PHYSICAL CHEMISTRY C, 123(49), 29794–29803. https://doi.org/10.1021/acs.jpcc.9b09823 (reposiTUm)

56.   Pakdel, S., Pourfath, M., Palacios, J. J. (2018).
An Implementation of Spin-Orbit Coupling for Band Structure Calculations With Gaussian Basis Sets: Two-Dimensional Topological Crystals of Sb and Bi.
Beilstein Journal of Nanotechnology, 9(1), 1015–1023. https://doi.org/10.3762/bjnano.9.94 (reposiTUm)

55.   Azar, N. S., Pourfath, M. (2016).
Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents.
Journal of Physical Chemistry C, 120(30), 16804–16814. https://doi.org/10.1021/acs.jpcc.6b05318 (reposiTUm)

54.   Zeraati, M., Vaez Allaei, S. M., Abdolhosseini Sarsari, I., Pourfath, M., Donadio, D. (2016).
Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study.
Physical Review B, 93(085424). https://doi.org/10.1103/physrevb.93.085424 (reposiTUm)

53.   Chaghazardi, Z., Touski, S. B., Pourfath, M., Faez, R. (2016).
Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness.
Journal of Applied Physics, 120(5), 053904. https://doi.org/10.1063/1.4960354 (reposiTUm)

52.   Nazemi, S., Pourfath, M., Soleimani, E. A., Kosina, H. (2016).
The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study.
Journal of Applied Physics, 119(14), 144302. https://doi.org/10.1063/1.4945392 (reposiTUm)

51.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2016).
The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach.
Journal of Electronic Materials, 45(3), 1584–1588. https://doi.org/10.1007/s11664-015-4124-7 (reposiTUm)

50.   Azar, N. S., Pourfath, M. (2015).
A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites.
IEEE Transactions on Electron Devices, 62(5), 1584–1589. https://doi.org/10.1109/ted.2015.2411992 (reposiTUm)

49.   Asad, M., Salimian, S., Sheikhi, M. H., Pourfath, M. (2015).
Flexible Phototransistors Based on Graphene Nanoribbon Decorated With MoS₂ Nanoparticles.
Sensors and Actuators A: Physical, 232, 285–291. https://doi.org/10.1016/j.sna.2015.06.018 (reposiTUm)

48.   Asad, M., Sheikhi, M. H., Pourfath, M., Moradi, M. (2015).
High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs.
Sensors and Actuators B: Chemical, 210, 1–8. https://doi.org/10.1016/j.snb.2014.12.086 (reposiTUm)

47.   Karamitaheri, H., Pourfath, M., Kosina, H., Neophytou, N. (2015).
Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons.
Physical Review B, 91(165410). https://doi.org/10.1103/physrevb.91.165410 (reposiTUm)

46.   Elahi, M., Khaliji, K., Tabatabaei, S. M., Pourfath, M., Asgari, R. (2015).
Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain.
Physical Review B, 91(115412). https://doi.org/10.1103/physrevb.91.115412 (reposiTUm)

45.   Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2015).
Numerical Study of Graphene Superlattice-Based Photodetectors.
IEEE Transactions on Electron Devices, 62(2), 593–600. https://doi.org/10.1109/ted.2014.2383354 (reposiTUm)

44.   Nazemi, S., Pourfath, M., Soleimani, E. A., Kosina, H. (2015).
On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals.
Journal of Applied Physics, 118(20), 205303. https://doi.org/10.1063/1.4936310 (reposiTUm)

43.   Moradinasab, M., Pourfath, M., Kosina, H. (2015).
Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers.
IEEE Journal of Quantum Electronics, 51(1), 1–7. https://doi.org/10.1109/jqe.2014.2373171 (reposiTUm)

42.   Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015).
Strain Induced Mobility Modulation in Single-Layer MoS₂.
Journal of Physics D: Applied Physics, 48(37), 375104. https://doi.org/10.1088/0022-3727/48/37/375104 (reposiTUm)

41.   Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015).
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se). IEEE Transactions on Electron Devices, 62(10), 3192–3198. https://doi.org/10.1109/ted.2015.2461617 (reposiTUm)


40.   Thesberg, M., Pourfath, M., Kosina, H., Neophytou, N. (2015).
The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices.
Journal of Applied Physics, 118(22), 224301. https://doi.org/10.1063/1.4936839 (reposiTUm)

39.   Ghobadi, N., Pourfath, M. (2015).
Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing.
IEEE Electron Device Letters, 36(3), 280–282. https://doi.org/10.1109/led.2014.2388452 (reposiTUm)

38.   Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015).
Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing Applications.
Applied Physics Letters, 107(25), 253503. https://doi.org/10.1063/1.4937438 (reposiTUm)

37.   Ghobadi, N., Pourfath, M. (2014).
A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures.
IEEE Transactions on Electron Devices, 61(1), 186–192. https://doi.org/10.1109/ted.2013.2291788 (reposiTUm)

36.   Djavid, N., Khaliji, K., Tabatabaei, S. M., Pourfath, M. (2014).
A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 61(1), 23–29. https://doi.org/10.1109/ted.2013.2290773 (reposiTUm)

35.   Gholipour, M., Masoumi, N., Chen, Y. C., Chen, D., Pourfath, M. (2014).
Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design.
IEEE Transactions on Electron Devices, 61(12), 4000–4006. https://doi.org/10.1109/ted.2014.2362774 (reposiTUm)

34.   Asad, M., Fathipour, M., Sheikhi, M. H., Pourfath, M. (2014).
High-Performance Infrared Photo-Transistor Based on SWCNT Decorated With PbS Nanoparticles.
Sensors and Actuators A: Physical, 220, 213–220. https://doi.org/10.1016/j.sna.2014.10.017 (reposiTUm)

33.   Ghobadi, N., Pourfath, M. (2014).
On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors.
Journal of Applied Physics, 116(18), 184506. https://doi.org/10.1063/1.4901584 (reposiTUm)

32.   Mojibpour, A., Pourfath, M., Kosina, H. (2014).
Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers.
Optics Express, 22(17), 20607. https://doi.org/10.1364/oe.22.020607 (reposiTUm)

31.   Kahnoj, S. S., Touski, S. B., Pourfath, M. (2014).
The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons.
Applied Physics Letters, 105(10), 103502. https://doi.org/10.1063/1.4894859 (reposiTUm)

30.   Mohammad Tabatabaei, S., Noei, M., Khaliji, K., Pourfath, M., Fathipour, M. (2013).
A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor.
Journal of Applied Physics, 113(16), 163708. https://doi.org/10.1063/1.4803032 (reposiTUm)

29.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2013).
Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 60(7), 2142–2147. https://doi.org/10.1109/ted.2013.2262049 (reposiTUm)

28.   Babaee Touski, S., Pourfath, M. (2013).
Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons.
Applied Physics Letters, 103(14), 143506. https://doi.org/10.1063/1.4824362 (reposiTUm)

27.   Khaliji, K., Noei, M., Tabatabaei, S. M., Pourfath, M., Fathipour, M., Abdi, Y. (2013).
Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain.
IEEE Transactions on Electron Devices, 60(8), 2464–2470. https://doi.org/10.1109/ted.2013.2266300 (reposiTUm)

26.   Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2012).
A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 59(2), 433–440. https://doi.org/10.1109/ted.2011.2173690 (reposiTUm)

25.   Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons.
Journal of Applied Physics, 111(7), 074318. https://doi.org/10.1063/1.3702429 (reposiTUm)

24.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness.
IEEE Transactions on Electron Devices, 59(12), 3527–3532. https://doi.org/10.1109/ted.2012.2218817 (reposiTUm)

23.   Karamitaheri, H., Neophytou, N., Pourfath, M., Faez, R., Kosina, H. (2012).
Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons.
Journal of Applied Physics, 111(5), 054501. https://doi.org/10.1063/1.3688034 (reposiTUm)

22.   Nematian, H., Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices.
Journal of Applied Physics, 111(9), 093512. https://doi.org/10.1063/1.4710988 (reposiTUm)

21.   Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H. (2012).
Study of Thermal Properties of Graphene-Based Structures Using the Force Constant Method.
Journal of Computational Electronics, 11(1), 14–21. https://doi.org/10.1007/s10825-011-0380-9 (reposiTUm)

20.   Goharrizi, A. Y., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2011).
An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 58(11), 3725–3735. https://doi.org/10.1109/ted.2011.2163719 (reposiTUm)

19.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices.
Journal of Applied Physics, 110(5), 054506. https://doi.org/10.1063/1.3629990 (reposiTUm)

18.   Karamitaheri, H., Pourfath, M., Pazoki, M., Faez, R., Kosina, H. (2011).
Graphene-Based Antidots for Thermoelectric Applications.
Journal of The Electrochemical Society, 158(12), K213. https://doi.org/10.1149/2.025112jes (reposiTUm)

17.   Manavizadeh, N., Raissi, F., Soleimani, E. A., Pourfath, M., Selberherr, S. (2011).
Performance Assessment of Nanoscale Field Effect Diodes.
IEEE Transactions on Electron Devices, 58(8), 2378–2384. https://doi.org/10.1109/ted.2011.2152844 (reposiTUm)

16.   Pourfath, M., Kosina, H. (2009).
Computational Study of Carbon-Based Electronics.
Journal of Computational Electronics, 8(3–4), 427–440. https://doi.org/10.1007/s10825-009-0285-z (reposiTUm)

15.   Pourfath, M., Kosina, H. (2008).
Formalism Application of the Non-Equilibrium Green’s Function for the Numerical Analysis of Carbon Nanotube Fets.
Journal of Computational and Theoretical Nanoscience, 5(6), 1128–1137. https://doi.org/10.1166/jctn.2008.011 (reposiTUm)

14.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Numerical Study of Quantum Transport in Carbon Nanotube Transistors.
Mathematics and Computers in Simulation, 79(4), 1051–1059. https://doi.org/10.1016/j.matcom.2007.09.004 (reposiTUm)

13.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
Journal of Physics: Conference Series, 109, 012029. https://doi.org/10.1088/1742-6596/109/1/012029 (reposiTUm)

12.   Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S. (2007).
A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications.
Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 (reposiTUm)

11.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Dissipative Transport in CNTFETs.
Journal of Computational Electronics, 6(1–3), 321–324. https://doi.org/10.1007/s10825-006-0113-7 (reposiTUm)

10.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Geometry Optimization for Carbon Nanotube Transistors.
Solid-State Electronics, 51(11–12), 1565–1571. https://doi.org/10.1016/j.sse.2007.09.021 (reposiTUm)

9.   Pourfath, M., Kosina, H. (2007).
The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors.
Nanotechnology, 18(42), 424036. https://doi.org/10.1088/0957-4484/18/42/424036 (reposiTUm)

8.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Tunneling CNTFETs.
Journal of Computational Electronics, 6(1–3), 243–246. https://doi.org/10.1007/s10825-006-0099-1 (reposiTUm)

7.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
Journal of Computational Electronics, 5(2–3), 155–159. https://doi.org/10.1007/s10825-006-8836-z (reposiTUm)

6.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Rigorous Modeling of Carbon Nanotube Transistors.
Journal of Physics: Conference Series, 38, 29–32. https://doi.org/10.1088/1742-6596/38/1/008 (reposiTUm)

5.   Castro, L. C., John, D. L., Pulfrey, D. L., Pourfath, M., Gehring, A., Kosina, H. (2005).
Method for Predicting F/Sub T/ for Carbon Nanotube FETs.
IEEE Transactions on Nanotechnology, 4(6), 699–704. https://doi.org/10.1109/tnano.2005.858603 (reposiTUm)

4.   Pourfath, M., Ungersboeck, E., Gehring, A., Kosina, H., Selberherr, S., PARK, W.-J., Cheong, B.-H. (2005).
Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors.
Journal of Computational Electronics, 4(1–2), 75–78. https://doi.org/10.1007/s10825-005-7111-z (reposiTUm)

3.   Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B. H., Park, W. J., Kosina, H., Selberherr, S. (2005).
Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors.
Microelectronic Engineering, 81(2–4), 428–433. https://doi.org/10.1016/j.mee.2005.03.043 (reposiTUm)

2.   Ungersboeck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.-J., Selberherr, S. (2005).
Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors.
IEEE Transactions on Nanotechnology, 4(5), 533–538. https://doi.org/10.1109/tnano.2005.851402 (reposiTUm)

1.   Pourfath, M., Gehring, A., Ungersboeck, E., Kosina, H., Selberherr, S., Cheong, B. H., Park, W. J. (2005).
Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors.
Journal of Applied Physics, 97(10), 106103. https://doi.org/10.1063/1.1897491 (reposiTUm)

Contributions to Books

2.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices.
In Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (Eds.), ECS Transactions (pp. 185–192). ECS Transactions. https://doi.org/10.1149/1.3569910 (reposiTUm)

1.   Pourfath, M., Kosina, H. (2011).
Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors.
In H. Nalwa (Ed.), Encyclopedia of Nanoscience and Nanotechnology (pp. 541–581). American Scientific Publishers. (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

77.   Hajian, S., Khakbaz, P., Moshayedi, M., Maddipatla, D., Narakathu, B., Turkani, V., Bazuin, B., Pourfath, M., Atashbar, M. (2018).
Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti₃C₂T͓x MXene as Ammonia Sensor: A First-Principles Study.
In 2018 IEEE SENSORS (pp. 1–4), New Delhi, India. https://doi.org/10.1109/ICSENS.2018.8589699 (reposiTUm)

76.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 301–308), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_33 (reposiTUm)

75.   Kefayati, A., Pourfath, M., Kosina, H. (2015).
A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 7–8), Urbana-Champaign, IL, USA. (reposiTUm)

74.   Neophytou, N., Thesberg, M., Pourfath, M., Kosina, H. (2015).
Calculations of the Thermopower in Materials With Nano-Inclusions Using Quantum Mechanical Simulations.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

73.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations.
In Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT) (p. 1), Dresden, Germany. (reposiTUm)

72.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

71.   Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015).
Strain Engineering of Single-Layer MoS2.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324777 (reposiTUm)

70.   Nazemi, S., Soleimani, E., Pourfath, M., Kosina, H. (2015).
The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 333–336), Washington, DC, United States. (reposiTUm)

69.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Thermoelectric Efficiency Improvements Through Grain Shape Optimization: A Non-Equilibrium Green's Function Study.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 70), Sozopol, Bulgaria. (reposiTUm)

68.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF.
In Proceedings of the International Workshop on Computational Electronics (IWCE) (p. 4), Urbana-Champaign, IL, USA. (reposiTUm)

67.   Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2014).
A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors.
In Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 1–2), Vancouver, Canada. (reposiTUm)

66.   Moradinasab, M., Pourfath, M., Kosina, H. (2014).
An Instability Study in Terahertz Quantum Cascade Lasers.
In Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN) (p. 10), Savannah, GA, USA. (reposiTUm)

65.   Moradinasab, M., Pourfath, M., Kosina, H. (2014).
Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers.
In International Quantum Cascade Lasers School, Workshop 2014 (pp. 182–183), Monte Verita, Ascona, Switzerland. (reposiTUm)

64.   Touski, S., Chaghazardi, Z., Pourfath, M., Moradinasab, M., Faez, R., Kosina, H. (2014).
Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 101–102), Urbana-Champaign, IL, USA. (reposiTUm)

63.   Touski, S., Pourfath, M., Kosina, H. (2013).
Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 108–109), Urbana-Champaign, IL, USA. (reposiTUm)

62.   Moradinasab, M., Pourfath, M., Kosina, H. (2013).
Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects.
In Book of Abstracts (p. 250), Delft, Netherlands. (reposiTUm)

61.   Nematian, H., Moradinasab, M., Noei, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 217–218), Urbana-Champaign, IL, USA. (reposiTUm)

60.   Moradinasab, M., Nematian, H., Noei, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 249–250), Urbana-Champaign, IL, USA. (reposiTUm)

59.   Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H. (2012).
Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 77–78), Urbana-Champaign, IL, USA. (reposiTUm)

58.   Karamitaheri, H., Pourfath, M., Kosina, H. (2012).
Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor.
In Book of Abstracts (p. 1), Delft, Netherlands. (reposiTUm)

57.   Moradinasab, M., Karamitaheri, H., Pourfath, M., Kosina, H. (2012).
On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors.
In Book of Abstracts (p. 1), Delft, Netherlands. (reposiTUm)

56.   Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors.
In ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

55.   Karamitaheri, H., Pourfath, M., Neophytou, N., Kosina, H. (2012).
Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor.
In ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

54.   Manavizadeh, N., Pourfath, M., Raissi, F., Asl-Soleimani, E. (2011).
A Comprehensive Study of Nanoscale Field Effect Diodes.
In 2011 12th Intl. Conf. on Thermal, Mechanical, Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (pp. 1/4–4/4), Linz, Austria. https://doi.org/10.1109/esime.2011.5765817 (reposiTUm)

53.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of ZGNR-Based Transistors.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

52.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices.
In 219th ECS Meeting (p. 1), Montreal, Canada. (reposiTUm)

51.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H. (2011).
Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons.
In 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Austria. https://doi.org/10.1109/esime.2011.5765816 (reposiTUm)

50.   Karamitaheri, H., Pourfath, M., Neophytou, N., Pazoki, M., Kosina, H. (2011).
First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications.
In Proceedings of the 2nd CARBOMAT Workshop (pp. 19–22), Catania, Italy. (reposiTUm)

49.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications.
In 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Austria. https://doi.org/10.1109/esime.2011.5765811 (reposiTUm)

48.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Transport Gap Engineering in Zigzag Graphene Nanoribbons.
In Poster Abstracts Book (TNT 2011) (p. 2), Segovia, Austria. (reposiTUm)

47.   Pourfath, M., Sverdlov, V., Selberherr, S. (2010).
Modeling Demands for Nanoscale Devices.
In Proceedings of the Device Research Conference (DRC) (pp. 211–214), Santa Barbara , California, Austria. (reposiTUm)

46.   Pourfath, M., Yazdanpanah, A., Fathipour, M., Kosina, H. (2010).
On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677936 (reposiTUm)

45.   Pourfath, M., Yazdanpanah Goharrizi, A., Kosina, H. (2010).
The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons.
In Abstract Book (p. 419), Berlin. (reposiTUm)

44.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2010).
Thermal Properties of Graphene Antidots.
In Abstract Book of the Nanoelectronics Days 2010 (p. 102), Aachen. (reposiTUm)

43.   Pourfath, M., Sverdlov, V., Selberherr, S. (2010).
Transport Modeling for Nanoscale Semiconductor Devices.
In Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (pp. 1737–1740), Peking, Austria. (reposiTUm)

42.   Pourfath, M., Kosina, H. (2009).
Carbon Based Electronics: A Computational Study.
In Quantum Systems and Devices: Analysis, Simulations, Applications (p. 18), Beijing. (reposiTUm)

41.   Pourfath, M., Selberherr, S. (2009).
Carbon-Based Electronics: A Computational Study.
In Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD) (p. 6), New Dehli. (reposiTUm)

40.   Pourfath, M., Selberherr, S. (2009).
Modeling Optical Sensors Based on Carbon Nanotubes.
In Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT) (pp. 1381–1384), New Delhi. (reposiTUm)

39.   Pourfath, M., Baumgartner, O., Kosina, H., Selberherr, S. (2009).
Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors.
In Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 13–14), Singapore. (reposiTUm)

38.   Pourfath, M., Kosina, H., Selberherr, S. (2009).
Theoretical Study of Graphene Nanoribbon Photo-Detectors.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (pp. 178–179), Kaanapali. (reposiTUm)

37.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2008).
A Numerical Study of Graphene Nano-Ribbon Based Resonant Tunneling Diodes.
In International Symposium on Graphene Devices: Technology, Physics, and Modeling (pp. 66–67), Japan. (reposiTUm)

36.   Pourfath, M., Selberherr, S. (2008).
Analysis of Carbon Nanotube Photo-Detectors.
In Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW) (p. TU-06), Kona. (reposiTUm)

35.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Current Transport in Carbon Nanotube Transistors.
In The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology (pp. 361–364), Peking, Austria. (reposiTUm)

34.   Pourfath, M., Selberherr, S. (2008).
Modeling Current Transport in Carbon Nanotube Transistors.
In IEEE International Conference on Electron Devices and Solid-State Circuit 2008 (p. 6), Hong Kong, Austria. (reposiTUm)

33.   Pourfath, M., Kosina, H. (2008).
Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648242 (reposiTUm)

32.   Pourfath, M., Sverdlov, V., Kosina, H. (2008).
On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors.
In 1st Fone Conference Nanoelectronics 2008 (p. 41), Taormina, Italy. (reposiTUm)

31.   Pourfath, M., Baumgartner, O., Kosina, H. (2008).
On the Non-Locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors.
In 2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore. https://doi.org/10.1109/nusod.2008.4668261 (reposiTUm)

30.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 214–217), Montreux, Austria. (reposiTUm)

29.   Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., Kosina, H. (2007).
Adaptive Energy Integration of Non-Equilibrium Green's Functions.
In NSTI Nanotech Proceedings (pp. 145–148), Anaheim, Austria. (reposiTUm)

28.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Carbon Nanotube Based Transistors: A Computational Study.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730253 (reposiTUm)

27.   Karner, M., Baumgartner, O., Pourfath, M., Vasicek, M., Kosina, H. (2007).
Investigation of a MOSCAP Using NEGF.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

26.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
In International Symposium on Advanced Nanodevices and Nanotechnology (pp. 37–38), Waikoloa, Hawaii. (reposiTUm)

25.   Pourfath, M., Kosina, H. (2007).
The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 309–312), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_74 (reposiTUm)

24.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 239–242), Montreux, Austria. (reposiTUm)

23.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346739 (reposiTUm)

22.  M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 345 - 346.

21.   Pourfath, M., Kosina, H. (2006).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 578–585), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_66 (reposiTUm)

20.   Pourfath, M., Kosina, H. (2006).
On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors.
In Proceedings Trends in Nanotechnology (p. 2), Segovia, Austria. (reposiTUm)

19.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 5), Tehran. (reposiTUm)

18.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimal Design for Carbon Nanotube Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 210–213), Montreux, Austria. (reposiTUm)

17.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimizing the Performance of Carbon Nanotube Transistors.
In 2006 Sixth IEEE Conference on Nanotechnology, Nagoya, Austria. https://doi.org/10.1109/nano.2006.247702 (reposiTUm)

16.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2006).
The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282873 (reposiTUm)

15.  M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling-CNTFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 291 - 292.

14.  M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 255 - 256.

13.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 95–96), Pisa, Austria. (reposiTUm)

12.   Pourfath, M., Park, W., Kosina, H., Selberherr, S. (2005).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 50–51), Sozopol, Bulgaria. (reposiTUm)

11.   Pourfath, M., Kosina, H., Cheong, B., Park, W. (2005).
Geometry-Dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201480 (reposiTUm)

10.   Pourfath, M., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
High Performance Carbon Nanotube Field Effect Transistor With the Potential for Tera Level Integration.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference (pp. 95–98), Bologna, Austria. (reposiTUm)

9.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 541–544), Montreux, Austria. (reposiTUm)

8.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
Rigorous Modeling of Carbon Nanotube Field Effect Transistors.
In Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices (pp. 155–156), Maui. (reposiTUm)

7.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors.
In 5th IEEE Conference on Nanotechnology, 2005., Nagoya, Austria. https://doi.org/10.1109/nano.2005.1500641 (reposiTUm)

6.   Pourfath, M., Gehring, A., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration.
In NSTI Nanotech Technical Proceedings (pp. 128–131), Anaheim, Austria. (reposiTUm)

5.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; 429 - 432.

4.  M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 237 - 238. https://doi.org/10.1109/IWCE.2004.1407414

3.  E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120.

2.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

1.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
"Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 149 - 152. https://doi.org/10.1007/978-3-7091-0624-2_35

Talks and Poster Presentations (without Proceedings-Entry)

3.   Thesberg, M., Neophytou, N., Pourfath, M., Kosina, H. (2016).
Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials.
Energy-Materials-Nanotechnology Meeting on Thermoelectric Materials (EMN), Orlando, USA, Non-EU. (reposiTUm)

2.   Moradinasab, M., Pourfath, M., Baumgartner, O., Kosina, H. (2013).
Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers.
The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA, Non-EU. (reposiTUm)

1.   Pourfath, M. (2011).
Quantum Transport in Graphene-Based Devices: A Computational Study.
17th Annual IASBS Meeting on Condensed Matter Physics, Zanjan, Iran, Non-EU. (reposiTUm)

Habilitation Theses

2.  M. Pourfath:
"Modeling Nanoelectric Devices";
TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2016.

1.   Pourfath, M. (2015).
Modeling Nanoelectronic Devices
 Technische Universität Wien. (reposiTUm)

Doctor's Theses (authored and supervised)

2.  M. Pourfath:
"Numeric Study of Quantum Transport in Carbon Nanotube-Based Transistors";
Supervisor, Reviewer: H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007; oral examination: 2007-07-03.

1.   Pourfath, M. (2007).
Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors
 Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-14427 (reposiTUm)

Patents

2.  W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
"Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
Patent: United States, No. US 2008/0121996 A1 ; submitted: 2005-09-13, granted: 2008-05-29.

1.  W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
"Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
Patent: Europe, No. EP 1 655 791 A1 ; submitted: 2005-09-09, granted: 2006-05-10.

Scientific Reports

5.   Ceric, H., Grasser, T., Orio, R., Pourfath, M., Vasicek, M., Selberherr, S. (2008).
VISTA Status Report July 2008.
(reposiTUm)

4.   Pourfath, M., Kosina, H. (2007).
Simulation of Carbon Nanotube Transistors.
(reposiTUm)

3.   Ceric, H., Dhar, S., Karlowatz, G., Li, L., Pourfath, M., Selberherr, S. (2007).
VISTA Status Report June 2007.
(reposiTUm)

2.   Dhar, S., Li, L., Pourfath, M., Spevak, M., Sverdlov, V., Selberherr, S. (2006).
VISTA Status Report June 2006.
(reposiTUm)

1.   Gehring, A., Pourfath, M., Ungersböck, S. E., Wagner, S., Wessner, W., Selberherr, S. (2004).
VISTA Status Report December 2004.
(reposiTUm)