Publications Gerhard Rzepa

66 records

Publications in Scientific Journals

21.   Filipovic, L., Baumgartner, O., Klemenschits, X., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2023).
DTCO Flow for Air Spacer Generation and Its Impact on Power and Performance at N7.
Solid-State Electronics, 199, Article 108527. https://doi.org/10.1016/j.sse.2022.108527 (reposiTUm)

20.   Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

19.   Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

18.   Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020).
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities.
IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm)

17.   Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., Grasser, T. (2020).
Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors.
Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 (reposiTUm)

16.   Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory.
IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

15.   Wu, Z., Franco, J., Vandooren, A., Kaczer, B., Roussel, P., Rzepa, G., Grasser, T., Linten, D., Groeseneken, G. (2019).
Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration.
IEEE Transactions on Device and Materials Reliability, 19(2), 262–267. https://doi.org/10.1109/tdmr.2019.2906843 (reposiTUm)

14.   Giering, K.-U., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G., Vollertsen, R., Grasser, T., Jancke, R. (2019).
NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling.
IEEE Transactions on Electron Devices, 66(4), 1662–1668. https://doi.org/10.1109/ted.2019.2901907 (reposiTUm)

13.   Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L.-A., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2019).
On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI.
IEEE Transactions on Device and Materials Reliability, 19(2), 268–274. https://doi.org/10.1109/tdmr.2019.2913258 (reposiTUm)

12.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T. (2018).
A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability.
Microelectronics Reliability, 81, 186–194. https://doi.org/10.1016/j.microrel.2017.11.022 (reposiTUm)

11.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018).
A Physical Model for the Hysteresis in MoS2 Transistors.
IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

10.   Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018).
Comphy -- A Compact-Physics Framework for Unified Modeling of BTI.
Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm)

9.   Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., Grasser, T. (2018).
Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence.
Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 (reposiTUm)

8.   Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017).
Energetic Mapping of Oxide Traps in MoS₂ Field-Effect Transistors.
2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm)

7.   Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017).
Highly-Stable Black Phosphorus Field-Effect Transistors With Low Density of Oxide Traps.
Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm)

6.   Kaczer, B., Franco, J., Tyaginov, S., Jech, M., Rzepa, G., Grasser, T., O’Sullivan, B. J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., Horiguchi, N. (2017).
Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices.
Journal of Vacuum Science, Technology B, 35(1), 01A109. https://doi.org/10.1116/1.4972872 (reposiTUm)

5.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part I: Experimental.
IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm)

4.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part II: Theory.
IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm)

3.   Illarionov, Y. Y., Waltl, M., Rzepa, G., Kim, J.-S., Kim, S., Dodabalapur, A., Akinwande, D., Grasser, T. (2016).
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
ACS Nano, 10(10), 9543–9549. https://doi.org/10.1021/acsnano.6b04814 (reposiTUm)

2.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Goes, W., Grasser, T. (2016).
The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits.
Solid-State Electronics, 125, 52–62. https://doi.org/10.1016/j.sse.2016.07.010 (reposiTUm)

1.   Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016).
The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors.
2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

Contributions to Books

1.   Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., Grasser, T. (2017).
(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors.
In D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

39.   Filipovic, L., Baumgartner, O., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2022).
DTCO Flow for Air Spacer Generation and Its Impact on Power and Performance at N7.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 34–35), Granada, Spain. (reposiTUm)

38.   Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020).
Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm)

37.   Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020).
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128349 (reposiTUm)

36.   Grasser, T., Kaczer, B., O'Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M. (2020).
The Mysterious Bipolar Bias Temperature Stress From the Perspective of Gate-Sided Hydrogen Release.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129198 (reposiTUm)

35.   Wu, Z., Franco, J., Claes, D., Rzepa, G., Roussel, P., Collaert, N., Groeseneken, G., Linten, D., Grasser, T., Kaczer, B. (2019).
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720541 (reposiTUm)

34.   O'Sullivan, B., Ritzenthaler, R., Rzepa, G., Wu, Z., Litta, E., Richard, O., Conard, T., Machkaoutsan, V., Fazan, P., Kim, C., Franco, J., Kaczer, B., Grasser, T., Spessot, A., Linten, D., Horiguchi, N. (2019).
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720598 (reposiTUm)

33.   Scharlotta, J., Bersuker, G., Tyaginov, S., Young, C., Haase, G., Rzepa, G., Waltl, M., Chohan, T., Iyer, S., Kotov, A., Zambelli, C., Guarin, F., Puglisi, F., Ostermaier, C. (2019).
IIRW 2019 Discussion Group II: Reliability for Aerospace Applications.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989910 (reposiTUm)

32.   Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Claes, D., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2019).
Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes.
In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2019.8731237 (reposiTUm)

31.   Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S., Grasser, T., Waltl, M. (2019).
Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993446 (reposiTUm)

30.   Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Ragnarsson, L., Hellings, G., Brus, S., Cott, D., De Heyn, V., Groeseneken, G., Horiguchi, N., Ryckaert, J., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2018).
BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration.
In 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2018.8614559 (reposiTUm)

29.   Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018).
Border Trap Based Modeling of SiC Transistor Transfer Characteristics.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm)

28.   Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B. (2018).
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting From NBTI/PBTI Stress in nMOS/pMOS Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2A.2-1–2A.2-10), Waikoloa, HI, USA. (reposiTUm)

27.   Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2018).
On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727089 (reposiTUm)

26.   Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017).
Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs.
In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm)

25.   Chasin, A., Franco, J., Kaczer, B., Putcha, V., Weckx, P., Ritzenthaler, R., Mertens, H., Horiguchi, N., Linten, D., Rzepa, G. (2017).
BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 5C-4.1–5C-4.7), Waikoloa, HI, USA. (reposiTUm)

24.   Kaczer, B., Rzepa, G., Franco, J., Weckx, P., Chasin, A., Putcha, V., Bury, E., Simicic, M., Roussel, P., Hellings, G., Veloso, A., Matagne, P., Grasser, T., Linten, D. (2017).
Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2D-6.1–2D-6.7), Waikoloa, HI, USA. (reposiTUm)

23.   Franco, J., Putcha, V., Vais, A., Sioncke, S., Waldron, N., Zhou, D., Rzepa, G., Roussel, P., Groeseneken, G., Heyns, M., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2017).
Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility N-Channel MOSFETs (Invited).
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268347 (reposiTUm)

22.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

21.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017).
Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors.
In Meeting Abstracts (p. 2), Honolulu, Austria. (reposiTUm)

20.   Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B. (2017).
Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up After BTI Stress.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 6A-2.1–6A-2.6), Waikoloa, HI, USA. (reposiTUm)

19.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

18.   Illarionov, Y., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T. (2016).
A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs.
In 74#^{th }Device Research Conference Digest (pp. 89–90), Santa Barbara , California, Austria. (reposiTUm)

17.   Giering, K., Rott, G., Rzepa, G., Reisinger, H., Puppala, A., Reich, T., Gustin, W., Grasser, T., Jancke, R. (2016).
Analog-Circuit NBTI Degradation and Time-Dependent NBTI Variability: An Efficient Physics-Based Compact Model.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574540 (reposiTUm)

16.   Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T. (2016).
Complete Extraction of Defect Bands Responsible for Instabilities in N and pFinFETs.
In 2016 Symposium on VLSI Technology Digest of Technical Papers (pp. 208–209), Kyoto, Japan. (reposiTUm)

15.   Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016).
Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm)

14.   Kaczer, B., Amoroso, S., Hussin, R., Asenov, A., Franco, J., Weckx, P., Roussel, P., Rzepa, G., Grasser, T., Horiguchi, N. (2016).
On the Distribution of the FET Threshold Voltage Shifts Due to Individual Charged Gate Oxide Defects.
In Proceedings of the IEEE International Integrated Reliability Workshop (IIRW) (p. 3), South Lake Tahoe, CA, USA. (reposiTUm)

13.   Grasser, T., Waltl, M., Rzepa, G., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Reisinger, H., Kaczer, B. (2016).
The “permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574504 (reposiTUm)

12.   Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, C., Karner, H., Rzepa, G., Grasser, T. (2016).
Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations.
In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2016.7838516 (reposiTUm)

11.   Rzepa, G., Gös, W., Kaczer, B., Grasser, T. (2015).
Characterization and Modeling of Reliability Issues in Nanoscale Devices.
In Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015 (pp. 2445–2448), Rio de Janeiro, Brasilien. (reposiTUm)

10.   Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T. (2015).
Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2015.7437064 (reposiTUm)

9.   Demel, H., Stanojevic, Z., Karner, M., Rzepa, G., Grasser, T. (2015).
Expanding TCAD Simulations From Grid to Cloud.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292290 (reposiTUm)

8.   Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes.
In 2015 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2015.7409739 (reposiTUm)

7.   Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Grasser, T. (2015).
Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292279 (reposiTUm)

6.   Kaczer, B., Franco, J., Weckx, P., Roussel, P., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Kukner, H., Raghavan, P., Catthoor, F., Rzepa, G., Goes, W., Grasser, T. (2015).
The Defect-Centric Perspective of Device and Circuit Reliability &Amp;#x2014; From Individual Defects to Circuits.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324754 (reposiTUm)

5.   Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T. (2014).
Advanced Modeling of Charge Trapping: RTN, 1/F Noise, SILC, and BTI.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931567 (reposiTUm)

4.   Grasser, T., Rzepa, G., Waltl, M., Goes, W., Rott, K., Rott, G., Reisinger, H., Franco, J., Kaczer, B. (2014).
Characterization and Modeling of Charge Trapping: From Single Defects to Devices.
In 2014 IEEE International Conference on IC Design & Technology, Austin, TX, USA. https://doi.org/10.1109/icicdt.2014.6838620 (reposiTUm)

3.   Giering, K., Sohrmann, C., Rzepa, G., Heis, L., Grasser, T., Jancke, R. (2014).
NBTI Modeling in Analog Circuits and Its Application to Long-Term Aging Simulations.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049501 (reposiTUm)

2.   Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014).
On the Microscopic Structure of Hole Traps in pMOSFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

1.   Rzepa, G., Goes, W., Rott, G., Rott, K., Karner, M., Kernstock, C., Kaczer, B., Reisinger, H., Grasser, T. (2014).
Physical Modeling of NBTI: From Individual Defects to Devices.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931568 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

2.   Filipovic, L., Kampl, M., Knobloch, T., Rzepa, G., Weinbub, J. (2018).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik (Mit Virtual Reality).
Lange Nacht der Forschung 2018, Wien, Austria. (reposiTUm)

1.   Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017).
Reliability Perspective of 2D Electronics.
International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm)

Doctor's Theses (authored and supervised)

Diploma and Master Theses (authored and supervised)

2.   Knobloch, T. (2016).
Characterization and Physical Modeling of Degradation in MoS2 Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2016.39485 (reposiTUm)

1.   Rzepa, G. (2013).
Microscopic Modeling of NBTI in MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2013.22838 (reposiTUm)