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Publications Franz Schanovsky

46 records

Publications in Scientific Journals

8.   Stampfer, B., Schanovsky, F., Grasser, T., Waltl, M. (2020).
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.
Micromachines, 11(4). https://doi.org/10.3390/mi11040446 (reposiTUm)

7.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Kaczer, B. (2014).
NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark.
IEEE Transactions on Electron Devices, 61(11), 3586–3593. https://doi.org/10.1109/ted.2014.2353578 (reposiTUm)

6.   Schanovsky, F., Baumgartner, O., Sverdlov, V., Grasser, T. (2012).
A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures.
Journal of Computational Electronics, 11(3), 218–224. https://doi.org/10.1007/s10825-012-0403-1 (reposiTUm)

5.   Goes, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
Solid State Phenomena, 178–179, 473–482. https://doi.org/10.4028/www.scientific.net/ssp.178-179.473 (reposiTUm)

4.   Schanovsky, F., Gös, W., Grasser, T. (2011).
Multiphonon Hole Trapping From First Principles.
Journal of Vacuum Science, Technology B, 29(1), 01A201. https://doi.org/10.1116/1.3533269 (reposiTUm)

3.   Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011).
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps.
IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm)

2.   Schanovsky, F., Gös, W., Grasser, T. (2010).
An Advanced Description of Oxide Traps in MOS Transistors and Its Relation to DFT.
Journal of Computational Electronics, 9(3–4), 135–140. https://doi.org/10.1007/s10825-010-0323-x (reposiTUm)

1.   Sverdlov, V. A., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Mobility Modeling in Advanced MOSFETs With Ultra-Thin Silicon Body Under Stress.
Journal of Integrated Circuits and Systems, 4(2), 55–60. https://doi.org/10.29292/jics.v4i2.298 (reposiTUm)

Contributions to Books

3.   Goes, W., Schanovsky, F., Grasser, T. (2013).
Advanced Modeling of Oxide Defects.
In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 409–446). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_16 (reposiTUm)

2.   Schanovsky, F., Grasser, T. (2013).
On the Microscopic Limit of the RD Model.
In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 379–408). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_15 (reposiTUm)

1.   Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., Grasser, T. (2010).
(Invited) Charge Trapping and the Negative Bias Temperature Instability.
In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

30.   Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B. (2018).
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting From NBTI/PBTI Stress in nMOS/pMOS Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2A.2-1–2A.2-10), Waikoloa, HI, USA. (reposiTUm)

29.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

28.   Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, C., Karner, H., Rzepa, G., Grasser, T. (2016).
Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations.
In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2016.7838516 (reposiTUm)

27.   Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014).
On the Microscopic Structure of Hole Traps in pMOSFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

26.   Goes, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T. (2013).
(Invited) Multiphonon Processes as the Origin of Reliability Issues.
In ECS Transactions (pp. 31–47), Honolulu, Austria. https://doi.org/10.1149/05807.0031ecst (reposiTUm)

25.   Gös, W., Toledano-Luque, M., Baumgartner, O., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
A Comprehensive Model for Correlated Drain and Gate Current Fluctuations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 46–47), Urbana-Champaign, IL, USA. (reposiTUm)

24.   Schanovsky, F., Baumgartner, O., Goes, W., Grasser, T. (2013).
A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650559 (reposiTUm)

23.   Grasser, T., Rott, K., Reisinger, H., Wagner, P., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B. (2013).
Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

22.   Schanovsky, F., Goes, W., Grasser, T. (2013).
Advanced Modeling of Charge Trapping at Oxide Defects.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650671 (reposiTUm)

21.   Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013).
Direct Tunneling and Gate Current Fluctuations.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm)

20.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B. (2013).
Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724637 (reposiTUm)

19.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B. (2013).
Recent Advances in Understanding Oxide Traps in pMOS Transistors.
In Proceedings of 2013 IWDTF (pp. 95–96), Tokyo, Japan. (reposiTUm)

18.   Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
Understanding Correlated Drain and Gate Current Fluctuations.
In Proceedings of the 20th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 51–56), Singapore. (reposiTUm)

17.   Schanovsky, F., Grasser, T. (2012).
On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

16.   Gös, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B. (2011).
Advanced Modeling of Oxide Defects for Random Telegraph Noise.
In Proceedings of the 21st International Conference on Noise and Fluctuations (p. 4), Salamanca, Spanien, Austria. (reposiTUm)

15.   Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
In GADEST 2011: Abstract Booklet (p. 153), Loipersdorf, Austria, Austria. (reposiTUm)

14.   Schanovsky, F., Baumgartner, O., Grasser, T. (2011).
Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035038 (reposiTUm)

13.   Ceric, H., de Orio, R., Schanovsky, F., Zisser, W., Selberherr, S. (2011).
Multilevel Simulation for the Investigation of Fast Diffusivity Paths.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035068 (reposiTUm)

12.   Schanovsky, F., Grasser, T. (2011).
On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 17–21), California. (reposiTUm)

11.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677989 (reposiTUm)

10.   Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010).
Charge Trapping and the Negative Bias Temperature Instability.
In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm)

9.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Hole Capture Into Oxide Defects in MOS Structures From First Principles.
In Abstract Book (p. 435), Berlin. (reposiTUm)

8.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Mulit-Phonon Hole-Trapping From First-Principles.
In Book of Abstracts (p. 54), Catania. (reposiTUm)

7.   Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010).
Recent Advances in Understanding the Bias Temperature Instability.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm)

6.   Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 16–25), Phoenix. (reposiTUm)

5.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films.
In ECS Transactions (pp. 389–396), Ouro Preto. (reposiTUm)

4.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance.
In 215th ECS Meeting (pp. 15–26), San Francisco. (reposiTUm)

3.   Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D. (2009).
The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091158 (reposiTUm)

2.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290252 (reposiTUm)

1.   Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., Selberherr, S. (2009).
Valley Splitting in Thin Silicon Films From a Two-Band K·p Model.
In Proceedings of the 10th International Conference on Ultimate Integration of Silicon (pp. 277–280), Bologna, Austria. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

2.   Schanovsky, F., Grasser, T. (2012).
Bias Temperature Instabilities in Highly-Scaled MOSFETs.
2012 CMOS Emerging Technologies, Vancouver, BC Canada, Non-EU. (reposiTUm)

1.   Grasser, T., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., Kaczer, B. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

Doctor's Theses (authored and supervised)

Diploma and Master Theses (authored and supervised)

1.   Schanovsky, F. (2008).
Dispersive Transport Modeling Within the Multiple Trapping Framework
 Technische Universität Wien. (reposiTUm)

Scientific Reports

1.   Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007).
3 Year Report 2005-2007.
(reposiTUm)