Staff Person Publications

Publications Ivan Starkov

45 records

Publications in Scientific Journals

14.		A. S. Starkov, O. V. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Ferroelectrics, 442 (2013), 1; 10 - 17. https://doi.org/10.1080/00150193.2013.773854

13.		A. S. Starkov, I. Starkov: "Domain Wall Motion for Slowly Varying Electric Field"; Ferroelectrics, 442 (2013), 1; 1 - 9. https://doi.org/10.1080/00150193.2013.773852

12.		I. Starkov, H. Enichlmair: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs"; Journal of Vacuum Science & Technology B, 31 (2013), 1; 01A118-1 - 01A118-7. https://doi.org/10.1116/1.4774106

11.		A. S. Starkov, O. V. Pakhomov, I. Starkov: "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them"; Journal of Experimental and Theoretical Physics, 116 (2013), 6; 987 - 994. https://doi.org/10.1134/S1063776113060149

10.		A. Starkov, O. Pakhomov, I. Starkov: "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions"; Ferroelectrics, 427 (2012), 1; 78 - 83. https://doi.org/10.1080/00150193.2012.674413

9.		A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler: New Opportunities"; Ferroelectrics, 430 (2012), 1; 108 - 114. https://doi.org/10.1080/00150193.2012.677730

8.		I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179 (2011), 267 - 272. https://doi.org/10.4028/www.scientific.net/SSP.178-179.267

7.		S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51 (2011), 1525 - 1529. https://doi.org/10.1016/j.microrel.2011.07.089

6.		I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29 (2011), 01AB09-1 - 01AB09-8. https://doi.org/10.1116/1.3534021

5.		A. S. Starkov, O. V. Pakhomov, I. Starkov: "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field"; Technical Physics Letters, 79 (2011), 12; 1139 - 1141. https://doi.org/10.1134/S1063785011120133

4.		A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov: "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics"; Journal of Vacuum Science & Technology B, 29 (2011), 01A501-1 - 01A501-5. https://doi.org/10.1116/1.3532944

3.		A. S. Starkov, O. V. Pakhomov, I. Starkov: "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model"; JETP Letters, 91 (2010), 10; 507 - 511.

2.		S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50 (2010), 1267 - 1272. https://doi.org/10.1016/j.microrel.2010.0

1.		S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49 (2009), 998 - 1002. https://doi.org/10.1016/j.microrel.2009.06.018

Contributions to Books

2.		A. Starkov, O. Pakhomov, I. Starkov, A. Zaitsev, I. Baranov: "Principles of Solid-State Cooler on Layered Multiferroics"; in: "5th International Conference on Magnetic Refrigeration at Room Temperature", C. V. Muller (ed.); Institut International Du Froid, 2012, ISBN: 978-2-91314-994-6, 573 - 581.

1.		S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Models"; in: "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed.); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352. https://doi.org/10.1149/1.3572292

Talks and Poster Presentations (with Proceedings-Entry)

26.		A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov: "A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 77.

25.		A. Starkov, O. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in: "Abstract Book", (2012), 238.

24.		I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 pages.

23.		I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 6. https://doi.org/10.1109/IPFA.2012.6306266

22.		A. Starkov, I. Starkov: "Domain-Wall Motion for Slowly Varying Electric Field"; Talk: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in: "Abstract Book", (2012), 93.

21.		S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 5. https://doi.org/10.1109/IPFA.2012.6306265

20.		I. Starkov, H. Enichlmair, T. Grasser: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 40.

19.		A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev: "Principles of Solid-State Cooler on Layered Multiferroics"; Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 2012-09-17 - 2012-09-20; in: "Conference guide & book of abstracts", (2012), 1 pages.

18.		A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy: "The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures"; Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 pages. https://doi.org/10.1109/ISAF.2012.6297838

17.		A. Starkov, I. Starkov: "Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall"; Talk: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 pages. https://doi.org/10.1109/ISAF.2012.6297837

16.		A. Starkov, O. Pakhomov, I. Starkov: "Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 76.

15.		I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in: "GADEST 2011: Abstract Booklet", (2011), 105 - 106.

14.		S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), 1525 - 1529.

13.		I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages.

12.		I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 pages. https://doi.org/10.1109/PRIME.2011.5966251

11.		I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 127 - 130. https://doi.org/10.1109/SISPAD.2011.6035066

10.		I. Starkov, H. Ceric: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91.

9.		S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154.

8.		S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Modeling"; Talk: 219^th ECS Meeting, Montreal, Canada (invited); 2011-05-01 - 2011-05-06; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 pages.

7.		S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 123 - 126. https://doi.org/10.1109/SISPAD.2011.6035065

6.		I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 139 - 144.

5.		A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko: "Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors"; Poster: 16^th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 2010-06-28 - 2010-06-30; in: "Book of Abstracts WoDiM 2010", (2010), 93.

4.		I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 128.

3.		S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 341 - 345.

2.		S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in: "Proceedings of the 21^st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 pages.

1.		I. Starkov, S. E. Tyaginov, T. Grasser: "Green´s Function Asymptotic in Two-Layered Periodic Medium"; Talk: 17^th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112.

Talks and Poster Presentations (without Proceedings-Entry)

2.		A. Starkov, O. Pakhomov, I. Starkov: "Physical Model for Ferroelectrics Based on Pyrocurrent Consideration"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 2011-06-26 - 2011-07-01.

1.		A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler - New Opportunities"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 2011-06-26 - 2011-07-01.

Doctor's Theses (authored and supervised)

1.		I. Starkov: "Comprehensive Physical Modeling of Hot-Carrier Induced Degradation"; Supervisor, Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013; oral examination: 2013-01-14.