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Publications Roberta Stradiotto

6 records

Publications in Scientific Journals

2.  R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
"Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
IEEE Transactions on Electron Devices, 64 (2017), 3; 1045 - 1052. https://doi.org/10.1109/TED.2017.2655367

1.  R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces";
Solid-State Electronics, 125 (2016), 142 - 153. https://doi.org/10.1016/j.sse.2016.07.017

Talks and Poster Presentations (with Proceedings-Entry)

1.  R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; 218 - 225. https://doi.org/10.1109/ESSDERC.2015.7324754

Talks and Poster Presentations (without Proceedings-Entry)

1.  M. Capriotti, P. Lagger, C. Fleury, R. Stradiotto, M. Oposich, C. Ostermaier, G. Strasser, D. Pogany:
"Effect of III-N Barrier Resistance on CV Characteristics in GaN-based MOSHEMTs in Spill-Over Regime";
Poster: International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw; 2014-08-24 - 2014-08-29.

Doctor's Theses (authored and supervised)

1.  R. Stradiotto:
"Characterization of Electrically Active Defects at III-N/Dielectric Interfaces";
Supervisor, Reviewer: T. Grasser, G. Meneghesso; Institut für Mikroelektronik, 2016; oral examination: 2016-12-16. https://doi.org/10.34726/hss.2016.41581

Diploma and Master Theses (authored and supervised)

1.  C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany:
"Review of bias-temperature instabilities at the III-N/dielectric interface";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28.