Publications Bianka Ullmann
12 recordsBooks and Editorships
2. | Ullmann, B., Artner, G., Hahn, I., Hans, P., Krebs, H., Eder-Neuhauser, P., Zemann, R. (Eds.). (2016). Proceedings VSS 2016 - Vienna Young Scientists Symposium. Book of Abstracts, Dipl.Ing. Heinz A. Krebs. (reposiTUm) | |
1. | Zemann, R., Grill, A., Hahn, I., Krebs, H., Mayr, A., Eder-Neuhauser, P., Ullmann, B. (Eds.). (2015). Proceedings VSS 2015 - Vienna Young Scientists Symposium. Book of Abstracts, Dipl.Ing. Heinz A. Krebs. (reposiTUm) | |
Publications in Scientific Journals
4. | Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., Grasser, T. (2019). Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques. IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 (reposiTUm) | |
3. | Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental. IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm) | |
2. | Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory. IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm) | |
1. | Ullmann, B., Grasser, T. (2017). Transformation: Nanotechnology—challenges in Transistor Design and Future Technologies. Elektrotechnik Und Informationstechnik : E, i, 134(7), 349–354. https://doi.org/10.1007/s00502-017-0534-y (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
2. | Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017). The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects. In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm) | |
1. | Ullmann, B., Waltl, M., Grasser, T. (2015). Characterization of the Permanent Component of MOSFET Degradation Mechanisms. In Proceedings of the 2015 Vienna Young Scient Symposium (pp. 36–37), Wien, Austria. (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
3. | Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik. European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm) | |
2. | Winkler, G., Schreitl, M., Ullmann, B., Schlichtner, W., Steinhauser, G., Kazakov, G., Schumm, T. (2013). Towards a Nuclear Clock With 229Thorium. CoQus summer school 2013, Vienna, Austria. (reposiTUm) | |
1. | Schreitl, M., Winkler, G., Ullmann, B., Schlichtner, W., Steinhauser, G., Kazakov, G., Schumm, T. (2012). Towards a Nuclear Clock With 229Thorium. QCMC 2012, Vienna, Austria, Austria. (reposiTUm) | |
Doctor's Theses (authored and supervised)
1. | Ullmann, B. (2018). Mixed Negative Bias Temperature Instability and Hot-Carrier Stress Technische Universität Wien. https://doi.org/10.34726/hss.2018.57328 (reposiTUm) | |